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Results for “Ga2O3”

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NASA NTRS1984

Glass formation and properties in the gallia-calcia system

The critical cooling rate for glass formation was measured for five compositions in the Ga2O3-CaO system and varied from a low of (315 + or - 85) C/s for a eutectic melt containing 37.5 mol pct Ga2O3 to a high of (840 + or - 60) C/s for a melt containing 52 mol pct Ga2O3. The density and refractive index both increased with increasing Ga2O3 content, but the crystallization temperature and microhardness varied only slightly. The IR spectra of these glasses suggest that both GaO4 tetrahedra and GaO6 octahedra are present.

Whichard, G.↗

NASA NTRS2016

Low Temperature Flux Growth of 2H-SiC and Beta-Gallium Oxide

We present brief overview of our study on the low temperature flux growth of two very important novel wide bandgap materials 2H-SiC and Beta-gallium oxide (Beta-Ga2O3). We have synthesized and grown 5 millimeter to 1 centimeter size single crystals of Beta-gallium oxide (Beta-Ga2O3). We used a flux and semi wet method to grow transparent good quality crystals. In the semi-wet method Ga2O3 was synthesized with starting gallium nitrate solution and urea as a nucleation agent. In the flux method we used tin and other metallic flux. This crystal was placed in an alumina crucible and temperature was raised above 1050 degrees Centigrade. After a time period of thirty hours, we observed prismatic and needle shaped crystals of gallium oxide. Scanning electron microscopic studies showed step growth morphology. Crystal was polished to measure the properties. Bandgap was measured 4.7electronvolts using the optical absorption curve. Another wide bandgap hexagonal 2H-SiC was grown by using Si-Al eutectic flux in the graphite crucible. We used slight AlN also as the impurity in the flux. The temperature was raised up to 1050 degrees Centigrade and slowly cooled to 850 degrees Centigrade. Preliminary characterization results of this material are also reported.

Singh, N. B.↗

NASA NTRS1992

Oxygen-induced Al surface segregation in Al(x)Ga(1-x)As and the effect of Y overlayers on the oxidation of the Y/Al(x)Ga(1-x)As interface

The oxidation of Al(x)Ga(1-x)As (x = 0.15, AlGaAs) was studied by AES and XPS at 350 C and different oxygen exposures (up to 5 x 10 exp 4 L). Also studied were the effects of yttrium overlayers (theta = 3 ML) on the oxidation of the AlGaAs surface. Substantial oxygen-induced Al surface segregation has been observed for both yttriated and nonyttriated AlGaAs surfaces which increased with increasing oxygen exposure. Also observed is a significant Y-enhanced oxidation of the AlGaAs surface. Oxidation of the yttriated AlGaAs surface was found to be a factor of 4 greater than that of the nonyttriated surface. Also, while oxidation of the nonyttriated AlGaAs yielded mainly Al2O(x) (x less than 3) and only little Ga2O3, the yttriated AlGaAs surface oxide layer was principally Ga2O3 and stoichiometric Al2O3. However, both the yttriated and nonyttriated surfaces were found to contain metallic As within the oxide layer.

Mesarwi, A.↗

NASA NTRS1980

Chemical depth profiles of the GaAs/native oxide interface

The final-state oxidation products and their distribution in thin native oxides (30-40 A) on GaAs have been studied using X-ray photoelectron spectroscopy in conjunction with chemical depth profiling. Extended room-temperature-oxidation conditions have been chosen to allow the native oxide to attain its equilibrium composition and structure. The work emphasizes the use of chemical depth-profiling methods which make it possible to examine the variation in chemical reactivity of the oxide structure. A minimum of two distinct regions of Ga2O3 with differing chemical reactivity is observed. Chemical shift data indicate the presence of As2O3 in the oxide together with an elemental As overlayer at the interface. A change in relative charge transfer between oxygen and both arsenic and gallium-oxide species is observed in the region of the interface.

Grunthaner, P. J.↗

NASA NTRS1983

X-ray photoelectron spectroscopic study of the oxide removal mechanism of GaAs /100/ molecular beam epitaxial substrates in in situ heating

A standard cleaning procedure for GaAs (100) molecular beam epitaxial (MBE) substrates is a chemical treatment with a solution of H2SO4/H2O2/H2O, followed by in situ heating prior to MBE growth. X-ray photoelectron spectroscopic (XPS) studies of the surface following the chemical treatment show that the oxidized As is primarily As(+ 5). Upon heating to low temperatures (less than (350 C) the As(+ 5) oxidizes the substrate to form Ga2O3 and elemental As, and the As(+ 5) is reduced to As(+ 3) in the process. At higher temperatures (500 C), the As(+ 3) and elemental As desorb, while the Ga(+ 3) begins desorbing at about 600 C.

Vasquez, R. P.↗

NASA NTRS1983

Description of the containerless melting of glass in low gravity

A brief description is given of a single-axis, acoustic levitator/furnace apparatus used to position, heat, melt, and quench multicomponent oxide, glass-forming compositions in low gravity. This apparatus is capable of processing eight approximately spherical samples (about 6 mm diameter) at temperatures up to 1550 C in a dry air atmosphere. Results are also presented for a containerless melting experiment conducted on SPAR VI where a ternary CaO-Ga2O3-SiO2 composition was levitated and quenched to a glass. Selected properties of the glass prepared on SPAR VI are compared with the properties of glass samples of identical composition prepared on earth.

Ray, C. S.↗

NASA NTRS1984

Crystallization of calcia-gallia-silica glasses

A thermal image furance is presently used to study the critical cooling rate for glass formation, and the kinetics of crystallization, of the compositions 18.4CaO-(81.6-X)Ga2O3-XSiO2, where X = 3, 6, 9, and 13.8. Crystallization was studied nonisothermally, and the data were analyzed in light of the Avrami (1939) equation. Critical cooling rate and crystallization activation energy are both found to decrease with increasing silica content, and the results obtained by the present technique are noted to agree with those obtained on the basis of differential thermal analysis measurements.

Ray, C. S.↗

NASA NTRS1985

Effect of R(3+) ions on the structure and properties of lanthanum borate glasses

The present investigation of glass formation in the (mole percent) systems 25La2O3 (x)R2O3 (75-x)B2O3, where R = Al, Ga, and (25-x)La2O3 (x)Ln2O3 75B2O3, where Ln = Gd, Er, Y, notes that up to 25 mol pct Al2O3 or Ga2O3 can be substituted for B2O3, while no more than about 5 mol pct Ln2O3, substituted for La2O3, caused macro-phase separation. The substitution of either R2O3 or Ln2O3 in the lanthanum borate system changes the separation distance between adjacent B3O6 chains. The effect of this structural change on the molar volume, transformation temperature, thermal expansion coefficient, and transformation-range viscosity is discussed.

Chakraborty, I. N.↗

NASA NTRS2018

Design and Characteristics of Hydroxyapatites: Effect of Radiation

We have prepared silicate based hard materials and have processed it with organic flux. Because of the bioactivities of hydroxyapatites with tissues, this class of materials have attracted interest for bone applications. We have utilized low temperature processing techniques. Organic melt was used and the directional solidification method to cast the shaped sample. This organic treated material has different characteristics than coarsened oxide materials. Our approach involved low temperature processing using nano and micron sized powders of the material system Na2O-K2O-CaO- MgO-Ga2O3-SiO2, and titanates were processed by sintering and grain growth. Our results indicate that substitution of gallium and magnesium or titanium with some variation in processing methods have great potential to improve the glassy characteristics without decreasing the mechanical properties of bones. Effect of radiation on bone was studied by exposing with commercially available Cs137 gamma ray source. It was observed that electrical resistivity increased due to radiation exposure for this system.

Bhavsar, Jayati↗

NASA NTRS2018

Development of Large Bandgap Materials Using Reactive Growth in Al-SI Eutectic for Optical and RF Applications

Carbon was utilized as reactive element to modify the microstructure using forced mixing during crystallization of the Al-Si alloy by rotation and stirring. We nucleated the material on SiC substrates while the Al-Si melt was rotated with a speed of 30rpm in a graphite crucible. Several experiments were performed and parameters such as time of mixing, soaking temperature, rotation rate of the substrate and rate of cooling during the solidification was changed. We observed dendrite and cell morphologies during the solidification of rotating melt. The microstructure was characterized by optical microscopy and SEM-EDX and compositional spectroscopy. The effect of carbon impurities was studied on the solidifying microstructure. When we used the longer soak time of the melt in presence of carbon impurities we observed the destruction of dendritic morphology and the formation of cellular and colony structures. Similar approach has been used for Ga2O3, a novel large bandgap material also.

Singh, N. B.↗