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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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6 records
All sourcesNASA NTRSDOE OSTI
DOE OSTI2020

A self-healing liquid metal anode with PEO-Based polymer electrolytes for rechargeable lithium batteries

In this study, a Ga-Sn liquid metal alloy material is demonstrated as a self-healing anode system due to its fluidity via operando synchrotron-based transmission X-ray microscopy and X-ray diffraction experiments. Cracks formed due to volume expansions can be recovered by the fluidity of the liquid metals. By incorporating with a poly(ethylene oxide) (PEO)-based electrolyte at 60°C, the Ga-Sn anode shows a reversible lithium insertion and extraction process with a high initial discharge specific capacity of 682 mAh g -1 , followed by delivering a capacity of 462 mAh g -1 in the second cycle at C/20 rate. Furthermore, compared with its solid counterparts, the Ga-Sn liquid metal anode demonstrates a better capability to maintain its mechanical integrity and better contact with PEO solid electrolytes due to its advantageous features of the liquid. This study suggests a potential strategy to use liquid metal alloys with polymer solid electrolyte to solve the anode challenges in rechargeable lithium batteries.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Materials Data on GaSn3 by Materials Project

GaSn3 is alpha bismuth trifluoride structured and crystallizes in the cubic Fm-3m space group. The structure is three-dimensional. Ga is bonded in a body-centered cubic geometry to eight equivalent Sn atoms. All Ga–Sn bond lengths are 3.21 Å. There are two inequivalent Sn sites. In the first Sn site, Sn is bonded in a body-centered cubic geometry to four equivalent Ga and four equivalent Sn atoms. All Sn–Sn bond lengths are 3.21 Å. In the second Sn site, Sn is bonded in a body-centered cubic geometry to eight equivalent Sn atoms.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Materials Data on Ga3Sn by Materials Project

Ga3Sn is Uranium Silicide structured and crystallizes in the cubic Pm-3m space group. The structure is three-dimensional. Ga is bonded to eight equivalent Ga and four equivalent Sn atoms to form distorted GaGa8Sn4 cuboctahedra that share corners with twelve equivalent GaGa8Sn4 cuboctahedra, edges with eight equivalent SnGa12 cuboctahedra, edges with sixteen equivalent GaGa8Sn4 cuboctahedra, faces with four equivalent SnGa12 cuboctahedra, and faces with fourteen equivalent GaGa8Sn4 cuboctahedra. All Ga–Ga bond lengths are 3.12 Å. All Ga–Sn bond lengths are 3.12 Å. Sn is bonded to twelve equivalent Ga atoms to form SnGa12 cuboctahedra that share corners with twelve equivalent SnGa12 cuboctahedra, edges with twenty-four equivalent GaGa8Sn4 cuboctahedra, faces with six equivalent SnGa12 cuboctahedra, and faces with twelve equivalent GaGa8Sn4 cuboctahedra.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Materials Data on Ga3Sn by Materials Project

Ga3Sn is alpha bismuth trifluoride structured and crystallizes in the tetragonal I4/mmm space group. The structure is three-dimensional. there are two inequivalent Ga sites. In the first Ga site, Ga is bonded in a distorted body-centered cubic geometry to four equivalent Ga and four equivalent Sn atoms. All Ga–Ga bond lengths are 3.08 Å. All Ga–Sn bond lengths are 3.08 Å. In the second Ga site, Ga is bonded to eight equivalent Ga and four equivalent Sn atoms to form GaGa8Sn4 cuboctahedra that share corners with four equivalent GaGa8Sn4 cuboctahedra, corners with eight equivalent SnGa12 cuboctahedra, edges with eight equivalent GaGa8Sn4 cuboctahedra, faces with four equivalent GaGa8Sn4 cuboctahedra, and faces with six equivalent SnGa12 cuboctahedra. All Ga–Sn bond lengths are 3.29 Å. Sn is bonded to twelve Ga atoms to form distorted SnGa12 cuboctahedra that share corners with four equivalent SnGa12 cuboctahedra, corners with eight equivalent GaGa8Sn4 cuboctahedra, edges with eight equivalent SnGa12 cuboctahedra, faces with four equivalent SnGa12 cuboctahedra, and faces with six equivalent GaGa8Sn4 cuboctahedra.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Materials Data on Ga3Sn by Materials Project

Ga3Sn is alpha bismuth trifluoride structured and crystallizes in the cubic Fm-3m space group. The structure is three-dimensional. there are two inequivalent Ga sites. In the first Ga site, Ga is bonded in a body-centered cubic geometry to four equivalent Ga and four equivalent Sn atoms. All Ga–Ga bond lengths are 3.05 Å. All Ga–Sn bond lengths are 3.05 Å. In the second Ga site, Ga is bonded in a body-centered cubic geometry to eight equivalent Ga atoms. Sn is bonded in a body-centered cubic geometry to eight equivalent Ga atoms.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Materials Data on GaSn3 by Materials Project

GaSn3 is beta-derived structured and crystallizes in the hexagonal P6_3/mmc space group. The structure is three-dimensional. Ga is bonded to twelve equivalent Sn atoms to form GaSn12 cuboctahedra that share corners with six equivalent GaSn12 cuboctahedra, corners with twelve equivalent SnGa4Sn8 cuboctahedra, edges with eighteen equivalent SnGa4Sn8 cuboctahedra, faces with eight equivalent GaSn12 cuboctahedra, and faces with twelve equivalent SnGa4Sn8 cuboctahedra. There are six shorter (3.29 Å) and six longer (3.33 Å) Ga–Sn bond lengths. Sn is bonded to four equivalent Ga and eight equivalent Sn atoms to form SnGa4Sn8 cuboctahedra that share corners with four equivalent GaSn12 cuboctahedra, corners with fourteen equivalent SnGa4Sn8 cuboctahedra, edges with six equivalent GaSn12 cuboctahedra, edges with twelve equivalent SnGa4Sn8 cuboctahedra, faces with four equivalent GaSn12 cuboctahedra, and faces with sixteen equivalent SnGa4Sn8 cuboctahedra. There are a spread of Sn–Sn bond distances ranging from 3.24–3.37 Å.

36 MATERIALS SCIENCE↗