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Results for “Ga-In”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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5 records
All sourcesNASA NTRSDOE OSTI
NASA NTRS1985

Containerless Studies of Nucleation and Undercooling

The long term research goals are to perform experiments to determine the achievable limits of undercooling, the characteristics of heterogeneous nucleation, and the physical properties of significantly undercooled melts. The techniques used are based on the newly developed containerless manipulation methods afforded by acoustic levitation. Ground based investigations involved 0.1 to 2 mm specimens of pure metals and alloys (In, Ga, Sn, Ga-In, ...) as well as glass-forming organic compounds (O-Terphenyl). A currently operating ultrasonic high temperature apparatus has allowed the ground-based levitation of 1 to 2 mm samples of solid aluminum at 550 deg C in an argon atmosphere. Present work is concentrating on the undercooling of pure metal samples (In, Sn), and on the measurements of surface tension and viscosity of the undercooled melts via shape oscillation techniques monitored through optical detection methods. The sound velocity of undercooled O-Terphenyl is being measured in an immiscible liquid levitation cells.

Trinh, E. H.↗
NASA NTRS2012

Novel Amalgams for In-Space Parts Fabrication

Sound amalgams can be fabricated by substituting Ga-In liquid for mercury; Cu-coated steel fibers bond well with the amalgam components. Inclusion of steel fibers significantly improved mechanical properties. An application scenario utilizing amalgams for in-space parts fabrication and repair was suggested. Procedure and materials need to be optimized

Cochran, Calvin↗
DOE OSTI2020

Materials Data on InGa3 by Materials Project

InGa3 crystallizes in the hexagonal P6_3/mmc space group. The structure is three-dimensional. In is bonded to twelve Ga atoms to form a mixture of face and corner-sharing InGa12 cuboctahedra. There are six shorter (3.09 Å) and six longer (3.19 Å) In–Ga bond lengths. There are two inequivalent Ga sites. In the first Ga site, Ga is bonded in a 12-coordinate geometry to four equivalent In and eight Ga atoms. There are a spread of Ga–Ga bond distances ranging from 2.97–3.21 Å. In the second Ga site, Ga is bonded in a 12-coordinate geometry to four equivalent In and eight Ga atoms. Both Ga–Ga bond lengths are 3.12 Å.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Materials Data on In3Ga by Materials Project

In3Ga is alpha bismuth trifluoride structured and crystallizes in the tetragonal I4/mmm space group. The structure is three-dimensional. there are two inequivalent In sites. In the first In site, In is bonded to eight In and four equivalent Ga atoms to form InIn8Ga4 cuboctahedra that share corners with twelve equivalent InIn8Ga4 cuboctahedra, edges with eight equivalent GaIn12 cuboctahedra, edges with sixteen InIn8Ga4 cuboctahedra, faces with four equivalent GaIn12 cuboctahedra, and faces with fourteen InIn8Ga4 cuboctahedra. There are four shorter (3.26 Å) and four longer (3.37 Å) In–In bond lengths. All In–Ga bond lengths are 3.26 Å. In the second In site, In is bonded to eight equivalent In and four equivalent Ga atoms to form InIn8Ga4 cuboctahedra that share corners with four equivalent InIn8Ga4 cuboctahedra, corners with eight equivalent GaIn12 cuboctahedra, edges with twenty-four InIn8Ga4 cuboctahedra, faces with six equivalent GaIn12 cuboctahedra, and faces with twelve InIn8Ga4 cuboctahedra. All In–Ga bond lengths are 3.37 Å. Ga is bonded to twelve In atoms to form distorted GaIn12 cuboctahedra that share corners with four equivalent GaIn12 cuboctahedra, corners with eight equivalent InIn8Ga4 cuboctahedra, edges with eight equivalent GaIn12 cuboctahedra, edges with sixteen equivalent InIn8Ga4 cuboctahedra, faces with four equivalent GaIn12 cuboctahedra, and faces with fourteen InIn8Ga4 cuboctahedra.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Materials Data on InGa3 by Materials Project

InGa3 is Uranium Silicide structured and crystallizes in the cubic Pm-3m space group. The structure is three-dimensional. In is bonded to twelve equivalent Ga atoms to form InGa12 cuboctahedra that share corners with twelve equivalent InGa12 cuboctahedra, edges with twenty-four equivalent GaIn4Ga8 cuboctahedra, faces with six equivalent InGa12 cuboctahedra, and faces with twelve equivalent GaIn4Ga8 cuboctahedra. All In–Ga bond lengths are 3.10 Å. Ga is bonded to four equivalent In and eight equivalent Ga atoms to form GaIn4Ga8 cuboctahedra that share corners with twelve equivalent GaIn4Ga8 cuboctahedra, edges with eight equivalent InGa12 cuboctahedra, edges with sixteen equivalent GaIn4Ga8 cuboctahedra, faces with four equivalent InGa12 cuboctahedra, and faces with fourteen equivalent GaIn4Ga8 cuboctahedra. All Ga–Ga bond lengths are 3.10 Å.

36 MATERIALS SCIENCE↗