Engineering Papers⌕ Search

SEARCH · Engineering Papers

Results for “Ga-Hg-Se”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.

Materials Data on Ga2HgSe4 by Materials Project

HgGa2Se4 crystallizes in the tetragonal I-4 space group. The structure is three-dimensional. Hg2+ is bonded to four equivalent Se2- atoms to form HgSe4 tetrahedra that share corners with eight GaSe4 tetrahedra. All Hg–Se bond lengths are 2.71 Å. There are two inequivalent Ga3+ sites. In the first Ga3+ site, Ga3+ is bonded to four equivalent Se2- atoms to form GaSe4 tetrahedra that share corners with four equivalent HgSe4 tetrahedra and corners with four equivalent GaSe4 tetrahedra. All Ga–Se bond lengths are 2.46 Å. In the second Ga3+ site, Ga3+ is bonded to four equivalent Se2- atoms to form GaSe4 tetrahedra that share corners with four equivalent HgSe4 tetrahedra and corners with four equivalent GaSe4 tetrahedra. All Ga–Se bond lengths are 2.46 Å. Se2- is bonded in a trigonal non-coplanar geometry to one Hg2+ and two Ga3+ atoms.

36 MATERIALS SCIENCE↗

Materials Data on Ga2Hg5Se8 by Materials Project

Hg5Ga2Se8 crystallizes in the tetragonal I-4m2 space group. The structure is three-dimensional. there are two inequivalent Hg2+ sites. In the first Hg2+ site, Hg2+ is bonded to four equivalent Se2- atoms to form HgSe4 tetrahedra that share corners with four equivalent GaSe4 tetrahedra and corners with eight equivalent HgSe4 tetrahedra. All Hg–Se bond lengths are 2.71 Å. In the second Hg2+ site, Hg2+ is bonded to four Se2- atoms to form HgSe4 tetrahedra that share corners with four equivalent GaSe4 tetrahedra and corners with six HgSe4 tetrahedra. There are two shorter (2.67 Å) and two longer (2.77 Å) Hg–Se bond lengths. Ga3+ is bonded to four Se2- atoms to form GaSe4 tetrahedra that share corners with ten HgSe4 tetrahedra. There are two shorter (2.44 Å) and two longer (2.51 Å) Ga–Se bond lengths. There are two inequivalent Se2- sites. In the first Se2- site, Se2- is bonded in a distorted trigonal non-coplanar geometry to two equivalent Hg2+ and one Ga3+ atom. In the second Se2- site, Se2- is bonded to three Hg2+ and one Ga3+ atom to form corner-sharing SeGaHg3 tetrahedra.

36 MATERIALS SCIENCE↗

Materials Data on Ga2HgSe4 by Materials Project

HgGa2Se4 crystallizes in the tetragonal I-4m2 space group. The structure is three-dimensional. Hg2+ is bonded to six Se2- atoms to form HgSe6 octahedra that share corners with two equivalent GaSe6 octahedra, corners with four equivalent HgSe6 octahedra, and edges with eight GaSe6 octahedra. The corner-sharing octahedra tilt angles range from 0–10°. There are four shorter (2.80 Å) and two longer (2.99 Å) Hg–Se bond lengths. There are two inequivalent Ga3+ sites. In the first Ga3+ site, Ga3+ is bonded to six Se2- atoms to form GaSe6 octahedra that share corners with two equivalent HgSe6 octahedra, corners with four equivalent GaSe6 octahedra, edges with four equivalent HgSe6 octahedra, and edges with four equivalent GaSe6 octahedra. The corner-sharing octahedra tilt angles range from 0–10°. There are two shorter (2.45 Å) and four longer (2.80 Å) Ga–Se bond lengths. In the second Ga3+ site, Ga3+ is bonded to six Se2- atoms to form GaSe6 octahedra that share corners with four equivalent GaSe6 octahedra, edges with four equivalent HgSe6 octahedra, and edges with four equivalent GaSe6 octahedra. The corner-sharing octahedral tilt angles are 11°. There are two shorter (2.47 Å) and four longer (2.81 Å) Ga–Se bond lengths. There are two inequivalent Se2- sites. In the first Se2- site, Se2- is bonded to two equivalent Hg2+ and three Ga3+ atoms to form a mixture of corner and edge-sharing SeGa3Hg2 square pyramids. In the second Se2- site, Se2- is bonded in a distorted square co-planar geometry to one Hg2+ and three Ga3+ atoms.

36 MATERIALS SCIENCE↗