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At least 19 records

Spectrum of embrittling potencies and relation to properties of symmetric-tilt grain boundaries

Grain boundaries in metallic materials can exist in a wide range of stable and metastable structures. In addition, the properties of a grain boundary may be altered through solute segregation. In this work, we present a formulation that combines the spectrum of embrittling potencies associated with solute segregation with site-occupancy statistics. As a prototype problem, we illustrate the relation between segregation and embrittlement in the case of S segregation to grain boundaries in Ni. To obtain a population of site segregation energies, we perform molecular statics calculations on 378 different symmetric-tilt grain boundaries and their free surface equivalents, using an embedded-atom method interatomic potential developed specifically for studying embrittlement. Our results show that it is important to consider both the energies associated with embrittlement and the probability of occupancy to describe the general embrittling nature of a grain boundary. When analyzed in isolation, certain grain boundaries show large embrittling potencies; however, that effect is diminished when the probability of S segregation to that grain boundary is considered within a polycrystal. We propose a new quantity, the embrittling estimator, which not only categorizes grain boundaries as embrittling or strengthening, but also considers site occupancy probabilities, so that the embrittlement behavior of grain boundaries within a network of grain boundaries can be compared. Finally, we examine the relationship between embrittlement behavior and innate grain boundary properties, such as the free volume, and find statistical evidence that the complex nature of embrittlement cannot be explained by linear correlations with excess volumes or energies. Ultimately, this combined approach provides a theoretical tool to assist grain boundary engineering of metastable alloys.

36 MATERIALS SCIENCE↗

Irradiation-induced grain growth and defect evolution in nanocrystalline zirconia with doped grain boundaries

Grain boundaries are effective sinks for radiation-induced defects, ultimately impacting the radiation tolerance of nanocrystalline materials (dense materials with nanosized grains) against net defect accumulation. However, irradiation-induced grain growth leads to grain boundary area decrease, shortening potential benefits of nanostructures. A possible approach to mitigate this is the introduction of dopants to target a decrease in grain boundary mobility or a reduction in grain boundary energy to eliminate driving forces for grain growth (using similar strategies as to control thermal growth). Here, in this study, we tested this concept in nanocrystalline zirconia doped with lanthanum. Although the dopant is observed to segregate to the grain boundaries, causing grain boundary energy decrease and promoting dragging forces for thermally activated boundary movement, irradiation induced grain growth could not be avoided under heavy ion irradiation, suggesting a different growth mechanism as compared to thermal growth. Furthermore, it is apparent that reducing the grain boundary energy reduced the effectiveness of the grain boundary as sinks, and the number of defects in the doped material is higher than in undoped (La-free) YSZ.

36 MATERIALS SCIENCE↗

The Role of Grain Boundary Energy on Grain Boundary Complexion Transitions

Grain boundary complexions are distinct equilibrium structures and compositions of a grain boundary and complexion transformations are transition from a metastable to an equilibrium complexion at a specific thermodynamic and geometric conditions. Previous work indicates that, in the case of doped alumina, a complexion transition that increased the mobility of transformed boundaries and resulted in abnormal grain growth also caused a decrease in the mean relative grain boundary energy as well as an increase in the anisotropy of the grain boundary character distribution (GBCD). The current work will investigate the hypothesis that the rates of complexion transitions that result in abnormal grain growth (AGG) depend on grain boundary character and energy. Furthermore, the current work expands upon this understanding and tests the hypothesis that it is possible to control when and where a complexion transition occurs by controlling the local grain boundary energy distribution.

36 MATERIALS SCIENCE↗

Energetics of the nucleation and glide of disconnection modes in symmetric tilt grain boundaries

Grain boundaries (GBs) evolve by the nucleation and glide of disconnections, which are dislocations with a step character. In this work, motivated by recent success in predicting GB properties such as the shear coupling factor and mobility from the intrinsic properties of disconnections, we develop a systematic method to calculate the energy barriers for the nucleation and glide of individual disconnection modes under arbitrary driving forces and a quasi-2D setting. This method combines tools from bicrystallography to enumerate disconnection modes and the Nudged elastic band (NEB) method to calculate their energetics, yielding minimum energy paths and atomistic mechanisms for the nucleation and glide of each disconnection mode. We apply the method to accurately predict shear coupling factors of $[001]$ symmetric tilt grain boundaries in Cu. Particular attention is paid to the boundaries where the dislocation-based disconnection nucleation model produces incorrect nucleation barriers. We demonstrate that the method can accurately compute energy barriers and predict shear-coupling factors in the low-temperature regime. For certain disconnection modes in which the assumptions underlying our method do not hold, we report upper bounds on the energy barriers for disconnection nucleation and glide. In addition, the NEB trajectories reveal interesting phenomena such as the dissociation of a higher energy mode into lower energy modes, and in some cases, shear coupling being mediated by partial disconnections, wherein the GB structure temporarily changes to a metastable state before reverting back to its original structure. Graphical abstract

36 MATERIALS SCIENCE↗

Equation of Motion for a Grain Boundary

Grain boundary (GB) migration controls many forms of microstructural evolution in polycrystalline materials. Recent theory, simulations, and experiments demonstrate that GB migration is controlled by the motion of discrete line defects or disconnections. We present a continuum equation of motion for grain boundary derived from the underlying discrete disconnection mechanism. We also present an equation of motion for the junctions where multiple grain boundaries meet—as is always the case in a polycrystal. The resulting equation of motion naturally exhibits junction drag—a widely observed phenomena in junction dynamics in solids and liquids.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Decoupling Grain-Boundary, Grain-Interior, and Surface Recombination with Cathodoluminescence

In this work, we combine quantitative cathodoluminescence (CL) with time-resolved photoluminescence (TRPL) and numerical simulations to determine grain-boundary, grain-interior, and surface recombination parameters in standard CdTe thin films. CL intensities from thousands of grains are analyzed to accumulate statistics and chart variations with grain size. Grain-boundary contrast results for small grains indicate that the grain-boundary recombination velocity, S GB , decreases significantly with CdCl 2 treatment, but S GB is increased by subsequent Cu-diffusion. Furthermore, within a given sample, data suggests that S GB is nearly independent of grain size. The back-surface recombination velocity, S, is extracted from TRPL measurements incident on the back surface, and CL profiles are simulated to determine the grain-interior lifetime, t GI . Finally, CL intensity vs. grain size relationships are simulated to check for self-consistency of the S GB , S, and t GI values.

14 SOLAR ENERGY↗

Effect of the pre-existing carbides on the grain boundary network during grain boundary engineering in a nickel based alloy

Grain boundary engineering was carried out on an aging-treated nickel based Alloy 690, which has precipitated carbides at grain boundaries. Electron backscatter diffraction technique was used to investigate the grain boundary networks. Results show that, compared with the solution-annealed samples, the aging-treated samples with pre-existing carbides at grain boundaries need longer duration or higher temperature during annealing after low-strain tensile deformation for forming high proportion of low-Σ coincidence site lattice grain boundaries (more than 75%). The reason is that the primary recrystallization is inhibited or retarded owing to that the pre-existing carbides are barriers to grain boundaries migration. - Highlights: • Study of GBE as function of pre-existing GB carbides, tensile strain and annealing • Recrystallization of GBE is inhibited or retarded by the pre-existing carbides. • Retained carbides after annealing show the original GB positions. • More than 80% of special GBs were formed after the modification of GBE processing. • Multiple twinning during recrystallization is the key process of GBE.

36 MATERIALS SCIENCE↗

Progression of creep deformation from grain boundaries to grain interior in Al-Cu-Mn-Zr alloys

Creep mechanisms are studied in θ'-Al 2 Cu-strengthened Al-Cu-Mn-Zr alloys at 300 and 350°C for (i) ACMZ, a base alloy without further alloying elements and (ii) RR350, a commercial alloy with additions of Ni and Co forming distinct grain-boundary precipitates. At high stresses, creep is dominated by dislocations bypassing θ' precipitates within grains via the Orowan mechanism, as evidenced by (i) very high stress exponent (n~20-25) and (ii) α-Al and θ' lattice strains (measured via in-situ neutron diffraction) evolving during creep in a manner consistent with load transfer from the plastically-deforming α-Al matrix to elastically-deforming θ' precipitates. At intermediate stresses, both alloys exhibit a n~3 regime, where α-Al and θ' lattice strains scale near-linearly with applied stress while remaining largely unaffected by strain accumulation, indicating that Orowan looping or dislocation pile-up around θ' is now inactive within the grains. Rather, dislocation motion occurs solely in θ'-precipitate-free zones (θ'-PFZ) where high dislocation densities are observed via TEM after creep deformation. Plastic flow at θ'-PFZ and/or localized pipe diffusion are expected to enable grain-boundary sliding (GBS), which is proposed as the rate-limiting mechanism in the n~3 regime. Ni/Co-rich precipitates at RR350 grain-boundaries, with negligible θ'-PFZ around them, share load (as determined via neutron diffraction) with the α-Al matrix more effectively than θ-Al 2 Cu precipitates at ACMZ grain-boundaries, with wide surrounding θ'-PFZ. So, high creep resistance in the n~3 GBS regime of RR350 is enabled by coarsening-resistant grain-boundary precipitates, forming without concomitant development of weak θ'-PFZ, which effectively share load with the grains.

36 MATERIALS SCIENCE↗

Tuning electronic and magnetic properties of armchair|zigzag hybrid graphene nanoribbons by the choice of supercell model of grain boundaries

Grain boundaries (GBs) attract much interest for its ability to tune the property of hybrid materials. Theoretically predicting the properties of hybrid graphene with GBs, even a linear GB remains challenging due to its inhomogeneous structure, which makes supercell model tough to choose in theoretic studies. For the first time, the applicability of supercells with different GBs and lattice-mismatches for describing armchair-zigzag hybrid graphene nanoribbons was validated by ab initio molecular dynamic simulations and first principles electronic structure calculations. And to what extent the electronic properties can be tuned by the strain effects resulting from the lattice-mismatch and the GBs distortion in supercells was demonstrated. This work showed that the intrinsic strain in such system plays a decisive role in determining the band structure and spin polarization properties. Hybrid graphene nanoribbon was found to be ferromagnetic in the ground state, especially for the case of using the supercell with nearly-perfect lattice match. Its high Curie temperature suggests the potential applications of this material in spintronics.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Boundary conditions at grain boundaries

Grain boundaries in polycrystalline semiconductor material are frequently idealized as surfaces possessing a characteristic surface recombination velocity. Minority carrier densities generated by external sources (electron beams, light, etc.) in polycrystalline p-n junctions must satisfy certain boundary conditions at these grain boundaries which will be derived. It will also be shown that a 'folding technique' introduced recently to deal with this problem is of limited value.

Von Roos, O.↗

Luminescence methodology to determine grain-boundary, grain-interior, and surface recombination in thin-film solar cells

We determine the grain-boundary (GB) recombination velocity, S GB , and grain-interior (GI) lifetime, t GI , parameters in superstrate CdS/CdTe thin-film solar cell technology by combining cathodoluminescence (CL) spectrum imaging and time-resolved photoluminescence (TRPL) measurements. We consider critical device formation stages, including after CdTe deposition, CdCl 2 treatment, and Cu diffusion. CL image analysis methods extract GB and GI intensities and grain size for hundreds of grains per sample. Concurrently, a three-dimensional CL model is developed to simulate the GI intensity as a function of t GI , S GB , grain size, and the surface recombination velocity, S surf . TRPL measurements provide an estimate of S surf for the CL model. A fit of GI intensity vs. grain size data with the CL model gives a self-consistent and representative set of S GB and t GI values for the samples: S GB (t GI ) = 2.6 x 10 6 cm/s (68-250 ps), S GB (t GI ) = 4.1 x 10 5 cm/s (1.5-3.3 ns), and S GB (t GI ) = 5.5 x 10 5 cm/s (1.0-3.8 ns) for as-deposited, CdCl 2 -treated, and CdCl 2- A nd Cu-treated samples, respectively. Thus, we find that the CdCl2 treatment both helps to passivate GBs and significantly increase the GI lifetime. Subsequent Cu diffusion increases GB recombination slightly and has nuanced effects on the GI lifetime. Finally, as a partial check on the S GB and t GI values, they are input to a Sentaurus device model, and the simulated performance is compared to the measured performance. The methodology developed here can be applied broadly to CdTe and CdSeTe thin-film technology and to other thin-film solar cell materials including Cu(In 1-x Ga x )Se 2 , Cu 2 ZnSnS 4 , and perovskites.

14 SOLAR ENERGY↗

Grain boundary phases in bcc metals

We report a computational discovery of novel grain boundary structures and multiple grain boundary phases in elemental body-centered cubic (bcc) metals represented by tungsten, tantalum and molybdenum. While grain boundary structures created by the γ-surface method as a union of two perfect half crystals have been studied extensively, it is known that the method has limitations and does not always predict the correct ground states. Here, we use a newly developed computational tool, based on evolutionary algorithms, to perform a grand-canonical search of a high-angle symmetric tilt and twist boundaries in tungsten, and we find new ground states and multiple phases that cannot be described using the conventional structural unit model. We use molecular dynamics (MD) simulations to demonstrate that the new structures can coexist at finite temperature in a closed system, confirming these are examples of different grain boundary phases. The new ground state is confirmed by first-principles calculations.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Multiscale model of metal alloy oxidation at grain boundaries

High temperature intergranular oxidation and corrosion of metal alloys is one of the primary causes of materials degradation in nuclear systems. In order to gain insights into grain boundary oxidation processes, a mesoscale metal alloy oxidation model is established by combining quantum Density Functional Theory (DFT) and mesoscopic Poisson-Nernst-Planck/classical DFT with predictions focused on Ni alloyed with either Cr or Al. Analysis of species and fluxes at steady-state conditions indicates that the oxidation process involves vacancy-mediated transport of Ni and the minor alloying element to the oxidation front and the formation of stable metal oxides. The simulations further demonstrate that the mechanism of oxidation for Ni-5Cr and Ni-4Al is qualitatively different. Intergranular oxidation of Ni-5Cr involves the selective oxidation of the minor element and not matrix Ni, due to slower diffusion of Ni relative to Cr in the alloy and due to the significantly smaller energy gain upon the formation of nickel oxide compared to that of Cr{sub 2}O{sub 3}. This essentially one-component oxidation process results in continuous oxide formation and a monotonic Cr vacancy distribution ahead of the oxidation front, peaking at alloy/oxide interface. In contrast, Ni and Al are both oxidized in Ni-4Al forming a mixed spinel NiAl{sub 2}O{sub 4}. Different diffusivities of Ni and Al give rise to a complex elemental distribution in the vicinity of the oxidation front. Slower diffusing Ni accumulates in the oxide and metal within 3 nm of the interface, while Al penetrates deeper into the oxide phase. Ni and Al are both depleted from the region 3–10 nm ahead of the oxidation front creating voids. The oxide microstructure is also different. Cr{sub 2}O{sub 3} has a plate-like structure with 1.2–1.7 nm wide pores running along the grain boundary, while NiAl{sub 2}O{sub 4} has 1.5 nm wide pores in the direction parallel to the grain boundary and 0.6 nm pores in the perpendicular direction providing an additional pathway for oxygen diffusion through the oxide. The proposed theoretical methodology provides a framework for modeling metal alloy oxidation processes from first principles and on the experimentally relevant length scales.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Physics of grain boundaries in polycrystalline photovoltaic semiconductors

Thin-film solar cells based on polycrystalline Cu(In,Ga)Se{sub 2} (CIGS) and CdTe photovoltaic semiconductors have reached remarkable laboratory efficiencies. It is surprising that these thin-film polycrystalline solar cells can reach such high efficiencies despite containing a high density of grain boundaries (GBs), which would seem likely to be nonradiative recombination centers for photo-generated carriers. In this paper, we review our atomistic theoretical understanding of the physics of grain boundaries in CIGS and CdTe absorbers. We show that intrinsic GBs with dislocation cores exhibit deep gap states in both CIGS and CdTe. However, in each solar cell device, the GBs can be chemically modified to improve their photovoltaic properties. In CIGS cells, GBs are found to be Cu-rich and contain O impurities. Density-functional theory calculations reveal that such chemical changes within GBs can remove most of the unwanted gap states. In CdTe cells, GBs are found to contain a high concentration of Cl atoms. Cl atoms donate electrons, creating n-type GBs between p-type CdTe grains, forming local p-n-p junctions along GBs. This leads to enhanced current collections. Therefore, chemical modification of GBs allows for high efficiency polycrystalline CIGS and CdTe thin-film solar cells.

36 MATERIALS SCIENCE↗

The Influence of Grain Boundary Type upon Damage Evolution at Grain Boundary Interfaces

In a prior work, it was found that grain boundary structure strongly influences damage evolution at grain boundaries in copper samples subjected to either shock compression or incipient spall. Here, several grain boundaries with different grain boundary structures, including a {Sigma}3 (10-1) boundary, are interrogated via conventional transmission electron microscopy (TEM) and high-resolution transmission electron microscopy (HRTEM) to investigate the effects of atomic-scale structural differences on grain boundary strength and mobility. Boundaries are studied both before and after shock compression at a peak shock stress of 10 GPa. Results of the TEM and HRTEM work are used in conjunction with MD modeling to propose a model for shock-induced damage evolution at grain boundary interfaces that is dependent upon coincidence.

36 MATERIALS SCIENCE↗