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All sourcesNASA NTRSDOE OSTI
DOE OSTI2013

Nuclear Data Sheets for A = 75

The experimental nuclear spectroscopic data for known nuclides of mass number 75 (Fe, Co, Ni, Cu, Zn, Ga, Ge, As, Se, Br, Kr, Rb, Sr) have been evaluated and presented together with Adopted properties for levels and γ rays. New high-spin data are available for {sup 75}Ga, and {sup 75}Rb; and lifetime data for high-spin states in {sup 75}Br and {sup 75}Kr. For ΔJ =1, M1+E2 transitions in two rotational bands in {sup 75}Kr, several B(E2)(W.u.) values are anomalously high, deviating by 2–3 σ values from currently accepted RUL(E2) = 300. In the opinion of the evaluators, there is need to remeasure level lifetimes and multipole mixing ratios in {sup 75}Kr to resolve this serious discrepancy. New precise single-particle transfer cross section data are available for {sup 75}Ga, {sup 75}Ge, {sup 75}As and {sup 75}Se from several different reactions (2009Ka06,2008Sc03); these data give information for occupancy of valence neutron orbitals in the ground states of target nuclides: {sup 76}Ge, {sup 76}Se and {sup 78}Se. No significant new data since the 1999 NDS for A = 75 have been reported for {sup 75}As and {sup 75}Se. No data are yet available for excited states in {sup 75}Co, {sup 75}Ni and {sup 75}Sr. For {sup 75}Fe, only the isotopic identification is made with one observed event. The radioactive decay schemes of {sup 75}Co and {sup 75}Ni are unknown while those for {sup 75}Rb and {sup 75}Sr are incomplete. This work supersedes the data presented in the previous NDS evaluation of A = 75 published by 1999Fa05.

73 NUCLEAR PHYSICS AND RADIATION PHYSICS↗
DOE OSTI2013

Structure of odd Ge isotopes with 40 < N < 50

We have interpreted recentlymeasured experimental data of {sup 77}Ge, and also for {sup 73,75,79,81}Ge isotopes in terms of state-of-the-art shell-model calculations. Excitation energies, B(2) values, quadrupole moments and magnetic moments are compared with experimental data when available. The calculations have been performed with the recently derived interactions, namely with JUN45 and jj44b for f{sub 5/2pg9/2} space. We have also performed calculation for fpg{sub 9/2} valence space using an fpg effective interaction with {sup 48}Ca core and imposing a truncation to study the importance of the proton excitations across the Z = 28 shell in this region. The predicted results of jj44b interaction are in good agreement with experimental data.

74 ATOMIC AND MOLECULAR PHYSICS↗
DOE OSTI2019

Magnification Effects in Scanning Tunneling Microscopy: the Role of Surface Radicals

Scanning tunneling microscopy (STM) is a fundamental tool for determination of the surface atomic structure. However, the interpretation of high resolution microscopy images is not straightforward. In this paper we provide a physical insight on how STM images can suggest atomic locations which are distinctively different from the real ones. This effect should be taken into account when interpreting high-resolution STM images obtained on surfaces with directional bonds. It is shown that spurious images are formed in the presence of polarized surface radicals showing a pronounced angle with respect to the surface normal. This issue has been overlooked within the surface science community and often disregarded by experimentalists working with STM. Without loss of generality, we illustrate this effect by the magnification observed for pentamer-like structures on (110), (113), and (331) surfaces of silicon and germanium.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2016

High-precision measurements of the compressibility of chalcogenide glasses at a hydrostatic pressure up to 9 GPa

The volumes of glassy germanium chalcogenides GeSe{sub 2}, GeS{sub 2}, Ge{sub 17}Se{sub 83}, and Ge{sub 8}Se{sub 92} are precisely measured at a hydrostatic pressure up to 8.5 GPa. The stoichiometric GeSe{sub 2} and GeS{sub 2} glasses exhibit elastic behavior in the pressure range up to 3 GPa, and their bulk modulus decreases at pressures higher than 2–2.5 GPa. At higher pressures, inelastic relaxation processes begin and their intensity is proportional to the logarithm of time. The relaxation rate for the GeSe{sub 2} glasses has a pronounced maximum at 3.5–4.5 GPa, which indicates the existence of several parallel structural transformation mechanisms. The nonstoichiometric glasses exhibit a diffuse transformation and inelastic behavior at pressures above 1–2 GPa. The maximum relaxation rate in these glasses is significantly lower than that in the stoichiometric GeSe{sub 2} glasses. All glasses are characterized by the “loss of memory” of history: after relaxation at a fixed pressure, the further increase in the pressure returns the volume to the compression curve obtained without a stop for relaxation. After pressure release, the residual densification in the stoichiometric glasses is about 7% and that in the Ge{sub 17}Se{sub 83} glasses is 1.5%. The volume of the Ge{sub 8}Se{sub 92} glass returns to its initial value within the limits of experimental error. As the pressure decreases, the effective bulk moduli of the Ge{sub 17}Se{sub 83} and Ge{sub 8}Se{sub 92} glasses coincide with the moduli after isobaric relaxation at the stage of increasing pressure, and the bulk modulus of the stoichiometric GeSe{sub 2} glass upon decreasing pressure noticeably exceeds the bulk modulus after isobaric relaxation at the stage of increasing pressure. Along with the reported data, our results can be used to draw conclusions regarding the diffuse transformations in glassy germanium chalcogenides during compression.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Inversion layer on the Ge(001) surface from the four-probe conductance measurements

We report four-probe conductance measurements with sub-micron resolution on atomically clean Ge(001) surfaces. A qualitative difference between n-type and p-type crystals is observed. The scaling behavior of the resistance on n-type samples indicates two-dimensional current flow, while for the p-type crystal a three-dimensional description is appropriate. We interpret this in terms of the formation of an inversion layer at the surface. This result points to the surface states, i.e., dangling bonds, as the driving force behind band bending in germanium. It also explains the intrinsic character of band bending in germanium.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

New Millisecond Isomer Lifetime Measurements at LANSCE

New half-life measurements have been made of the millisecond isomers {sup 71m}Ge, {sup 114m2}I, {sup 208m}Bi, {sup 88m1}Y, {sup 88m2}Y, and {sup 75m}As populated in neutron-induced reactions. These measurements were made using the unique time structure of the LANSCE/WNR neutron source, by observing the γ-ray decays of the isomers during the time between the LANSCE proton macropulses. Two different LANSCE proton beam time structures were used. The GEANIE array of HPGe detectors was used to detect the γ-ray decays.

73 NUCLEAR PHYSICS AND RADIATION PHYSICS↗
DOE OSTI2018

Dynamic Instability of Solid Surfaces under Load

The mechanism of dynamic instability of a solid surface under a load, determined by perturbations of the electron density and the change in the interatomic interaction, is considered. This instability is manifested upon the excitation of dynamic displacements of atoms in the surface layer, which can lead to formation of finite-lifetime structures in the form of waves with a large amplitude. Such structures were earlier observed experimentally on a stretched germanium (111) surface.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2019

Quantum Isotope Effect in Silicon at Low Temperatures

High-precision studies of Raman scattering in isotopically pure {sup 28}Si, {sup 29}Si, {sup 30}Si single crystals have been performed in the temperature range from 8 to 300 K. It has been found that a difference of about (0.4 ± 0.1) cm{sup –1} observed at temperatures T ≤ 100 K between the normalized Raman frequencies of the {sup 28}Si and {sup 30}Si isotopes measured with an accuracy of 0.1 cm{sup –1} is certainly due to quantum effects damping with increasing temperature. The possibility of observing quantum isotope effects in germanium has been estimated using experimental data on isotope effects in diamond and silicon.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2019

Antisite Defects in Ge–Te and Ge–As–Te Semiconductor Glasses

The formation of antisite defects in Ge{sub 20}Te{sub 80} and Ge{sub 15}As{sub 4}Te{sub 81} vitreous alloys in the form of tin atoms in tellurium sites and tellurium atoms in germanium sites is shown by emission Mössbauer spectroscopy with the {sup 119mm}Sn({sup 119m}Sn), {sup 119m}Te({sup 119m}Sn), {sup 125}Sn({sup 125}Te), and {sup 125m}Te({sup 125}Te) isotopes. It is shown that the isovalent substitution of germanium atoms by tin atoms does not vary the symmetry of the local surrounding of germanium sites, while tin and tellurium atoms reconstruct their local surrounding in sites unnatural for them.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2018

Model of a SiGe 130-nm 10- to 30-GHz Chaotic Self-Oscillating System

The problem of generation of utlrawideband chaotic oscillations in the frequency range of 10–30 GHz is considered. This problem is relevant to fifth-generation communication systems. A generator model designed for the silicon–germanium 130-nm process technology is proposed and studied.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2012

High-rate, Low-cost Process for High-Efficiency Flexible c-Si PV

The film c-Si based photovoltaics on RABiTS substrates would be capable of achieving efficiency above 15%, but at costs comparable to thin films. Utilizing a uniquely-textured and flexible metal substrate developed at the superconducting materials program at ORNL, coupled to an NREL breakthrough in hotwire chemical vapor deposition (HWCVD) processes, silicon heteroepitaxy is for the first time being directly-deposited out of silane gas, into a silicon structure that is less than 5 microns thick, crystallographically-oriented, and large-grained – ideal for solar PV power generation. We have recently overcome the problem of Ni and Cu diffusion into Si forming NiSi/CuSi towers through buffer development. Due to the lattice mismatch between the oxide cap layer and Si, recombination-active threading dislocation defects form in the silicon layer. We can lattice match the buffer with silicon by alloying with germanium, which can subsequently be graded out for the actual device layer. The main goal of this project is to develop a physical vapor deposition process for the growth Silicon, Germanium, or Silicon-Germanium alloy films.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Anomalous patterns and nearly defect-free ripples produced by bombarding silicon and germanium with a beam of gold ions

We demonstrate that surface ripples with an exceptionally high degree of order can develop when germanium is bombarded with a broad beam of gold ions. In contrast, if silicon is sputtered with an Au{sup −} beam, patches of ripples with two distinct wave vectors can emerge. These types of order can be understood if the coupling between the surface morphology and composition is taken into account.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2012

Rhenium ion beam for implantation into semiconductors

At the ion source test bench in Institute for Theoretical and Experimental Physics the program of ion source development for semiconductor industry is in progress. In framework of the program the Metal Vapor Vacuum Arc ion source for germanium and rhenium ion beam generation was developed and investigated. It was shown that at special conditions of ion beam implantation it is possible to fabricate not only homogenous layers of rhenium silicides solid solutions but also clusters of this compound with properties of quantum dots. At the present moment the compound is very interesting for semiconductor industry, especially for nanoelectronics and nanophotonics, but there is no very developed technology for production of nanostructures (for example quantum sized structures) with required parameters. The results of materials synthesis and exploration are presented.

36 MATERIALS SCIENCE↗
DOE OSTI2012

Growth and Magnetic Properties of Mn-doped Germanium near the Kinetic Solubility Limit

Growth of high-quality dilute magnetic semiconductor (DMS) material is often compromised by the low solubility of magnetic dopants, leading to formation of precipitates. Here, we explore the feasibility of growing precipitate-free Mn-doped Ge at doping levels near the kinetic solubility limit. Ge:Mn DMS films were grown at low temperature so as to minimize precipitate formation. Meanwhile, epitaxial quality was maintained by employing a very low growth rate. The magnetic properties of these lightly doped films exhibit both interesting contrasts and similarities with those of heavily-doped DMS reported in the literature, indicating that the substitutional Mn contents are very similar. Films grown at 95 degree C are free of intermetallic precipitates, offering useful opportunities for studying the fundamentals of carrier mediated exchange and metal insulator transitions without complications arising from precipitate formation.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2016

A method for distinguishing between propagons, diffusions, and locons

The majority of intuition on phonon transport has been derived from studies of homogenous crystalline solids, where the atomic composition and structure are periodic. For this specific class of materials, the solutions to the equations of motions for the atoms (in the harmonic limit) result in plane wave modulated velocity fields for the normal modes of vibration. However, it has been known for several decades that whenever a system lacks periodicity, either compositional or structural, the normal modes of vibration can still be determined (in the harmonic limit), but the solutions take on different characteristics and many modes may not be plane wave modulated. Previous work has classified the types of vibrations into three primary categories, namely, propagons, diffusions, and locons. One can use the participation ratio to distinguish locons, from propagons and diffusons, which measures the extent to which a mode is localized. However, distinguishing between propagons and diffusons has remained a challenge, since both are spatially delocalized. Here, we present a new method that quantifies the extent to which a mode's character corresponds to a propagating mode, e.g., exhibits plane wave modulation. This then allows for clear and quantitative distinctions between propagons and diffusons. By resolving this issue quantitatively, one can now automate the classification of modes for any arbitrary material or structure, subject to a single constraint that the atoms must vibrate stably around their respective equilibrium sites. Several example test cases are studied including crystalline silicon and germanium, crystalline silicon with different defect concentrations, as well as amorphous silicon, germanium, and silica.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2014

AC transport in p-Ge/GeSi quantum well in high magnetic fields

The contactless surface acoustic wave technique is implemented to probe the high-frequency conductivity of a high-mobility p-Ge/GeSi quantum well structure in the regime of integer quantum Hall effect (IQHE) at temperatures 0.3–5.8 K and magnetic fields up to 18 T. It is shown that, in the IQHE regime at the minima of conductivity, holes are localized and ac conductivity is of hopping nature and can be described within the “two-site” model. The analysis of the temperature and magnetic-field-orientation dependence of the ac conductivity at odd filing factors enables us to determine the effective hole g-factor, |g{sub zz}|≈4.5. It is shown that the in-plane component of the magnetic field leads to a decrease in the g-factor as well as increase in the cyclotron mass, which is explained by orbital effects in the complex valence band of germanium.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗