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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 19 records
All sourcesNASA NTRSDOE OSTI
DOE OSTI2011

Evidence of network demixing in GeS{sub 2}-Ga{sub 2}S{sub 3} chalcogenide glasses: A phase transformation study

The information of phase transformation is attained by in situ XRD experiments leading to the knowledge of topological threshold in GeS{sub 2}-Ga{sub 2}S{sub 3} glasses. The turning point of phase transformation behavior is demonstrated to be glasses containing 14-15 mol% Ga{sub 2}S{sub 3}. To interpret it a network demixing model is further improved and proposed for the structure of these ternary or quasi-binary chalcogenide glasses. For the nearest-neighbor coordination environment of glass with a transitional composition of 85.7 mol% (6/7) GeS{sub 2}.14.3 mol% (1/7) Ga{sub 2}S{sub 3}, six-coordinated [S{sub 3}Ga-X-GaS{sub 3}] units (X=S or None) are well isolated by the [GeS{sub 4}] structures, which contributes to the decreasing of precipitation of Ga{sub 2}S{sub 3} crystals in (100-x)GeS{sub 2}-xGa{sub 2}S{sub 3} (x{<=}14.3) glasses corresponding to the experimental evidence of the phase transformation behavior. This scenario of intermediate-range structural order, firstly, includes the arrangement of structural units which is consistent with and provides an atomistic explanation of the compositional evolution of phase transformation behavior in these glasses. -- Graphical abstract: Synopsis: network demixing in GeS{sub 2}-Ga{sub 2}S{sub 3} chalcogenide glasses. Display Omitted Highlights: {yields} Phase transformation in GeS{sub 2}-Ga{sub 2}S{sub 3} glasses. {yields} Turning point of the phase transformation behavior. {yields} Medium-range order structure of chalcogenide glasses. {yields} Network demixing model for GeS{sub 2}-Ga{sub 2}S{sub 3} glasses.

36 MATERIALS SCIENCE↗
DOE OSTI2011

Spontaneous formation of highly regular superlattice structure in InGaN epilayers grown by molecular beam epitaxy

In this letter, we have investigated the structural properties of thick InGaN layers grown on GaN by plasma-assisted molecular beam epitaxy, using two growth rates of 1.0 and 3.6 A/s. A highly regular superlattice (SL) structure is found to be spontaneously formed in the film grown at 3.6 A/s but not in the film grown at 1.0 A/s. The faster grown film also exhibits superior structural quality, which could be due to the surface roughness suppression caused by kinetic limitation, and the inhibition of the Frank-Read dislocation generation mechanism within the spontaneously formed SL structure.

36 MATERIALS SCIENCE↗
DOE OSTI2011

Low energy electron beam induced damage on InGaN/GaN quantum well structure

In this paper, low energy electron beam (5-20 keV, 0-500 {mu}As/cm{sup 2}) induced damage on a GaN/InGaN/GaN near-surface quantum well structure is studied. Exposure to low energy electron beam is shown to significantly reduce the optical quality of the structure. It is also observed that reducing the electron beam energy causes larger PL intensity reduction. This can be explained by considering the beam penetration depth, which is shown to be smaller with lower e-beam energies. The damage is believed to be attributed to enhanced dislocation mobility upon low energy electron beam irradiation. However, further studies are needed to confirm the mechanism. These results should be taken into consideration in low energy electron beam related sample characterization and preparation.

36 MATERIALS SCIENCE↗
DOE OSTI2011

Improved luminescence and thermal stability of semipolar (11-22) InGaN quantum dots

Semipolar (11-22)-oriented InGaN/GaN quantum dots (QDs) emitting in the 380-620 nm spectral range were synthesized by plasma-assisted molecular-beam epitaxy. The influence of the growth temperature on the properties of InGaN QDs has been investigated by photoluminescence and transmission electron microscopy. Growth temperatures low enough to prevent indium desorption provide a favorable environment to semipolar plane (11-22) to enhance the internal quantum efficiency of InGaN/GaN nanostructures.

36 MATERIALS SCIENCE↗
DOE OSTI2011

A InGaN/GaN quantum dot green ({lambda}=524 nm) laser

The characteristics of self-organized InGaN/GaN quantum dot lasers are reported. The laser heterostructures were grown on c-plane GaN substrates by plasma-assisted molecular beam epitaxy and the laser facets were formed by focused ion beam etching with gallium. Emission above threshold is characterized by a peak at 524 nm (green) and linewidth of 0.7 nm. The lowest measured threshold current density is 1.2 kA/cm{sup 2} at 278 K. The slope and wall plug efficiencies are 0.74 W/A and {approx}1.1%, respectively, at 1.3 kA/cm{sup 2}. The value of T{sub 0}=233 K in the temperature range of 260-300 K.

36 MATERIALS SCIENCE↗
DOE OSTI2011

Analyzing the growth of In{sub x}Ga{sub 1-x}N/GaN superlattices in self-induced GaN nanowires by x-ray diffraction

Self-induced GaN nanowires are grown by plasma-assisted molecular beam epitaxy, with In{sub x}Ga{sub 1-x}N quantum wells inserted to form an axial superlattice. From the {omega}-2{theta} scans of a laboratory x-ray diffraction experiment, we obtain the superlattice period, the thickness of the quantum wells, and the In content in this layer. The axial growth rate of the In{sub x}Ga{sub 1-x}N quantum wells is significantly enhanced, which we attribute to increased Ga diffusion along the nanowire sidewalls in the presence of In.

36 MATERIALS SCIENCE↗
DOE OSTI2011

Ne{sup +} ion sputtering effect on amorphous Ga-In-Zn-O thin-film surface investigated by high-resolution XPS

The effect of Ne{sup +} ion sputtering on amorphous Ga-In-Zn-O (a-GIZO) thin films was investigated by using surface-sensitive, synchrotron-radiation-based, high-resolution X-ray photoelectron spectroscopy (XPS). a-GIZO thin films having different compositions (Ga{sub 2}O{sub 3}:In{sub 2}O{sub 3}:ZnO = 1:1:1, 2:2:1, 3:2:1, 4:2:1) were investigated. It was found out that the amounts of the In and Zn contents relative to that of Ga decreased noticeably after sufficient sputtering, and that there occurred a subgap state above the valence band maximum and metallic states at the In 3d and 4d core levels as well as at the Fermi edge.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2011

Strong circular photogalvanic effect in ZnO epitaxial films

A strong circular photogalvanic effect (CPGE) in ZnO epitaxial films was reported under interband excitation. It was observed that CPGE current is as large as 100 nA/W in ZnO, which is about one order in magnitude higher than that in InN film while the CPGE currents in GaN films are not detectable. The possible reasons for the above observations are the strong spin orbit coupling in ZnO or the inversed valence band structure of ZnO.

36 MATERIALS SCIENCE↗
DOE OSTI2013

Point defects introduced by InN alloying into In{sub x}Ga{sub 1-x}N probed using a monoenergetic positron beam

Native defects in In{sub x}Ga{sub 1-x}N (x = 0.06-0.14) grown by metal organic chemical vapor deposition were studied using a monoenergetic positron beam. Measurements of Doppler broadening spectra of the annihilation radiation as a function of incident positron energy for In{sub x}Ga{sub 1-x}N showed that vacancy-type defects were introduced with increasing InN composition, and the major defect species was identified as complexes between a cation vacancy and a nitrogen vacancy. The concentration of the divacancy, however, was found to be suppressed by Mg doping. The momentum distribution of electrons at the In{sub x}Ga{sub 1-x}N/GaN interface was close to that in defect-free GaN or In{sub x}Ga{sub 1-x}N, which was attributed to localization of positrons at the interface due to the built-in electric field, and to suppression of positron trapping by vacancy-type defects. We have also shown that the diffusion property of positrons is sensitive to an electric field near the In{sub x}Ga{sub 1-x}N/GaN interface.

36 MATERIALS SCIENCE↗
DOE OSTI2013

Near-infrared InN quantum dots on high-In composition InGaN

We report the growth of InN quantum dots (QDs) on thick InGaN layers with high In composition (>50%) by molecular beam epitaxy. Optimized growth conditions are identified for the InGaN layers at reduced growth temperature and increased active N flux resulting in minimized phase separation and defect generation. The InN QDs grown on top of the optimized InGaN layer exhibit small size, high density, and photoluminescence up to room temperature. The InN/InGaN QDs reveal excellent potential for intermediate band solar cells with the InGaN and InN QD bandgap energies tuned to the best match of absorption to the solar spectrum.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
DOE OSTI2013

Spontaneous formation of InGaN nanowall network directly on Si

We present the study on epitaxial growth of an InGaN nanowall network directly on Si by plasma-assisted molecular beam epitaxy. Scanning electron microscopy, high-resolution X-ray diffraction, and transmission electron microscopy together with energy-dispersive X-ray analysis infer the crystalline nature of the InGaN nanowall network, oriented along the C-axis, with In composition ranging from pure GaN to 40%. Room temperature photoluminescence is observed, indicating good optical quality. The nanowall network is highly in-plane electrically conductive.

36 MATERIALS SCIENCE↗
DOE OSTI2013

In situ analyses on negative ions in the indium-gallium-zinc oxide sputtering process

The origin of negative ions in the dc magnetron sputtering process using a ceramic indium-gallium-zinc oxide target has been investigated by in situ analyses. The observed negative ions are mainly O{sup -} with energies corresponding to the target voltage, which originates from the target and barely from the reactive gas (O{sub 2}). Dissociation of ZnO{sup -}, GaO{sup -}, ZnO{sub 2}{sup -}, and GaO{sub 2}{sup -} radicals also contributes to the total negative ion flux. Furthermore, we find that some sputtering parameters, such as the type of sputtering gas (Ar or Kr), sputtering power, total gas pressure, and magnetic field strength at the target surface, can be used to control the energy distribution of the O{sup -} ion flux.

36 MATERIALS SCIENCE↗
DOE OSTI2014

Structure and strain relaxation effects of defects in In{sub x}Ga{sub 1–x}N epilayers

The formation of trench defects is observed in 160 nm-thick In{sub x}Ga{sub 1–x}N epilayers with x≤0.20, grown on GaN on (0001) sapphire substrates using metalorganic vapour phase epitaxy. The trench defect density increases with increasing indium content, and high resolution transmission electron microscopy shows an identical structure to those observed previously in InGaN quantum wells, comprising meandering stacking mismatch boundaries connected to an I₁-type basal plane stacking fault. These defects do not appear to relieve in-plane compressive strain. Other horizontal sub-interface defects are also observed within the GaN pseudosubstrate layer of these samples and are found to be pre-existing threading dislocations which form half-loops by bending into the basal plane, and not basal plane stacking faults, as previously reported by other groups. The origins of these defects are discussed and are likely to originate from a combination of the small in-plane misorientation of the sapphire substrate and the thermal mismatch strain between the GaN and InGaN layers grown at different temperatures.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Long wavelength emitting GaInN quantum wells on metamorphic GaInN buffer layers with enlarged in-plane lattice parameter

Metamorphic (i.e., linear composition graded) GaInN buffer layers with an increased in-plane lattice parameter, grown by plasma-assisted molecular beam epitaxy, were used as templates for metal organic vapor phase epitaxy (MOVPE) grown GaInN/GaInN quantum wells (QWs), emitting in the green to red spectral region. A composition pulling effect was observed allowing considerable higher growth temperatures for the QWs for a given In composition. The internal quantum efficiency (IQE) of the QWs was determined by temperature and excitation power density dependent photoluminescence (PL) spectroscopy. An increase in IQE by a factor of two was found for green emitting QWs grown on metamorphic GaInN buffer compared to reference samples grown on standard GaN buffer layers. The ratio of room temperature to low temperature intensity PL of the red emitting QWs were found to be comparable to the PL efficiency of green emitting QWs, both grown on metamorphic GaInN buffers. The excitation density and well width dependence of the IQE indicate a reduction of the quantum confined Stark effect upon growth on GaInN buffer layers with increased in-plane lattice parameter.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2011

Controlled synthesis of monodispersed AgGaS{sub 2} 3D nanoflowers and the shape evolution from nanoflowers to colloids

Monodispersed AgGaS{sub 2} three-dimensional (3D) nanoflowers have been successfully synthesized in a 'soft-chemical' system with the mixture of 1-octyl alcohol and cyclohexane as reaction medium and oleylamine as surfactant. The crystal phase, morphology and chemical composition of the as-prepared products were characterized by X-ray diffraction (XRD), transmission electron microscopy (TEM), and high-resolution TEM (HTEM), respectively. Results reveal that the as-synthesized AgGaS{sub 2} nanoflowers are in tetragonal structure with 3D flower-like shape. Controlled experiments demonstrated that the shape transformation of AgGaS{sub 2} nanocrystals from 3D nanoflowers (50 nm) to nanoparticles (10-20 nm) could be readily realized by tuning the reaction parameters, e.g., the ratio of octanol to cyclohexane, the length of carbon chain of fatty alcohol, the concentration of oleylamine, etc. The UV-vis and PL spectra of the obtained AgGaS{sub 2} nanoflowers and colloids were researched. In addition, the photoelectron energy conversion (SPV) of AgGaS{sub 2} nanoflowers was further researched by the surface photovoltage spectra. -- Graphical abstract: Various AgGaS{sub 2} nanocrystals with different morphologies and sizes including 3D nanoflowers (a) and colloids (b) were synthesized in mixed solvent reaction system and their PL spectra was researched (c). Display Omitted highlights: > Ternary chalcogenide AgGaS{sub 2} nanocrystals were synthesized in a simple mixed solvent system. > The shape and size transformation of AgGaS{sub 2} from 3D nanoflowers to colloids could be tuned effectively. > AgGaS{sub 2} nanoflowers was obtained with relatively insufficient ligands protection in reaction system, otherwise, AgGaS{sub 2} colloids was obtained. > Provide a new choice to prepare ternary nanomaterials and further understand the reaction mechanisms along with the growth kinetics of ternary nanocrystals.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2011

Effect of Cr and Mn ions on the structure and magnetic properties of GaFeO{sub 3}: Role of the substitution site

Effect of substitution of Cr and Mn in the Fe and Ga sites of GaFeO{sub 3} on the structural parameters and magnetic properties has been investigated by preparing GaFe{sub 1-x}Cr{sub x}(Mn{sub x})O{sub 3} and Ga{sub 1-x}Cr{sub x}(Mn{sub x})FeO{sub 3} starting with appropriate oxide precursors. It is shown that, starting with Cr or Mn substituted Ga{sub 2}O{sub 3}, one obtains Ga{sub 1-x}Cr{sub x}(Mn{sub x})FeO{sub 3}, while reaction of Cr or Mn substituted {alpha}-Fe{sub 2}O{sub 3} with Ga{sub 2}O{sub 3} yields GaFe{sub 1-x}Cr{sub x}(Mn{sub x})O{sub 3}. The structural parameters and magnetic properties vary significantly with the substitution site of Cr showing a large decrease in the unit cell parameters as well as the T{sub C} and other magnetic properties when the substitution is at the octahedral Fe (1, 2) site. Substitution of Cr at the octahedral Ga2 site results in marginal changes. Substitution of Mn in the Ga and Fe sites also show differences although the changes themselves are much smaller. First-principles calculations confirm such site-specificity and show how Cr substitution affects the properties differently when substituted at the Ga2 and Fe1 sites. - Graphical abstract: The important role of site-specific substitution of transition metal ions on the structure and magnetic properties of GaFeO{sub 3} has been investigated experimentally and theoretically. Highlights: > Substitution of transition metal ions to specific cation site. > Ionic radii of the cation dictate the disorder associated with the specific site. > Site-specificity explains magnetic ordering and structural parameters.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2011

Green luminescence of InGaN nanowires grown on silicon substrates by molecular beam epitaxy

Indium gallium nitride nanowires show promise as being prime candidates for optical devices since they can be grown with band gaps spanning the visible spectra, while at the same time can be composed of stress free material. The goal of the work presented here was to obtain InGaN nanowires producing green emission at room temperature. Two growth recipes were found to yield InGaN nanowire growth on silicon substrates using plasma-assisted molecular beam epitaxy. At room temperature the photoluminescence (PL) of wire ensembles indeed peaked at 530 nm but, in addition, it was discovered that at low temperatures the emission often covered a broader (360-700 nm) spectrum. This broad optical range indicated indium content fluctuations in individual wires, wire-to-wire fluctuations, or a combination of the two. EDX measurements performed on single wires confirmed this hypothesis and correlated well with PL data. Low temperature PL studies of InGaN individual wires also revealed interwire and intrawire inhomogeneity of emission spectra stemming from a nonuniform indium distribution. The emission quantum yield for bright single wires was extracted to be more than 50% at 4 K. The findings suggest that the wire surfaces do not efficiently quench optical emission at low temperatures. These defect-free wires offer not only a potential path for green emitters, but also as integrated phosphors for broad spectral emission.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2011

Barrier height of Pt-In{sub x}Ga{sub 1-x}N (0{<=}x{<=}0.5) nanowire Schottky diodes

The barrier height of Schottky diodes made on In{sub x}Ga{sub 1-x}N nanowires have been determined from capacitance-voltage measurements. The nanowires were grown undoped on n-type (001) silicon substrates by plasma-assisted molecular beam epitaxy. The length, diameter and density of the nanowires are {approx}1 {mu}m, 20 nm, and 1x10{sup 11} cm{sup -2}. The Schottky contact was made on the top surface of the nanowires with Pt after planarizing with parylene. The measured barrier height {Phi}{sub B} varies from 1.4 eV (GaN) to 0.44 eV (In{sub 0.5}Ga{sub 0.5}N) and agrees well with the ideal barrier heights in the Schottky limit.

77 NANOSCIENCE AND NANOTECHNOLOGY↗