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At least 19 records
All sourcesNASA NTRSDOE OSTI
DOE OSTI2025

Design of Zn Chalcogenide Shells for Emissive Ga-Rich In 1– X Ga X As Quantum Dots Synthesized in Molten Salts

Colloidal quantum dots (QDs) have seen expanded applications in optoelectronics from visible to near-infrared (NIR) wavelengths. However, the options for QDs with bright and size-tunable emission in the NIR region are mostly limited to heavy-metal-based (Pb, Cd, Hg) semiconductors. Here, Ga-rich In 1–X Ga X As QDs with zinc chalcogenide shells are demonstrated as candidates for NIR emitters. Based on new developments in inorganic molten salt chemistry, we synthesized colloidal In 1–X Ga X As QDs containing up to 85% gallium with high crystallinity based on Raman and XRD analyses. Zinc selenide and sulfide shells with different morphologies were grown on In 1–X Ga X As QDs by controlling the Zn precursor chemistry. Despite the nominally reduced lattice mismatch in the In 1–X Ga X As/ZnSe heterostructure, a ZnS shell was found to be a much more effective passivation material: In 1–X Ga X As/ZnS core–shell QDs show a photoluminescence quantum yield (PL QY) of about 30% versus 11% for ZnSe shells. In conclusion, based on the analysis of PL decay and transient absorption (TA) dynamics, we surmise that electron trapping is the major reason for efficiency loss, providing a clear heterostructure design principle for realizing efficient NIR-emitting In 1–X Ga X As QDs.

Electron trapping↗
DOE OSTI2014

Nuclear Data Sheets for A=85

Evaluated experimental data are presented for 13 known nuclides of mass 85 (Zn, Ga, Ge, As, Se, Br, Kr, Rb, Sr, Y, Zr, Nb, Mo). Since the previous 1990 evaluation of A=85, {sup 85}Zn, {sup 85}Ga, {sup 85}Ge and {sup 85}nuclides are newly added here. Excited state data for {sup 85}Se, {sup 85}Zr have become available from radioactive decay and in–beam γ–ray studies. New and improved high–spin data are available for {sup 85}Br, {sup 85}Kr, {sup 85}Rb, {sup 85}Y, {sup 85}Nb and {sup 85}Mo. New direct and precise measurement of atomic masses of {sup 85}Ge, {sup 85}As, {sup 85}Se, {sup 85}Br, {sup 85}Rb, {sup 85}Zr, {sup 85}Nb and {sup 85}Mo have greatly improved the landscape of β decay–Q values and separation energies in this mass region. In spite of extensive experimental work on the isobaric nuclei of this mass chain several deficiencies remain. No excited states are known in {sup 85}Zn, {sup 85}Ga, {sup 85}As. Only a few excited state are assigned in {sup 85}Ge from {sup 85}Ga β– decay. From radioactivity studies, the decay schemes of {sup 85}Zn and {sup 85}Mo are not known, and those for {sup 85}Ga, {sup 85}Ge, {sup 85}As and 10.9–s isomer of {sup 85}Zr are incomplete. Level lifetimes are not known for excited states in {sup 85}Se, {sup 85}Br, {sup 85}Nb and {sup 85}Mo. The {sup 85}Tc nuclide has not been detected in fragmentation experiments at GANIL, alluding to its unbound nature for proton emission. The {sup 85}Kr, {sup 85}Rb, {sup 85}Sr, and {sup 85}Y nuclides remain the most extensively studied from many different reactions and decays. The evaluation of A=85 nuclides has been done after a span of 23 years, thus includes an extensive amount of new data for almost each nuclide. This work supersedes the data for A=85 nuclides presented in earlier full NDS publication by J. Tepel in 1980Te04 and a later one published in an update mode by H. Sievers in 1991Si01.

73 NUCLEAR PHYSICS AND RADIATION PHYSICS↗
DOE OSTI2020

Mass measurements of neutron-rich gallium isotopes refine production of nuclei of the first r -process abundance peak in neutron-star merger calculations

We report mass measurements of neutron-rich Ga isotopes 80–85 Ga with TRIUMF's Ion Trap for Atomic and Nuclear science. The measurements determine the masses of 80–83 Ga in good agreement with previous measurements. Here, the masses of 84 Ga and 85 Ga were measured for the first time. Uncertainties between 25 and 48 keV were reached. The new mass values reduce the nuclear uncertainties associated with the production of A ≈ 84 isotopes by the r-process for astrophysical conditions that might be consistent with a binary neutron star (BNS) merger producing a blue kilonova. Our nucleosynthesis simulations confirm that BNS merger may contribute to the first abundance peak under moderate neutron-rich conditions with electron fractions Y e = 0.35–0.38.

59 ≤ A ≤ 89↗
DOE OSTI2016

Factors affecting eluation characteristics of sorption generators of technetium-99m

The influence of the adsorbed mass of molybdenum on the width of eluation profiles of generators and the patterns of molybdenum distribution in the amount of chromatographic columns by scanning them on the germanium-gallium detector using collimating device are studied. The boundary conditions under which the maximum value of {sup 99m}Tc yield from generators Y{sub e} = 1 are defined. After scanning the columns, it was found out that the degree of filling the columns with molybdenum Q and the value of its maximum adsorption depend naturally on the total weight of the adsorbed mass. In order to achieve the condition Y{sub e} = 1 the value of Q should be at least 85%.

07 ISOTOPE AND RADIATION SOURCES↗
DOE OSTI2015

Simulation study of 14-nm-gate III-V trigate field effect transistor devices with In{sub 1−x}Ga{sub x}As channel capping layer

In this work, we study characteristics of 14-nm-gate InGaAs-based trigate MOSFET (metal-oxide-semiconductor field effect transistor) devices with a channel capping layer. The impacts of thickness and gallium (Ga) concentration of the channel capping layer on the device characteristic are firstly simulated and optimized by using three-dimensional quantum-mechanically corrected device simulation. Devices with In{sub 1−x}Ga{sub x}As/In{sub 0.53}Ga{sub 0.47}As channels have the large driving current owing to small energy band gap and low alloy scattering at the channel surface. By simultaneously considering various physical and switching properties, a 4-nm-thick In{sub 0.68}Ga{sub 0.32}As channel capping layer can be adopted for advanced applications. Under the optimized channel parameters, we further examine the effects of channel fin angle and the work-function fluctuation (WKF) resulting from nano-sized metal grains of NiSi gate on the characteristic degradation and variability. To maintain the device characteristics and achieve the minimal variation induced by WKF, the physical findings of this study indicate a critical channel fin angle of 85{sup o} is needed for the device with an averaged grain size of NiSi below 4x4 nm{sup 2}.

36 MATERIALS SCIENCE↗
DOE OSTI2022

A Molten Salt Electrochemical Process for the Preparation of Cost-Effective p-Block (Coating) Materials

Solar energy applications rely heavily on p-block elements and transition metals. Silicon is, by far, the most commonly used material in photovoltaic cells and accounts for about 85% of modules sold presently. Of late, thin film photovoltaic cells have gained momentum because of their higher efficiencies. Most of these thin film devices are made out of just five elements, namely, cadmium, tellurium, selenium, indium, gallium and copper. The present manuscript describes an elegant and inexpensive molten salt-based electrolytic process for fabricating a tellurium-coated metallic substrate. A three-electrode set up was employed to coat iridium with tellurium from a molten bath containing lithium chloride, lithium oxide and tellurium tetrachloride (LiCl-Li 2 O-TeCl 4 ) at 650 °C for a duration ranging from 30 to 120 min under a galvanostatic mode. The tellurium coating was observed to be thick, uniform, smooth and homogeneous. Additionally, the deposited tellurium did not chemically react with the iridium substrate to form intermetallic compounds, which is a good feature from the standpoint of the device’s performance characteristics. The present process, being generic in nature, shows the potential for the manufacture of both the coated substates and high-purity elements not just for tellurium but also for other p-block elements.

36 MATERIALS SCIENCE↗
DOE OSTI2014

Investigation of effective base transit time and current gain modulation of light-emitting transistors under different ambient temperatures

In this report, the modulation of current gain of InGaP/GaAs light-emitting transistors under different ambient temperatures are measured and analyzed using thermionic emission model of quantum well embedded in the transistor base region. Minority carriers captured by quantum wells gain more energy at high temperatures and escape from quantum wells resulting in an increase of current gain and lower optical output, resulting in different I-V characteristics from conventional heterojunction bipolar transistors. The effect of the smaller thermionic lifetime thus reduces the effective base transit time of transistors at high temperatures. The unique current gain enhancement of 27.61% is achieved when operation temperature increase from 28 to 85 °C.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2016

Isotype InGaN/GaN heterobarrier diodes by ammonia molecular beam epitaxy

The design of isotype InGaN/GaN heterobarrier diode structures grown by ammonia molecular beam epitaxy is presented. On the (0001) Ga-polar plane, a structure consisting of a surface n{sup +} GaN contact layer, followed by a thin InGaN layer, followed by a thick unintentionally doped (UID) GaN layer, and atop a buried n{sup +} GaN contact layer induces a large conduction band barrier via a depleted UID GaN layer. Suppression of reverse and subthreshold current in such isotype barrier devices under applied bias depends on the quality of this composite layer polarization. Sample series were grown under fixed InGaN growth conditions that varied either the UID GaN NH{sub 3} flow rate or the UID GaN thickness, and under fixed UID GaN growth conditions that varied InGaN growth conditions. Decreases in subthreshold current and reverse bias current were measured for thicker UID GaN layers and increasing InGaN growth rates. Temperature-dependent analysis indicated that although extracted barrier heights were lower than those predicted by 1D Schrödinger Poisson simulations (0.9 eV–1.4 eV for In compositions from 10% to 15%), optimized growth conditions increased the extracted barrier height from ∼11% to nearly 85% of the simulated values. Potential subthreshold mechanisms are discussed, along with those growth factors which might affect their prevalence.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2014

Circular dichroism in a three-dimensional semiconductor chiral photonic crystal

Circular dichroism covering the telecommunication band is experimentally demonstrated in a semiconductor-based three-dimensional chiral photonic crystal (PhC). We design a rotationally stacked woodpile PhC structure where neighboring layers are rotated by 60° and three layers construct a single helical unit. The mirror-asymmetric PhC made from GaAs with sub-micron periodicity is fabricated by a micro-manipulation technique. Due to the large contrast of refractive indices between GaAs and air, the experimentally obtained circular dichroism extends over a wide wavelength range, with the transmittance of right-handed circularly polarized incident light being 85% and that of left-handed light being 15% at a wavelength of 1.3 μm. The obtained results show good agreement with numerical simulations.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2018

Epitaxial InGaAs/InAlAs/AlAs Structures for Heterobarrier Varactors with Low Leakage Current

The quality of heteroboundaries and optimal conditions for epitaxial growth are critical parameters for obtaining low leakage currents of heterobarrier varactors in the InGaAs/InAlAs/AlAs material system. Grown by molecular-beam epitaxy, three-barrier heterobarrier varactor structures adjacent to InAlAs/AlAs/InAlAs barrier layers by additional mismatched InGaAs layers subjected to compressive stress show, under optimal epitaxy conditions, extremely low levels of leakage current density (not more than 0.06 A/cm{sup 2} at a voltage of 5 V and 85°C) with relatively thin AlAs inserts (with a thickness of 2 nm).

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2015

GaSb-based composite quantum wells for laser diodes operating in the telecom wavelength range near 1.55-μm

We have investigated in detail the material, optical, and lasing properties of innovative GaInSb/AlInSb composite quantum wells (CQWs). The CQWs are confined by AlGaAsSb barrier layers, and a monolayer-thin AlInSb barrier layer has been inserted within the GaInSb QWs in order to achieve lasing emission within the telecom window. High-resolution X-ray diffraction, transmission electron microscopy, and photoluminescence spectroscopies reveal high structural quality of the samples. Inserting AlInSb layers allows wider QWs, and thus higher gain-material volume and CQW/optical mode overlap. This translates into better laser performances. Near room temperature, a threshold current of 85 mA and an output power of ∼30 mW/uncoated-facet under continuous wave operation are demonstrated at 1.55 μm with 10 μm × 1 mm laser diodes.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
DOE OSTI2023

Improving Strain-localized GaSe Single Photon Emitters with Electrical Doping

Exciton localization through nanoscale strain has been used to create highly efficient single-photon emitters (SPEs) in 2D materials. However, the strong Coulomb interactions between excitons can lead to nonradiative recombination through exciton–exciton annihilation, negatively impacting SPE performance. Here, we investigate the effect of Coulomb interactions on the brightness, single photon purity, and operating temperatures of strain-localized GaSe SPEs by using electrostatic doping. By gating GaSe to the charge neutrality point, the exciton–exciton annihilation nonradiative pathway is suppressed, leading to ∼60% improvement of emission intensity and an enhancement of the single photon purity g (2) (0) from 0.55 to 0.28. The operating temperature also increased from 4.5 K to 85 K consequently. In conclusion, this research provides insight into many-body interactions in excitons confined by nanoscale strain and lays the groundwork for the optimization of SPEs for optoelectronics and quantum photonics.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2014

Optical characteristics of nanocrystalline Al{sub x}Ga{sub 1−x}N thin films deposited by hollow cathode plasma-assisted atomic layer deposition

Gallium nitride (GaN), aluminum nitride (AlN), and Al{sub x}Ga{sub 1−x}N films have been deposited by hollow cathode plasma-assisted atomic layer deposition at 200 °C on c-plane sapphire and Si substrates. The dependence of film structure, absorption edge, and refractive index on postdeposition annealing were examined by x-ray diffraction, spectrophotometry, and spectroscopic ellipsometry measurements, respectively. Well-adhered, uniform, and polycrystalline wurtzite (hexagonal) GaN, AlN, and Al{sub x}Ga{sub 1−x}N films were prepared at low deposition temperature. As revealed by the x-ray diffraction analyses, crystallite sizes of the films were between 11.7 and 25.2 nm. The crystallite size of as-deposited GaN film increased from 11.7 to 12.1 and 14.4 nm when the annealing duration increased from 30 min to 2 h (800 °C). For all films, the average optical transmission was ∼85% in the visible (VIS) and near infrared spectrum. The refractive indices of AlN and Al{sub x}Ga{sub 1−x}N were lower compared to GaN thin films. The refractive index of as-deposited films decreased from 2.33 to 2.02 (λ = 550 nm) with the increased Al content x (0 ≤ x ≤ 1), while the extinction coefficients (k) were approximately zero in the VIS spectrum (>400 nm). Postdeposition annealing at 900 °C for 2 h considerably lowered the refractive index value of GaN films (2.33–1.92), indicating a significant phase change. The optical bandgap of as-deposited GaN film was found to be 3.95 eV, and it decreased to 3.90 eV for films annealed at 800 °C for 30 min and 2 h. On the other hand, this value increased to 4.1 eV for GaN films annealed at 900 °C for 2 h. This might be caused by Ga{sub 2}O{sub 3} formation and following phase change. The optical bandgap value of as-deposited Al{sub x}Ga{sub 1−x}N films decreased from 5.75 to 5.25 eV when the x values decreased from 1 to 0.68. Furthermore, postdeposition annealing did not affect the bandgap of Al-rich films.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2019

Influence of Output Optical Losses on the Dynamic Characteristics of 1.55-μm Wafer-Fused Vertical-Cavity Surface-Emitting Lasers

The results of studying the dynamic characteristics of 1.55-μm single-mode vertical-cavity surface-emitting lasers (VCSELs) formed by the fusion of wafers of high-quality Bragg reflectors and an active region based on thin highly strained InGaAs/InAlGaAs quantum wells are presented. It is found that the proposed design of the active region and optical microcavity of the laser make it possible in principle to attain a high level of differential laser gain in the temperature range of 20°C–85°C, but weak electron localization leads to an increase in gain compression at elevated temperatures. Due to this fact, the VCSEL modulation bandwidth at 20°C can be increased from 9.2 to 11.5 GHz due to an increase in output optical losses, while the modulation bandwidth at 85°C does not exceed 8.5 GHz, depends weakly on the output optical losses, and is mainly limited by the optical-gain saturation.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Design, fabrication, and analysis of p-channel arsenide/antimonide hetero-junction tunnel transistors

In this paper, we demonstrate InAs/GaSb hetero-junction (hetJ) and GaSb homo-junction (homJ) p-channel tunneling field effect transistors (pTFET) employing a low temperature atomic layer deposited high-κ gate dielectric. HetJ pTFET exhibited drive current of 35 μA/μm in comparison to homJ pTFET, which exhibited drive current of 0.3 μA/μm at V{sub DS} = −0.5 V under DC biasing conditions. Additionally, with pulsing of 1 μs gate voltage, hetJ pTFET exhibited enhanced drive current of 85 μA/μm at V{sub DS} = −0.5 V, which is the highest reported in the category of III-V pTFET. Detailed device characterization was performed through analysis of the capacitance-voltage characteristics, pulsed current-voltage characteristics, and x-ray diffraction studies.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2015

Low-Dose Consolidation Radiation Therapy for Early Stage Unfavorable Hodgkin Lymphoma

Purpose: The German Hodgkin Study Group (GHSG) trial HD11 established 4 cycles of doxorubicin, bleomycin, vinblastine, and dacarbazine (ABVD) and 30 Gy of radiation therapy (RT) as a standard for early stage (I, II), unfavorable Hodgkin lymphoma (HL). Additional cycles of ABVD may allow for a reduction in RT dose and improved toxicity profile. Methods and Materials: Patients treated with combined modality therapy at the Duke Cancer Institute for early stage, unfavorable HL by GHSG criteria from 1994 to 2012 were included. Patients who did not undergo post-chemotherapy functional imaging (positron emission tomography or gallium imaging) or who failed to achieve a complete response were excluded. Clinical outcomes were estimated using the Kaplan-Meier method. Late effects were also evaluated. Results: A total of 90 patients met inclusion criteria for analysis. Median follow-up was 5 years. Chemotherapy consisted primarily of ABVD (88%) with a median number of 6 cycles. The median dose of consolidation RT was 23.4 Gy. Four patients had relapses, 2 of which were in-field. Ten-year progression-free survival (PFS) and overall survival (OS) were 93% (95% confidence interval [CI]: 0.82-0.97) and 98% (95% CI: 0.92-0.99), respectively. For the subset of patients (n=46) who received 5 to 6 cycles of chemotherapy and ≤24 Gy, the 10-year PFS and OS values were 88% (95% CI: 70%-96%) and 98% (95% CI: 85% - 99%), respectively. The most common late effect was hypothyroidism (20%) with no cardiac complications. Seven secondary malignancies were diagnosed, with only 1 arising within the RT field. Conclusions: Lower doses of RT may be sufficient when combined with more than 4 cycles of ABVD for early stage, unfavorable HL and may result in a more favorable toxicity profile than 4 cycles of ABVD and 30 Gy of RT.

62 RADIOLOGY AND NUCLEAR MEDICINE↗
DOE OSTI2015

p- to n-type conductivity transition in 1.0 eV GaInNAs solar cells controlled by the V/III ratio

In this work, we report a p- to n-type conductivity transition of GaInNAs (1.0 eV bandgap) layers in p-i-n dilute nitride solar cells continuously controlled by the V/III ratio during growth. Near the transition region, we were able to produce GaInNAs layers with very low effective electrically active doping concentrations resulting in wide depleted areas. We obtained internal quantum efficiencies (IQEs) up to 85% at 0.2 eV above the bandgap. However, the high IQE comes along with an increased dark current density resulting in a decreased open circuit voltage of about 0.2 V. This indicates the formation of non-radiant defect centers related to the p-type to n-type transition. Rapid-thermal annealing of the solar cells on the one hand helps to anneal some of these defects but on the other hand increases the effective doping concentrations.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Magnetoresistance in Mn ion-implanted GaAs:Zn nanowires

We have investigated the magnetoresistance (MR) in a series of Zn doped (p-type) GaAs nanowires implanted with different Mn concentrations. The nanowires with the lowest Mn concentration (∼0.0001%) exhibit a low resistance of a few kΩ at 300 K and a 4% positive MR at 1.6 K, which can be well described by invoking a spin-split subband model. In contrast, nanowires with the highest Mn concentration (4%) display a large resistance of several MΩ at 300 K and a large negative MR of 85% at 1.6 K. The large negative MR is interpreted in terms of spin-dependent hopping in a complex magnetic nanowire landscape of magnetic polarons, separated by intermediate regions of Mn impurity spins. Sweeping the magnetic field back and forth for the 4% sample reveals a hysteresis that indicates the presence of a weak ferromagnetic phase. We propose co-doping with Zn to be a promising way to reach the goal of realizing ferromagnetic Ga{sub 1−x}Mn{sub x}As nanowires for future nanospintronics.

36 MATERIALS SCIENCE↗