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The evaluators present in this publication spectroscopic data and level schemes from radioactive decay and nuclear reactions studies for all isobars with mass number A=65. Not much is known experimentally about {sup 65}V and {sup 65}Cr, although they are expected to decay by {beta}-emission. Spin/parity assignments for {sup 65}Mn, {sup 65}Fe, {sup 65}As, and {sup 65}Se are not firmly established.
Purpose: While consolidation radiation therapy (i.e., RT administered after chemotherapy) is routine treatment for patients with early-stage diffuse large B-cell lymphoma (DLBCL), the role of consolidation RT in stage III-IV DLBCL is controversial. Methods and Materials: Cases of patients with stage III-IV DLBCL treated from 1991 to 2009 at Duke University, who achieved a complete response to chemotherapy were reviewed. Clinical outcomes were calculated using the Kaplan-Meier method and were compared between patients who did and did not receive RT, using the log-rank test. A multivariate analysis was performed using Cox proportional hazards model. Results: Seventy-nine patients were identified. Chemotherapy (median, 6 cycles) consisted of anti-CD20 antibody rituximab combined with cyclophosphamide, doxorubicin, vincristine, and prednisone (R-CHOP; 65%); cyclophosphamide, doxorubicin, vincristine, and prednisone (CHOP; 22%); or other (13%). Post-chemotherapy imaging consisted of positron emission tomography (PET)/computed tomography (CT) (73%); gallium with CT (14%); or CT only (13%). Consolidation RT (median, 25 Gy) was given to involved sites of disease in 38 (48%) patients. Receipt of consolidation RT was associated with improved in-field control (92% vs. 69%, respectively, p = 0.028) and event-free survival (85% vs. 65%, respectively, p = 0.014) but no difference in overall survival (85% vs. 78%, respectively, p = 0.15) when compared to patients who did not receive consolidation RT. On multivariate analysis, no RT was predictive of increased risk of in-field failure (hazard ratio [HR], 8.01, p = 0.014) and worse event-free survival (HR, 4.3, p = 0.014). Conclusions: Patients with stage III-IV DLBCL who achieve negative post-chemotherapy imaging have improved in-field control and event-free survival with low-dose consolidation RT.
We demonstrate back channel improvement of back-channel-etch amorphous-indium-gallium-zinc-oxide (a-IGZO) thin-film transistors by using solution-processed yttrium oxide (Y{sub 2}O{sub 3}) passivation. Two different solvents, which are acetonitrile (35%) + ethylene glycol (65%), solvent A and deionized water, solvent B are investigated for the spin-on process of the Y{sub 2}O{sub 3} passivation—performed after patterning source/drain (S/D) Mo electrodes by a conventional HNO{sub 3}-based wet-etch process. Both solvents yield devices with good performance but those passivated by using solvent B exhibit better light and bias stability. Presence of yttrium at the a-IGZO back interface, where it occupies metal vacancy sites, is confirmed by X-ray photoelectron spectroscopy. The passivation effect of yttrium is more significant when solvent A is used because of the existence of more metal vacancies, given that the alcohol (65% ethylene glycol) in solvent A may dissolve the metal oxide (a-IGZO) through the formation of alkoxides and water.
Microfabrication techniques are critical for the rapid prototyping and development of applications for cutting edge materials. Recently diamond has gained considerable interest for quantum photonic, biosensing, inertial confinement fusion and magnetometer applications. In this article, ultra-high aspect ratio milling of diamond micropores by photon, ion and electron based methods is reported. A multiphoton absorption laser ablation approach is revealed to rapidly produce sub-10 μm diameter micropores in diamond with an aspect ratio of 14:1 and a tapered profile at the surface interface. Chemically active, oxygen focused ion beam milling produces high-aspect ratio pores in diamond with an aspect ratio of 65:1 and minimal tapering over the length of the pore, overcoming the physical interaction volume limitations imposed in conventional gallium based focused ion beam milling and laser ablation methods. Oxygen-mediated electron beam induced etching is revealed to negate the limitations imposed by physical sputtering mechanisms utilized in focused ion beam milling via the direct initiation of chemical reactions at the receding surface, producing aspect ratios on the order of 200:1. Numerical simulations reveal the physical basis for the superior aspect-ratio pore milling of the oxygen focused ion beam milling and electron beam induced etching methods. Our results demonstrate direct-write methods for the fabrication of ultra-high aspect micropores in diamond and provide insight into the underlying mechanisms of these physical processes. The three methods demonstrated here can be interchanged for applications based on the desired characteristic aspect ratio and process throughput.
The significant features of a series of stabilization experiments conducted at the National Renewable Energy Laboratory (NREL) between May 2009 and the present are reported. These experiments evaluated a procedure to stabilize the measured performance of thin-film polycrystalline cadmium telluride (CdTe) and copper indium gallium diselenide (CIGS) thin-film photovoltaic (PV) modules. Thecurrent-voltage (I-V) characteristics of CdTe and CIGS thin-film PV devices and modules exhibit transitory changes in electrical performance after thermal exposure in the dark and/or bias and light exposures. We present the results of our case studies of module performance versus exposure: light-soaked at 65 degrees C; exposed in the dark under forward bias at 65 degrees C; and, finally,longer-term outdoor exposure. We find that stabilization can be achieved to varying degrees using either light-soaking or dark bias methods and that the existing IEC 61646 light-soaking interval may be appropriate for CdTe and CIGS modules with one caveat: it is likely that at least three exposure intervals are required for stabilization.
The possibility of the BEST experiment on electron neutrino disappearance with intense artificial sources of electron neutrino {sup 51}Cr is considered. BEST has the great potential to search for transitions of active neutrinos to sterile states with Δm{sup 2} ∼ 1 eV{sup 2} and to set the limits on short baseline electron neutrino disappearance oscillation parameters. The possibility of the further constraints the oscillation parameters region with using {sup 65}Zn source is discussed.
Etching in wide-bandgap semiconductors such as GaN aids applications including transistors, sensors, and radioisotope batteries. Plasma-based etching can induce surface damage and contamination that is detrimental to device performance. Here, the present a photoelectrochemical approach to etching n -type GaN ( n -GaN) that is low-cost, simple, and environmentally benign compared to plasma approaches, with the potential for highly anisotropic etching that avoids material damage. n -GaN was etched in a dilute KOH solution with K 2 S 2 O 8 oxidizer, ultraviolet (UV) irradiation, and a catalytic metal mask which served as both photomask and counter electrode. Relatively smooth, highly anisotropic, non-defect-selective etching was achieved at rates in excess of 200 nm/min when etching at 65°C. The obstacle of bath acidification was circumvented using the addition of buffering salts to the etchant bath, substantially extending the etchant bath lifetime and etching depth achievable in a single, uninterrupted etch. These results represent a major step toward a scalable, device-ready electrochemical etch for vertical GaN structures and devices.
Bilayer films consisting of Ga-doped ZnO (GZO) and Cu layers were grown at room temperature by magnetron sputtering. The structural, electrical, and optical properties of GZO/Cu bilayer films were investigated in detail. The crystallinity and transparent-conductive properties of the films were correlated with the Cu layer thickness. The GZO/Cu bilayer film with the Cu layer thickness of 7.8 nm exhibited a low resistivity of 7.6x10{sup -5} {Omega} cm and an average visible transmittance of 74%. The reflectance was up to 65% in the near-infrared region for this film. The transparent conductive and near-infrared reflective GZO/Cu bilayer films could be readily deposited at room temperature. The GZO/Cu bilayer films were thermally stable when annealed at temperatures as high as 500 deg. C.
GaAs Schottky barrier detectors for α particle spectrometry have been tested. Detectors had an input window area of 80 mm{sup 2} and a working barrier layer thickness of 40–50 μm. The energy resolution (FWHM) measured on 5.499 MeV α line of {sup 238}Pu source amounted to 17.5 keV at a generator peak width of 7.8 keV. In the measurements on a {sup 226}Ra source, detectors showed linear response and nearly 100% charge collection efficiency at reverse bias above 65 V for all energies of α particles emitted from the source. Tests for thermal stability showed that the proposed detectors can be used in alpha-spectrometry of radionuclides at temperatures up to 120°C.
We report on the identification of a deep level trap centre which contributes to generation-recombination noise. A n-GaN epilayer, grown by MOCVD on sapphire, was measured by deep level transient spectroscopy (DLTS) and noise spectroscopy. DLTS found 3 well documented deep levels at E{sub c} − 0.26 eV, E{sub c} − 0.59 eV, and E{sub c} − 0.71 eV. The noise spectroscopy identified a generation recombination centre at E{sub c} − 0.65 ± 0.1 eV with a recombination lifetime of 65 μs at 300 K. This level is considered to be the same as the one at E{sub c} − 0.59 eV measured from DLTS, as they have similar trap densities and capture cross section. This result shows that some deep levels contribute to noise generation in GaN materials.
Photovoltaic (PV)-generated electricity can participate in renewable grid parity after meeting conditions of low-cost PV materials and economic manufacturing of solar cells. In this paper, we report low-cost, scalable microbial synthesis of Cu(In,Ga)Se 2 (CIGSe) and Cu(In,Ga)S 2 (CIGS), which are among the promising candidates to serve as light absorbing layers in solar panels. Microbial synthesis uses reducible chalcophiles and empirically stoichiometric metal components to produce CIGSe and CIGS with band gaps and intra- and intercrystallite compositional homogeneity similar to that produced with traditional techniques. Importantly, microbially produced photovoltaic materials described herein use inexpensive precursor materials at moderate temperatures (65 °C). The microbially facilitated processes do not utilize high temperature, vacuum, or toxic organic solvents. The potential to upscale microbial synthesis without loss of material quality is demonstrated here, indicating a high potential for industrial applications of this technology for production of nanomaterials for PV applications. We estimate that a 50 000 gallon fermentor could generate about 100 kg/month of CIGSe nanoparticles, which could be processed into 0.2 MW of PV cells.
In this study, the effect of substrate orientation on the structural properties of GaAs nanowires grown by a metal organic chemical vapor deposition has been investigated. Gold colloids were used as catalyst to initiate the growth of nanowiresby the vapour-liquid-solid (VLS) mechanism. From the field-emission scanning electron microscopy (FE-SEM), the growth of the nanowires were at an elevation angle of 90°, 60°, 65° and 35° with respect to the GaAs substrate for (111)B, (311)B, (110) and (100) orientations respectively. The preferential NW growth direction is always <111>B. High-resolution transmission electron microscope (HRTEM) micrograph showed the NWs that grew on the GaAs(111)B has more structural defects when compared to others. Energy dispersive X-ray analysis (EDX) indicated the presence of Au, Ga and As. The bigger diameter NWs dominates the (111)B substrate surface.
Highly conductive thin films of ZnO doped with Ga were grown by pulsed-laser deposition (PLD) with 10 mTorr of H2 in the growth chamber. Compared with a more conventional method of producing conductive films of ZnO, i.e., growth in O2 followed by annealing in forming gas (5% H2 in Ar), the H2 method requires no post-growth anneal and also produces higher carrier concentrations and lower resistivities with better depth uniformity. As an example, a 65-nm-thick sample had a room-temperature mobility of 32 cm2/V-s, a concentration of 6.8 x 1020 cm-3, and a resistivity of 2.9 x 10^-4 ohm-cm. From a scattering model, the donor and acceptor concentrations were calculated as 8.9 x 1020 and 2.1 x 10^20 cm-3, respectively, as compared to the Ga and H concentrations of 11 x 10^20 and 1 x 10^20 cm-3. Thus, H does not play a significant role as a donor in this type of ZnO
Optical to electrical power converting semiconductor devices were achieved with breakthrough performance by designing a Vertical Epitaxial Heterostructure Architecture. The devices are featuring modeled and measured conversion efficiencies greater than 65%. The ultrahigh conversion efficiencies were obtained by monolithically integrating several thin GaAs photovoltaic junctions tailored with submicron absorption thicknesses and grown in a single crystal by epitaxy. The heterostructures that were engineered with a number N of such ultrathin junctions yielded an optimal external quantum efficiencies approaching 100%/N. The heterostructures are capable of output voltages that are multiple times larger than the corresponding photovoltage of the input light. The individual nanoscale junctions are each generating up to ∼1.2 V of output voltage when illuminated in the infrared. We compare the optoelectronic properties of phototransducers prepared with designs having 5 to 12 junctions and that are exhibiting voltage outputs between >5 V and >14 V.
Surface optical (SO) phonons were studied by Raman spectroscopy in GaAs nanowires (NWs) grown by Ga-assisted chemical beam epitaxy on oxidized Si(111) substrates. NW diameters and lengths ranging between 40 and 65 nm and between 0.3 and 1.3 μm, respectively, were observed under different growth conditions. The analysis of the Raman peak shape associated to either longitudinal or surface optical modes gave important information about the crystal quality of grown NWs. Phonon confinement model was used to calculate the density of defects as a function of the NW diameter resulting in values between 0.02 and 0.03 defects/nm, indicating the high uniformity obtained on NWs cross section size during growth. SO mode shows frequency downshifting as NW diameter decreases, this shift being sensitive to NW sidewall oxidation. The wavevector necessary to activate SO phonon was used to estimate the NW facet roughness responsible for SO shift.
After successful demonstration of GaAs nanowire (NW) epitaxial growth on indium tin oxide (ITO) by metal organic chemical vapor deposition, we systematically investigate the effect of growth parameters' effect on the GaAs NW, including temperature, precursor molar flow rates, growth time, and Au catalyst size. 40 nm induced GaAs NWs are observed with zinc-blende structure. Based on vapor-liquid-solid mechanism, a kinetic model is used to deepen our understanding of the incorporation of growth species and the role of various growth parameters in tuning the GaAs NW growth rate. Thermally activated behavior has been investigated by variation of growth temperature. Activation energies of 40 nm Au catalyst induced NWs are calculated at different trimethylgallium (TMGa) molar flow rates about 65 kJ/mol. The GaAs NWs growth rates increase with TMGa molar flow rates whereas the growth rates are almost independent of growth time. Due to Gibbs-Thomson effect, the GaAs NW growth rates increase with Au nanoparticle size at different temperatures. Critical radius is calculated as 2.14 nm at the growth condition of 430 °C and 1.36 μmol/s TMGa flow rate. It is also proved experimentally that Au nanoparticle below the critical radius such as 2 nm cannot initiate the growth of NWs on ITO. This theoretical and experimental growth parameters investigation enables great controllability over GaAs NWs grown on transparent conductive substrate where the methodology can be expanded to other III–V material NWs and is critical for potential hybrid solar cell application.
Avalanche photodiodes (APDs) have been fabricated in order to determine the impact ionization coefficients of electrons (α) and holes (β) in Al{sub x}Ga{sub 1−x}As{sub y}Sb{sub 1−y} lattice matched to GaSb for three alloy compositions: (x = 0.40, y = 0.035), (x = 0.55, y = 0.045), and (x = 0. 65, y = 0.054). The impact ionization coefficients were calculated from photomultiplication measurements made on specially designed APDs, which allowed for both pure electron and pure hole injection in the same device. Photo-multiplication measurements were made at temperatures ranging from 77 K to 300 K for all three alloys. A quasi-physical model with an explicit temperature dependence was used to express the impact ionization coefficients as a function of electric-field strength and temperature. For all three alloys, it was found that α < β at any given temperature. In addition, the values of the impact ionization coefficients were found to decrease as the aluminum concentration of the AlGaAsSb alloy was increased. A value between 1.2 and 4.0 was found for β/α, which is dependent on temperature, alloy composition, and electric-field strength.
Photon management has been shown to be a fruitful way to boost the open circuit voltage and efficiency of high quality solar cells. Metal or low-index dielectric-based back reflectors can be used to confine the reemitted photons and enhance photon recycling. Gaining access to the back of the solar cell for placing these reflectors implies having to remove the substrate, with the associated added complexity to the solar cell manufacturing. In this work, we analyze the effectiveness of a single-layer reflector placed at the back of on-substrate solar cells, and assess the photon recycling improvement as a function of the refractive index of this layer. Al{sub 2}O{sub 3}-based reflectors, created by lateral oxidation of an AlAs layer, are identified as a feasible choice for on-substrate solar cells, which can produce a V{sub oc} increase of around 65% of the maximum increase attainable with an ideal reflector. The experimental results obtained using prototype GaAs cell structures show a greater than two-fold increase in the external radiative efficiency and a V{sub oc} increase of ∼2% (∼18 mV), consistent with theoretical calculations. For GaAs cells with higher internal luminescence, this V{sub oc} boost is calculated to be up to 4% relative (36 mV), which directly translates into at least 4% higher relative efficiency.