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Results for “GALLIUM 59”

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12 records
All sourcesNASA NTRSDOE OSTI
DOE OSTI2018

Nuclear Data Sheets for A=59☆

-- Abstract: Evaluated spectroscopic data and level schemes from radioactive decay and nuclear reaction studies are presented for {sup 59}Sc, {sup 59}Ti, {sup 59}V, {sup 59}Cr, {sup 59}Mn, {sup 59}Fe, {sup 59}Co, {sup 59}Ni, {sup 59}Cu, {sup 59}Zn, {sup 59}Ga, and {sup 59}Ge. This evaluation for A=59 supersedes the earlier one by C. M. Baglin (2002Ba42) and updates for some nuclides in the ENSDF database. Highlights: of this evaluation are the following: In {sup 59}Fe, a new level at 568.45 keV (3/2{sup −}) has been added. This resolves a doublet at 570 keV, which was reflected in earlier evaluations (1983An22, 1993Ba85, 2002Ba42) and literature as well. Conflicting spin assignments for 2153.62 keV level of {sup 59}Co [9/2,13/2 in (α,pγ); (13/2) in ({sup 15}N,4nγ); 15/2 in (p,p′γ), (7/2{sup −}) in (n,n′γ)] exist in the literature and additional experimental work is needed to resolve the issue.

73 NUCLEAR PHYSICS AND RADIATION PHYSICS↗
DOE OSTI2012

Toward Active-Matrix Lab-On-A-Chip: Programmable Electrofluidic control Enaled by Arrayed Oxide Thin Film Transistors

Agile micro- and nano-fluidic control is critical to numerous life science and chemical science synthesis as well as kinetic and thermodynamic studies. To this end, we have demonstrated the use of thin film transistor arrays as an active matrix addressing method to control an electrofluidic array. Because the active matrix method minimizes the number of control lines necessary (m + n lines for the m x n element array), the active matrix addressing method integrated with an electrofluidic platform can be a significant breakthrough for complex electrofluidic arrays (increased size or resolution) with enhanced function, agility and programmability. An amorphous indium gallium zinc oxide (a-IGZO) semiconductor active layer is used because of its high mobility of 1-15 cm{sup 2} V{sup -1} s{sup -1}, low-temperature processing and transparency for potential spectroscopy and imaging. Several electrofluidic functionalities are demonstrated using a simple 2 x 5 electrode array connected to a 2 x 5 IGZO thin film transistor array with the semiconductor channel width of 50 {mu}m and mobility of 6.3 cm{sup 2} V{sup -1} s{sup -1}. Additionally, using the TFT device characteristics, active matrix addressing schemes are discussed as the geometry of the electrode array can be tailored to act as a storage capacitor element. Finally, requisite material and device parameters are discussed in context with a VGA scale active matrix addressed electrofluidic platform.

59 BASIC BIOLOGICAL SCIENCES↗
DOE OSTI2013

Steady State Sputtering Yield and Surface Compositions of Depleted Uranium and Uranium Carbide bombarded by 16 and 30 keV Gallium or 16 keV Cesium Ions.

Depleted uranium that included carbide precipitates was sputtered with 30keV gallium ions or 16kev cesium ions to depths much greater than the ions’ range, i.e. using steady state sputtering. The recession of both the uranium’s and uranium carbide’s surfaces and the corresponding ion fluences were used to determine the steady state target sputtering yields of both uranium and uranium carbide. 6.3 and 6.02 atoms of uranium versus 2.4 and 1.45 units of uranium carbide were sputtered per gallium ion at 30 kV and 16 kV, respectively. 9.9 uranium atoms and 3.65 units of uranium carbide sputtered per cesium ion at 16 kV. The measured steady state sputtering coefficients for Ga at 30 keV and Cs at 16 keV are close to, but smaller than calculated sputtering coefficients for pure uranium. The steady state surface composition resulting from the simultaneous gallium or cesium implantation and sputter-erosion of uranium and uranium carbide were calculated to be U86Ga14, (UC) 70 Ga 30 and U 86 Ga 14 , (UC) 59 Ga 41 for Ga at 30keV and 16keV, respectively, and U 81 Cs 9 , (UC) 78 Cs 22 for Cesium at 16 keV,

36 MATERIALS SCIENCE↗
DOE OSTI2014

Stress-induced piezoelectric field in GaN-based 450-nm light-emitting diodes

We investigated the influence of the built-in piezoelectric field induced by compressive stress on the characteristics of GaN-based 450-nm light-emitting diodes (LEDs) prepared on sapphire substrates of different thicknesses. As the sapphire substrate thickness was reduced, the compressive stress in the GaN layer was released, resulting in wafer bowing. The wafer bowing-induced mechanical stress altered the piezoelectric field, which in turn reduced the quantum confined Stark effect in the InGaN/GaN active region of the LED. The flat-band voltage was estimated by measuring the applied bias voltage that induced a 180° phase shift in the electro-reflectance (ER) spectrum. The piezoelectric field estimated by the ER spectra changed by ∼110 kV/cm. The electroluminescence spectral peak wavelength was blue-shifted, and the internal quantum efficiency was improved by about 22% at a high injection current of 100 mA. The LED on the 60-μm-thick sapphire substrate exhibited the highest light output power of ∼59 mW at an injection current of 100 mA, with the operating voltage unchanged.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2013

Curved focusing crystals for hard X-ray astronomy

A lens made by a properly arranged array of crystals can be used to focus x-rays of energy ranging from 30 to 500 keV for x-ray astronomy. Mosaic or curved crystals can be employed as x-ray optical elements. In this work self standing curved focusing Si and GaAs crystals in which the lattice bending is induced by a controlled damaging process on one side of planar crystals are characterized. Diffraction profiles in Laue geometry have been measured in crystals at x-ray energies E = 17, 59 and 120 keV. An enhancement of diffraction efficiency is found in asymmetric geometries.

36 MATERIALS SCIENCE↗
DOE OSTI2011

GaN directional couplers for integrated quantum photonics

Large cross-section GaN waveguides are proposed as a suitable architecture to achieve integrated quantum photonic circuits. Directional couplers with this geometry have been designed with aid of the beam propagation method and fabricated using inductively coupled plasma etching. Scanning electron microscopy inspection shows high quality facets for end coupling and a well defined gap between rib pairs in the coupling region. Optical characterization at 800 nm shows single-mode operation and coupling-length-dependent splitting ratios. Two photon interference of degenerate photon pairs has been observed in the directional coupler by measurement of the Hong-Ou-Mandel dip [C. K. Hong, et al., Phys. Rev. Lett. 59, 2044 (1987)] with 96% visibility.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2018

Method of microbially producing metal gallate spinel nano-objects, and compositions produced thereby

A method of forming a metal gallate spinel structure that includes mixing a divalent metal-containing salt and a gallium-containing salt in solution with fermentative or thermophilic bacteria. In the process, the bacteria nucleate metal gallate spinel nano-objects from the divalent metal-containing salt and the gallium-containing salt without requiring reduction of a metal in the solution. The metal gallate spinel structures, as well as light-emitting structures in which they are incorporated, are also described.

36 MATERIALS SCIENCE↗
DOE OSTI2014

Experimental and theoretical identification of a high-pressure polymorph of Ga{sub 2}S{sub 3} with α-Bi{sub 2}Te{sub 3}-type structure

Since the discovery of α-phase Bi{sub 2}Te{sub 3}, Sb{sub 2}Te{sub 3}, and Bi{sub 2}Se{sub 3} as 3D topological insulators, many experimental and theoretical studies of A{sub 2}B{sub 3}-type chalcogenides have been performed to search for new materials with interesting elastic and electric properties at ambient and extreme conditions. In this study, high-pressure properties of Ga{sub 2}S{sub 3} have been characterized by in situ synchrotron X-ray diffraction (XRD), X-ray absorption near edge structure measurements, and Density-functional theory (DFT) calculations. At ∼16.0 GPa, a phase transition of α′-Ga{sub 2}S{sub 3} (Cc and Z = 4) is observed experimentally to a new polymorph, which is indentified to be the tetradymite-type or α-Bi{sub 2}Te{sub 3}-type crystal structure (R3{sup ¯}m and Z = 3) by laser-annealing XRD experiments and DFT calculations. The isothermal pressure-volume relationship of Ga{sub 2}S{sub 3} is well described by the second-order Birch-Murnaghan equation of state with K{sub 0} = 59(2) GPa and K{sub 0}{sup ′} = 4 (fixed) for the α′-Ga{sub 2}S{sub 3}, and K{sub 0} = 91(3) GPa, and K{sub 0}{sup ′} = 4 (fixed) for the tetradymite-type phase. In addition, band gap of α′-Ga{sub 2}S{sub 3} decreases on compression and the tetradymite-type Ga{sub 2}S{sub 3} exhibits metallization based on DFT calculations. The pressure-induced phase transition accompanying by changes of elastic and electrical properties may give some implications to other chalcogenides under high pressure.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2020

Mass measurements of neutron-rich gallium isotopes refine production of nuclei of the first r -process abundance peak in neutron-star merger calculations

We report mass measurements of neutron-rich Ga isotopes 80–85 Ga with TRIUMF's Ion Trap for Atomic and Nuclear science. The measurements determine the masses of 80–83 Ga in good agreement with previous measurements. Here, the masses of 84 Ga and 85 Ga were measured for the first time. Uncertainties between 25 and 48 keV were reached. The new mass values reduce the nuclear uncertainties associated with the production of A ≈ 84 isotopes by the r-process for astrophysical conditions that might be consistent with a binary neutron star (BNS) merger producing a blue kilonova. Our nucleosynthesis simulations confirm that BNS merger may contribute to the first abundance peak under moderate neutron-rich conditions with electron fractions Y e = 0.35–0.38.

59 ≤ A ≤ 89↗
DOE OSTI2016

Lattice damage and compositional changes in Xe ion irradiated In{sub x}Ga{sub 1-x}N (x = 0.32−1.0) single crystals

Lattice disorder and compositional changes in In{sub x}Ga{sub 1-x}N (x = 0.32, 0.47, 0.7, 0.8, and 1.0) films on GaN/Al{sub 2}O{sub 3} substrates, induced by room-temperature irradiation of 5 MeV Xe ions, have been investigated using both Rutherford backscattering spectrometry under ion-channeling conditions and time-of-flight secondary ion mass spectrometry. The results show that for a fluence of 3 × 10{sup 13 }cm{sup −2}, the relative level of lattice disorder in In{sub x}Ga{sub 1-x}N increases monotonically from 59% to 90% with increasing indium concentration x from 0.32 to 0.7; a further increase in x up to 1.0 leads to little increase in the disorder level. In contrast to Ga-rich In{sub x}Ga{sub 1-x}N (x = 0.32 and 0.47), significant volume swelling of up to ∼25% accompanied with oxidation in In-rich In{sub x}Ga{sub 1-x}N (x = 0.7, 0.8, and 1.0) is observed. In addition, irradiation-induced atomic mixing occurs at the interface of In-rich In{sub x}Ga{sub 1-x}N and GaN. The results from this study indicate an extreme susceptibility of the high In-content In{sub x}Ga{sub 1-x}N to heavy-ion irradiation, and suggest that cautions must be exercised in applying ion-implantation techniques to these materials at room temperature. Further studies of the irradiation behavior at elevated temperatures are warranted.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2022

Half-life measurement of the 199-keV isomeric state in Ga 76

Background: Isomeric states in atomic nuclei are a sensitive probe of their underlying microscopic structure and can be used to study the evolution of shell structure far from stability. Recent studies have identified and provided detailed spectroscopy of isomers in neutron-rich nuclei with Z = 28-50. Isomeric states in the odd-odd gallium isotopes have been reported for all gallium isotopes from A = 72 to A = 80 with the exception of 76 Ga. Purpose: The purpose of this experiment was to observe short-lived isomeric states in the vicinity of 78 Ni. Methods: In-beam fragmentation of a 86 Kr primary beam at the National Superconducting Cyclotron Laboratory produced radioactive ions which were delivered to and deposited in a Ce Br 3 scintillator coupled to a position-sensitive photomultiplier tube. Beta-delayed γ rays were measured by ancillary HPGe clover and LaBr 3 detectors which surrounded the implantation detector. Results: The previously observed J π = 1 + , 199-keV level in 76 Ga, populated following the β decay of 76 Zn, was identified as isomeric with a half-life of 34(1) stat. (8) sys. ns. Shell-model calculations suggest this state is formed by the coupling of protons in negative-parity configurations to 1/2 - neutron configurations. Transition strengths assuming a ground-state spin of J = 2 and J = 3 were determined from the experimental data.

59 ≤ A ≤ 89↗