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At least 19 records

Fabrication of 3-D Photonic Band Gap Crystals Via Colloidal Self-Assembly

The behavior of photons in a Photonic Crystals, PCs, is like that of electrons in a semiconductor in that, it prohibits light propagation over a band of frequencies, called Photonic Band Gap, PBG. Photons cannot exist in these band gaps like the forbidden bands of electrons. Thus, PCs lend themselves as potential candidates for devices based on the gap phenomenon. The popular research on PCs stem from their ability to confine light with minimal losses. Large scale 3-D PCs with a PBG in the visible or near infra red region will make optical transistors and sharp bent optical fibers. Efforts are directed to use PCs for information processing and it is not long before we can have optical integrated circuits in the place of electronic ones.

Subramaniam, Girija↗

Optical Frequency Optimization of a High Intensity Laser Power Beaming System Utilizing VMJ Photovoltaic Cells

An effective form of wireless power transmission (WPT) has been developed to enable extended mission durations, increased coverage and added capabilities for both space and terrestrial applications that may benefit from optically delivered electrical energy. The high intensity laser power beaming (HILPB) system enables long range optical 'refueling" of electric platforms such as micro unmanned aerial vehicles (MUAV), airships, robotic exploration missions and spacecraft platforms. To further advance the HILPB technology, the focus of this investigation is to determine the optimal laser wavelength to be used with the HILPB receiver, which utilizes vertical multi-junction (VMJ) photovoltaic cells. Frequency optimization of the laser system is necessary in order to maximize the conversion efficiency at continuous high intensities, and thus increase the delivered power density of the HILPB system. Initial spectral characterizations of the device performed at the NASA Glenn Research Center (GRC) indicate the approximate range of peak optical-to-electrical conversion efficiencies, but these data sets represent transient conditions under lower levels of illumination. Extending these results to high levels of steady state illumination, with attention given to the compatibility of available commercial off-the-shelf semiconductor laser sources and atmospheric transmission constraints is the primary focus of this paper. Experimental hardware results utilizing high power continuous wave (CW) semiconductor lasers at four different operational frequencies near the indicated band gap of the photovoltaic VMJ cells are presented and discussed. In addition, the highest receiver power density achieved to date is demonstrated using a single photovoltaic VMJ cell, which provided an exceptionally high electrical output of 13.6 W/sq cm at an optical-to-electrical conversion efficiency of 24 percent. These results are very promising and scalable, as a potential 1.0 sq m HILPB receiver of similar construction would be able to generate 136 kW of electrical power under similar conditions.

Raible, Daniel E.↗

Temperature Evolution in Excitonic Absorptions of Cd(0.96)Zn(0.04) Materials

We report cryogenic optical properties of Cd(0.96)Zn(0.04)Te wafers that are used as substrate seed layers in HgCdTe focal-plane array detectors. These studies are motivated by the fact that the substrate optical properties influence the overall detector performance. The studies consist of measuring the sample frequency dependent transmittance (T) and reflectance (R) above and below the optical band-gap in the UV/Visible and infrared frequency ranges, and with temperature variation of the sample from 5 to 300 K. These measurements show that the optical gap near 1.49 eV at 300 K increases to 1.62 eV at 5 K. Finally, we observe sharp absorption peaks near this gap energy at low temperatures. The close proximity of these peaks to the optical transition threshold suggests that they originate from the creation of bound electron-hole pairs or excitons. The decay of these excitonic absorptions may contribute to a photoluminescence and transient background response of these back-illuminated HgCdTe CCD detectors.

Quijada, Manuel A.↗

Temperature Evolution of Excitonic Absorptions in Cd(1-x)Zn(x)Te Materials

The studies consist of measuring the frequency dependent transmittance (T) and reflectance (R) above and below the optical band-gap in the UV/Visible and infrared frequency ranges for Cd(l-x),Zn(x),Te materials for x=0 and x=0.04. Measurements were also done in the temperature range from 5 to 300 K. The results show that the optical gap near 1.49 eV at 300 K increases to 1.62 eV at 5 K. Finally, we observe sharp absorption peaks near this gap energy at low temperatures. The close proximity of these peaks to the optical transition threshold suggests that they originate from the creation of bound electron-hole pairs or excitons. The decay of these excitonic absorptions may contribute to a photoluminescence and transient background response of these back-illuminated HgCdTe CCD detectors.

Quijada, Manuel A.↗

Temperature-dependent optical properties of Cd(1-x),Zn(x),Te substitute material

In this study, we report cryogenic optical properties of Cd(l-x), Zn(x), Te wafers that are used as substrate seed layers in the manufacturing of HgCdTe focal-plane array detectors. These studies are motivated by the fact that the substrate optical properties influence the overall detector performance. The studies consist of measuring the substrate frequency dependent transmittance T(W) and reflectance R(W) above and below the optical band-gap in the UV/Visible and infrared frequency ranges, and with temperature variation of the sample from 5 to 300 K. Determination of the optical absorption from these measurements show that the optical absorption energy gap near 1.6 eV shows a substantial increase as the temperature is reduced from 300 to 5 K. Furthermore, we observe the presence of infrared-active optical phonons whose peak frequency shifts as the temperature of the sample is varied over the measured temperature range. The theoretical frequency dependent optical conductivity, with allowance for redistribution of spectral weight among the interband transition charge carriers, will be discussed.

Quijada, Manuel A.↗

A Low Noise NbTiN-Based 850 GHz SIS Receiver for the Caltech Submillimeter Observatory

We have developed a niobium titanium nitride (NbTiN) based superconductor- insulator-superconductor (SIS) receiver to cover the 350 micron atmospheric window. This frequency band lies entirely above the energy gap of niobium (700 GHz), a commonly used SIS superconductor. The instrument uses an open structure twin-slot SIS mixer that consists of two Nb/AlN/NbTiN tunnel junctions, NbTiN thin-film microstrip tuning elements, and a NbTiN ground plane. The optical configuration is very similar to the 850 GHz waveguide receiver that was installed at the Caltech Submillimeter Observatory (CSO) in 1997. To minimize front-end loss, we employed reflecting optics and a cooled beamsplitter at 4 K. The instrument has an uncorrected receiver noise temperature of 205K DSB at 800 GHz and 410K DSB at 900 GHz. The degradation in receiver sensitivity with frequency is primarily due to an increase in the mixer conversion loss, which is attributed to the mismatch between the SIS junction and the twin-slot antenna impedance. The overall system performance has been confirmed through its use at the telescope to detect a wealth of new spectroscopic lines.

Kooi, J. W.↗

'Diamondlike' carbon films - Optical absorption, dielectric properties, and hardness dependence on deposition parameters

An RF plasma deposition system was used to prepare amorphous 'diamondlike' carbon films. The source gases for the RF system include methane, ethylene, propane, and propylene, and the parameters varied were power, dc substrate bias, and postdeposition anneal temperature. Films were deposited on various substrates. The main diagnostics were optical absorption in the visible and in the infrared, admittance as a function of frequency, hardness, and Auger and ESCA spectroscopy. Band gap is found to depend strongly on RF power level and band gaps up to 2.7 eV and hardness up to 7 Mohs were found. There appears to be an inverse relationship between hardness and optical band gap.

Natarajan, V.↗

Optical evidence for the metallization of Xenon at 132(5) GPa

Xe has been compressed in a diamond-anvil cell to approximately 200 GPa. The metallization of Xe by band-gap closure was investigated by obtaining optical data in both the metallic and insulating states. In the metallic state, the pressure dependence of the plasma frequency was determined from absorption data fitted with a free-electron model. In the insulating state, the pressure dependence of the band gap was determined from absorption data fitted with an indirect-band-gap model. The optical data indicate that the insulator-to-metal transition in Xe occurs at 132(5) GPa.

Goettel, Kenneth A.↗

Properties of thin films for high temperature flow sensors

Requirements of material parameters of high temperature flow sensors are identified. Refractory metal silicides offer high temperature sensitivity and high frequency response and are stable up to 1000 C. Intrinsic semiconductors of high band gap are also considered as sensor elements. SiC and diamond are identified. Combined with substrates of low thermal and electrical conductivity, such as quartz or Al2O3, these materials meet several requirements of high sensitivity and frequency response. Film deposition and patterning techniques suitable for these materials are identified.

Albin, Sacharia↗

The signature of auroral kilometric radiation on Isis 1 ionograms

Auroral kilometric radiation (AKR) appears on the Isis 1 topside sounder ionograms as intense noise bands between the electron cyclotron frequency and 700 kHz. A variable gap occurs between the cyclotron frequency and the lowest AKR frequency. As Isis 1 traverses the source region, the gap narrows, and the AKR signals at higher frequencies weaken. This signature suggests that the AKR waves are generated directly in the extraordinary mode at frequencies just above the local cutoff frequency and that the radiation is initially perpendicular to the magnetic field.

Calvert, W.↗

An experimental investigation of high temperature superconducting microstrip antennas at K- and Ka-band frequencies

The recent discovery of high temperature superconductors (HTS) has generated a substantial amount of interest in microstrip antenna applications. However, the high permittivity of substrates compatible with HTS results in narrow bandwidths and high patch edge impedances of such antennas. To investigate the performance of superconducting microstrip antennas, three antenna architectures at K and Ka-band frequencies are examined. Superconducting microstrip antennas that are directly coupled, gap coupled, and electromagnetically coupled to a microstrip transmission line were designed and fabricated on lanthanum aluminate substrates using YBa2Cu3O7 superconducting thin films. For each architecture, a single patch antenna and a four element array were fabricated. Measurements from these antennas, including input impedance, bandwidth, patterns, efficiency, and gain are presented. The measured results show usable antennas can be constructed using any of the architectures. All architectures show excellent gain characteristics, with less than 2 dB of total loss in the four element arrays. Although the direct and gap coupled antennas are the simplest antennas to design and fabricate, they suffer from narrow bandwidths. The electromagnetically coupled antenna, on the other hand, allows the flexibility of using a low permittivity substrate for the patch radiator, while using HTS for the feed network, thus increasing the bandwidth while effectively utilizing the low loss properties of HTS. Each antenna investigated in this research is the first of its kind reported.

Richard, Mark A.↗

Frequency band broadening of magnetospheric VLF emissions near the equator

The broadening of the whistler mode VLF emission band has frequently been observed by the equatorially orbiting S3-A (Explorer 45) satellite outside the midnight sector of the plasmasphere, during periods of geomagnetic disturbance. Prior to the broadening, the band of this emission is narrow with a sharp gap at the half electron gyrofrequency. The gradual broadening of the emission band on the low-frequency side is associated with the simultaneously observed spreading of the anisotropy of the ring current electrons to higher and wider energy ranges. Using the modeled distribution function, the linear growth rates of the cyclotron instability are calculated numerically. The results suggest that broadening of the VLF emission band near the plasmasphere can be caused by spreading of the ring current electron anisotropy toward higher energies.

Maeda, K.↗

A model for the spectral dependence of optically induced absorption in amorphous silicon

A model based on transitions from localized band tail states to states above the mobility edge is used to explain the broad band induced absorptions observed in recent pump-probe experiments. The model gives the observed decrease of absorption with frequency at subband gap photo energies and high carrier densities (of about 10 to the 20th/cu cm). At lower carrier densities, the absorption has a maximun which is sensitive to the spatial extent of the band tail states.

Lawandy, N. M.↗

A theory for chorus generation by energetic electrons during substorms

Previous observations during magnetospheric substorms reveal the existence of relatively narrow band electromagnetic emissions occurring slightly above and below one half of the electron cyclotron frequency in the equatorial magnetosphere beyond the plasmapause. Between these two bands of emission there exists a gap of much lower emission intensity. In this paper an interpretation is presented for these chorus observations wherein the lower emission band is represented by whistler noise and the upper emission band is described by the lowest harmonic of the ordinary mode. These emissions are assumed to be locally generated at the observation point. Both emission bands are excited by power law-distributed energetic electrons with a variable spectral index and a weak loss cone feature. The form of these energetic electrons is similar to the forms observed simultaneously with the chorus emissions. The calculated growth rates show a frequency distribution similar to that of the measured emissions. In addition, the same energetic electron distribution can also produce the electrostatic gyroharmonic emissions often seen by observers in conjunction with chorus emissions during substorms.

Curtis, S. A.↗

Visible light to electrical energy conversion using photoelectrochemical cells

Sustained conversion of low energy visible or near i.r. light (>1.25 eV) to electrical energy has been obtained using wet photoelectrochemical cells where there are no net chemical changes in the system. Stabilization of n-type semi-conductor anodes of CdS, CdSe, CdTe, GaP, GaAs and InP to photoanodic dissolution is achieved by employing selected alkaline solutions of Na.sub.2 S, Na.sub.2 S/S, Na.sub.2 Se, Na.sub.2 Se/Se, Na.sub.2 Te and Na.sub.2 Te/Te as the electrolyte. The oxidation of (poly) sulfide, (poly)selenide or (poly)telluride species occurs at the irradiated anode, and reduction of polysulfide, polyselenide or polytelluride species occurs at the dark Pt cathode of the photoelectrochemical cell. Optical to electrical energy conversion efficiencies approaching 15% at selected frequencies have been observed in some cells. The wavelength for the onset of photocurrent corresponds to the band gap of the particular anode material used in the cell.

Wrighton, Mark S.↗

Cryogenic 160-GHz MMIC Heterodyne Receiver Module

A cryogenic 160-GHz MMIC heterodyne receiver module has demonstrated a system noise temperature of 100 K or less at 166 GHz. This module builds upon work previously described in Development of a 150-GHz MMIC Module Prototype for Large-Scale CMB Radiation (NPO-47664), NASA Tech Briefs, Vol. 35, No. 8 (August 2011), p. 27. In the original module, the local oscillator signal was saturating the MMIC low-noise amplifiers (LNAs) with power. In order to suppress the local oscillator signal from reaching the MMIC LNAs, the W-band (75 110 GHz) signal had to be filtered out before reaching 140 170 GHz. A bandpass filter was developed to cover 120 170 GHz, using microstrip parallel-coupled lines to achieve the desired filter bandwidth, and ensure that the unwanted W-band local oscillator signal would be sufficiently suppressed. With the new bandpass filter, the entire receiver can work over the 140 180-GHz band, with a minimum system noise temperature of 460 K at 166 GHz. The module was tested cryogenically at 20 K ambient temperature, and it was found that the receiver had a noise temperature of 100 K over an 8-GHz bandwidth. The receiver module now includes a microstrip bandpass filter, which was designed to have a 3-dB bandwidth of approximately 120-170 GHz. The filter was fabricated on a 3-mil-thick alumina substrate. The filter design was based on a W-band filter design made at JPL and used in the QUIET (Q/U Imaging ExperimenT) radiometer modules. The W-band filter was scaled for a new center frequency of 150 GHz, and the microstrip segments were changed accordingly. Also, to decrease the bandwidth of the resulting scaled design, the center gaps between the microstrip lines were increased (by four micrometers in length) compared to the gaps near the edges. The use of the 150-GHz bandpass filter has enabled the receiver module to function well at room temperature. The system noise temperature was measured to be less than 600 K (at room temperature) from 154 to 168 GHz. Additionally, the use of a W-band isolator between the receiver module and the local oscillator source also improved the noise temperature substantially. This may be because the mixer was presented with a better impedance match with the use of the isolator. Cryogenic testing indicates a system noise temperature of 100 K or less at 166 GHz. Prior tests of the MMIC amplifiers alone have resulted in a system noise temperature of 65.70 K in the same frequency range (.160 GHz) when cooled to an ambient temperature of 20 K. While other detector systems may be slightly more sensitive (such as SIS mixers), they require more cooling (to 4 K ambient) and are not as easily scalable to build a large array, due to the need for large magnets and other equipment. When cooled to 20 K, this receiver module achieves approximately 100 K system noise temperature, which is slightly higher than single-amplifier module results obtained at JPL (65.70 K when an amplifier is corrected for back-end noise contributions). If this performance can be realized in practice, and a scalable array can be produced, the impact on cosmic microwave background experiments, astronomical and Earth spectroscopy, interferometry, and radio astronomy in general will be dramatic.

Samoska, Lorene A.↗

An analysis of the frequency limitations of an Al(x)Ga(1-x)As/GaAs optical modulator

An analysis is made of the frequency response of an Al(x)Ga(1-x)As/GaAs optical modulator operating at a wavelength of 0.83 micron and utilizing the linear-optic effect in a Mach-Zehnder configuration. It is shown that, in semiconductor modulators, electroabsorption should be taken into account in optimizing the frequency response of the device. It is also shown that, by incorporating an insulator (a semiconductor with a large band gap) between the metallic electrode and the channel, the capacitance of the electroabsorptive modulator can be kept low at a reasonable value under the worst conditions.

Tabib-Azar, M.↗

Effects of specimen preparation on the electromagnetic property measurements of solid materials with an automatic network analyzer

Effects of specimen preparation on measured values of an acrylic's electomagnetic properties at X-band microwave frequencies, TE sub 1,0 mode, utilizing an automatic network analyzer have been studied. For 1 percent or less error, a gap between the specimen edge and the 0.901-in. wall of the specimen holder was the most significant parameter. The gap had to be less than 0.002 in. The thickness variation and alignment errors in the direction parallel to the 0.901-in. wall were equally second most significant and had to be less than 1 degree. Errors in the measurement f the thickness were third most significant. They had to be less than 3 percent. The following parameters caused errors of 1 percent or less: ratios of specimen-holder thicknesses of more than 15 percent, gaps between the specimen edge and the 0.401-in. wall less than 0.045 in., position errors less than 15 percent, surface roughness, hickness variation in the direction parallel to the 0.401-in. wall less than 35 percent, and specimen alignment in the direction parallel to the 0.401-in. wall mass than 5 degrees.

Long, E. R., Jr.↗