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The satellite ferrimagnetic power limiter

To limit the 4080-mc local oscillator signal power input to the beat oscillator modulator of the Telstar satellite communications repeater, a subsidiary absorption limiter was used which consisted of an optically polished sphere of single-crystal yttrium iron garnet (YIG), placed in a resonant transmission cavity between the amplified 4080-mc output of the traveling-wave tube and the BO modulator input. The limiter holds the output power nearly constant above a given input threshold; below this threshold the YIG is linear and introduces only a small loss. The threshold is determined, for a given sample at a given frequency, by the external magnetic bias field. Temperature compensation over the desired range was obtained by orienting the crystal with the dc magnetic field along a [100] or “hard” axis. The total weight of the limiter package, including the bias magnet and cavity, is 13 ounces.

YTTRIUM-IRON GARNET /YIG/ CRYSTAL

Flux switching in multipath cores

Flux switching in multipath ferrimagnetic core materials - computational analyses for unloaded core, loaded core, core-diode-transistor binary counter, and loaded three-leg core

SWITCHING CIRCUIT

A high-density magneto-optic memory.

Magneto-optic memory element based on properties of ferrimagnetic garnet with compensation temperature, discussing reading optimization and laser beams intensity

Goldberg, N.

Investigation of chemical vapor deposition of garnet films for bubble domain memories

The important process parameters and control required to grow reproducible device quality ferrimagnetic films by chemical vapor deposition (CVD) were studied. The investigation of the critical parameters in the CVD growth process led to the conclusion that the required reproducibility of film properties cannot be achieved with individually controlled separate metal halide sources. Therefore, the CVD growth effort was directed toward replacement of the halide sources with metallic sources with the ultimate goal being the reproducible growth of complex garnet compositions utilizing a single metal alloy source. The characterization of the YGdGaIG films showed that certain characteristics of this material, primarily the low domain wall energy and the large temperature sensitivity, severely limited its potential as a useful material for bubble domain devices. Consequently, at the time of the change from halide to metallic sources, the target film compositions were shifted to more useful materials such as YGdTmGaIG, YEuGaIG and YSmGaIG.

Besser, P. J.

Magnetic heat pumping

A ferromagnetic or ferrimagnetic element is used to control the temperature and applied magnetic field of the element to cause the state of the element as represented on a temperature-magnetic entropy diagram to repeatedly traverse a loop. The loop may have a first portion of concurrent substantially isothermal or constant temperature and increasing applied magnetic field, a second portion of lowering temperature and constant applied magnetic field, a third portion of isothermal and decreasing applied magnetic field, and a fourth portion of increasing temperature and constant applied magnetic field. Other loops may be four-sided, with two isotherms and two adiabats. Preferably, a regenerator is used to enhance desired cooling or heating effects, with varied magnetic fields, or varying temperatures including three-sided figures traversed by the representative point.

Brown, G. V.

A solid state data recorder for spacecraft telemetry applications

A solid state data recorder (SSDR) has been developed which offers a high-reliability alternative to tape recorders in many spacecraft telemetry applications. The storage medium used in this recorder was ferrimagnetic garnet films supporting nonvolatile magnetic bubble domains. The recorder was designed using modular construction consisting of a digital control unit, power supply, and two memory modules. A prototype SSDR has been fabricated which is designed for 100-million bits of storage but was populated with 128 chips for a 13-million bit capacity. Preliminary tests indicate satisfactory operation.

Stermer, R. L., Jr.

Investigation of multilayer magnetic domain lattice file

A theoretical and experimental investigation determined that current accessed self structured bubble memory devices have the potential of meeting projected data density and speed requirements. Device concepts analyzed include multilayer ferrimagnetic devices where the top layer contains a domain structure which defines the data location and the second contains the data. Current aperture and permalloy assisted current propagation devices were evaluated. Based on the result of this work more detailed device research was initiated. Detailed theoretical and experimental studies indicate that the difference in strip and threshold between a single bubble in the control layer and a double bubble which would exist in both the control layer and data layer is adequate to allow for detection of data. Detailed detector designs were investigated.

Torok, E. J.

Directional solidification and annealing of Mn55Al45 alloys

The use of directional solidification to produce aligned or magnetic microstructures for the MnAl alloy and the effect of annealing on the bulk magnetic properties of the alloy are investigated. The phase composition, cylindrically shaped magnetization, and room-temperature magnetization of the samples are analyzed. The microstructure of a directionally solidified Al-Mn alloy is characterized by a two-phase structure consisting of randomly-oriented Al-rich fibers of about 40 at. pct Al dispersed in a textureless matrix of about 50 at. pct Al; the matrix phase contains at least 50 wt pct of the metastable and ferrimagnetic tau-phase, and the Al-rich fibers as a precipitated Cr5Al8-type Al-Mn phase. Significant macrosegregation for the thermally stable growth-up orientation is detected. The data reveal that the annealing enhances the cell-like microstructure observed transverse of the solidification direction and increases remanent magnetization and intrinsic coercivity.

Pirich, Ronald G.

Integrated, nonvolatile, high-speed analog random access memory

This invention provides an integrated, non-volatile, high-speed random access memory. A magnetically switchable ferromagnetic or ferrimagnetic layer is sandwiched between an electrical conductor which provides the ability to magnetize the magnetically switchable layer and a magneto resistive or Hall effect material which allows sensing the magnetic field which emanates from the magnetization of the magnetically switchable layer. By using this integrated three-layer form, the writing process, which is controlled by the conductor, is separated from the storage medium in the magnetic layer and from the readback process which is controlled by the magnetoresistive layer. A circuit for implementing the memory in CMOS or the like is disclosed.

Katti, Romney R.