Single Event Effect Testing of the SSDI SFF6661 N-Channel Power MOSFET
This irradiation campaign was performed to evaluate the destructive single event effect (SEE) susceptibility of a n-channel power MOSFET from SSDI for space-based instrumentation. Testing was performed at Michigan State University’s (MSU) Facility for Rate Isotope Beams (FRIB) using an LET of 50.5 MeV·cm 2 /mg
Landen D. Ryder↗