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Outstanding field emission properties of wet-processed titanium dioxide coated carbon nanotube based field emission devices
Field emission devices using a wet-processed composite cathode of carbon nanotube films coated with titanium dioxide exhibit outstanding field emission characteristics, including ultralow turn on field of 0.383 V μm{sup −1} and threshold field of 0.657 V μm{sup −1} corresponding with a very high field enhancement factor of 20 000, exceptional current stability, and excellent emission uniformity. The improved field emission properties are attributed to the enhanced edge effect simultaneously with the reduced screening effect, and the lowered work function of the composite cathode. In addition, the highly stable electron emission is found due to the presence of titanium dioxide nanoparticles on the carbon nanotubes, which prohibits the cathode from the influence of ions and free radical created in the emission process as well as residual oxygen gas in the device. The high-performance solution-processed composite cathode demonstrates great potential application in vacuum electronic devices.
Carbon nanotube field emission cathodes: connecting fabrication to field emission performance that enables alternative cathodes for RF sources
This project has characterized the bulk emission properties of carbon nanotube (CNT) forest cathodes fabricated with varied geometries. The overall goal of the project has been to evaluate CNT forest cathodes as a potential replacement for thermionic cathodes currently used in accelerator systems.
Probing the limits of Si:P δ -doped devices patterned by a scanning tunneling microscope in a field-emission mode
Recently, a single atom transistor was deterministically fabricated using phosphorus in Si by H-desorption lithography with a scanning tunneling microscope (STM). This milestone in precision, achieved by operating the STM in the conventional tunneling mode, typically utilizes slow (∼102 nm2/s) patterning speeds. By contrast, using the STM in a high-voltage (>10 V) field-emission mode, patterning speeds can be increased by orders of magnitude to ≳104 nm2/s. We show that the rapid patterning negligibly affects the functionality of relatively large micron-sized features, which act as contacting pads for these devices. For nanoscale structures, we show that the resulting electrical transport is consistent with the donor incorporation chemistry constraining the electrical dimensions to a scale of 10 nm even though the pattering spot size is 40 nm.
Tunnel Emission from Nanostructured Field-Emission Array Cathodes with a Fluorine–Carbon Coating
Variations of the morphology and field-emission properties of surface-structured n- and p-type silicon wafers have been studied. The silicon surface has been structured by etching in a fluorine–carbon plasma and depositing subnanodimensional island carbon masks. It has been shown that surface structuring in a fluorine–carbon plasma makes it possible to reach desired field-emission currents in electric fields of different strengths. Physicochemical models of field emission mechanisms and models of destruction of surface-modified multipoint silicon array cathodes have been considered.
Cryogenic operation of planar ultrananocrystalline diamond field emission source in SRF injector
Here, we report a demonstration of electron beam generation in a superconducting radio frequency (SRF) Teraelectronvolt Energy Superconducting Linear Accelerator 1.3 GHz gun equipped with a field emission cathode and operated at 2 K. The cathode is a submicrometer film of nitrogen-incorporated ultrananocrystalline diamond [(N)UNCD] deposited atop a Nb RRR300 cathode plug that is 4 mm in diameter. Measurements of the output current showed that it increased exponentially as a function of the gun gradient. Our results demonstrate a feasible path toward simplified fully cryogenic SRF injector technology. At a maximal gradient of 0.9 MV/m, a current density of 22 μA/cm2 was obtained [calculated as a 2.75 μA current over the total cathode surface area of π(2 mm)2]. One important finding is that the electron emitter made of (N)UNCD, a material long been known as a highly efficient field emission material, demonstrated a record low turn-on gradient of 0.6 MV/m. A hypothesis explaining this behavior is proposed.
Locally Resolved Electron Emission Area and Unified View of Field Emission from Ultrananocrystalline Diamond Films
One of the common problems in case of field emission from polycrystalline diamond films, which typically have uniform surface morphology, is uncertainty in determining exact location of electron emission sites across the surface. Although several studies have suggested that grain boundaries are the main electron emission source, it is not particularly clear what makes some sites emit more than the others. It is also practically unclear how one could quantify the actual electron emission area and therefore field emission current per unit area. In this paper we study the effect of actual, locally resolved, field emission (FE) area on electron emission characteristics of uniform planar highly conductive nitrogen-incorporated ultrananocrystalline diamond ((N)UNCD) field emitters. It was routinely found that field emission from as-grown planar (N)UNCD films is always confined to a counted number of discrete emitting centers across the surface which varied in size and electron emissivity. It was established that the actual FE area critically depends on the applied electric field, as well as that the actual FE area and the overall electron emissivity improve with sp2 fraction present in the film irrespectively of the original substrate roughness and morphology. To quantify the actual FE area and its dependence on the applied electric field, imaging experiments were carried out in a vacuum system in a parallel-plate configuration with a specialty anode phosphor screen. Electron emission micrographs were taken concurrently with I-V characteristics measurements. In addition, a novel automated image processing algorithm was developed to process extensive imaging datasets and calculate emission area per image. By doing so, it was determined that the emitting area was always significantly smaller than the FE cathode surface area. Namely, the actual FE area would change from 5×10-3 % to 1.5 % of the total cathode area with the applied electric field increased. Finally and most importantly, it was shown that when I-E curves as measured in the experiment were normalized by the field-dependent emission area, the resulting j-E curves demonstrated a strong kink and significant deviation from Fowler-Nordheim (FN) law, and eventually saturated at a current density of ~100 mA/cm2 . This value was nearly identical for all (N)UNCD films measured in this study, regardless of the substrate.
Proof of Concept Coded Aperture Miniature Mass Spectrometer Using a Cycloidal Sector Mass Analyzer, a Carbon Nanotube (CNT) Field Emission Electron Ionization Source, and an Array Detector
Despite many potential applications, miniature mass spectrometers have had limited adoption in the field due to the tradeoff between throughput and resolution that limits their performance relative to laboratory instruments. Recently, a solution to this tradeoff has been demonstrated by using spatially coded apertures in magnetic sector mass spectrometers, enabling throughput and signal-to-background improvements of greater than an order of magnitude with no loss of resolution. This paper describes a proof of concept demonstration of a cycloidal coded aperture miniature mass spectrometer (C-CAMMS) demonstrating use of spatially coded apertures in a cycloidal sector mass analyzer for the first time. C-CAMMS also incorporates a miniature carbon nanotube (CNT) field emission electron ionization source and a capacitive transimpedance amplifier (CTIA) ion array detector. Results confirm the cycloidal mass analyzer’s compatibility with aperture coding. A >10× increase in throughput was achieved without loss of resolution compared with a single slit instrument. Several areas where additional improvement can be realized are identified. .
Field emission behavior of carbon nanotube field emitters after high temperature thermal annealing
The carbon nanotube (CNT) field emitters have been fabricated by attaching a CNT film on a graphite rod using graphite adhesive material. The CNT field emitters showed much improved field emission properties due to increasing crystallinity and decreasing defects in CNTs after the high temperature thermal annealing at 900 °C in vacuum ambient. The CNT field emitters showed the low turn-on electric field of 1.15 V/μm, the low threshold electric field of 1.62 V/μm, and the high emission current of 5.9 mA which corresponds to a current density of 8.5 A/cm{sup 2}. In addition, the CNT field emitters indicated the enhanced field emission properties due to the multi-stage effect when the length of the graphite rod increases. The CNT field emitter showed good field emission stability after the high temperature thermal annealing. The CNT field emitter revealed a focused electron beam spot without any focusing electrodes and also showed good field emission repeatability.
Detailed Characterization of Surface Structure and Influence on Field Emission.
Abstract not provided.
Operation of an ungated diamond field-emission array cathode in a L-band radiofrequency electron source
We report on the operation of a field-emitter-array cathode in a conventional L-band radio-frequency electron source. The cathode consisted of an array of ∼10{sup 6} diamond tips on pyramids. Maximum current on the order of 15 mA was reached and the cathode did not show appreciable signs of fatigue after weeks of operation. The measured Fowler-Nordheim characteristics, transverse beam density, and current stability are discussed.
Using AI for Management of Field Emission in SRF Linacs
Field emission control, mitigation, and reduction is critical for reliable operation of high gradient superconducting radio-frequency (SRF) accelerators. With the SRF cavities at high gradients, the field emission of electrons from cavity walls can occur and will impact the operational gradient, radiological environment via activated components, and reliability of CEBAF’s two linacs. A new effort has started to minimize field emission in the CEBAF linacs by re-distributing cavity gradients. To measure radiation levels, newly designed neutron and gamma radiation dose rate monitors have been installed in both linacs. Artificial intelligence (AI) techniques will be used to identify cavities with high levels of field emission based on control system data such as radiation levels, cryogenic readbacks, and vacuum loads. The gradients on the most offending cavities will be reduced and compensated for by increasing the gradients on least offensive cavities. Training data will be collected during this year’s operational program and initial implementation of AI models will be deployed. Preliminary results and future plans are presented.
Using AI for Management of Field Emission in SRF Linacs
Field emission control, mitigation, and reduction is critical for reliable operation of high gradient superconducting radio-frequency (SRF) accelerators. With the SRF cavities at high gradients, the field emission of electrons from cavity walls can occur and will impact the operational gradient, radiological environment via activated components, and reliability of CEBAF’s two linacs. A new effort has started to minimize field emission in the CEBAF linacs by re-distributing cavity gradients. To measure radiation levels, newly designed neutron and gamma radiation dose rate monitors have been installed in both linacs. Artificial intelligence (AI) techniques will be used to identify cavities with high levels of field emission based on control system data such as radiation levels, cryogenic readbacks, and vacuum loads. The gradients on the most offending cavities will be reduced and compensated for by increasing the gradients on least offensive cavities. Training data will be collected during this year’s operational program and initial implementation of AI models will be deployed. Preliminary results and future plans are presented.
Experimental Development of Low-emittance Field-emission Electron Sources
Field emission electron sources are capable of extreme brightness when excited by static or time-dependent electro- magnetic fields. We are currently developing a cathode test stand operating in DC mode with possibility to trigger the emission using ultra-short (~ 100-fs) laser pulses. This contribution describes the status of an experiment to investigate field-emission using cathodes under development at NIU in collaboration with the Argonne’s Center for Nanoscale Materials.
Graphene field emission devices
Graphene field emission devices are fabricated using a scalable process. The field enhancement factors, determined from the Fowler-Nordheim plots, are within few hundreds and match the theoretical predictions. The devices show high emission current density of ∼10 nA μm{sup −1} at modest voltages of tens of volts. The emission is stable with time and repeatable over long term, whereas the noise in the emission current is comparable to that from individual carbon nanotubes emitting under similar conditions. We demonstrate a power law dependence of emission current on pressure which can be utilized for sensing. The excellent characteristics and relative ease of making the devices promise their great potential for sensing and electronic applications.
Field-Emission Electron Source Embedded in a Field-Enhanced Conduction-Cooled Superconducting RF Cavity
We present simulations and experimental progress toward the development of a high-current electron source with the potential to deliver high charge electron bunches at GHz-level repetition rates. To achieve these goals electrons are generated through field-emission and the cathode is immersed in a conduction-cooled superconducting 650-MHz RF cavity. The field-emitters consist of microscopic silicon pyramids and have a typical enhancement factor of about 500. To trigger field-emission, the peak field inside the RF cavity of about 6 MV/m is further enhanced by placing the field-emitters on the top of a superconducting Nb rod inserted in the RF cavity. So far, we cannot control the duration of the electron bunches which is of the order of RF period. Also, the present cryo-cooler power of about 2 W limits the beam current to microamp level.
Structural modification of nanocrystalline diamond films via positive/negative bias enhanced nucleation and growth processes for improving their electron field emission properties
Electron field emission (EFE) properties of nanocrystalline diamond (NCD) films synthesized by the bias-enhanced growth (beg) process under different bias voltages were investigated. The induction of the nanographitic phases is presumed to be the prime factor in enhancing the EFE properties of negative biased NCD films. Transmission electron microscopic investigations reveal that a negative bias voltage of −300 V increases the rate of growth for NCD films with the size of the grains changing from nano to ultranano size. This effect also is accompanied by the induction of nanographitic filaments in the grain boundaries of the films. The turn-on field (E{sub 0}) for the EFE process then effectively gets reduced. The EFE process of the beg-NCD{sub −300V} films can be turned on at E{sub 0} = 3.86 V/μm, and the EFE current density achieved is 1.49 mA/cm{sup 2} at an applied field of 7.85 V/μm. On the other hand, though a positive-bias beg process (+200 V) results in the reduction of grain size, it does not induce sufficient nanographitic phases to lower the E{sub 0} value of the EFE process. Moreover, the optical emission spectroscopic investigation indicates that one of the primary causes that changes the granular structure of the NCD films is the increase in the proportion of C{sub 2} and CH species induced in the growing plasma. The polarity of the bias voltage is of less importance in the microstructural evolution of the films.
Use of the Atomic Structure of Silicon Crystals to Obtain Multi-Tip Field-Emission Sources of Electrons
The field-emission properties of field electron sources produced using the atomic structure of silicon crystals, the heterophase vacuum-plasma self-organization of island carbon coatings, and highly anisotropic plasma-chemical etching under weak-adsorption conditions are studied. A correlation between the morphological and field-emission characteristics of field cathode microstructures on silicon crystals with various conductivity types is ascertained. The results of experimental studies are interpreted using the Fowler–Nordheim theory in conjunction with changes in the compositions of the surface phases formed in fabricating emitting silicon projections.