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Results for “FERROMAGNETIC RESONANCE”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 19 records
All sourcesNASA NTRSDOE OSTI
DOE OSTI2014

Ferromagnetic resonance of sputtered yttrium iron garnet nanometer films

Growth of nm-thick yttrium iron garnet (YIG) films by sputtering and ferromagnetic resonance (FMR) properties in the films were studied. The FMR linewidth of the YIG film decreased as the film thickness was increased from several nanometers to about 100 nm. For films with very smooth surfaces, the linewidth increased linearly with frequency. In contrast, for films with big grains on the surface, the linewidth-frequency response was strongly nonlinear. Films in the 7–26 nm thickness range showed a surface roughness between 0.1 nm and 0.4 nm, a 9.48-GHz FMR linewidth in the 6–10 Oe range, and a damping constant of about 0.001.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2015

Heat dissipation due to ferromagnetic resonance in a ferromagnetic metal monitored by electrical resistance measurement

The heat dissipation due to the resonant precessional motion of the magnetization in a ferromagnetic metal has been investigated. We demonstrated that the temperature during the ferromagnetic resonance can be simply detected by the electrical resistance measurement of the Cu strip line in contact with the ferromagnetic metal. The temperature change of the Cu strip due to the ferromagnetic resonance was found to exceed 10 K, which significantly affects the spin-current transport. The influence of the thermal conductivity of the substrate on the heating was also investigated.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2016

Ferromagnetic resonance of a YIG film in the low frequency regime

An improved method for characterizing the magnetic anisotropy of films with cubic symmetry is described and is applied to an yttrium iron garnet (111) film. Analysis of the ferromagnetic resonance (FMR) spectra performed both in-plane and out-of-plane from 0.7 to 8 GHz yielded the magnetic anisotropy constants as well as the saturation magnetization. The field at which FMR is observed turns out to be quite sensitive to anisotropy constants (by more than a factor ten) in the low frequency (<2 GHz) regime, and when the orientation of the magnetic field is nearly normal to the sample plane; the restoring force on the magnetization arising from the magnetocrystalline anisotropy fields is then comparable to that from the external field, thereby allowing the anisotropy constants to be determined with greater accuracy. In this region, unusual dynamical behaviors are observed such as multiple resonances and a switching of FMR resonance with only a 1° change in field orientation at 0.7 GHz.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2015

A rigorous two-dimensional model for the stripline ferromagnetic resonance response of metallic ferromagnetic films

In this work, we constructed a two-dimensional numerical model for calculation of the stripline ferromagnetic resonance (FMR) response of metallic ferromagnetic films. We also conducted numerical calculations by using this software. The calculations demonstrated that the eddy current contribution to the FMR response decreases with a decrease in the stripline width. The most important manifestations of the conductivity (eddy current) effect are excitation of the higher-order standing spin waves across the film thickness in the materials for which the standing spin wave peaks would be absent in cavity FMR measurements and strong dependence of the off-resonance series conductance of the stripline on the stripline width. Whereas the contribution of the eddy currents to the stripline FMR response can be very significant, because wide striplines (100 μm+) are conventionally used for the FMR measurements, it is negligible in the case of excitation of spin waves, just because very narrow stripline transducers (0.5–5 μm wide) are required in order to excite spin waves in metallic ferromagnetic films in a noticeable frequency/applied field range.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2016

Interface-driven spin-torque ferromagnetic resonance by Rashba coupling at the interface between nonmagnetic materials

The Rashba-Edelstein effect stems from the interaction between the electron's spin and its momentum induced by spin-orbit interaction at an interface or a surface. It was shown that the inverse Rashba-Edelstein effect can be used to convert a spin current into a charge current. Here, we demonstrate the reverse process of a charge-to spin-current conversion at a Bi/Ag Rashba interface. We show that this interface-driven spin current can drive an adjacent ferromagnet to resonance. We employ a spin-torque ferromagnetic resonance excitation/detection scheme which was developed originally for a bulk spin-orbital effect, the spin Hall effect. In our experiment, the direct Rashba-Edelstein effect generates an oscillating spin current from an alternating charge current driving the magnetization precession in a neighboring permalloy (Py, Ni 80 Fe 20 ) layer. As a result, electrical detection of the magnetization dynamics is achieved by a rectificationmechanism of the time dependent multilayer resistance arising from the anisotropic magnetoresistance.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2026

Absence of detectable spin and orbital pumping from Ni to Nb by out-of-plane ferromagnetic resonance

Excited ferromagnets can pump spin angular momentum, along with possibly orbital angular momentum. Among elemental ferromagnets, Ni has been proposed to exhibit substantial orbital pumping relative to spin pumping. Here, in this study, we search for a signature of orbital pumping by Ni, specifically by comparing out-of-plane ferromagnetic resonance in heterostructures without Ni (FeV/Nb) and with Ni (FeV-Ni/Nb). The FeV/Nb series shows a clear increase in Gilbert damping with the Nb sink thickness, attributed to spin pumping from FeV to Nb. Surprisingly, the FeV-Ni/Nb series exhibits no such damping increase, revealing no significant spin or orbital pumping from Ni to Nb. Our results offer a fresh perspective on angular-momentum transfer in Ni/Nb heterostructures.

Bakare, Omolara A [Virginia Polytechnic Inst. and ↗
DOE OSTI2018

Theory of spin-coherent electrical transport through a defect spin state in a metal/insulator/ferromagnet tunnel junction undergoing ferromagnetic resonance

In this work, we describe the coherent dynamics of electrical transport through a localized spin-dependent state, such as is associated with a defect spin, at the interface of a ferromagnet and a nonmagnetic material during ferromagnetic resonance. As the ferromagnet magnetic moment precesses, charge carriers are dynamically spin filtered by the localized state, leading to a dynamic spin accumulation on the defect. Local effective magnetic fields modify the precession of a spin on the defect, which also modifies the time-integrated total charge current through the defect. Lastly, we thus identify a form of current-detected spin resonance that reveals the local magnetic environment of a carrier spin located at a defect, and thus potentially the defect’s identity.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2022

Local Ferromagnetic Resonance Measurements of Mesoscopically Patterned Ferromagnets Using Deterministically Placed Nanodiamonds

Nitrogen-vacancy centers in diamond have recently been established as effective sensors of the magnetization dynamics in vicinal ferromagnetic materials. Here, we demonstrate sub-100-nm placement accuracy of nitrogen-vacancy-containing nanodiamonds and use these as local sensors that probe optically detected ferromagnetic resonance in mesoscopically patterned Permalloy islands. These measurements reveal variations in the ferromagnetic resonance signal at different sites on these structures with distinct behavior in the edge and the bulk of patterned features. These test measurements establish an easily implemented approach for spatially targeted measurements of spin dynamics in mesoscale ferromagnets. In principle, the methodology can also be extended to local studies of nanoscale ferromagnets, such as single magnetic nanowires and nanoparticles.

30 DIRECT ENERGY CONVERSION↗
DOE OSTI2014

Quantized spin waves in single Co/Pt dots detected by anomalous Hall effect based ferromagnetic resonance

Anomalous Hall effect (AHE) based ferromagnetic resonance (FMR) measurements were carried out on perpendicularly magnetized Co/Pt multilayer single dots of 0.4–3 μm in diameter. The resonance behavior was measured by detecting the decrease of perpendicular magnetization component due to magnetization precession. Resonance behavior was observed as a clear decrease of Hall voltages, and the obtained resonance fields were consistent with the results of vector-network-analyzer FMR. Spin-waves with cylindrical symmetry became significant by decreasing the dot diameter, and quantized multiple resonances were observed in the dot of 0.4 μm in diameter. The AHE based FMR proposed here is a powerful method to approach magnetization dynamics including spin waves and non-linear behavior excited in a finite nanostructure.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2016

Coupling of microwave magnetic dynamics in thin ferromagnetic films to stripline transducers in the geometry of the broadband stripline ferromagnetic resonance

We constructed a quasi-analytical self-consistent model of the stripline-based broadband ferromagnetic resonance (FMR) measurements of ferromagnetic films. Exchange-free description of magnetization dynamics in the films allowed us to obtain simple analytical expressions. They enable quick and efficient numerical simulations of the dynamics. With this model, we studied the contribution of radiation losses to the ferromagnetic resonance linewidth, as measured with the stripline FMR. We found that for films with large conductivity of metals the radiation losses are significantly smaller than for magneto-insulating films. Excitation of microwave eddy currents in these materials contributes to the total microwave impedance of the system. This leads to impedance mismatch with the film environment resulting in decoupling of the film from the environment and, ultimately, to smaller radiation losses. We also show that the radiation losses drop with an increase in the stripline width and when the sample is lifted up from the stripline surface. Hence, in order to eliminate this measurement artefact, one needs to use wide striplines and introduce a spacer between the film and the sample surface. The radiation losses contribution is larger for thicker films.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2014

Millimeter wave ferromagnetic resonance in gallium-substituted ε-iron oxide

In millimeter wave frequency range, hexagonal ferrites with high uniaxial anisotropic magnetic fields are used as absorbers. These ferrites include M-type barium ferrite (BaFe{sub 12}O{sub 19}) and strontium ferrite (SrFe{sub 12}O{sub 19}), which have natural ferromagnetic resonant frequency range from 40 GHz to 60 GHz. However, the higher frequency range lacks suitable materials that support the higher frequency ferromagnetic resonance. A new series of gallium-substituted ε-iron oxides (ε-Ga{sub x}Fe{sub 2−x}O{sub 3}) are synthesized which have ferromagnetic resonant frequencies appearing over the frequency range 30 GHz–150 GHz. The ε-Ga{sub x}Fe{sub 2−x}O{sub 3} is synthesized by the combination of reverse micelle and sol-gel techniques or the sol-gel method only. The particle sizes are observed to be smaller than 100 nm. In this paper, the free space magneto-optical approach has been employed to study these newly developed ε-Ga{sub x}Fe{sub 2−x}O{sub 3} particles in millimeter waves. This technique enables to obtain precise transmission spectra to determine the dielectric and magnetic properties of both isotropic and anisotropic ferrites in the millimeter wave frequency range from a single set of direct measurements. The transmittance and absorbance spectra of ε-Ga{sub x}Fe{sub 2−x}O{sub 3} are shown in this paper. Strong ferromagnetic resonances at different frequencies determined by the x parameter are found.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

High-output microwave detector using voltage-induced ferromagnetic resonance

We investigated the voltage-induced ferromagnetic resonance (FMR) with various DC bias voltage and input RF power in magnetic tunnel junctions. We found that the DC bias monotonically increases the homodyne detection voltage due to the nonlinear FMR originating in an asymmetric magnetization-potential in the free layer. In addition, the linear increase of an output voltage to the input RF power in the voltage-induced FMR is more robust than that in spin-torque FMR. These characteristics enable us to obtain an output voltage more than ten times than that of microwave detectors using spin-transfer torque.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2017

A proposed method for electronic feedback compensation of damping in ferromagnetic resonance

Here, we propose an experimental technique for extending feedback compensation of dissipative radiation used in nuclear magnetic resonance (NMR) to encompass ferromagnetic resonance (FMR). This method uses a balanced microwave power detector whose output is phase shifted π/2, amplified, and fed back to drive precession. Using classical control theory, we predict an electronically controllable narrowing of field swept FMR line-widths. This technique is predicted to compensate other sources of spin dissipation in addition to radiative loss.

36 MATERIALS SCIENCE↗
DOE OSTI2014

Electrical detection of ferromagnetic resonance in ferromagnet/n-GaAs heterostructures by tunneling anisotropic magnetoresistance

We observe a dc voltage peak at ferromagnetic resonance (FMR) in samples consisting of a single ferromagnetic (FM) layer grown epitaxially on the n-GaAs (001) surface. The FMR peak is detected as an interfacial voltage with a symmetric line shape and is present in samples based on various FM/n-GaAs heterostructures, including Co{sub 2}MnSi/n-GaAs, Co{sub 2}FeSi/n-GaAs, and Fe/n-GaAs. We show that the interface bias voltage dependence of the FMR signal is identical to that of the tunneling anisotropic magnetoresistance (TAMR) over most of the bias range. Furthermore, we show how the precessing magnetization yields a dc FMR signal through the TAMR effect and how the TAMR phenomenon can be used to predict the angular dependence of the FMR signal. This TAMR-induced FMR peak can be observed under conditions where no spin accumulation is present and no spin-polarized current flows in the semiconductor.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2016

Non-Volatile Ferroelectric Switching of Ferromagnetic Resonance in NiFe/PLZT Multiferroic Thin Film Heterostructures

Magnetoelectric effect, arising from the interfacial coupling between magnetic and electrical order parameters, has recently emerged as a robust means to electrically manipulate the magnetic properties in multiferroic heterostructures. Challenge remains as finding an energy efficient way to modify the distinct magnetic states in a reliable, reversible and non-volatile manner. Here we report ferroelectric switching of ferromagnetic resonance in multiferroic bilayers consisting of ultrathin ferromagnetic NiFe and ferroelectric Pb 0.92 La 0.08 Zr 0.52 Ti 0.48 O 3 (PLZT) films, where the magnetic anisotropy of NiFe can be electrically modified by low voltages. Ferromagnetic resonance measurements confirm that the interfacial charge-mediated magnetoelectric effect is dominant in NiFe/PLZT heterostructures. Non-volatile modification of ferromagnetic resonance field is demonstrated by applying voltage pulses. The ferroelectric switching of magnetic anisotropy exhibits extensive applications in energy-efficient electronic devices such as magnetoelectric random access memories, magnetic field sensors and tunable radio frequency (RF)/microwave devices.

42 ENGINEERING↗