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An evidence for prompt electric field disturbance driven by changes in the solar wind density under northward IMF B z condition
Before the onset of a geomagnetic storm on 22 January 2012 (Ap = 24), an enhancement in solar wind number density from 10/cm 3 to 22/cm 3 during 0440–0510 UT under northward interplanetary magnetic field (IMF Bz) condition is shown to have enhanced the high-latitude ionospheric convection and also caused variations in the geomagnetic field globally. Some conspicuous changes in ΔX are observed not only at longitudinally separated low-latitude stations over Indian (prenoon), South American (midnight), Japanese (afternoon), Pacific (afternoon) and African (morning) sectors but also at latitudinally separated stations located over high and middle latitudes. The latitudinal variation of the amplitude of the ΔX during 0440–0510 UT is shown to be consistent with the characteristics of prompt penetration electric field disturbances. Most importantly, the density pulse event caused enhancements in the equatorial electrojet strength and the peak height of the F layer (h m F 2 ) over the Indian dip equatorial sector. Furthermore, the concomitant enhancements in electrojet current and F layer movement over the dip equator observed during this space weather event suggest a common driver of prompt electric field disturbance at this time. Such simultaneous variations are found to be absent during magnetically quiet days. In the absence of significant change in solar wind velocity and magnetospheric substorm activity, these observations point toward perceptible prompt electric field disturbance over the dip equator driven by the overcompression of the magnetosphere by solar wind density enhancement.
First single crystal growth and structural analysis of superconducting layered bismuth oxyselenide; La(O,F)BiSe{sub 2}
Single crystals of La(O,F)BiSe{sub 2} were successfully grown for the first time by a CsCl flux method. Single crystal X-ray structural analysis clearly showed that La(O,F)BiSe{sub 2} crystallizes with space group P4/nmm (lattice parameters a=4.1408(2) Å, c=14.1096(6) Å). The structure is composed of alternating BiSe{sub 2} and La(O,F) layers. The bond distances and angles are similar to those of La(O,F)BiS{sub 2}. The bond valence sum calculation indicates the refined structure is slightly cation rich, suggesting the charge neutrality should be kept by modification of valence state of the cations. Magnetic susceptibility and resistivity measurements showed the compound is a superconductor with a transition temperature of 3.6 K, which is higher than that of as-grown La(O,F)BiS{sub 2}. - Graphical abstract: Single crystal La(O,F)BiSe{sub 2} has been prepared by a CsCl flux method. The structural analysis implies that La(O,F)BiSe{sub 2} is a potential superconductor having a higher T{sub c} under high pressure. - Highlights: • Single crystals of La(O,F)BiSe{sub 2} were grown by a CsCl flux method. • Crystal structure of La(O,F)BiSe{sub 2} was determined by single crystal X-ray analysis. • La(O,F)BiSe{sub 2} shows superconductivity with a transition temperature of 3.6 K. • Bonding nature and superconductivity of La(O,F)BiSe{sub 2} are discussed.
Physical properties of the layered $\mathcal{f}$-electron van der Waals magnet Ce 2 Te 5
Here. we report a detailed study of the magnetic, transport, and thermodynamic properties of Ce 2 Te 5 single crystals, a layered $\mathcal{f}$-electron van der Waals magnet. Four consecutive transitions at ~5.2, 2.1, 0.9, and 0.4 K were observed in the ac-plane electrical resistivity $\rho(T)$, which were further confirmed in specific heat $C_\text{p}(T)$ measurements. Analysis of the magnetic susceptibility $\chi(T)$, the magnetic-field variation of $\rho(T)$, and the increase of the first transition temperature ($T_c$ ~ 5.2 K) with applied magnetic field indicates ferromagnetic order, while the decrease of the other transitions with field suggests different states with dominant antiferromagnetic interactions below $T_2$ ~ 2.1 K, $T_3$ ~ 0.9 K, and $T_4$ = 0.4 K. Critical behavior analysis around Tc that gives critical exponents $\beta$ = 0.31(2), $\gamma$ = 0.99(2), $\delta$ = 4.46(1), and $T_c$ = 5.32(1) K indicates that Ce 2 Te 5 shows a three-dimensional magnetic critical behavior. Moreover, the Hall resistivity ρxy indicates that Ce2Te5 is a multiband system with a relatively high electron mobility ~2900 cm 2 V –1 s –1 near $T_c$, providing further opportunities for future device applications.
Proximity induced vortices and long-range triplet supercurrents in ferromagnetic Josephson junctions and spin valves
Using a spin-parameterized quasiclassical Keldysh-Usadel technique, we theoretically study supercurrent transport in several types of diffusive ferromagnetic (F)/superconducting (S) configurations with differing magnetization textures. We separate out the even- and odd-frequency components of the supercurrent within the low proximity limit and identify the relative contributions from the singlet and triplet channels. We first consider inhomogeneous one-dimensional Josephson structures consisting of a uniform bilayer magnetic S/F/F/S structure and a trilayer S/F/F/F/S configuration, in which case the outer F layers can have either a uniform or conical texture relative to the central uniform F layer. Our results demonstrate that for supercurrents flowing perpendicular to the F/F interfaces, incorporating a conical texture yields the most effective way to observe the signatures of long-ranged spin-triplet supercurrents. We also consider three different types of finite-sized two-dimensional magnetic structures subjected to an applied magnetic field normal to the junction plane: a S/F/S junction with uniform magnetization texture and two S/F/F/S configurations with differing F/F bilayer arrangements. In one case, the F/F interface is parallel with the S/F junction interfaces while in the other case, the F/F junction is oriented perpendicular to the S/F interfaces. We then discuss the proximity vortices and corresponding spatial maps of currents inside the junctions. For the uniform S/F/S junction, we analytically calculate the magnetic field induced supercurrent and pair potential in both the narrow and wide junction regimes, thus providing insight into the variations in the Fraunhofer diffraction patterns and proximity vortices when transitioning from a wide junction to a narrow one. Our extensive computations demonstrate that the induced long-range spin-triplet supercurrents can deeply penetrate uniform F/F bilayers when spin-singlet supercurrents flow parallel to the F/F interfaces. This is in stark contrast to configurations where a spin-singlet supercurrent flows perpendicular to the F/F interfaces. We pinpoint the origin of the induced triplet and singlet correlations through spatial profiles of the decomposed total supercurrents. We find that the penetration of the long-range spin-triplet supercurrents associated with supercurrents flowing parallel to the F/F interfaces is more pronounced when the thicknesses of the F strips are unequal. Finally, if one of the S terminals is replaced with a finite-sized normal metal, we demonstrate that the corresponding experimentally accessible S/F/F/N spin valve presents an effective platform in which the predicted long-range effects can be effectively generated and probed.
Josephson magnetic rotary valve
We propose a control element for a Josephson spin valve. It is a complex Josephson device containing ferromagnetic (F) layer in the weak-link area consisting of two regions, representing 0 and π Josephson junctions, respectively. The valve's state is defined by mutual orientations of the F-layer magnetization vector and boundary line between 0 and π sections of the device. We consider possible implementation of the control element by introduction of a thin normal metal layer in a part of the device area. By means of theoretical simulations, we study properties of the valve's structure as well as its operation, revealing such advantages as simplicity of control, high characteristic frequency, and good legibility of the basic states.
Method and apparatus for real time, in situ sensing and characterization of roughness, geometrical shapes, geometrical structures, composition, defects, and temperature in three-dimensional manufacturing systems
Methods and apparatuses for manufacturing are disclosed, including (a) providing an apparatus having: a laser; scanner; powder injection system; powder spreading system; dichroic filter; imager-and-processor; and computer; (b) programming the computer with specifications of a sample; (c) using the computer to set initial parameters based on the sample specifications; (d) adjusting a stage to position the sample; (e) focusing and scanning electromagnetic radiation onto the sample while powder is concurrently injected onto the sample in order to deposit a layer; (f) capturing two-dimensional images of the sample and probing the sample to determine whether the deposited layer was manufactured per the specifications; (g) use the computer to adjust the three-dimensional manufacturing parameters based on the determination made in step (f) prior to additively manufacturing a subsequent layer or making repairs; and (h) repeating steps (d), (e), (f), and (g) until the manufacture is complete. Other embodiments are described and claimed.
Significant reduction in the low-field magnetization of Nb 3 Sn superconducting strands using the internal oxidation APC approach
Nb 3 Sn superconductors are promising for building accelerator magnets for future energy-frontier circular colliders. A critical factor for this application is the low-field persistent-current magnetization because it leads to several critical issues: e.g. low-field instability (including flux jumps), hysteresis loss, and field errors in magnet bores. Suppression of low-field magnetization requires reduction of low-field critical current density (J c ) or effective subelement size (d eff ). However, reduction of deff of state-of-the-art Nb 3 Sn conductors—the restacked-rod-process (RRP ® ) type—below 40–50 μm without a pronounced decrease in high-field J c is difficult. On the other hand, the internal oxidation method which forms artificial pinning centers (APC) in Nb 3 Sn offers an alternative approach to reducing the low-field magnetization. Compared with a conventional Nb 3 Sn conductor whose flux pinning force versus field (F p –B) curve peaks at ~20% of its irreversibility field (B irr ), the F p –B curve peaks of APC conductors shift to higher fields due to the point pinning effect, leading to flattening of the J c –B curves. The goal of this paper is to quantitatively study how much the APC approach can reduce the low-field magnetization. Here we measured the J c –B curves of an RRP ® conductor and two APC conductors (reacted at 700 °C) from zero field to B irr using a high-field vibrating sample magnetometer. Here the results showed that the APC conductors have higher non-Cu J c at high fields (e.g. 32%–41% higher at 16 T) and simultaneously lower non-Cu Jc at low fields (e.g. 28%–34% lower at 1 T) compared with the RRP ® . This effect is due to a competition between their Nb3Sn layer fraction ratios and layer F p ratios. Suppose they reach the same 16 T non-Cu J c , then the 1 T non-Cu J c and magnetization of the APC conductors are only half or even less compared with the RRP ® conductor.
Transport in ferromagnet/superconductor spin valves
We consider charge transport properties in realistic, fabricable, ferromagnet/superconductor spin valves having a layered structure F 1 /N/F 2 /S, where F 1 and F 2 denote the ferromagnets, S the superconductor, and N the normal-metal spacer usually inserted in actual devices. Our calculation is fully self-consistent, as required to ensure that conservation laws are satisfied. We include the effects of scattering at all the interfaces. We obtain results for the device conductance G, as a function of bias voltage, for all values of the angle Φ between the magnetizations of the F 1 and F 2 layers and a range of realistic values for the material and geometrical parameters in the sample. We discuss, in the context of our results for G, the relative influence of all parameters on the spin valve properties. We also study the spin current and the corresponding spin-transfer torque in F 1 /F 2 /S structures.
Bias current dependence of superconducting transition temperature in superconducting spin-valve nanowires
Competition between superconducting and ferromagnetic ordering at interfaces between ferromagnets (F) and superconductors (S) gives rise to several proximity effects such as odd-triplet superconductivity and spin-polarized supercurrents. A prominent example of an S/F proximity effect is the spin switch effect (SSE) observed in S/F/N/F superconducting spin-valve multilayers, in which the superconducting transition temperature T c is controlled by the angle $\phi$ between the magnetic moments of the F layers separated by a nonmagnetic metallic spacer N. Here we present an experimental study of SSE in Nb/Co/Cu/Co/CoO x nanowires measured as a function of bias current flowing in the plane of the layers. In this work, these measurements reveal an unexpected dependence of T c ($\phi$) on the bias current: T c (π)–T c (0) changes sign with increasing current bias. We attribute the origin of this bias dependence of the SSE to a spin Hall current flowing perpendicular to the plane of the multilayer, which suppresses T c of the multilayer. The bias dependence of SSE can be important for hybrid F/S devices such as those used in cryogenic memory for superconducting computers as device dimensions are scaled down to the nanometer length scale.
Nanoscale magnetic Josephson junctions and superconductor/ferromagnet proximity effects for low-power spintronics
Competition between superconducting and ferromagnetic ordering at interfaces between ferromagnets (F) and superconductors (S) gives rise to several proximity effects such as odd-triplet superconductivity and spin-polarized supercurrents. A prominent example of an S/F proximity effect is the spin switch effect observed in S/F/N/F superconducting spin valve multilayers, in which the superconducting transition temperature T c is controlled by the angle Φ between the magnetic moments of the F layers separated by a nonmagnetic metallic spacer N. We carried out an experimental study of spin switch effect in Nb/Co/Cu/Co/CoO x nanowires measured as a function of bias current flowing in the plane of the layers. These measurements reveal an unexpected dependence of T c (Φ) on the bias current: T c (Φ) – T c (0) changes sign with increasing current bias. We attribute the origin of this bias dependence of the spin switch effect to a spin Hall current originating in Nb and flowing perpendicular to the plane of the multilayer, which suppresses T c of the multilayer. The bias dependence of spin switch effect can be important for hybrid F/S devices such as cryogenic memory for superconducting computers when device dimensions are scaled down to the nanometer length scale.
Building a spontaneously formed and self-healing protective layer with an F-rich electrochemically active organic molecule for ultra-stable Li metal batteries
Additives in the electrolyte act as engineers in Li metal batteries. Inspired by the superior cycle performance of organic materials in half cells, tetrafluoro-1,4-benzoquinone (TFBQ), the main structure of which has been widely applied as an organic cathode material, is utilized for the first time as an additive for Li metal protection. By chemical and electrochemical reactions between TFBQ and the Li metal surface, an F-rich interface layer is in situ formed on the Li metal surface during the charge and discharge process. From electrochemical tests and characterization, the powerful self-healing ability of the interface layer enabled by TFBQ is revealed, making an extremely stable Li metal anode. By using a lean electrolyte with 0.1 M TFBQ, the cycle life of Li|Li symmetric cells is increased at least 6 times compared to the control group. Moreover, impressive full cell performance was achieved. Ultra-stable Li–LFP cells showed a 0.026% average degradation for 600 cycles at 1C and Li–NMC622 cells showed a 36.8% higher capacity compared to the control group over 200 cycles at 0.5C, which are among the best results reported. Furthermore, this work efficiently and conveniently provides a new research direction to Li metal protection and Li metal batteries.
Excitation of guided ELF-VLF waves through modification of the F{sub 2} ionospheric layer by high-power radio waves
The possibility of controlled excitation of ELF-VLF electromagnetic waves through modification of the F{sub 2} ionospheric layer by high-power high-frequency emission is demonstrated in a natural experiment by using the Sura midlatitude heating facility. The excited low-frequency waves can be used to explore the near-Earth space and stimulate the excitation of a magnetospheric maser.
Exposure History and its Effect Towards Stabilizing Li Exchange Across Disordered Rock Salt Interfaces
Abstract The application of lithium rich disordered rock salts (DRX) as cathode materials has greatly expanded the materials space for high energy density cathodes. These materials are able to consistently achieve capacities higher than via a complex percolation based intercalation mechanism. Most current DRX materials face significant capacity fade when cycled over an extended period. One of the factors responsible for this could be deleterious side effect of interface reactions between the electrode and electrolyte at high voltage. We aim to focus on one aspect of this interaction, i.e the effect of exposure to electrolyte on the surface and its effect on the electrochemical properties of (LMNOF) powder. LMNOF was systematically treated in an electrolyte solution for varying periods of time at an elevated temperature. Treated samples exhibit surface layer modification (removal of F rich surface layer), leading to a 10 % improvement in the capacity retention behavior of LMNOF. Surface and bulk based measurements indicate an increase in disorder and gradual removal of F and Li. All of these processes mimic an aging process similar to cycling. This a priori formed interface allows for increased stability with respect to retention of capacity and oxygen loss.
Fluorocarbon assisted atomic layer etching of SiO{sub 2} and Si using cyclic Ar/C{sub 4}F{sub 8} and Ar/CHF{sub 3} plasma
The need for atomic layer etching (ALE) is steadily increasing as smaller critical dimensions and pitches are required in device patterning. A flux-control based cyclic Ar/C{sub 4}F{sub 8} ALE based on steady-state Ar plasma in conjunction with periodic, precise C{sub 4}F{sub 8} injection and synchronized plasma-based low energy Ar{sup +} ion bombardment has been established for SiO{sub 2} [Metzler et al., J. Vac. Sci. Technol. A 32, 020603 (2014)]. In this work, the cyclic process is further characterized and extended to ALE of silicon under similar process conditions. The use of CHF{sub 3} as a precursor is examined and compared to C{sub 4}F{sub 8}. CHF{sub 3} is shown to enable selective SiO{sub 2}/Si etching using a fluorocarbon (FC) film build up. Other critical process parameters investigated are the FC film thickness deposited per cycle, the ion energy, and the etch step length. Etching behavior and mechanisms are studied using in situ real time ellipsometry and x-ray photoelectron spectroscopy. Silicon ALE shows less self-limitation than silicon oxide due to higher physical sputtering rates for the maximum ion energies used in this work, ranged from 20 to 30 eV. The surface chemistry is found to contain fluorinated silicon oxide during the etching of silicon. Plasma parameters during ALE are studied using a Langmuir probe and establish the impact of precursor addition on plasma properties.
Effect of resistivity on poloidal asymmetries in electron density in the edge and scrape off layer in 3D full-F gyro-fluid simulations with FELTOR
In this contribution, we analyze the poloidal asymmetries in electron density in the edge and scrape-off layer (SOL) in a COMPASS-sized, diverted tokamak with the 3D full-F, isothermal, electromagnetic, and gyro-fluid model FELTOR. The study is performed for different simulations that span over 2 orders of magnitude in resistivity. The poloidal asymmetries of density are evaluated in the edge and the SOL relative to the outer midplane (OMP), where the highest densities are usually found. In the closed magnetic surfaces, the relative poloidal asymmetry with respect to the OMP is not larger than 20% independently of the plasma resistivity. For the open field lines in the SOL, the relative density asymmetry can range from 55% for the highest resistivity to around 40% for the lowest. The lowest densities inside the separatrix are found between the inner midplane and the top of the magnetic configuration, away from the X-point. In the SOL it is usually close to the X-point in the high field side. The observations in the closed field lines are consistent with ballooning transport but in the SOL oppose experimental evidence for high-density plasmas. In conclusion, this indicates the necessity for more complex physics to reproduce the experimental observations in the SOL for higher density plasmas, such as neutral-plasma dynamics and realistic divertor conditions.
Synthesis and structure of a new layered oxyfluoride Sr{sub 2}ScO{sub 3}F with photocatalytic property
Highlights: • A new oxyfluoride compound Sr{sub 2}ScO{sub 3}F was prepared by a solid state route. • The structure of this compound was determined by GSAS program based on XRD data. • The photocatalytic property was investigated under UV irradiation. - Abstract: A new Ruddlesden–Popper type scandium oxyfluoride, Sr{sub 2}ScO{sub 3}F, was synthesized by a conventional solid state reaction route. The detailed structure of Sr{sub 2}ScO{sub 3}F was investigated using X-ray diffraction (XRD) and selected area electron diffraction (SAED). The disorder distribution pattern of fluorine anions was determined by the {sup 19}F nuclear magnetic resonance (NMR) spectrum. The compound crystallizes in a K{sub 2}NiF{sub 4}-type tetragonal structure (space group I4/mmm) with O/F anions disordered over the apical sites of the perovskite-type Sc(O,F){sub 6} octahedron layers interleaved with strontium cations. Ultraviolet–visible (UV–vis) diffuse reflection spectrum of the prepared Sr{sub 2}ScO{sub 3}F indicates that it has an absorption in the UV–vis region. The photocatalytic activity of Sr{sub 2}ScO{sub 3}F was further investigated, showing an effective photodegradation of Rhodamine-B (RB) within 2 h under UV light irradiation.