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7 records
All sourcesNASA NTRSDOE OSTI
DOE OSTI2020

Materials Data on Er(SiOs)2 by Materials Project

ErOs2Si2 crystallizes in the tetragonal I4/mmm space group. The structure is three-dimensional. Er3+ is bonded in a 8-coordinate geometry to eight equivalent Os+1.50- atoms. All Er–Os bond lengths are 3.18 Å. Os+1.50- is bonded in a 4-coordinate geometry to four equivalent Er3+ and four equivalent Si atoms. All Os–Si bond lengths are 2.40 Å. Si is bonded in a 5-coordinate geometry to four equivalent Os+1.50- and one Si atom. The Si–Si bond length is 2.45 Å.

36 MATERIALS SCIENCE↗
DOE OSTI2024

Magnetic properties of the quasi-XY Shastry-Sutherland magnet ER 2 Be 2 SiO 7

Polycrystalline and single-crystal samples of the insulating Shastry-Sutherland compound Er 2 ⁢Be 2 ⁢SiO 7 were synthesized via a solid-state reaction and the floating zone method, respectively. The crystal structure, Er single-ion anisotropy, zero-field magnetic ground state, and magnetic phase diagrams along high-symmetry crystallographic directions were investigated with bulk measurement techniques, x-ray and neutron diffraction, and neutron spectroscopy. Here, we establish that Er 2 ⁢Be 2 ⁢SiO 7 crystallizes in a tetragonal space group with planes of orthogonal Er dimers and a strong preference for the Er moments to lie in the local plane perpendicular to each dimer bond. We also find that this system has a noncollinear ordered ground state in zero field with a transition temperature of 0.841 K consisting of antiferromagnetic dimers and in-plane moments. Finally, we mapped out the H-T phase diagrams for Er 2 ⁢Be 2 ⁢SiO 7 along the directions H ∥ [001], [100], and [110]. While an increasing in-plane field simply induces a phase transition to a field-polarized phase, we identify three metamagnetic transitions in the H ∥ [001] case. Single-crystal neutron diffraction results reveal that the H ∥ [001] phase diagram can be explained predominantly by the expected field-induced behavior of classical, anisotropic moments, although the microscopic origin of one phase requires further investigation.

36 MATERIALS SCIENCE↗
NASA NTRSDate not supplied

Temperature Sensing to Above 1500 °C Using Y 2 SiO 5 :Er Phosphor Thermometry

A transition from metallic to ceramic turbine components that can operate at higher turbine engine temperatures will push component surface temperatures from below 1200 °C into a 1300 to 1500 °C temperature range that is much more challenging for phosphor thermometry measurements. To address this challenge, Y 2 SiO 5 :Er was selected for its high temperature sensing performance by both luminescence lifetime and luminescence intensity ratio (LIR) methods as well as its thermochemical compatibility with the current generation of rare earth silicate environmental barrier coatings (EBCs) that are required to protect SiC/SiC ceramic composite components. Lifetime measurements that monitor the Er3+ 4S3/2→4I15/2 emission decay at 542 nm exhibited a slow decrease in decay time with temperature up to 1300° C, above which the decay decreased steeply to provide good temperature sensitivity in the 1300 to 1500 °C range (Fig. 1). LIR images were obtained where each pixel represented the ratio I488/I561 (I488 and I561 are the detected 488 nm 4F7/2→4I15/2 and the 561 nm 4S3/2→4I15/2 emission band intensities, respectively). Good temperature sensitivity (Fig. 2) and signal-to-background ratios were observed to above 1500 °C. Contrary to conventional guidance on selecting phosphors for high temperature sensing, the detected emission band intensities and decay times exhibited remarkably slow decreases with temperature up into the 1300 to 1500 °C range despite high phonon energies (>900 cm-1) that allow the energy gap between the 4S3/2 emitting reservoir level and the 4F9/2 level below it to be bridged by as few as three phonons. The benefits of utilizing a thermographic phosphor at very high temperatures that exhibits strong nonradiative multiphonon relaxation even at room temperature is explained by a competition between spontaneous and stimulated multiphonon emission, and the more temperature-sensitive decay time above 1300 °C is explained by a transition from high to low effective phonon energies.

temperature measurement↗
NASA NTRSDate not supplied

Environmental Barrier Coating Surface Temperature Mapping Using a Compatible Er-Doped Sc 2 SiO 5 Temperature-Sensing Layer

Accurate surface temperature-mapping capabilities in the 1300 to 1500 °C range are needed for SiC/SiC ceramic matrix composites protected by environmental barrier coatings (EBCs) under testing in turbine engine environment facilities. The strong background thermal radiation at these higher temperatures is a challenging issue. Er-doped Y 2 SiO 5 was previously shown to be capable of achieving luminescence lifetime-based temperature mapping up to 1560 °C as a standalone material. However, compatibility issues between an Er-doped Y 2 SiO 5 surface temperature sensing layer and an underlying Sc 2 Si 2 O 7 -based EBC topcoat limited temperature mapping of the EBC surface to a maximum of 1380 °C. Therefore, an Er-doped Sc 2 SiO 5 temperature sensing layer has been subsequently developed with better compatibility with the Sc2Si2O7-based EBC topcoat. Localized spot temperature measurements as well as luminescence lifetime imaging-based temperature mapping were demonstrated up to 1535 °C from a 15 µm thick Er-doped Sc 2 SiO 5 layer at the surface of a Sc2Si2O7-based EBC topcoat, a significant improvement over the Er-doped Y2SiO5 layer 1380 °C temperature sensing limit. No degradation of the Er-doped Sc 2 SiO 5 temperature sensing surface layer was observed.

temperature measurement↗
DOE OSTI2021

Photonic integration of Er 3+ :Y 2 SiO 5 with thin-film lithium niobate by flip chip bonding

Rare earth ions are known as promising candidates for building quantum light-matter interface. However, tunable photonic cavity access to rare earth ions in their desired host crystal remains challenging. Here, we demonstrate the integration of erbium doped yttrium orthosilicate (Er 3+ :Y 2 SiO 5 ) with thin-film lithium niobate photonic circuit by plasma-activated direct flip chip bonding. Resonant coupling to erbium ions is realized by on-chip electro-optically tuned high Q lithium niobate micro-ring resonators. Fluorescence and absorption of erbium ions at 1536.48 nm are measured in the waveguides, while the collective ion-cavity cooperativity with micro-ring resonators is assessed to be 0.36. This work presents a versatile scheme for future rare earth ion integrated quantum devices.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
NASA NTRSDate not supplied

Development of Luminescence Lifetime-Based Surface Temperature Mapping for Environmental Barrier Coatings

Luminescence lifetime-based temperature mapping for thermal barrier coatings (TBCs) has been previously demonstrated up to temperatures approaching 1200 °C. Advantages of this method include insensitivities to reflected radiation and emissivity uncertainties. Because of a push towards greater efficiency turbine engine operation using higher turbine inlet temperatures, there is an ongoing movement from TBC-coated superalloy turbine engine components to SiC/SiC ceramic matrix composite components protected by environmental barrier coatings (EBCs). The useful application of luminescence lifetime-based temperature mapping to EBCs requires a significant increase in high temperature capability from below 1200 °C up into the 1300 to 1500 °C temperature range where the much higher background thermal radiation is a challenging issue. In addition, the luminescing sensing layer must exhibit thermochemical compatibility with the EBC. To meet these requirements, Er-doped Y 2 SiO 5 was selected as the luminescing sensor layer material both for its enhanced temperature sensitivity above 1300 °C and its compatibility with rare-earth disilicate EBC topcoats. Both localized spot temperature measurements as well as luminescence lifetime imaging-based temperature mapping were demonstrated up to 1560 °C for Er-doped Y 2 SiO 5 disks. In addition, temperature mapping capability was demonstrated from a 15 µm thick Er-doped Y 2 SiO 5 layer at the surface of a Sc 2 Si 2 O 7 based EBC topcoat. Both localized spot and temperature mapping by luminescence lifetime imaging were demonstrated up to 1380 °C (upper temperature limit of this slurry-based layered EBC) with excellent suppression of background thermal radiation and no degradation of the Er-doped Y 2 SiO 5 temperature sensing surface layer. The source of the novel enhanced temperature sensitivity above 1300 °C will be discussed as well as a path towards compatibility between sensing layer and EBC topcoat to higher temperatures.

temperature measurement↗
DOE OSTI2020

Epitaxial Er-doped Y 2 O 3 on silicon for quantum coherent devices

Rare-earth ions have incomplete 4f shells and possess narrow optical intra-4f transitions due to shielding from electrons in the 5s and 5p orbitals, making them good candidates for solid-state optical quantum memory. The emission of Er 3+ in the telecom C-band (1530 nm – 1565 nm) makes it especially attractive for this application. In order to build practical, scalable devices, the REI needs to be embedded in a non-interacting host material, preferably one that can be integrated with silicon. In this paper, we show that Er 3+ can be isovalently incorporated into epitaxial Y 2 O 3 thin films on Si (111). We report on the synthesis of epitaxial, single-crystalline Er:Y 2 O 3 on Si with a narrow inhomogeneous linewidth in the photoluminescence spectra, 5.1 GHz (<100 mK) and an optical excited state lifetime of 8.1 ms. The choice of Y 2 O 3 was driven by its low nuclear spin and small lattice mismatch with Si. Using photoluminescence (PL) and electron paramagnetic resonance, we show that Er 3+ substitutes for Y in the crystal lattice. The role of interfacial SiO x , diffusion of silicon into the film, and the effect of buffer layers on inhomogeneous PL linewidth are examined. We also find that the linewidth decreased monotonically with film thickness but surprisingly exhibits no correlation with the film crystalline quality as measured by the x-ray rocking curve scans suggesting other factors at play that limit the inhomogeneous broadening in Y 2 O 3 films.

36 MATERIALS SCIENCE↗