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Results for “Epitaxial growth”

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At least 19 records
All sourcesNASA NTRSDOE OSTI
NASA NTRS1987

Elucidation of the organometallic vapor phase epitaxial growth mechanism for InP

A new technique for tracing the organometallic vapor epitaxial growth is reported. The pyrolysis of PH3, alone and in the presence of trimethylindium (TMIn), and of TMIn alone was studied by conducting the epitaxial growth of InP in D2 as the carrier gas, tracing growth reactions by mass spectrometric analysis of the product molecules. The TMIn alone pyrolyzes mostly homogeneously in the gas phase, while the PH3 pyrolysis is completely heterogeneous at the InP surface. Adding TMIn to PH3 results in a dramatic decrease in the pyrolysis temperature. PH3 molecules which interact with TMIn in the gas phase pyrolyze at temperatures as low as 250, and those decomposing without TMIn interaction pyrolyze at temperatures approximately 200 C higher. Similarly, the presence of PH3 lowers the TMIn pyrolysis temperature by at least 50 C. TMIn alone in D2 produces mainly CH3D molecules. For high PH3:TMIn ratios, CH4 is the only carbon-containing reaction product.

Buchan, N. I.↗
NASA NTRS1989

In situ transmission electron microscopy study on the epitaxial growth of CoSi2 on Si(111) at temperatures below 150 C

This paper reports an in situ transmission electron microscopy study on the epitaxial growth of CoSi2 on Si(111) from a 10-nm-thick amorphous mixture of Co and Si in the ratio 1:2, which was formed by codeposition of Co and Si near room temperature. Nuclei of CoSi2 are observed in the as-deposited film. These nuclei are epitaxial and extend through the whole film thickness. Upon annealing, these columnar epitaxial CoSi2 grains grow laterally at temperatures as low as 50 C. The kinetics of this lateral epitaxial growth was studied at temperatures between 50 and 150 C. The activation energy of the growth process is 0.8 + or - 0.1 eV.

Nieh, C. W.↗
DOE OSTI2025

Chemistry and Interfacial Structure Promoting Quasi-van der Waals Epitaxial Growth of WS 2 Nanosheets on Sapphire for Prospective Application in Field-Effect Transistors

How do chemical and structural modifications to the supporting crystal surface affect the subsequent van der Waals (vdW) or quasi(Q)-vdW epitaxial growth of 2D nanocrystals? Developing an atomic-scale picture of such an interfacial system is crucial for understanding its impact on the physical and chemical properties of the supported 2D materials. The elucidation of the interfacial structure and chemistry needed to promote the Q-vdW epitaxial growth of 2D tungsten disulfide (WS 2 ) nanocrystals contributes to the growth mechanism understanding, thus pushing forward the integration of such atomically thin semiconductors toward real field-effect transistor applications. In addition to an atomic-force microscopy top view, we showcase a combination of X-ray techniques for a top-to-bottom investigation of the complexities of the buried interface structures. Furthermore, this approach uses X-ray photoelectron spectroscopy, X-ray standing wave excited X-ray fluorescence, and crystal truncation rod scattering to produce a highly resolved chemical-state-specific 3D atomic map for the extended interface structure of WS 2 /α-Al 2 O 3 (001). Employing these detailed analysis methods, along with density functional theory to further refine the picoscale structure, we demonstrate how two different types of interface engineering during the pregrowth stage lead to significant differences in the chemical and structural modifications to the terminal surface of c-face sapphire, which in turn leads to substantial differences in the submonolayer growth of supported WS 2 2D nanocrystals in terms of lateral domain sizes, epitaxial registry, vdW gaps, and stability.

36 MATERIALS SCIENCE↗
NASA NTRS1973

Epitaxial growth of III-V compounds for electroluminescent light sources

The epitaxial growth techniques used in the fabrication of III-V compound electroluminescent devices are reviewed. Both vapor and liquid phase epitaxial techniques are discussed, including the applications of these techniques to well established materials as well as newer materials. The state of the art of light-emitting devices fabricated from members of the III-V compounds and their solid solutions is also reviewed.

Chu, T. L.↗
NASA NTRS1996

Epitaxial Growth of beta-Silicon Carbide (SiC) on a Compliant Substrate via Chemical Vapor Deposition (CVD)

Many lattice defects have been attributed to the lattice mismatch and the difference in the thermal coefficient of expansion between SiC and silicon (Si). Stacking faults, twins and antiphase boundaries are some of the lattice defects found in these SiC films. These defects may be a partial cause of the disappointing performance reported for the prototype devices fabricated from beta-SiC films. The objective of this research is to relieve some of the thermal stress due to lattice mismatch when SiC is epitaxially grown on Si. The compliant substrate is a silicon membrane 2-4 microns thick. The CVD process includes the buffer layer which is grown at 1360 C followed by a very thin epitaxial growth of SiC. Then the temperature is raised to 1500 C for the subsequent growth of SiC. Since silicon melts at 1415 C, the SiC will be grown on molten Silicon which is absorbed by a porous graphite susceptor eliminating the SiC/Si interface. We suspect that this buffer layer will yield less stressed material to help in the epitaxial growth of SiC.

Mitchell, Sharanda L.↗
NASA NTRS1973

Solid-phase epitaxial growth of Si mesas from Al metallization.

Using scanning electron microscopy, Si epitaxial growth from solution in solid Al onto crystal Si substrates was studied. Growth in reentrant corners of the substrate was found to be favored over growth onto a flat surface. These preferred locations for growth appear to be the result of a force not present in conventional crystal growth from fluid media, namely, the nonuniform stress field present in solids.

Sankur, H.↗
DOE OSTI2025

Epitaxial growth of conducting perovskite SrTiO3 on (0001) c-axis sapphire using a γ-Al2O3 intermediate layer

Epitaxial growth of complex oxides on large-area wafers, such as sapphire and silicon, represents a key step toward scalable oxide device production. Solid phase epitaxy allows the synthesis of γ-Al 2 O 3 on α-Al 2 O 3 and provides a template with a matched lattice constant and appropriate cubic symmetry for subsequent heteroepitaxial growth of perovskite complex oxides. Nb-doped SrTiO 3 thin films were deposited epitaxially on (111)-oriented γ-Al 2 O 3 intermediate layers on (0001) c-axis-oriented sapphire α-Al 2 O 3 crystals using pulsed laser deposition. The Nb:SrTiO 3 thin films with a thickness of 53 nm, grown at 700 °C on γ-Al 2 O 3 , reached fully relaxed lattice parameters and were epitaxially oriented with respect to the substrate. Nb:SrTiO 3 layers deposited using identical deposition conditions directly on α-Al 2 O 3 , without the γ-Al 2 O 3 intermediate layer, were polycrystalline. The sheet conductivity of Nb:SrTiO 3 grown on γ-Al 2 O 3 /α-Al 2 O 3 is more than ten times higher than that of Nb:SrTiO 3 grown directly on α-Al 2 O 3 without the γ-Al 2 O 3 layer. The results point to new directions for the integration of (111)-oriented pseudocubic perovskite complex oxides and the integration of epitaxial complex oxides over larger areas using α-Al 2 O 3 single-crystal substrates.

Atomic force microscopy↗
DOE OSTI2025

Epitaxial Growth of 2D Core‐Crown SnS 2 /SnSe 2 Heterostructure Through Interfacial Modification with Polyvinylpyrrolidone

Abstract Developing generalized strategies for controlled synthesis of 2D heterostructures remains a significant challenge because the existing approaches often suffer from poor reproducibility and scalability. In this study, a solution synthesis approach for epitaxial core‐crown heterostructures with controlled band alignment, that overcomes these challenges is reported. Polyvinylpyrrolidone (PVP) is used as a structure‐directing agent to reduce lattice mismatch between SnS 2 and SnSe 2 (10‐10) surfaces and direct epitaxial growth of SnSe 2 crown on SnS 2 seed. Additionally, PVP adsorption to the basal plane prevents van der Waals stacking and stabilizes 2D heterostructures during synthesis. Driven by interfacial thermodynamics, the formation of the core‐crown heterostructure is highly reproducible and the size of the 2D heterostructure and relative areas of the core and the crown can be precisely controlled in a two‐step process by varying synthesis times for the seed and the crown. The identified growth pathway for 2D heterostructures can be generalized to other combinations of van der Waals materials to provide a platform for synthesizing micron‐size epitaxial heterostructures with a desired electronic structure for catalysis and microelectronics.

Liu, Lili [Physical and Computational Sciences Dir↗
NASA NTRS1988

Reaction mechanisms in the organometallic vapor phase epitaxial growth of GaAs

The decomposition mechanisms of AsH3, trimethylgallium (TMGa), and mixtures of the two have been studied in an atmospheric-pressure flow system with the use of D2 to label the reaction products which are analyzed in a time-of-flight mass spectrometer. AsH3 decomposes entirely heterogeneously to give H2. TMGa decomposes by a series of gas-phase steps, involving methyl radicals and D atoms to produce CH3D, CH4, C2H6, and HD. TMGa decomposition is accelerated by the presence of AsH3. When the two are mixed, as in the organometallic vapor phase epitaxial growth of GaAs, both compounds decompose in concert to produce only CH4. A likely model is that of a Lewis acid-base adduct that forms and subsequently eliminates CH4.

Larsen, C. A.↗
NASA NTRS1989

Transient-mode liquid phase epitaxial growth of GaAs on GaAs-coated Si substrates prepared by migration-enhanced molecular beam epitaxy

Planar oxide-maskless growth of GaAs was demonstrated by transient-mode liquid phase epitaxy (TMLPE) on GaAs-coated Si substrates that were prepared by migration-enhanced molecular beam epitaxy (MEMBE). In TMLPE, the cool substrate was brought into contact with hot melts for a short time. A GaAs layer as thick as 30 microns was grown in 10 sec. The etch pits observed in TMLPE-grown layers became longer in one direction and decreased in density with increasing the TMLPE epilayer thickness. The density of etch pits in a 20 micron-thick layer was approximately 5 x 10 the 6th/sq cm. Strong bandgap emission elliptically polarized with a major axis perpendicular to the surface was observed at about 910 nm, while deep-level emission from the TMLPE/MEMBE GaAs interface was detected at 980 nm. The photoluminescence intensity divided by the carrier concentration of the TMLPE-grown layer was about 270 times larger than that of the MEMBE-grown layer used as a substrate.

Nakamura, Shuji↗
DOE OSTI2025

Decoupling Li out-diffusion and surface diffusion in the lithiation-assisted epitaxial growth of lithium tungstate

Lithiation-assisted epitaxy offers a flexible and robust approach for synthesizing high-quality Li-containing materials and interfaces with precise control. Here, in this study, we use lithium tungstate (Li x WO 3+x/2 , where x = 0 to 2) as a model system to investigate the intertwined effects of Li out-diffusion-induced compositional changes and surface-diffusion-induced morphological changes. By systematically varying synthesis and processing conditions, we uncover their impact on lithium tungstate film formation. Comprehensive characterizations, including X-ray diffraction, atomic force microscopy, X-ray photoemission spectroscopy and time-of-flight secondary ion mass spectrometry, reveal that low-temperature growth (< 300 °C) followed by high-temperature annealing yields continuous lithium tungstate films with significantly reduced surface roughness. In contrast, high-temperature deposition (≥ 300 °C) accelerates surface diffusion and Li out-diffusion, leading to island formation. Furthermore, in situ scanning transmission electron microscopy demonstrates the beam sensitivity of Li 2 WO 4 and reveals a phase transition from Li 2 WO 4 to LiWO 3.5 under prolonged electron beam exposure. These findings deepen our understanding of how to control composition and morphology of Li-containing films, providing valuable insights for the design and integration of energy materials.

Shi, Jueli [Pacific Northwest National Laboratory ↗
DOE OSTI2025

Pulsed laser deposition assisted epitaxial growth of cesium telluride photocathodes for high brightness electron sources

The development of high-brightness electron sources is critical to state-of-the-art electron accelerator applications like X-ray free electron laser (XFEL) and ultra-fast electron microscopy. Cesium telluride is chosen as the electron source material for multiple cutting-edge XFEL facilities worldwide. This manuscript presents the first demonstration of the growth of highly crystalized and epitaxial cesium telluride thin films on 4H-SiC and graphene/4H-SiC substrates with ultrasmooth film surfaces. The ordering of the film was characterized by in situ reflection high energy electron diffraction and multiple X-ray diagnostics. The results of the quantum efficiency performance for epitaxial cesium telluride photocathodes are also reported.

43 PARTICLE ACCELERATORS↗
DOE OSTI2026

Epitaxial growth and physical properties of Bi 2 Ru 2 O 7 thin films on YSZ(111) substrates

We systematically investigated the growth of Bi 2 Ru 2 O 7 thin films on a Y-stabilized ZrO 2 (111) substrate using pulsed laser deposition by mapping the influence of growth temperature and oxygen partial pressure on phase stability, lattice parameters, and cation ratio. The results show that the epitaxial stabilization requires a minimum growth temperature, which is rather insensitive to the pressure. Meanwhile, the Bi:Ru ratio decreases when increasing growth temperature or decreasing pressure. By constructing the temperature–pressure phase diagram, an optimal growth window within the epitaxial phase was established. On the other hand, the electrical resistivity remains at a similar level within the epitaxial phase with only subtle changes to the temperature dependence, indicative of the robustness of the conductivity against composition variation. Our study provides a foundation for future investigations on thin films and heterostructures that utilize Bi 2 Ru 2 O 7 .

Crystallography↗