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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 19 records

Plasmon enhanced fluorescence studies from aligned gold nanorod arrays modified with SiO{sub 2} spacer layers

Here, we demonstrate that quasi self-standing Au nanorod arrays prepared with plasma polymerisation deposited SiO{sub 2} dielectric spacers support surface enhanced fluorescence (SEF) while maintaining high signal reproducibility. We show that it is possible to find a balance between enhanced radiative and non-radiative decay rates at which the fluorescent intensity is maximized. The SEF signal optimised with a 30 nm spacer layer thickness showed a 3.5-fold enhancement with a signal variance of <15% thereby keeping the integrity of the nanorod array. We also demonstrate the decreased importance of obtaining resonance conditions when localized surface plasmon resonance is positioned within the spectral region of Au interband transitions. Procedures for further increasing the SEF enhancement factor are also discussed.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Optical filtering and luminescence property of some molybdates prepared by combustion synthesis

As an important class of lanthanide inorganic compounds, rare earth ions doped molybdates have gained much attention due to their attractive luminescence and structural properties, supporting various promising applications as phosphor materials in the fields such as white light-emitting diodes, optical fibers, biolabel, lasers, and so on. The molybdate family has promising trivalent cation conducting properties and most of the optical properties result from electron transitions of the 4f shell, which are greatly affected by the composition and structures of rare-earth compounds. In this paper we report the molybdate CaMoO{sub 4}:Eu{sup 3+} for red SSL and Bi{sub 1.4}Y{sub 0.6}MoO{sub 6}, Y{sub 6}MoO{sub 12} for optical filtering, prepared by one step combustion synthesis.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Forbidden optical transition in Ti-like Xe, Ba, and Ir

We present measurements of the (3d{sup 4}){sup 5}D{sub 2}−{sup 5}D{sub 3} transitions in the Ti-like ions Xe{sup 32+}, Ba{sup 34+}, and Ir{sup 55+} produced and trapped in the Heidelberg electron beam ion trap. The obtained wavelengths have a precision at the few ppm-level and are thereby the most precise measurements of these transitions up to date. For Z=60−75 semi-empirical calculations have shown excellent agreement, however our measurements combined with data from other works shows that outside this range predictions quickly deviate. The value obtained for Ir{sup 55+} 357.434(2) nm confirms the linear mismatch to ab initio calculations for Z > 70, as hypothesized in Utter et al., Phys. Rev. A 67, 012508 (2003)

74 ATOMIC AND MOLECULAR PHYSICS↗

Carriers confinement study of GaNAsBi/GaAs QWs emitting at 1.3 and 1.55 μm

Band structures of GaN{sub 0.58y}As{sub 1–1.58y}Bi{sub y}/GaAs quantum wells (QWs) were studied using the band anticrossing model and the envelope function approximation. The confined states energies and the oscillator strengths of interband transitions were determined for well widths L{sub W} and Bi composition y varying in the range of 4–10 nm and 0–0.07 respectively. The emissions 1.3 and 1.55 μm were reached for specific couples (L{sub W}, y). The band anticrossing effect on the in-plane carriers effective mass has been investigated at k = 0. The absorbance spectra were calculated for QWs operating at 1.3 and 1.55 μm.

36 MATERIALS SCIENCE↗

Quantum kinetics of anomalous and nonlinear Hall effects in topological semimetals

Highlights: • Linear and photogalvanic anomalous Hall responses are systematically derived. • Extrinsic mechanisms of AHE include Gaussian, diffractive, hybrid skew scattering. • Diagrammatic calculations are matched to semiclassical picture of AHE. • The Pancharatnam phase of multifold fermions determines the skew scattering amplitude. • Photon-induced interband scattering are accompanied by coordinate shifts. We present a systematic microscopic derivation of the semiclassical Boltzmann equation for band structures with the finite Berry curvature based on Keldysh technique of nonequilibrium systems. In the analysis, an AC electrical driving field is kept up to quadratic order, and both cases of small and large frequencies corresponding to intra- and interband transitions are considered. In particular, this formulation is suitable for the study of nonlinear Hall effect and photogalvanic phenomena. The role of impurity scattering is carefully addressed. Specifically, in addition to previously studied side-jump and skew-scattering processes, quantum interference diffractive contributions are now explicitly incorporated within the developed framework. This theory is applied to multifold fermions in topological semimetals, for which the generic formula for the skew scattering rate from the Pancharatnam phase is obtained along with the corresponding anomalous Hall conductivity.

36 MATERIALS SCIENCE↗

Emission and Absorption Spectroscopy of Carbon Arc Plasma during Formation of Carbon Magnetic Encapsulates

Plasma diagnostics of carbon arc discharge under conditions of carbon magnetic encapsulates formation was performed by emission and absorption spectroscopy. Content of C{sub 2} and Fe species, rotational temperatures of excited (d {sup 3} product {sub g}) and non-excited (a {sup 3} product {sub u}) states, and excitation temperatures of a {sup 5}F and a {sup 3}F levels relatively to the a {sup 5}D level of Fe atoms were determined. The results pointed to a non-equilibrium state of carbon arc plasma under prevailing discharge conditions.

74 ATOMIC AND MOLECULAR PHYSICS↗

Spectrometric analysis of different fluorophosphate glasses doped with Sm{sup 3+} ions for reddish-orange laser emission

Optical properties of Sm{sup 3+} doped different fluorophosphate glasses have been synthesized and discussed. The J- O intensity parameters Ω{sub λ} (λ= 2, 4, 6) from absorption spectra have been evaluated. No sharp edges are found in the absorption spectra, which confirm amorphous nature of present glass matrices. Various radiative parameters have been obtained from luminescence spectra for excited states to corresponding {sup 4}G{sub 5/2}→{sup 6}H{sub 5/2}, {sup 6}H{sub 7/2}, {sup 6}H{sub 9/2} and {sup 6}H{sub 11/2} transitions. The nature of decay curve analysis was performed for the {sup 4}G{sub 5/2} level. These glasses are expected to give interesting application in field of optical devices.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Mid-IR reflectance spectrum of multilayer graphene: Influence of adsorbate at the graphene – substrate interface

Water adsorbate at the interface between graphene and SiO{sub 2}/Si substrate is found to affect the reflectance spectra of (3 – 6)-layer graphene in the mid-IR range (λ = 2 – 16 μm). The sample under study was previously kept in acetone vapour to remove water adsorbate from the graphene – substrate interface. The graphene reflectance in the range of 8 – 16 μm tends to decrease with recovery of water adsorbate layer at the graphene – substrate interface at room temperature and relative air humidity RH = 40 % – 60 %. The observed effect is most likely caused by the blue shift of the absorption edge at interband transitions due to the change in the Fermi level position in the graphene valence band under the influence of the charge induced in graphene by the water adsorbate film. (paper)

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Effect of nearest-neighbor ions on excited ionic states, emission spectra, and line profiles in hot and dense plasmas

The effect of the cylindrical symmetry imposed by the nearest-neighbor ions on the ionic levels and the emission spectra of a Li-like Kr ion immersed in hot and dense plasmas is investigated using the Stein et al. (1989) two-centered model extended to include computations of the line profiles, shifts, and widths, as well as the energy-level mixing and the forbidden transition probabilities. It is shown that the cylindrical symmetry mixes states with different orbital quantum numbers l, particularly for highly excited states, and, thereby, gives rise to forbidden transitions in the emission spectrum. Results are obtained for the variation of the ionic level shifts and mixing coefficients with the distance to the nearest neighbor. Also obtained are representative computed spectra that show the density effects on the spectral line profiles, shifts, and widths, and the forbidden components in the spectrum.

Salzmann, D.↗

Optical coherence and energy-level properties of a Tm 3+ -doped LiNbO 3 waveguide at subKelvin temperatures

We characterize the optical coherence and energy-level properties of the 795-nm 3 H 6 to 3 H 4 transition of Tm 3+ in a Ti 4+ :LiNbO 3 waveguide at temperatures as low as 0.65 K. Coherence properties are measured with varied temperature, magnetic field, optical excitation power and wavelength, and measurement timescale. We also investigate nuclear spin-induced hyperfine structure and population dynamics with varying magnetic field and laser excitation power. Except for accountable differences due to different Ti 4+ - and Tm 3+ -doping concentrations, we find that the properties of Tm 3+ :Ti 4+ :LiNbO 3 produced by indiffusion doping are consistent with those of a bulk-doped Tm 3+ :LiNbO 3 crystal measured under similar conditions. Furthermore, our results, which complement previous work in a narrower parameter space, support using rare-earth ions for integrated optical and quantum signal processing.

74 ATOMIC AND MOLECULAR PHYSICS↗

Radiative Electronic Bound States in the Continuum from Defects in Semiconductors

Continuum-buried defect states in semiconductors are generally expected to be optically inactive because of their strong coupling to continuum bands. Here, we show that such defects can instead host radiative electronic bound states in the continuum (BICs) using the silicon G center as a prototypical example. Hybrid functional first-principles calculations with a Hubbard U correction reveal that a localized defect state, initially buried below the valence band maximum (VBM) in the ground state, undergoes exchange-driven energy-level reordering under optical excitation and shifts above the VBM. This exchange-induced transition suppresses nonradiative decay and enables a robust radiative emission. By computing temperature-dependent nonradiative lifetimes and comparing them to experimental photoluminescence (PL) lifetimes, we quantitatively reproduce the observed temperature dependence of the emission. These results uncover a stabilization mechanism for continuum-embedded defect states and establish electronic BICs as a general paradigm for designing defect-based optical systems, including quantum emitters and qubits.

Hong, SeongYun↗

On the Asymmetric Generation of a Superradiant Laser with a Symmetric Low-Q Cavity

On the basis of numerical solution to the Maxwell–Bloch equations within the one-dimensional two-level model of a superradiant laser with a symmetric cavity in which the photon lifetime is less than the incoherent relaxation time of the optical-dipole oscillations of active centers, the phenomenon of the spontaneous asymmetric generation of counter-propagating waves under continuous uniform pumping of the active medium is revealed. It is shown that the observed symmetry breaking of the spatial profiles of counter-propagating waves of the electromagnetic field and, the polarization and inversion of the population of active-medium levels in the case of a small inhomogeneous broadening of the spectral line of its working transition occurs due to the asymmetric half-wave nonlinear grating of inversion of the energy-level population produced by these waves.

72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS↗

New metal atom laser transitions in As, Bi, Ga, Ge, Hg, In, Pb, Sb, and Tl

A double discharge technique was used in the investigation. An initial discharge established between parallel arrays of tungsten pin electrodes was followed, after a variable time delay, by a high voltage (180 kV), short duration (50 nsec) secondary discharge between two aluminum main electrodes. Metal compounds, including metal alkyls, hydrides, and halides, were used to obtain the required metal atom concentrations. Twenty-four new laser transitions involving 9 different metal atoms were observed. The observed relations are shown in a number of partial energy-level diagrams.

Chou, M. S.↗

Carbon-related donor–acceptor pair transition in the infrared in h-BN

Experimental studies of intentionally doped impurities for the understanding of conductivity control in hexagonal boron nitride (h-BN) ultrawide bandgap (UWBG) semiconductor are limited but are highly desired for emerging applications of h-BN. We report synthesis by hydride vapor phase epitaxy and comparison photoluminescence (PL) emission spectroscopy studies of intentionally carbon (C)-doped and undoped h-BN semi-bulk crystals. In addition to the well-known C-related emission lines observed previously, a C-impurity-related transition near 1.31 eV consisting of multiple phonon replicas has been observed in C-doped h-BN at room temperature. Phonon replicas involved in the 1.31 eV emission have been identified using polarization resolve PL spectroscopy as the transverse acoustic (TA)/longitudinal acoustic (LA) and out-of-plane optical phonon (ZO) modes at the middle point, T, between the Γ- and K-points in the first Brillouin zone. Based on the agreement between the spectral peak position of the observed dominant emission line at 1.31 eV and the calculated energy-level separation between CB donor (carbon replacing boron) and Ci acceptor (carbon interstitial), the observed IR emission line can be decisively assigned to the donor–acceptor pair (DAP) transition involving the CB donor and Ci acceptor assisted by the intervalley (Κ → Μ) scattering processes. The results reinforce the perception that C impurities form deep-level centers and provided an improved understanding of C impurities in h-BN.

Physics↗

Spin-coupling topology in the copper hexamer compounds A 2 Cu 3 O(SO 4 ) 3 ( A =Na, K)

The compounds A 2 Cu 3 O(SO 4 ) 3 (A=Na,K) are characterized by copper hexamers that are weakly coupled to realize antiferromagnetic order below TN≈3K. They constitute quantum spin systems with S=1 triplet ground states. In this work, we investigated the energy-level splittings of the copper hexamers by inelastic neutron scattering experiments covering the entire range of the magnetic excitation spectra. Additionally, the observed transitions are governed by very unusual selection rules that we ascribe to the underlying spin-coupling topology. This is rationalized by model calculations that allow an unambiguous interpretation of the magnetic excitations concerning both the peak assignments and the nature of the spin-coupling parameters.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

First detection of the O-18 isotope of methanol

Interstellar CH3(O-18)H has been detected using NASA's 70-m antenna at Tidbinbilla. The 2(0)-3(-1) transition at 11.6 GHz was detected in absorption at two positions in the direction of Sgr B2. The profile shapes were similar to those for the corresponding transitions of CH3OH and (C-13)H3OH, containing velocity components centered near 64 and 80 km/s. Abundance ratios were derived using the simplest assumptions. The O-16/O-18 ratio was 210 + or - 40; the value would be larger after correction for radiation trapping but still well below the terrestrial value of 489. The (C-13)H3OH/CH3(O-18)H ratio was 7.5 + or - 1.0, above the value (5.5) derived from terrestrial C-12/C-12 and O-16/O-18 ratios, but close to the isotope abundance ratio (9.0) determined from formaldehyde observations. In view of the complexity of the methanol energy-level diagram, the similarity suggests that excitation of the lowest energy levels is largely collisional.

Gardner, F. F.↗

Raman Laser-Induced Structural Modification in CVD-Grown Monolayer MoS 2 for Multi-Purposed Nanofabrication

Molybdenum disulfide (MoS 2 ) has been extensively explored to be utilized as an electronic material in a variety of device applications. In particular, the tunability of MoS 2 enhances its electrical properties making it an intriguing candidate for field-effect transistors (FETs), while also extending beyond electrical properties to structural phase engineering. Laser-induced modifications, particularly with Raman lasers, offer a straightforward method to modulate materials via thermal processes with precise patterning control and energy-level flexibility. However, most studies on the modification of MoS 2 have focused on multilayered structures or have been conducted under low-power laser conditions, leaving the feasibility of structural modifications in monolayer MoS 2 elusive. In this study, we fundamentally elucidated the effects of high-power Raman laser irradiation on the surface of chemical vapor deposition (CVD)-grown monolayer MoS 2 under ambient conditions and uncovered the underlying mechanisms of laser-induced modifications by applying intense photon energy with highly interactive reactions. Our results revealed both etching and deposition phenomena in two discernible regions, and it can be demonstrated by intensity regimes based on the spatial distribution of laser irradiance within the laser-irradiated spot. Furthermore, phase transition was found to be inhibited due to the promoted oxidation and the deposition of hydrogenated amorphous carbon (a-C:H), and p-type doping was observed, likely occurring in the region beneath the a-C:H deposition as substitutional doping on the 2H phase of MoS 2 . To compare the thermal effects, MoS 2 modifications were further analyzed using simplified heat transfer estimations. In conclusion, these findings deepen our understanding of how Raman laser irradiation modifies MoS 2 under ambient conditions, providing guidelines for optimizing its modification processes.

36 MATERIALS SCIENCE↗

Fermi-Level Engineering of Nitrogen Core-Doped Armchair Graphene Nanoribbons

Substitutional heteroatom doping of bottom-up engineered 1D graphene nanoribbons (GNRs) is a versatile tool for realizing low-dimensional functional materials for nanoelectronics and sensing. Previous efforts have largely relied on replacing C–H groups lining the edges of GNRs with trigonal planar N atoms. This type of atomically precise doping, however, only results in a modest realignment of the valence band (VB) and conduction band (CB) energies. Here, we report the design, bottom-up synthesis, and spectroscopic characterization of nitrogen core-doped 5-atom-wide armchair GNRs (N2-5-AGNRs) that yield much greater energy-level shifting of the GNR electronic structure. Here, the substitution of C atoms with N atoms along the backbone of the GNR introduces a single surplus π-electron per dopant that populates the electronic states associated with previously unoccupied bands. First-principles DFT-LDA calculations confirm that a sizable shift in Fermi energy (∼1.0 eV) is accompanied by a broad reconfiguration of the band structure, including the opening of a new band gap and the transition from a direct to an indirect semiconducting band gap. Scanning tunneling spectroscopy (STS) lift-off charge transport experiments corroborate the theoretical results and reveal the relationship among substitutional heteroatom doping, Fermi-level shifting, electronic band structure, and topological engineering for this new N-doped GNR.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗