SEARCH · Engineering Papers

Results for “EMITTER”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

SourceResearch connectionFrom yearThrough year

Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.

At least 19 records

All sources NASA NTRS DOE OSTI

DOE OSTI2026

Experimental longitudinal emittance manipulation using laser-based photoionization in the Fermilab Linac

A series of simulations and beam studies were conducted at Fermilab’s linear accelerator to evaluate the effectiveness of longitudinal emittance control via laser-induced photoionization. While similar laser techniques have been employed at Fermilab to enhance injection and extraction efficiency into the Booster, the work presented here focuses on extending these methods to bunch-by-bunch manipulation. This approach utilizes fine-scale correction of the H- bunches’ longitudinal spatial distribution. In theory, loosely confined particles in longitudinal phase space contribute to emittance growth during acceleration. By selectively removing these outlying particles through laser scraping (H- + γ → H + e-), this growth can be reduced. This report presents experimental results from both symmetric and asymmetric longitudinal scraping of H⁻ bunches in the Fermilab linac, which were subsequently injected into Booster, and evaluates the broader applicability of this method for future high-intensity accelerator operations.

Landon, Parker [Boston U.; Fermilab]↗

DOE OSTI2025

LAMP Emittance Budget, Rev. 1

This report summarizes the performance limits of the LANSCE Coupled-Cavity Linac (CCL). These results are captured or summarized directly from the references cited. This report was written in support of the LANSCE Modernization Project (LAMP). This brief report summarizes the emittance budget for the LANSCE Modernization Project (LAMP). While the project Key Performance Parameters (KPPs) specify threshold and objective requirements for charge delivered to each experimental area, no upper limits on beam emittances are specified. To maintain low losses in the high-energy section of the LANSCE linac and hands-on maintenance, some upper limits on beam emittance need to be specified for the new LAMP front-end performance. The scope of the LAMP project replaces the injector section and drift-tube linac (DTL) up to 100 MeV of the existing LANSCE linac. This new design replacement will be integrated with the remaining coupled cavity linac (CCL) which makes up most of the accelerator at LANSCE and accelerates the beam to a final energy of 800 MeV. The initial approach that has been used to define an emittance budget for the new LAMP front end is based on recent and historical measured beam emittances at 100 MeV for the three beam types accelerated at LANSCE: H+ (protons for isotope production), LBEG (H- beam for delivery to proton radiography and to the Lujan neutron spallation target, and MPEG (H- beam for delivery to the Weapons Neutron Research facility). The emittance budget (upper limit) for each beam type has been selected to maintain the losses in the CCL to a level approximately equivalent to those observed in present operations to first order. However, the goal of the LAMP project is to improve the quality of the beams injected into the CCL, if possible, thus allowing for higher average current operation while also lowering beam losses and activation at high beam energies. The table below summarizes the beam measurements evaluated and used to establish a conservative emittance budget for LAMP based on known historical beam losses and activation. However, based on estimates of the CCL admittance and the Isotope Production Facility (IPF) beamline acceptance, a more relaxed transverse emittance upper limit of 0.095 π-cm-mrad, rms, normalized may be acceptable at 100 MeV while still meeting the LAMP performance requirements for charge delivery to each LANSCE experimental area and maintaining hands-on maintenance. This upper limit is supported by a recent analysis of operational data. Additionally, the present conceptual LAMP front-end design meets this requirement.

43 PARTICLE ACCELERATORS↗

DOE OSTI2024

Emittance preservation for the electron arm in a single PWFA-LC stage using quasi-adiabatic plasma density ramp matching sections

Plasma-based acceleration (PBA) is being considered for a next generation linear collider (LC). In some PBA-LC designs for the electron arm, the extreme beam parameters are expected to trigger background ion motion within the witness beam, which can lead to longitudinally varying nonlinear focusing forces and result in an unacceptable emittance growth of the beam. To mitigate this, we propose to use quasi-adiabatic plasma density ramps as matching sections at the entrance and exit of each stage. We match the witness electron beam to the low density plasma entrance, where the beam initially has a large matched spot size so the ion motion effects are relatively small. As the beam propagates in the plasma density upramp, it is quasi-adiabatically focused, and its distribution maintains a non-Gaussian equilibrium distribution in each longitudinal slice throughout the process, even when severe ion collapse has occurred. This only causes small amounts of slice emittance growth. The phase mixing between slices with different betatron frequencies leads to additional projected emittance growth within the acceleration stage. A density downramp at the exit of an acceleration section can eliminate much of the slice and projected emittance growth as the beam and ion motion adiabatically defocuses and decreases, respectively. Simulation results from QuickPIC with Azimuthal Decomposition show that within a single acceleration stage with a 25 GeV energy gain, this concept can limit the projected emittance growth to only ∼2% for a 25 GeV, 100 nm emittance witness beam and ∼20% for a 100 GeV, 100 nm normalized emittance witness beam. The trade-off between the adiabaticity of the plasma density ramp and the initial ion motion at the entrance for a given length of the plasma density ramp is also discussed.

Physics↗

DOE OSTI2025

Nanometer Resolution Structure‐Emission Correlation of Individual Quantum Emitters via Enhanced Cathodoluminescence in Twisted Hexagonal Boron Nitride

Understanding the atomic structure of quantum emitters, often originating from point defects or impuritie, is essential for designing and optimizing materials for quantum technologies such as quantum computing, communication, and sensing. Despite the availability of atomic-resolution scanning transmission electron microscopy and nanoscale cathodoluminescence microscopy, experimentally determining the atomic structure of individual emitters is challenging due to the conflicting needs for thick samples to generate strong cathodoluminescence signals and thin samples for structural analysis. To overcome this challenge, significantly enhanced cathodoluminescence at twisted interfaces is leveraged to achieve sub-nanometer localization precision for the first time in mapping individual quantum emitters in carbon-implanted hexagonal boron nitride. This unprecedent spatial sensitivity, together with correlative electron energy loss spectroscopy quantitative scanning transmission electron microscopy imaging, and first principles density functional theory calculations, enables the identification of the atomic structure of the 440 nm blue emitter in hexagonal boron nitride as a substituted vertical carbon dimer. Building on the atomic structure insights, nanoscale spatially precise creation of blue emitters is demonstrated by electron beam irradiation of carbon-coated hexagonal boron nitride. This advancement in correlating atomic structures with optical properties lays the foundation for a deeper understanding and precise engineering of quantum emitters, significantly advancing the development of cutting-edge quantum information technologies.

2D material↗

DOE OSTI2024

Characterization of quantum dot-like emitters in programmable arrays of nanowrinkles of 1L-WSe2

When combined with nanostructured substrates, two-dimensional semiconductors can be engineered with strain to tailor light–matter interactions on the nanoscale. Recently, room-temperature nanoscale exciton localization with controllable wrinkling in 1L-WSe2 was achieved using arrays of gold nanocones. Here, the characterization of quantum dot-like states and single-photon emitters in the 1L-WSe2/nanocone system is reported. The nanocones induce a wide range of strains, and as a result, a diverse ensemble of narrowband, potential single-photon emitters is observed. The distribution of emitter energies reveals that most reside in two spectrally isolated bands, leaving a less populated intermediate band that is spectrally isolated from the ensembles. The spectral isolation is advantageous for high-purity quantum light emitters, and anti-bunched emission from one of these states is confirmed up to 25 K. Although the spatial distribution of strain is expected to influence the orientation of the transition dipoles of the emitters, multimodal emission polarization anisotropy and atomic force microscopy reveal that the macroscopic orientation of the wrinkles is not a good predictor of dipole orientation. Finally, the emission is found to change with thermal cycling from 4 to 290 K and back to 4 K, highlighting the need to control factors such as temperature-induced strain to enhance the robustness of this quantum emitter platform. The initial characterization here shows that controlled nanowrinkles of 1L-WSe2 generate quantum light in addition to uncovering potential challenges that need to be addressed for their adoption into quantum photonic technologies.

Physics↗

DOE OSTI2026

Experimental demonstration of accelerating a beam with a large transverse emittance ratio in the relativistic heavy ion collider for the electron-ion collider

The electron-ion collider (EIC), to be constructed at Brookhaven National Laboratory, will collide polarized high-energy electron beams with hadron beams, achieving luminosities of up to 1.0 × 10 34 cm −2 s −1 in the center-of-mass energy range of 20–140 GeV. To reach such high luminosity, the EIC will employ small, flat beams at the interaction point. According to the design of the EIC hadron storage ring (HSR), hadron beams with a large transverse emittance ratio of 11:1 will be generated at the injection energy using an electron cooling technique and then accelerated to high energies for collisions. Accelerating hadron beams with such a large emittance ratio had never been demonstrated elsewhere—until our recent beam experiment at the relativistic heavy ion collider (RHIC). In this experiment, we successfully generated a large transverse emittance ratio of 13:1 with a gold-ion beam at 31 GeV/nucleon using stochastic cooling. We then accelerated this beam, with a transverse emittance ratio of 11:1, from 31 to 100 GeV/nucleon. Thanks to RHIC’s high-performance orbit, tune, and decoupling feedback systems, the large emittance ratio was well maintained throughout the 5-min-long acceleration process. This experiment fully validated the EIC/HSR design assumptions—namely, that large-emittance-ratio hadron beams can be generated at injection energy and then accelerated to high energies for collisions.

73 NUCLEAR PHYSICS AND RADIATION PHYSICS↗

DOE OSTI2025

Benchmarking the Use of BPM Quadrupole Moments to Measure Emittance

For the PIP-II program, transverse emittance in the Fermilab Booster must remain well controlled at higher bunch intensities. 4-plate beam position monitors (BPMs) have a small but measurable quadrupole moment, making it possible to infer transverse emittance. By compositing many BPMs together, it becomes possible to improve the quality of the quadrupole signal. The Fermilab Booster BPM system has been used to measure these quadrupole moments in the past year and derive emittances from them. Recent benchmarks show that the derived BPM emittances show similar emittance evolution and value to IPM and Multiwire data. This approach can both supplement and complement existing non-intercepting emittance monitors in accelerators.

Balcewicz, M. A. [Fermilab]↗

DOE OSTI2025

Benchmarking the Use of BPM Quadrupole Moments to Measure Emittance

Balcewicz, Michael A. [Fermilab] (ORCID:0009000557↗

DOE OSTI2024

Programmable quantum emitter formation in silicon

Abstract Silicon-based quantum emitters are candidates for large-scale qubit integration due to their single-photon emission properties and potential for spin-photon interfaces with long spin coherence times. Here, we demonstrate local writing and erasing of selected light-emitting defects using femtosecond laser pulses in combination with hydrogen-based defect activation and passivation at a single center level. By choosing forming gas (N 2 /H 2 ) during thermal annealing of carbon-implanted silicon, we can select the formation of a series of hydrogen and carbon-related quantum emitters, including T and C i centers while passivating the more common G-centers. The C i center is a telecom S-band emitter with promising optical and spin properties that consists of a single interstitial carbon atom in the silicon lattice. Density functional theory calculations show that the C i center brightness is enhanced by several orders of magnitude in the presence of hydrogen. Fs-laser pulses locally affect the passivation or activation of quantum emitters with hydrogen for programmable formation of selected quantum emitters.

36 MATERIALS SCIENCE↗

DOE OSTI2025

Deterministic fabrication of highly reproducible monochromatic quantum emitters in hexagonal boron nitride

Quantum emitters in hexagonal boron nitride are important room temperature single-photon sources. However, conventional fabrication methods yield quantum emitters with dispersed and inconsistent spectral profiles, limiting their potential for practical quantum applications, which demand reproducible high quality single-photon sources. Here, we report the deterministic creation of highly reproducible monochromatic quantum emitters by applying carbon-ion implantation on freestanding hexagonal boron nitride flakes, while a carbon mask with suitable thickness was adapted to optimize the implantation results. Quantum emitters fabricated using this approach exhibited thermally limited monochromaticity, with an emission center wavelength of 590.7 ± 2.7 nm, a narrow full width at half maximum of 7.1 ± 1.7 nm, an emission rate of 1 MHz without optical engineering, and exceptional stability under ambient conditions. Density functional theory calculations and scanning transmission electron microscopy suggest that these emitters are comprised of boron centered carbon tetramers. This method provides a reliable single-photon source for optical quantum computing and potential future industry-scale applications.

Hua, Muchuan [Argonne National Laboratory (ANL), A↗

DOE OSTI2025

Single‐photon emitters in PECVD‐grown silicon nitride films: from material growth to photophysical properties

Abstract Silicon nitride (SiN) is a key material for quantum photonics due to its wide transparency window, high refractive index, low optical losses, and semiconductor foundry compatibility. We study the formation of single‐photon emitters in SiN films grown by plasma‐enhanced chemical vapor deposition (PECVD), exploring their photophysical properties and dependence on growth conditions. Emitters were observed across the entire range of nitrogen‐to‐silicon precursor ratios, from silicon‐rich to nitrogen‐rich conditions, enabled by the low background fluorescence. We demonstrate single‐photon emitters in SiN films with a higher refractive index (1.8–1.9) compared to our previous reports (∼1.7). Notably, nitrogen‐rich, thinner films yield particularly bright emitters with shorter emission lifetimes, likely due to more efficient annealing. Silicon‐rich SiN films exhibit red‐shifted emission, suggesting that composition may provide a mechanism for wavelength tuning. These findings establish the feasibility of emitters formation in foundry standard PECVD tools, advancing the scalability and lab‐to‐fab transition of SiN‐based quantum photonic technologies.

Materials Science↗

DOE OSTI2024

Fermilab Booster Beam Emittances from Quadrupole Modes Measured BPMs

The measurement of beam emittances by extracting the quadrupole mode signal from a 4 plate beam position monitor (BPM) was published at least 40 years ago. Unfortunately, in practice, this method suffers from poor signal to noise ratio and requires a lot of tuning to extract out the emittances. In this paper, an improved method where multiple BPMs are used together with better mathematical analysis is described. The BPM derived emittances are then compared with those measured by the Ion Profile Monitor (IPM). Surprisingly, the BPM measured emittances behave very well and are more realistic than those measured by the IPM.

43 PARTICLE ACCELERATORS↗

DOE OSTI2024

Fermilab Booster Beam Emittances from Quadrupole Modes Measured by BPMs

43 PARTICLE ACCELERATORS↗

DOE OSTI2025

Single photon emitters in van der Waals solids for quantum photonics: materials, theory and molecular-scale characterization probes

Strong light–matter interactions in two-dimensional layered materials (2D materials) have attracted the interest of researchers from interdisciplinary fields for more than a decade now. A unique phenomenon in some 2D materials is their large exciton binding energies (BEs), increasing the likelihood of exciton survival at room temperature. It is this large BE that mediates the intense light–matter interactions of many of the 2D materials, particularly in their monolayer limit, where the interplay of excitonic phenomena poses a wealth of opportunities for high-performance optoelectronics and quantum photonics. Within quantum photonics, quantum information science (QIS) is growing rapidly, where photons are a promising platform for information processing due to their low-noise properties, excellent modal control, and long-distance propagation. A central element for QIS applications is a single photon emitter (SPE) source, where an ideal on-demand SPE emits exactly one photon at a time into a given spatiotemporal mode. Recently, 2D materials have shown practical appeal for QIS which is directly driven from their unique layered crystalline structure. This structural attribute of 2D materials facilitates their integration with optical elements more easily than the SPEs in conventional three-dimensional solid state materials, such as diamond and SiC. In this review article, we will discuss recent advances made with 2D materials towards their use as quantum emitters, where the SPE emission properties maybe modulated deterministically. Here, the use of unique scanning tunneling microscopy tools for the in-situ generation and characterization of defects is presented, along with theoretical first-principles frameworks and machine learning approaches to model the structure-property relationship of exciton–defect interactions within the lattice towards SPEs. Given the rapid progress made in this area, the SPEs in 2D materials are emerging as promising sources of nonclassical light emitters, well-poised to advance quantum photonics in the future.

2D layered materials↗

DOE OSTI2024

InAs Terahertz Metalens Emitter for Focused Terahertz Beam Generation

Metasurfaces have opened doors to combining multiple photonic functionalities in a single compact device. In particular, the ability to generate short terahertz (THz) pulses with precise wavefront engineering in a single THz metasurface redefined the role metasurfaces can play in THz systems. Here, an InAs metalens emitter which generates and focuses a THz pulse beam is demonstrated using a 130 nm thick InAs metasurface designed as a binary‐phase Fresnel zone plate. The THz beam is focused to a spot of ≈430 μm at 1 THz with a short focal length of 5 mm and large numerical aperture of 0.5. Nanoscale InAs Mie resonators comprising the metasurface enable THz generation with an amplitude as high as 20 times compared to plasmonic THz emitters and several times compared to a 1 mm thick ZnTe crystal. This InAs metasurface emitter provides a new paradigm for designing THz imaging, spectroscopy, and communication systems, where THz beam generation and shaping are performed with a single device without compromising the generation efficiency, while eliminating losses and avoiding limitations of phase matching of conventional nonlinear optics approaches.

47 OTHER INSTRUMENTATION↗

DOE OSTI2024

THz generation by exchange-coupled spintronic emitters

Abstract The mechanism of THz generation in ferromagnet/metal (F/M) bilayers has been typically ascribed to the inverse spin Hall effect (ISHE). Here, we fabricated Pt/Fe/Cr/Fe/Pt multilayers containing two back-to-back spintronic THz emitters separated by a thin ( t Cr ≤ 3nm) wedge-shaped Cr spacer. In such an arrangement, magnetization alignment of the two Fe films can be controlled by the interplay between Cr-mediated interlayer exchange coupling (IEC) and an external magnetic field. This in turn results in a strong variation of the THz amplitude A , with A ↑ ↓ reaching up to 14 times A ↑ ↑ (arrows indicate the relative alignment of the magnetization of the two magnetic layers). This observed functionality is ascribed to the interference of THz transients generated by two closely spaced THz emitters. Moreover, the magnetic field dependence A ( H ) shows a strong asymmetry that points to an additional performance modulation of the THz emitter via IEC and multilayer design.

Adam, Roman↗

DOE OSTI2024

Rational design of efficient defect-based quantum emitters

Single-photon emitters are an essential component of quantum networks, and defects or impurities in semiconductors are a promising platform to realize such quantum emitters. Here, we present a model that encapsulates the essential physics of coupling to phonons, which governs the behavior of real single-photon emitters, and critically evaluate several approximations that are commonly utilized. Emission in the telecom wavelength range is highly desirable, but our model shows that nonradiative processes are greatly enhanced at these low photon energies, leading to a decrease in efficiency. Our results suggest that reducing the phonon frequency is a fruitful avenue to enhance the efficiency.

Optics↗

DOE OSTI2025

Energy transfer between localized emitters in photonic cavities from first principles

Radiative and nonradiative resonant couplings between defects are ubiquitous phenomena in photonic devices used in classical and quantum information technology applications. In this work, we present a first-principles approach to enable quantitative predictions of the energy transfer between defects in photonic cavities, beyond the dipole-dipole approximation and including the many-body nature of the electronic states. As an example, we discuss the energy transfer from a dipolelike emitter to an 𝐹 center in MgO in a spherical cavity. We show that the cavity can be used to controllably enhance or suppress specific spin-flip and spin-conserving transitions. Specifically, we predict that an ∼10–100 enhancement in the resonant energy transfer rate can be gained in the case of the 𝐹 center in MgO at ∼10 nm distances from a dipolar source, using rather moderate cavity with quality factor 𝑄 ∼ 400. We also show that a similar suppression in the transfer rate can be achieved by off-tuning the cavity resonance relative to the emitter transition energy. The framework presented here is general and readily applicable to a wide range of devices where localized emitters are embedded in microspheres, core-shell nanoparticles, and dielectric Mie resonators. Hence, our approach paves the way to predict how to control energy transfer in quantum memories and in ultrahigh-density optical memories, and in a variety of quantum information platforms.

First-principles calculations↗