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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 19 records
All sourcesNASA NTRSDOE OSTI
DOE OSTI2022

Structural and Electronic Transitions in Liquid FeO Under High Pressure

Abstract FeO represents an important end‐member for planetary interiors mineralogy. However, its properties in the liquid state under high pressure are poorly constrained. Here, in situ high‐pressure and high‐temperature X‐ray diffraction experiments, ab initio simulations, and thermodynamic calculations are combined to study the local structure and density evolution of liquid FeO under extreme conditions. Our results highlight a strong shortening of the Fe‐Fe distance, particularly pronounced between ambient pressure and ∼40 GPa, possibly related with the insulator to metal transition occurring in solid FeO over a similar pressure range. Liquid density is smoothly evolving between 60 and 150 GPa from values calculated for magnetic liquid to those calculated for non‐magnetic liquid, compatibly with a continuous spin crossover in liquid FeO. The present findings support the potential decorrelation between insulator/metal transition and the high‐spin to low‐spin continuous transition, and relate the changes in the microscopic structure with macroscopic properties, such as the closure of the Fe‐FeO miscibility gap. Finally, these results are used to construct a parameterized thermal equation of state for liquid FeO providing densities up to pressure and temperature conditions expected at the Earth's core‐mantle boundary.

Morard, Guillaume↗
DOE OSTI2025

Coupling of electronic transition to ferroelectric order in a 2D semiconductor

A ferroelectric material often exhibits a soft transverse optical (TO) phonon mode which governs its phase transition. Charge coupling to this ferroelectric soft mode may further mediate emergent physical properties, including superconductivity and defect tolerance in semiconductors. However, direct experimental evidence for such coupling is scarce. Here we show that a photogenerated coherent phonon couples strongly to the electronic transition above the bandgap in the van der Waals (vdW) two-dimensional (2D) ferroelectric semiconductor NbOI 2 . Using terahertz time-domain spectroscopy and first-principles calculations, we identify this mode as the TO phonon responsible for ferroelectric order. This exclusive coupling occurs only with the above-gap electronic transition and is absent in the valence band as revealed by resonant inelastic X-ray scattering. Our findings suggest a new role of the soft TO phonon mode in electronic and optical properties of ferroelectric semiconductors.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Fluctuating Ru trimer precursor to a two-stage electronic transition in RuP

Superconductivity in binary ruthenium pnictides occurs proximal to and upon suppression of a non-magnetic ground state, preceded by a pseudogap phase associated with Fermi surface instability, and its critical temperature, T c , is maximized around the pseudogap quantum critical point. By analogy with isoelectronic iron based counterparts, antiferromagnetic fluctuations became ''usual suspects" as putative mediators of superconducting pairing. Here we report on a high temperature local symmetry breaking in RuP, nonsuperconducting parent of the maximum- T c branch of these novel superconductors, revealed by combined nanostructure-sensitive powder and single crystal X-ray total scattering analyses. Large local distortions of Ru chains associated with orbital-charge trimerization, further assembled into hexamers, exist above the two-stage electronic transition in RuP. In the pseudogap regime the precursors order with distortions retaining their strength, whereas they acquire spin-singlet characteristics which dramatically enhances the distortion as the nonmagnetic ground state establishes. The precursors enable the nonmagnetic ground state and presumed complex oligomerization, and the relevance of pseudogap fluctuations for superconductivity emerges as a distinct prospect. As a transition metal system in which partial d-manifold filling combined with high crystal symmetry promotes electronic instabilities, this represents a further example of local electronic precursors underpinning the macroscopic collective behavior of quantum materials.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2023

Effect of electronic transitions on near edge optical properties of off-stoichiometric boron carbide thin films

In the present study, soft x-ray optical properties of off-stoichiometric boron carbide thin films are investigated, and the structure and chemical composition of the film is analyzed using angle dependent x-ray reflectivity and x-ray photoelectron spectroscopy techniques. Energy dependent soft x-ray reflectivity measured at a fixed grazing angle of 1.5° is used to determine the optical constants in the boron K edge region by applying the Kramers–Kronig technique. The measured optical constants show near edge fine features corresponding to σ* and π* resonances. Furthermore, the electronic transitions corresponding to σ* resonance cause a 40%–75% increase in the delta value in the above boron K edge region. The π* transitions corresponding to off-stoichiometric nature of the boron carbide are observed in the absorption spectra near ~ 192.7 eV. Details of the measured soft x-ray optical properties of the off-stoichiometric boron carbide thin film are discussed.

36 MATERIALS SCIENCE↗
DOE OSTI2024

La 0.6 Sr 0.4 CoO 3−δ Films Under Deoxygenation: Magnetic And Electronic Transitions Are Apart from The Structural Phase Transition

Abstract Topotactic phase transitions induced by changes in the oxygen vacancy concentration can largely alter the physical properties of complex oxides, including electronic and magnetic phases, while maintaining the structural integrity of the crystal lattice. An oxygen‐vacancy‐induced topotactic phase transition from perovskite (PV) to brownmillerite (BM) is achieved in epitaxial La 0.6 Sr 0.4 CoO 3−δ (LSCO) thin films. Two novel intermediate states with different oxygen content are identified by X‐ray diffraction, which involves a single‐phase reduced PV state and a mixed state of co‐existing PV and BM. The combination of depth‐sensitive polarized neutron reflectometry (PNR) and Rutherford backscattering (RBS) allows a quantitative determination of magnetization and the mean oxygen content in all states, revealing a continuous transition from La 0.6 Sr 0.4 CoO 2.97 to La 0.6 Sr 0.4 CoO 2.5 . BM formation is observed for an LSCO layer with an oxygen content of 2.67, while the magnetic and electronic transition already occurs for a layer with a higher oxygen content of 2.77 (and above) and in the absence of a BM signature. These results demonstrate that the physics of electronic metal‐to‐insulator transition (MIT), magnetic ferromagnet‐to‐non‐ferromagnet transition (FM‐to‐non‐FM), and structural PV‐to‐BM phase transition should be considered within the framework of separate but interrelated processes.

36 MATERIALS SCIENCE↗
DOE OSTI2026

Isostructural electronic transition in MoS 2 probed by solid-state high-harmonic generation spectroscopy

Studying materials under extreme pressure in diamond anvil cells (DACs) is key to discovering emergent states of matter, yet no method currently allows the direct measurement of the electronic structure in this environment. Solid-state high-harmonic generation (sHHG) offers a unique all-optical window into the electronic structure of materials. We demonstrate sHHG spectroscopy inside a DAC by probing 2H-MoS 2 , up to 30 GPa, revealing a pressure-induced crossover of the lowest direct bandgap from the K-point to the Γ-point. This transition manifests as a sharp minimum in harmonic intensity and a 30° rotation of the sHHG polarization anisotropy, despite the absence of a structural phase change. First-principles simulations attribute these features to interference between competing excitation pathways at distinct points in the Brillouin zone. Our results establish sHHG as a sensitive probe of electronic transitions at high pressure, enabling access to quantum phenomena that evade detection by conventional techniques.

Nebgen, Bailey R. [University of California, Berke↗
DOE OSTI2024

Searching for Muon to Electron Transition [Slides]

Summary : Searches for violations of fundamental symmetries and conservation laws - Powerful Probes of physics beyond the Standard Model (BSM); Charged Lepton Flavor violation : Mu to E conversion; 4-orders of magnitude improvements in BR; SD process can dominate the conversion process in ALP models; fa > O(100)TeV can be achieved, complementary role.

73 NUCLEAR PHYSICS AND RADIATION PHYSICS↗
DOE OSTI2024

Electronic topological transitions in cadmium under pressure studied via theoretical and experimental x-ray absorption spectroscopy

Here, an electronic topological transition (ETT) in cadmium below 1 GPa is investigated in situ with experimental x-ray absorption spectroscopy and projecting calculated core-valence excitons onto the band structure. These projections are a useful application of the Bethe-Salpeter equation approach that considers many-body effects. The method described herein can be used for systems that are otherwise difficult to probe in situ; therefore, it provides a generalizable approach to identifying and understanding ETTs under high pressure. Although pressure-induced ETTs are often probed using indirect structural responses, our own x-ray diffraction and Raman studies suggest a second-order structural transition around 3 GPa but are largely insensitive to or inconclusive for the previously studied ETT in this region.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2024

Electronic bonding transitions in oxide glass above two megabar pressures

Inelastic x-ray scattering (IXS) of B 2 O 3 glass up to ∼2.2 Mbar reveals electronic bonding transitions in oxide glasses. B -edge IXS identifies the high-energy feature above ∼1.4 Mbar and a gradual increase in its intensity toward ∼2.2 Mbar, indicating the formation of hypervalent boron via electron polarization to oxygen atoms. The pressure-driven high energy shifts in O -edge IXS indicate pronounced electronic dispersion that increases upon densification of amorphous oxides above ∼2 Mbar. The extent of the energy shifts and enhanced polarization correlate with increasing atomic radius of cation in oxide glass, establishing the role of cation radius in electronic structures of amorphous oxides under compression. The results elucidate the electronic mechanisms behind the structural transformation in low- oxide glasses, where transitions to highly coordinated cations are hindered well above 1 Mbar, providing the origin of incompressibility of low- amorphous oxide under multi-Mbar compression. Published by the American Physical Society 2024

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2024

Theoretical Assessment of the Transition Between Electron Emission Mechanisms for Nonplanar Diodes

Theoretically and computationally describing the operation of nanodiodes requires characterizing the transitions between multiple electron emission mechanisms for nanodiodes with complicated geometries. This motivates our development of techniques to determine when simplified theories for individual mechanisms suffice compared to more complete, but more computationally expensive, models. Leveraging recent theories that define a canonical gap distance to translate planar theory to nonplanar diodes, we derive the conditions for the transitions among thermal emission, field emission, and space-charge-limited current density (SCLCD) in vacuum and with collisions for non-Cartesian coordinate systems, including spherical, cylindrical, and prolate spheroidal coordinate systems. Particle-in-cell (PIC) simulations of the current density as a function of applied voltage for a tip-to-plate geometry in vacuum agreed qualitatively with the asymptotes for thermal emission at low voltage and SCLCD at higher voltage using the canonical gap distance. As a result, this demonstrates the utility of this approach for guiding system design and suggests future extensions to save simulation time for more realistic geometries that are more computationally expensive.

Conformal mapping↗
DOE OSTI2025

Optical properties of vacancies in aluminum oxide (𝛼−Al 2 ⁢O 3 ) from first principles

We employ first-principles calculations based on hybrid density functional theory to investigate the structural and optical properties of the oxygen vacancy (𝑉 O ) and aluminum vacancy (𝑉 Al ) in 𝛼−Al 2 ⁢O 3 , the most stable (corundum) phase of alumina. Our calculations facilitate the identification of experimental excitation and luminescence spectra with specific electronic transitions at the vacancy sites. The absorption line shape for excitation of an electron at 𝑉$^0_O$ to the conduction-band minimum (CBM) is in excellent agreement with the 6.1 eV band detected by optical absorption spectroscopy, and we find that the 5.9 eV absorption band is generated by an internal electron transition at 𝑉$^0_O$. We confirm that the slowly decaying 3.0 eV emission band of the 𝐹 center is due to a triplet-singlet transition at 𝑉$^0_O$. Our calculations also reveal that the 4.8 eV/5.4 eV absorption and 3.8 eV emission bands assigned to the 𝐹 + center are generated by internal transitions at 𝑉$^{+1}_O$. The line shape for the excitation of an electron from 𝑉$^{+1}_O$ to the CBM agrees well with an absorption band at 6.4 eV, while the recombination of an electron with 𝑉$^{+2}_O$ also produces luminescence around 3.8 eV, but with a considerably broader line shape. For Al vacancies, we confirm that the most prevalent configuration in 𝛼−Al 2 ⁢O 3 is a split-vacancy configuration 𝑉 Al,s , and we calculate migration barriers for different directions in the corundum crystal. We predict absorption and emission spectra for the excitation and recombination of an electron localized at 𝑉$^{−3}_{Al}$ and 𝑉$^{−3}_{Al,s}$ sites with the CBM. The line shapes of the two 𝑉 Al configurations overlap and are considerably broader than the spectra corresponding to 𝑉 O .

36 MATERIALS SCIENCE↗
DOE OSTI2025

Nanoscale Tracking of the High-Temperature Spin-State Transition in LaCoO 3

The high-temperature spin and electronic transitions in LaCoO 3 have recently been leveraged to create neuromorphic (brain-inspired) devices. While these devices have shown the potential for impactful functionality in next-generation computing systems, the nanoscale dynamics of the spin and electronic transitions that underlie their operation are not well understood. Inhomogeneities related to interfaces, electrode contacts, strain, and crystal defects can all affect device performance, making nanoscale characterization of the transitions essential for producing consistent and reliable devices. Here, we demonstrate the first nanoscale in situ measurement of the spin transition in LaCoO 3 at device-relevant temperatures (25–325 °C) over length scales of tens of nanometers using STEM-EELS. This measurement is enabled by an Al 2 O 3 coating, which prevents unwanted reduction of the LaCoO 3 specimen at high temperature and vacuum. The detailed understanding of LaCoO 3 transition dynamics enabled by such measurements will be crucial for optimizing LaCoO 3 -based neuromorphic devices and increasing reliability for real-world application.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2025

Resolving femtosecond photoinduced energy flow: capture of nonadiabatic reaction pathway topography and wavepacket dynamics from photoexcitation through the conical intersection seam (Final Technical Report)

The dynamics that take place within just tens to hundreds of femtoseconds following the absorption of light by a molecule can play a critical role in how the absorbed energy is directed, allowing it to be used for a specific function or dissipated harmlessly. The form of chemical change that occurs rapidly in these molecules is called a “nonadiabatic electronic transition.” Such transitions are known to mediate energy flow in natural biological systems such as the ultraviolet photoprotection mechanism of DNA and the first step of the human vision response. Understanding how these mechanisms work precisely may help scientists achieve controlled manipulation of solar energy or optical control of a wide range of energy management functions in artificial systems. Experimental methods, however, have not yet allowed a precisely resolved and complete measurement of nonadiabatic electronic transitions. This constitutes a major obstacle to progress in the field. For progress to occur that would inform a wide body of research aiming to efficiently harness the energy of light for practical purposes, it is especially important to benchmark computational models of the molecules undergoing these rapid changes with experimental measurements, in order to learn which models are accurate. With Dept. of Energy funding, we have made strong progress towards establishing a new optical method for experimentally detecting the full nonadiabatic electronic transition. This requires having coordinated pulses of light covering the visible through the mid-infrared range of the electromagnetic spectrum that last only ten femtoseconds. We have developed a new, relatively simple approach for generating such pulses of laser light, and have incorporated them into a time-resolved spectrometer for measuring rapid changes in molecules. These tools can provide the greater precision and new types of data that are needed to benchmark computational models of molecular change and thus to make progress in the field. Our tools were tested on graphene, an excellent solid-state sample for verifying the capabilities and limitations of our instrumentation. The investment made in these tools by the Dept. of Energy Office of Science will allow new fundamental scientific understanding of energy dynamics in molecules in future studies.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2026

Theoretical assessment of the transition between electron emission mechanisms in a collisional crossed-field gap

Understanding the transition to the limiting current under vacuum and collisional conditions for thermal-field emission in a crossed-field gap is critical for characterizing the operating regime for numerous applications, such as high-power microwaves and Hall thrusters. By deriving the exact solution for the current density as a function of cathode temperature (and, by extension, initial velocity), cathode electric field, applied voltage, collision frequency, and magnetic field, we determine the transition from the canonical current source (thermal-field emission) to the vacuum and collisional limiting currents under different operating conditions. Here, we further show that the exact solution recovers the asymptotic solutions for the canonical and limiting currents for vacuum and collisional crossed-field gaps under appropriate limits. The exact solution demonstrates that the critical current decreases with both increasing magnetic field strength and increasing collisionality. Nexus phase space plots constructed by matching the individual asymptotic solutions provide the conditions for the transitions between mechanisms, elucidating when a single mechanistic equation would suffice and when theories combining multiple mechanisms are necessary.

Breen, Lorin I. [Purdue Univ., West Lafayette, IN ↗
DOE OSTI2025

Doping Induced Magnetic and Electronic Phase Transitions in the Ferrimagnetic Half-Metallic Mn 4 Al 11 Compound

The future of spintronics and semiconductor applications demands materials with tailored electronic and magnetic properties. Here, this study uses density functional theory to investigate the electronic structure of the half-metallic compound Mn 4 Al 11 under uniaxial strain and in its Ge-substituted derivatives. Strain analysis shows that although the half-metallic band gap collapses under strain beyond −2%, the ferrimagnetic character remains stable. Ge substitution at six inequivalent Al sites in Mn 4 Al 11 results in varying degrees of metallicity and magnetic properties. Substitution at Al═ (000) induces a metal-to-insulator transition with an indirect semiconducting gap of 0.14 eV. Bonding and hybridization analyses reveal that local Mn–Al interactions due to Ge substitution significantly modify the local electronic structure, causing both electronic and magnetic phase transitions. This work highlights the effectiveness of substitutional doping in tuning half-metallicity and magnetic properties in inorganic solids, enabling the design of materials for future technological applications.

alloys↗