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Results for “Drift-diffusion process”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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6 records
All sourcesNASA NTRSDOE OSTI
NASA NTRS1988

Collisionless shock formation and the prompt acceleration of solar flare ions

The formation mechanisms of collisionless shocks in solar flare plasmas are investigated. The priamry flare energy release is assumed to arise in the coronal portion of a flare loop as many small regions or 'hot spots' where the plasma beta locally exceeds unity. One dimensional hybrid numerical simulations show that the expansion of these 'hot spots' in a direction either perpendicular or oblique to the ambient magnetic field gives rise to collisionless shocks in a few Omega(i), where Omega(i) is the local ion cyclotron frequency. For solar parameters, this is less than 1 second. The local shocks are then subsequently able to accelerate particles to 10 MeV in less than 1 second by a combined drift-diffusive process. The formation mechanism may also give rise to energetic ions of 100 keV in the shock vicinity. The presence of these energetic ions is due either to ion heating or ion beam instabilities and they may act as a seed population for further acceleration. The prompt acceleration of ions inferred from the Gamma Ray Spectrometer on the Solar Maximum Mission can thus be explained by this mechanism.

Cargill, P. J.↗
NASA NTRS1998

Simulation of Ultra-Small MOSFETs Using a 2-D Quantum-Corrected Drift-Diffusion Model

The continued down-scaling of electronic devices, in particular the commercially dominant MOSFET, will force a fundamental change in the process of new electronics technology development in the next five to ten years. The cost of developing new technology generations is soaring along with the price of new fabrication facilities, even as competitive pressure intensifies to bring this new technology to market faster than ever before. To reduce cost and time to market, device simulation must become a more fundamental, indeed dominant, part of the technology development cycle. In order to produce these benefits, simulation accuracy must improve markedly. At the same time, device physics will become more complex, with the rapid increase in various small-geometry and quantum effects. This work describes both an approach to device simulator development and a physical model which advance the effort to meet the tremendous electronic device simulation challenge described above. The device simulation approach is to specify the physical model at a high level to a general-purpose (but highly efficient) partial differential equation solver (in this case PROPHET, developed by Lucent Technologies), which then simulates the model in 1-D, 2-D, or 3-D for a specified device and test regime. This approach allows for the rapid investigation of a wide range of device models and effects, which is certainly essential for device simulation to catch up with, and then stay ahead of, electronic device technology of the present and future. The physical device model used in this work is the density-gradient (DG) quantum correction to the drift-diffusion model [Ancona, Phys. Rev. B 35(5), 7959 (1987)]. This model adds tunneling and quantum smoothing of carrier density profiles to the drift-diffusion model. We used the DG model in 1-D and 2-D (for the first time) to simulate both bipolar and unipolar devices. Simulations of heavily-doped, short-base diodes indicated that the DG quantum corrections do not have a large effect on the IN characteristics of electronic devices without heteroj unction s. On the other hand, ultra-small MOSFETs certainly exhibit important quantum effects that the DG model will include: quantum repulsion of the inversion and gate charges from the oxide interfaces, and quantum tunneling through thin gate oxides. We present initial results of 2-D DG simulations of ultra-small MOSFETs. Subtle but important issues involving the specification of the model, boundary conditions, and interface constraints for DG simulation of MOSFETs will also be illuminated.

Biegal, Bryan A.↗
NASA NTRSDate not supplied

Effect of Plasma Sheaths on Earth Re-entry MHD Processes

The first study of the full coupling between the aerothermodynamics, the magnetohydrodynamics, and the plasma sheaths within earth entry flows is here per-formed. The problem tackled herein is representative of a force-generating MHD patch located between the plenum and the frustum of a capsule entering the earth’s atmosphere at Mach 34. The reactions are obtained from a modified 11-species Park chemical solver. The physical model fully couples the drift-diffusion model for the sheaths to the multispecies Navier-Stokes equations for the plasma flow. The Hall and ion slip effects are taken into consideration within the plasma flow and within the sheaths. The effect of the electrode material on the MHD process is studied. Using thoriated tungsten instead of graphite leads to a four-fold increase in the Lorentz forces and also leads to significantly reduced heat fluxes on the cathode. This is attributed to the much higher electrical conductivity of the thoriated tungsten sheath reducing by orders of magnitude the plasma electrical resistance near the surfaces.

Bernard Parent↗
NASA NTRS1986

The 60 GHz IMPATT diode development

The objective is to develop 60 GHz IMPATT diodes suitable for communications applications. The performance goals of the 60 GHz IMPATT is 1W CW output power with a conversion efficiency of 15 percent and 10-year lifetime. The final design of the 60 GHz IMPATT structure evolved from computer simulations performed at the University of Michigan. The initial doping profile, involving a hybrid double-drift (HDD) design, was derived from a drift-diffusion model that used the static velocity-field characteristics for GaAs. Unfortunately, the model did not consider the effects of velocity undershoot and delay of the avalanche process due to energy relaxation. Consequently, the initial devices were oscillating at a much lower frequency than anticipated. With a revised simulation program that included the two effects given above, a second HDD profile was generated and was used as a basis for fabrication efforts. In the area of device fabrication, significant progress was made in epitaxial growth and characterization, wafer processing, and die assembly. The organo-metallic chemical vapor deposition (OMCVD) was used. Starting with a baseline X-Band IMPATT technology, appropriate processing steps were modified to satisfy the device requirements at V-Band. In terms of efficiency and reliability, the device requirements dictate a reduction in its series resistance and thermal resistance values. Qualitatively, researchers were able to reduce the diodes' series resistance by reducing the thickness of the N+ GaAs substrate used in its fabrication.

Dat, Rovindra↗
NASA NTRSDate not supplied

Effect of Plasma Sheaths on Earth Re-entry MHD Processes

The first study of the full coupling between the aerothermodynamics, the magnetohydrodynamics, and the plasma sheaths within earth entry flows is here per-formed. The problem tackled herein is representative of a force-generating MHD patch located between the plenum and the frustum of a capsule entering the earth’s atmosphere at Mach 34. The reactions are obtained from a modified 11-species Park chemical solver. The physical model fully couples the drift-diffusion model for the sheaths to the multispecies Navier-Stokes equations for the plasma flow. The Hall and ion slip effects are taken into consideration within the plasma flow and within the sheaths. Results obtained indicate that the cathode sheath can exert significant resistance to current flow and thus reduce the MHD-generated force by 40% or more. The effect of the sheath on the MHD force is found to be more pronounced at lower applied magnetic field.

Earth Re-entry↗
NASA NTRS2001

Electro-Thermal Simulation Studies of SiC Junction Diodes Containing Screw Dislocations Under High Reverse-Bias Operation

The objective of this work was to conduct a modeling study of SiC P-N junction diodes operating under high reverse biased conditions. Analytical models and numerical simulation capabilities were to be developed for self-consistent electro-thermal analysis of the diode current-voltage (I-V) characteristics. Data from GRC indicate that screw dislocations are unavoidable in large area SiC devices, and lead to changes in the SiC diode electrical response characteristics under high field conditions. For example, device instability and failures linked to internal current filamentation have been observed. The physical origin of these processes is not well understood, and quantitative projections of the electrical behavior under high field and temperature conditions are lacking. Thermal calculations for SiC devices have not been reported in the literature either. So estimates or projections of peak device temperatures and power limitations do not exist. This numerical study and simulation analysis was aimed at resolving some of the above issues. The following tasks were successfully accomplished: (1) Development of physically based models using one- and two-dimensional drift-diffusion theory for the transport behavior and I-V characteristics; (2) One- and two-dimensional heat flow to account for internal device heating. This led to calculations of the internal temperature profiles, which in turn, were used to update the electrical transport parameters for a self-consistent analysis. The temperature profiles and the peak values were thus obtainable for a given device operating condition; (3) Inclusion of traps assumed to model the presence of internal screw dislocations running along the longitudinal direction; (4) Predictions of the operating characteristics with and without heating as a function of applied bias with and without traps. Both one and two-dimensional cases were implemented; (5) Assessment of device stability based on the operating characteristics. The presence of internal non-uniformities, particularly filamentary structures, was probed and demonstrated; (6) Cause and physical origins of filamentary behavior and unstable I-V characteristics were made transparent; (7) It was demonstrated that diodes containing defects would be more prone to thermal breakdown associated with the temperature dependent decrease in the thermal conductivity; and (8) Finally, negative differential resistance (S-shaped NDR) which can potential lead to device instability and filamentary behavior was shown to occur for diodes containing a line of defects such as could be associated with a screw dislocation line.

Joshi, R. P.↗