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Results for “Doped semiconductors”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 19 records
All sourcesNASA NTRSDOE OSTI
NASA NTRS2009

Metal-doped semiconductor nanoparticles and methods of synthesis thereof

The present invention generally relates to binary or higher order semiconductor nanoparticles doped with a metallic element, and thermoelectric compositions incorporating such nanoparticles. In one aspect, the present invention provides a thermoelectric composition comprising a plurality of nanoparticles each of which includes an alloy matrix formed of a Group IV element and Group VI element and a metallic dopant distributed within the matrix.

Ren, Zhifeng↗
DOE OSTI2020

Probing free carrier plasmons in doped semiconductors using spatially resolved electron energy loss spectroscopy

We report spatially resolved measurements of free carrier collective excitations in a doped semiconductor. Using ~10 meV resolution electron energy loss spectroscopy (EELS) in an electron microscope with Å spatial resolution, we identify both surface and bulk carrier plasmons at infrared energies in a freestanding film of indium tin oxide (ITO). The interference patterns of long wavelength propagating surface carrier plasmons are revealed using spatially resolved EELS, from which we extract a dispersion relation. We further show that the energies of these plasmons vary near the surfaces and grain boundaries of the film due to band bending. Modeling based on dielectric theory agrees very well with experimental results. Finally, carrier plasmons in amorphous and crystalline ITO films are compared. These results should also be helpful for understanding the free carrier plasmons in other doped semiconductors in nanoscale volumes.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2022

Composite excitonic states in doped semiconductors

We present a theoretical model of composite excitonic states in doped semiconductors. Many-body interactions between a photoexcited electron-hole pair and the electron gas are integrated into a computationally tractable few-body problem, solved by the variational method. We focus on electron-doped monolayer (ML)-MoSe 2 and ML-WSe 2 due to the contrasting character of their conduction bands. In both cases, the core of the composite is a tightly bound trion (two electrons and a valence-band hole) surrounded by a region depleted of electrons. The composite in ML-WSe 2 further includes a satellite electron with different quantum numbers. The theory is general and can be applied to semiconductors with various energy-band properties, allowing one to calculate their excitonic states and to quantify the interaction with the Fermi sea.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Quadrupolar interactions between acceptor pairs in $\mathcal{p}$-doped semiconductors

Here, we consider the interaction between acceptor pairs in doped semiconductors in the limit of large interacceptor separation relevant for low doping densities. Modeling individual acceptors via the spherical model of Baldereschi and Lipari, we calculate matrix elements of the quadrupole tensor between the four degenerate ground states and show that the acceptor has a nonzero quadrupole moment. As a result, the dominant contribution to the large-separation acceptor-acceptor interaction comes from direct (charge-density) terms rather than exchange terms. The quadrupole is the leading nonzero moment, so the electric quadrupole-quadrupole interaction dominates for large separation. We calculate the matrix elements of the quadrupole-quadrupole interaction Hamiltonian in a product-state basis and diagonalize, obtaining a closed-form expression for the energies and degeneracies of the sixteen-state energy spectrum. All dependence on material parameters enters via an overall prefactor, resulting in surprisingly simple and universal results. This simplicity is due, in part, to a mathematical happenstance, the nontrivial vanishing of a particular Wigner 6-$\mathcal{j}$ symbol, $^\{\frac{^2_3}{\small2} \frac{^2_3}{\small2} \frac{^2_3}{\small2}$$^\}$ = 0. Results are relevant to the control of two-qubit interactions in quantum computing implementations based on acceptor spins, as well as calculations of the thermodynamic properties of insulating $\mathcal{p}$-type semiconductors.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2025

Energy Shifts and Broadening of Excitonic Resonances in Electrostatically Doped Semiconductors

Tuning the density of resident electrons or holes in semiconductors through electrostatic doping provides crucial insight into the composition of the many excitonic complexes that are routinely observed as absorption or photoluminescence resonances in optical studies. Moreover, we can change the way these resonances shift and broaden in energy by controlling the quantum numbers (e.g., spin and valley) of the resident carriers with applied magnetic fields and doping levels, as well as by selecting the quantum numbers of the photoexcited or recombining electron-hole (𝑒−ℎ) pair through optical polarization. Here, we discuss the roles of distinguishability and optimality of excitonic complexes, showing them to be key ingredients that determine the energy shifts and broadening of optical resonances in charge-tunable semiconductors. A distinguishable 𝑒−ℎ pair means that the electron and hole undergoing photoexcitation or recombination have quantum numbers that are not shared by any of the resident carriers. An optimal excitonic complex refers to a complex whose particles come with all available quantum numbers of the resident carriers. Based on the carrier density, magnetic field, and light polarization, all optical resonances may be classified as either distinct or indistinct depending on the distinguishability of the 𝑒−ℎ pair, and the underlying excitonic complex can be classified as either optimal or suboptimal. The universality of these classifications, inherited from the fundamental Pauli exclusion principle, allows us to understand how optical resonances shift in energy and whether they should broaden as doping is increased. This understanding is supported by conclusive evidence that the broadening and decay of optical resonances cannot be simply attributed to enhanced screening when resident carriers are added to a semiconductor. Finally, applying the classification scheme in either monolayer or moiré heterobilayer semiconductor systems, we relate the energy shift and amplitude of the neutral-exciton resonance to the compressibility of the resident carrier gas.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2024

Doped semiconductor devices for sub-MeV dark matter detection

Dopant atoms in semiconductors can be ionized with ∼ 10 meV energy depositions, allowing for the design of low-threshold detectors. We propose using doped semiconductor targets to search for sub-MeV dark matter scattering or sub-eV dark matter absorption on electrons. Currently unconstrained cross sections could be tested with a 1 g-day exposure in a doped detector with backgrounds at the level of existing pure semiconductor detectors, but improvements would be needed to probe the freeze-in target. We discuss the corresponding technological requirements and lay out a possible detector design. Published by the American Physical Society 2024

Astronomy & Astrophysics↗
DOE OSTI2020

Determination of background doping polarity of unintentionally doped semiconductor layers

Here, we present a method of determining the background doping type in semiconductors using capacitance–voltage measurements on overetched double mesa p–i–n or n–i–p structures. Unlike Hall measurements, this method is not limited by the conductivity of the substrate. By measuring the capacitance of devices with varying top and bottom mesa sizes, we were able to conclusively determine which mesa contained the p–n junction, revealing the polarity of the intrinsic layer. This method, when demonstrated on GaSb p–i–n and n–i–p structures, concluded that the material is residually doped p-type, which is well established by other sources. The method was then applied to a 10 monolayer InAs/10 monolayer AlSb superlattice, for which the doping polarity was unknown, and indicated that this material is also p-type.

42 ENGINEERING↗
DOE OSTI2020

Doped semiconductors and methods of making the same

The present disclosure relates to a composition that includes a first element, a second element, a third element, a ligand, and an anion, where the first element and the second element form a nanocrystal that includes a surface and a crystal lattice, a first portion of the third element covers at least a second portion of the surface in the form of a layer, a third portion of the third element is incorporated into the crystal lattice, and the ligand and the anion are ionically bound to at least one of the second element and/or the first portion of the third element.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Lewis acid–base pair doping of p-type organic semiconductors

Doping is required to increase the electrical conductivity of organic semiconductors for uses in electronic and energy conversion devices. The limited number of commonly used p-type dopants suggests that new dopants or doping mechanisms could improve the efficiency of doping and provide new means for processing doped polymers. Drawing on Lewis acid–base pair chemistry, we combined Lewis acid dopant B(C 6 F 5 ) 3 (BCF) with the weak Lewis base benzoyl peroxide (BPO). The detailed behavior of p-type doping of the model polymer poly(3-hexylthiophene) (P3HT) with this Lewis acid–base pair in solution was examined. Solution 19F-NMR spectra confirmed the formation of the expected counterion, as well as side products from reactions with solvent. BCF : BPO was also found to efficiently dope a range of semiconducting polymers with varying chemical structures demonstrating that the BCF : BPO combination has an effective electron affinity of at least 5.3 eV. In thin films of regioregular P3HT cast from the doped solutions, delocalized polarons formed due to the large counterions leading to a large polaron-counterion distance. At and above 0.2 eq. BCF : BPO doping, amorphous areas of the film became doped, disrupting the structural order of the films. Despite the change in structural order, thin films of regioregular P3HT doped with 0.2 eq. BCF : BPO had a conductivity of 25 S cm -1 . This study demonstrates the effectiveness of a two-component Lewis acid–base doping mechanism and suggests additional two-component Lewis acid–base chemistries should be explored.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Revealing the Electrophilic‐Attack Doping Mechanism for Efficient and Universal p‐Doping of Organic Semiconductors

Abstract Doping is of great importance to tailor the electrical properties of semiconductors. However, the present doping methodologies for organic semiconductors (OSCs) are either inefficient or can only apply to some OSCs conditionally, seriously limiting their general applications. Herein, a novel p‐doping mechanism is revealed by investigating the interactions between the dopant trityl tetrakis(pentafluorophenyl) borate (TrTPFB) and poly(3‐hexylthiophene) (P3HT). It is found that electrophilic attack of the trityl cations on thiophenes results in the formation of tritylated thiophenium ions, which subsequently induce electron transfer from neighboring P3HT chains to realize p‐doping. This unique p‐doping mechanism enables TrTPFB to p‐dope various OSCs including those with high ionization energy (IE ≈ 5.8 eV). Moreover, this doping mechanism endows TrTPFB with strong doping capability, leading to doping efficiency of over 80% in P3HT. The discovery and elucidation of this novel doping mechanism not only points out that strong electrophiles are a class of efficient p‐dopants for OSCs, but also provides new opportunities toward highly efficient doping of various OSCs.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
NASA NTRS1992

Sub-Kelvin resistance thermometer

A device capable of accurate temperature measurement down to 0.01 K of a particular object is discussed. The device is comprised of the following: a heat sink wafer; a first conducting pad bonded near one end of the heat sink wafer; a second conducting pad bonded near the other end of the heat sink wafer; and an oblong doped semiconductor crystal such as germanium. The oblong doped semiconductor crystal has a third conducting pad bonded on its bottom surface with the oblong doped semiconductor crystal bonded to the heat sink wafer by having the fourth conducting pad bonded to the first conducting pad. A wire is bonded between the second and third conducting pads. Current and voltage wires bonded to the first and second conducting pads measure the change in resistance of the oblong doped semiconductor crystal; this indicates the temperature of the object whose temperature is to be measured.

Castles, Stephen H.↗
DOE OSTI2022

Tunneling full-wave infrared rectenna

A rectenna is used for full-wave rectification of infrared radiation to produce electricity. In the rectenna, a metallic grating overlies a semiconductor body. A tunnel barrier is interposed between each grating element and the semiconductor body. Each of the grating elements overlies a bridge pair consisting of a region of n+-doped semiconductor and a region of p+-doped semiconductor, both of which are embedded in more lightly doped host semiconductor material. Each of the two regions that compose the bridge pair forms a rectifying tunnel junction through a tunnel barrier to at least one overlying grating element. Each of the two regions also forms a semiconductor junction with the host semiconductor material.

Davids, Paul↗