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All sourcesNASA NTRSDOE OSTI
NASA NTRS2003

Study of alloy disorder in quantum dots through multi-million atom simulations

A tight binding model which includes s, p, d, s orbitals is used to examine the electronic structures of an ensemble of dome-shaped In0.6 Ga0.4 As quantum dots. Given ensembles of identically sized quantum dots, variations in composition and configuration yield a linewidth broadening of less than 0.35 meV, much smaller than the total broadening determined from photoluminescence experiments. It is also found that the computed disorder-induced broadening is very sensitive to the applied boundary conditions, so that care must be taken to ensure proper convergence of the numerical results. Examination of local eigenenergies as functions of position shows similar convergence problems and indicates that an inaccurate resolution of the equilibrium atomic positions due to truncation of the simulation domain may be the source of the slow ground state convergence.

disorder↗
NASA NTRS1994

Formation Energy of Disordered Alloys form the Energetics of Ordered Compounds

The cluster expansion technique is used in combination with first-principles calculations of the total energy of ordered compounds to study the energetics of the disordered phase for a number of alloy systems. The effect of short-range order, as seen in the energy differences between an alloy with the configuration corresponding to finite temperature and the perfectly random one is studied. The role of relaxation due to large size mismatch is discussed in terms of an effective cluster volume approximation. Very good agreement with measured energies of formation is obtained when short-range order and relaxation effects are taken into account.

Amador, Carlos↗
NASA NTRS1972

Temperature dependence of the electron density of states and dc electrical resistivity of disordered binary alloys.

A model calculation of the temperature dependence of the electronic density of states and the electrical conductivity of disordered binary alloys, based on the coherent-potential approximation is made by introducing thermal disorder in the single-band model (Velicky and others). Thermal disorder is found to broaden and smear the static-alloy density of states. The electrical resistivity in weak-scattering alloys always increases with temperature. However, in the strong-scattering case, the temperature coefficient of resistivity can be positive, zero, or negative, depending on the location of the Fermi energy.-

Chen, A.-B.↗
NASA NTRS1976

Strain effect on the electronic density of states and dc conductivity of disordered binary alloys

A single-band model calculation is developed for the effect of strain on the temperature variation of the electronic density of states and the electrical onductivity of disordered binary alloys. Experimentally, strain has only a small effect on the temperature variation of the conductivity. Shifts in the Fermi level and distortions of the density of states under different strains are found from the calculations. The small change in the temperature variation of conductivity under strain is a result of competition between these two effects. Methods to extract physical parameters characterizing alloys from measurements of the strain and temperature variation of the resistivity are discussed. Suggestions are also made about materials-selection criteria for strain-gauge applications.

Hwang, H.-C.↗
NASA NTRS1984

Electron mobility in modulation-doped heterostructures

A model for electron mobility in a two-dimensional electron gas confined in a triangular well was developed. All major scattering processes (deformation potential and piezoelectric acoustic, polar optical, ionized impurity, and alloy disorder) were included, as well as intrasubband and intersubband scattering. The model is applied to two types of modulation-doped heterostructures, namely GaAs-GaAlAs and In(0.53)Ga(0.47)As-Al(0.52)In(0.48)As. In the former case, phonons and remote ionized impurities ultimately limit the mobility, whereas in the latter, alloy disorder is a predominant scattering process at low temperatures. The calculated mobilities are in very good agreement with recently reported experimental characteristics for both GaAs-Ga(1-x)Al(x)As and In(0.53)Ga(0.47)As-Al(0.52)In(0.48)As modulation-doped heterostructures.

Walukiewicz, W.↗
NASA NTRS1976

Phase separation of metallic hydrogen-helium alloys

Calculations are presented for the thermodynamic functions and phase separation boundaries of solid metallic hydrogen helium alloys at temperatures between 0 K and 19,000 K and at pressures between 15 and 90 megabars. Expressions for the band structure energy of a randomly disordered alloy (including third order in the electron ion interaction) are derived and evaluated. Short and long range order are included by the quasi-chemical method, and lattice dynamics in the virtual crystal harmonic approximation. We conclude that at temperatures below 4,000 K there is complete phase separation of hydrogen helium alloys, and that a miscibility gap remains at the highest temperatures and pressures considered. The relevance of these results to models of the deep interior of Jupiter is briefly discussed.

Straus, D. M.↗
NASA NTRS1977

Phase separation of metallic hydrogen-helium alloys

Calculations are presented for the thermodynamic functions and phase-separation boundaries of solid metallic hydrogen-helium alloys at temperatures between zero and 19,000 K and at pressures between 15 and 90 Mbar. Expressions for the band-structure energy of a randomly disordered alloy (including third order in the electron-ion interaction) are derived and evaluated. Short- and long-range orders are included by the quasi-chemical method, and lattice dynamics in the virtual-crystal harmonic approximation. It is concluded that at temperatures below 4000 K, there is essentially complete phase separation of hydrogen-helium alloys and that a miscibility gap remains at the highest temperatures and pressures considered. The relevance of these results to models of the deep interior of Jupiter is briefly discussed.

Straus, D. M.↗
NASA NTRS1988

Ballistic transport in II-VI semiconductor compounds and alloys

Realistic band structures are used in calculating the group velocity and scattering rates for electrons with injection energies up to 1 eV in ZnTe, CdTe, and the low-effective-mass alloy Hg(0.7)Cd(0.3)Te. Scattering from longitudinal optical phonons, ionized impurities, and alloy disorder have been included in the full band-structure calculation, which automatically includes both intra- and intervalley scattering. Of the II-VI materials considered, at 77 K HgCdTe is superior for low injection energies (up to 0.25 eV) while CdTe is superior at higher injection energies (1 eV) at room temperature. The attainable mean free paths (equal to or greater than 1000 A) and group velocities (equal to or greater than 10 to the 8th cm/s) for both systems are comparable to values found in III-V systems.

Berding, M. A.↗
NASA NTRS2005

Effect of electron-nuclear spin interactions for electron-spin qubits localized in InGaAs self-assembled quantum dots

The effect of electron-nuclear spin interactions on qubit operations is investigated for a qubit represented by the spin of an electron localized in an InGaAs self-assembled quantum dot. The localized electron wave function is evaluated within the atomistic tight-binding model. The electron Zeeman splitting induced by the electron-nuclear spin interaction is estimated in the presence of an inhomogeneous environment characterized by a random nuclear spin configuration, by the dot-size distribution, alloy disorder, and interface disorder. Due to these inhomogeneities, the electron Zeeman splitting varies from one qubit to another by the order of 10(-6), 10(-6), 10(-7), and 10(-9) eV, respectively. Such fluctuations cause errors in exchange operations due to the inequality of the Zeeman splitting between two qubits. However, the error can be made lower than the quantum error threshold if an exchange energy larger than 10(-4) eV is used for the operation. This result shows that the electron-nuclear spin interaction does not hinder quantum-dot based quantum computer architectures from being scalable even in the presence of inhomogeneous environments.

Whaley, K. Birgitta↗
NASA NTRS1984

The influence of containerless undercooling and rapid solid-state quenching on the superconductive and magnetic properties of some clustering alloy systems

The properties of clustering alloy systems and the manner in which they are influenced by rapid quenching from a containerless undercooled melt are discussed. It was postulated that rapid quenching under such conditions would result in highly disordered metastable alloys, and furthermore, that alloys in such conditions would possess physical properties characteristically different from those of alloys in the annealed equilibrium state. The scope of the program is essentially to gauge the influence of containerless undercooling on the submicrostructure of clustering-type alloys, using certain physical properties as diagnostic tools. Microstructures and macrostructures were to be examined using optical- and scanning-electron microscopy.

Collings, E. W.↗
NASA NTRS2004

Open-Source Software for Modeling of Nanoelectronic Devices

The Nanoelectronic Modeling 3-D (NEMO 3-D) computer program has been upgraded to open-source status through elimination of license-restricted components. The present version functions equivalently to the version reported in "Software for Numerical Modeling of Nanoelectronic Devices" (NPO-30520), NASA Tech Briefs, Vol. 27, No. 11 (November 2003), page 37. To recapitulate: NEMO 3-D performs numerical modeling of the electronic transport and structural properties of a semiconductor device that has overall dimensions of the order of tens of nanometers. The underlying mathematical model represents the quantum-mechanical behavior of the device resolved to the atomistic level of granularity. NEMO 3-D solves the applicable quantum matrix equation on a Beowulf-class cluster computer by use of a parallel-processing matrix vector multiplication algorithm coupled to a Lanczos and/or Rayleigh-Ritz algorithm that solves for eigenvalues. A prior upgrade of NEMO 3-D incorporated a capability for a strain treatment, parameterized for bulk material properties of GaAs and InAs, for two tight-binding submodels. NEMO 3-D has been demonstrated in atomistic analyses of effects of disorder in alloys and, in particular, in bulk In(x)Ga(1-x)As and in In(0.6)Ga(0.4)As quantum dots.

Oyafuso, Fabiano↗
NASA NTRS2003

Numerical Modeling of Nanoelectronic Devices

Nanoelectronic Modeling 3-D (NEMO 3-D) is a computer program for numerical modeling of the electronic structure properties of a semiconductor device that is embodied in a crystal containing as many as 16 million atoms in an arbitrary configuration and that has overall dimensions of the order of tens of nanometers. The underlying mathematical model represents the quantummechanical behavior of the device resolved to the atomistic level of granularity. The system of electrons in the device is represented by a sparse Hamiltonian matrix that contains hundreds of millions of terms. NEMO 3-D solves the matrix equation on a Beowulf-class cluster computer, by use of a parallel-processing matrix vector multiplication algorithm coupled to a Lanczos and/or Rayleigh-Ritz algorithm that solves for eigenvalues. In a recent update of NEMO 3-D, a new strain treatment, parameterized for bulk material properties of GaAs and InAs, was developed for two tight-binding submodels. The utility of the NEMO 3-D was demonstrated in an atomistic analysis of the effects of disorder in alloys and, in particular, in bulk In(x)Ga(l-x)As and in In0.6Ga0.4As quantum dots.

Klimeck, Gerhard↗