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Pressure-driven Lifshitz transition in type-II Dirac semimetal NiTe[subscript 2]
Abstract not provided
Light-induced anomalous Hall conductivity in the massive three-dimensional Dirac semimetal Co 3 Sn 2 S 2
Weyl semimetals can emerge from Dirac semimetals when the time-reversal or spatial-inversion symmetries are broken. Recently, it has been proposed based on Floquet theory that Dirac semimetals can be converted into Weyl semimetals even by shining circularly polarized light (CPL). Here we have investigated the possibility of such a Dirac-Weyl conversion by measuring the CPL-induced anomalous Hall conductivity (AHC) in a massive 3D Dirac semimetal Co 3 Sn 2 S 2 in the paramagnetic phase using ultrafast midinfrared pump-terahertz Faraday rotation probe spectroscopy. We find that the field-strength and driving frequency dependence of the observed AHC is well accounted for by CPL-induced nonzero Berry curvature associated with the splitting of the Dirac bands as predicted by the Floquet theory. As a result, the estimated splitting of the Dirac bands reaches about 60% of the mass gap and the calculated CPL-induced AHC quantitatively reproduces the experimental observation, demonstrating a promising route toward the realization of Floquet-Weyl states from massive Dirac semimetals.
Evidence of decoupling of surface and bulk states in Dirac semimetal Cd 3 As 2
Abstract Dirac semimetals have attracted a great deal of current interests due to their potential applications in topological quantum computing, low-energy electronic devices, and single photon detection in the microwave frequency range. Herein are results from analyzing the low magnetic ( B ) field weak-antilocalization behaviors in a Dirac semimetal Cd 3 As 2 thin flake device. At high temperatures, the phase coherence length l ϕ first increases with decreasing temperature ( T ) and follows a power law dependence of l ϕ ∝ T −0.4 . Below ∼3 K, l ϕ tends to saturate to a value of ∼180 nm. Another fitting parameter α , which is associated with independent transport channels, displays a logarithmic temperature dependence for T > 3 K, but also tends to saturate below ∼3 K. The saturation value, ∼1.45, is very close to 1.5, indicating three independent electron transport channels, which we interpret as due to decoupling of both the top and bottom surfaces as well as the bulk. This result, to our knowledge, provides first evidence that the surfaces and bulk states can become decoupled in electronic transport in Dirac semimetal Cd 3 As 2 .
Fermi surface reconstruction due to orthorhombic distortion in the Dirac semimetal YbMnSb 2
A Dirac semimetal with magnetic atoms as constituents delivers an interesting platform to investigate the interplay of Fermi surface (FS) topology, electron correlation, and magnetism. One such family of semimetals is YbMn 𝑃𝑛 2 (𝑃𝑛 = Sb,Bi), which is being actively studied due to the intertwined spin and charge degrees of freedom. Here, in this study, we investigate the relationship between the magnetic/crystal structures and FS topology of YbMnSb 2 using single crystal x-ray diffraction, neutron scattering, magnetic susceptibility, magnetotransport measurements, and complimentary density functional theory (DFT) calculations. Contrary to previous reports, the x-ray and neutron diffraction reveal that YbMnSb 2 crystallizes in an orthorhombic 𝑃𝑛𝑚𝑎 structure with a notable antiphase displacement of the magnetic Mn ions that increases in magnitude upon cooling. As a result of this orthorhombicity, first-principles DFT calculation reveals a reduced Brillouin zone and more anisotropic FS of YbMnSb 2 compared to YbMnBi 2 . Moreover, the hole-type carrier density drops by two orders of magnitude as YbMnSb 2 orders antiferromagnetically, indicating band folding in a magnetic ordered state. In addition, the Landau level fan diagram yields a nontrivial nature of the Shubnikov–de Haas quantum oscillation frequency arising from the Dirac-like Fermi pocket. These results imply that YbMnSb 2 is an ideal platform to explore the interplay of subtle lattice distortion, magnetic order, and topological transport arising from relativistic quasiparticles.
Robust magnetism and crystal structure in Dirac semimetal EuMnBi 2 under high pressure
Dirac materials offer exciting opportunities to explore low-energy carrier dynamics and novel physical phenomena, especially their interaction with magnetism. In this context, this work focuses on studies of pressure control on the magnetic state of EuMnBi 2 , a representative magnetic Dirac semimetal, through time-domain synchrotron Mössbauer spectroscopy in 151 Eu. Contrary to the previous report that the antiferromagnetic order is suppressed by pressure above 4 GPa, we have observed robust magnetic order up to 33.1 GPa. Synchrotron-based x-ray diffraction experiment on a pure EuMnBi 2 sample shows that the tetragonal crystal lattice remains stable up to at least 31.7 GPa.
Robust three-dimensional type-II Dirac semimetal state in SrAgBi
Topological semimetals such as Dirac, Weyl or nodal line semimetals are widely studied for their peculiar properties including high Fermi velocities, small effective masses and high magnetoresistance. When the Dirac cone is tilted, exotic phenomena could emerge whereas materials hosting such states are promising for photonics and plasmonics applications. Here we present evidence that SrAgBi is a spin-orbit coupling-induced type-II three-dimensional Dirac semimetal featuring tilted Dirac cone at the Fermi energy. Near charge compensation and Fermi surface characteristics are not much perturbed by 7% of vacancy defects on the Ag atomic site, suggesting that SrAgBi could be a material of interest for observation of robust optical and spintronic topological quantum phenomena.
Strong and fragile topological Dirac semimetals with higher-order Fermi arcs
Abstract Dirac and Weyl semimetals both exhibit arc-like surface states. However, whereas the surface Fermi arcs in Weyl semimetals are topological consequences of the Weyl points themselves, the surface Fermi arcs in Dirac semimetals are not directly related to the bulk Dirac points, raising the question of whether there exists a topological bulk-boundary correspondence for Dirac semimetals. In this work, we discover that strong and fragile topological Dirac semimetals exhibit one-dimensional (1D) higher-order hinge Fermi arcs (HOFAs) as universal, direct consequences of their bulk 3D Dirac points. To predict HOFAs coexisting with topological surface states in solid-state Dirac semimetals, we introduce and layer a spinful model of an s – d -hybridized quadrupole insulator (QI). We develop a rigorous nested Jackiw–Rebbi formulation of QIs and HOFA states. Employing ab initio calculations, we demonstrate HOFAs in both the room- ( α ) and intermediate-temperature ( α ″ ) phases of Cd 3 As 2 , KMgBi, and rutile-structure ( $$ \beta ^{\prime} $$ β ′ -) PtO 2 .
Band Engineering of Dirac Semimetals Using Charge Density Waves
New developments in the field of topological matter are often driven by materials discovery, including novel topological insulators, Dirac semimetals and Weyl semimetals. In the last few years, large efforts have been performed to classify all known inorganic materials with respect to their topology. Unfortunately, a large number of topological materials suffer from non-ideal band structures. For example, topological bands are frequently convoluted with trivial ones, and band structure features of interest can appear far below the Fermi level. This leaves just a handful of materials that are intensively studied. Finding strategies to design new topological materials is a solution. Here we introduce a new mechanism that is based on charge density waves and non-symmorphic symmetry to design an idealized Dirac semimetal. We then show experimentally that the antiferromagnetic compound GdSb 0.46 Te 1.48 is a nearly ideal Dirac semimetal based on the proposed mechanism, meaning that most interfering bands at the Fermi level are suppressed. Finally, its highly unusual transport behavior points to a thus far unknown regime, in which Dirac carriers with Fermi energy very close to the node seem to gradually localize in the presence of lattice and magnetic disorder.
Topological Dirac Semimetal Phase in Bismuth Based Anode Materials for Sodium-Ion Batteries
Bismuth has recently attracted interest in connection with Na-ion battery anodes due to its high volumetric capacity. It reacts with Na to form Na 3 Bi which is a prototypical Dirac semimetal with a nontrivial electronic structure. Density-functional-theory based first-principles calculations are playing a key role in understanding the fascinating electronic structure of Na 3 Bi and other topological materials. In particular, the strongly-constrained-and-appropriately-normed (SCAN) meta-generalized-gradient-approximation (meta-GGA) has shown significant improvement over the widely used generalized-gradient-approximation (GGA) scheme in capturing energetic, structural, and electronic properties of many classes of materials. Here, we discuss the electronic structure of Na 3 Bi within the SCAN framework and show that the resulting Fermi velocities and s-band shift around the Γ point are in better agreement with experiments than the corresponding GGA predictions. SCAN yields a purely spin-orbit-coupling (SOC) driven Dirac semimetal state in Na 3 Bi in contrast with the earlier GGA results. Our analysis reveals the presence of a topological phase transition from the Dirac semimetal to a trivial band insulator phase in Na 3 Bi x Sb 1-x alloys as the strength of the SOC varies with Sb content, and gives insight into the role of the SOC in modulating conduction properties of Na 3 Bi.
First-principles theory of the Dirac semimetal Cd 3 As 2 under Zeeman magnetic field
Time-reversal broken Weyl semimetals have attracted much attention recently, but certain aspects of their behavior, including the evolution of their Fermi surface topology and anomalous Hall conductivity with Fermi-level position, have remained underexplored. A promising route to obtain such materials may be to start with a nonmagnetic Dirac semimetal and break time-reversal symmetry via magnetic doping or magnetic proximity. Here we explore this scenario in the case of the Dirac semimetal Cd 3 As 2 , based on first-principles density-functional calculations and subsequent low-energy modeling of Cd 3 As 2 in the presence of a Zeeman field applied along the symmetry axis. We clarify how each four-fold degenerate Dirac node splits into four Weyl nodes, two with chirality ±1 and two higher-order nodes with chirality ±2. Using a minimal k · p model Hamiltonian whose parameters are fit to the first-principles calculations, we detail the evolution of the Fermi surfaces and their Chern numbers as the Fermi energy is scanned across the region of the Weyl nodes at fixed Zeeman field. We also compute the intrinsic anomalous Hall conductivity as a function of Fermi-level position, finding a characteristic inverted-dome structure. Cd 3 As 2 is especially well suited to such a study because of its high mobility, but the qualitative behavior revealed here should be applicable to other Dirac semimetals as well.
Robust and symmetric magnetic field dependency of superconducting diode effect in asymmetric Dirac semimetal SQUIDs
The recent demonstration of the superconducting diode effect (SDE) has generated renewed interest in superconducting electronics, in which devices such as compact superconducting diodes that can perform signal rectification with low-energy operations are needed. In this article, we present our results of robust and symmetric-in-magnetic-field SDE in asymmetric superconducting quantum interference devices (SQUIDs) realized in high-quality Dirac semimetal Cd 3 As 2 thin film grown by the molecular beam epitaxy technique. Consistent with previous work, a zero magnetic field SDE is observed. Furthermore, the difference in switching current is independent of the strength and polarity of an out-plane magnetic field in the range of −10 and 10 mT. We speculate that this robust symmetric-in-field SDE in our Dirac semimetal SQUIDs is due to the formation of helical spin texture, theoretically predicted in Dirac semimetals.
Spin and Charge Interconversion in Dirac-Semimetal Thin Films
We use spin torque ferromagnetic resonance and ferromagnetic-resonance-driven spin pumping to detect spin-charge interconversion at room temperature in heterostructure devices that interface an archetypal Dirac semimetal, Cd 3 As 2 , with a metallic ferromagnet, Ni 0.80 Fe 0.20 (permalloy). Angle-resolved photoemission directly reveals the Dirac-semimetal nature of the samples prior to device fabrication and high-resolution transmission electron microscopy is used to characterize the crystalline structure and the relevant heterointerfaces. We find that the spin-charge interconversion efficiency in Cd 3 As 2 /permalloy heterostructures is comparable to that in heavy metals and that it is enhanced by the presence of an interfacial oxide. Spin torque ferromagnetic resonance measurements reveal an in-plane spin polarization regardless of an oxidized or pristine interface. We discuss the underlying mechanisms for spin-charge interconversion by comparing our results with first principles calculations and conclude that extrinsic mechanisms dominate the observed phenomena. Our results indicate a need for caution in interpretations of spin-transport and spin-charge conversion experiments in Cd 3 As 2 devices that seek to invoke the role of topological Dirac and Fermi arc states.
Interaction-driven quantum anomalous Hall insulator in a Dirac semimetal
Here, the interaction-driven quantum anomalous Hall (QAH) insulator has been sought for a long time in a Dirac semimetal with linear band touching points at the Fermi level. By combining exact diagonalization, density matrix renormalization group, and analytical methods, we study a spinless fermion system on the checkerboard lattice with twofold rotational symmetry, which realizes two Dirac band touching points in the absence of interaction. At weak coupling, the Dirac semimetal is stable. At a finite density-density repulsive interaction, we analyze possible symmetry broken states, and find that an QAH state is stabilized when the interaction strength exceeds the energy scale controlling the separation between the Dirac points. Through numerical simulations, we verify the existence of the QAH phase with spontaneous time-reversal symmetry breaking and quantized Chern number C = 1.
Topological surface states in strained Dirac semimetal thin films
We computationally study the Fermi arc states in a Dirac semimetal, both in a semi-infinite slab and in the thin-film limit. We use Cd 3 As 2 as a model system, and include perturbations that break the C-4 symmetry and inversion symmetry while mirror symmetries remain. The surface states are protected by the mirror symmetries present in the bulk states and thus survive these perturbations. Additionally, the Fermi arc states persist down to very thin films, thinner than presently measured experimentally, but are affected by breaking the symmetry of the Hamiltonian. Recent experimental observations of transport in Cd 3 As 2 films strongly suggest transport by surface states. Our findings are consistent with those observations in that we show that Fermi arc states can survive to rather thin films, and our results also suggest that symmetry-breaking terms that preserve the Fermi arc states nevertheless can have a profound effect in the thin film limit.
Tuning Chiral Anomaly Signature in a Dirac Semimetal via Fast-Ion Implantation
Cd 3 As 2 is a Dirac semimetal that hosts a chiral anomaly, functioning as a platform to realize energy applications. We use fast-ion implantation to enhance the negative longitudinal magnetoresistance (NLMR)─signature of a chiral anomaly─in Nb-doped Cd 3 As 2 thin films. High-energy ion implantation is used to investigate semiconductors and nuclear materials but is rarely employed to study topological materials. We use electrical transport and transmission electron microscopy to characterize the NLMR and crystallinity of Nb-doped Cd 3 As 2 . We find surface-doped thin films display a maximum NLMR around B = 7 T and bulk-doped thin films display a maximum over B = 9 T─all while maintaining crystallinity. This is more than a 100% relative enhancement of the maximum NLMR compared to pristine Cd 3 As 2 . As a result, our work demonstrates the potential of high-energy ion implantation as a practical route to explore chiralitronic properties in topological semimetals.
The Subchalcogenides Ir 2 In 8 Q (Q = S, Se, Te): Dirac Semimetal Candidates with Re-entrant Structural Modulation
Subchalcogenides are uncommon compounds where the metal atoms are in unusually low formal oxidation states. They bridge the gap between intermetallics and semiconductors and can have unexpected structures and properties because of the exotic nature of their chemical bonding as they contain both metal–metal and metal–main group (e.g., halide, chalcogenide) interactions. Finding new members of this class of materials presents synthetic challenges as attempts to make them often result in phase separation into binary compounds. We overcome this difficulty by utilizing indium as a metal flux to synthesize large (millimeter scale) single crystals of novel subchalcogenide materials. Herein, we report two new compounds Ir 2 In 8 Q (Q = Se, Te) and compare their structural and electrical properties to the previously reported Ir 2 In 8 S analogue. Ir 2 In 8 Se and Ir 2 In 8 Te crystallize in the $P_{4_2}$/mnm space group and are isostructural to Ir2In8S, but also have commensurately modulated (with q vectors q = 1/6a* + 1/6b* and q = 1/10a* + 1/10b* for Ir 2 In 8 Se and Ir 2 In 8 Te, respectively) low-temperature phase transitions, where the chalcogenide anions in the channels experience a distortion in the form of In–Q bond alternation along the ab plane. Both compounds display re-entrant structural behavior, where the supercells appear on cooling but revert to the original subcell below 100 K, suggesting competing structural and electronic interactions dictate the overall structure. Notably, these materials are topological semimetal candidates with symmetry-protected Dirac crossings near the Fermi level and exhibit high electron mobilities (~1500 cm 2 V –1 s –1 at 1.8 K) and moderate carrier concentrations (~10 20 cm –3 ) from charge transport measurements. This work highlights metal flux as a synthetic route to high quality single crystals of novel intermetallic subchalcogenides with Dirac semimetal behavior.
Synergetic Ferroelectricity and Superconductivity in Zero-Density Dirac Semimetals near Quantum Criticality
Here, we study superconductivity in a three-dimensional zero-density Dirac semimetal in proximity to a ferroelectric quantum critical point. We find that the interplay of criticality, inversion-symmetry breaking, and Dirac dispersion gives rise to a robust superconducting state at the charge-neutrality point, where no Fermi surface is present. Using Eliashberg theory, we show that the ferroelectric quantum critical point is unstable against the formation of a ferroelectric density wave (FDW), whose fluctuations, in turn, lead to a first-order superconducting transition. Surprisingly, long-range superconducting and FDW orders are found to cooperate with each other, in contrast to the more usual scenario of phase competition. Therefore, we suggest that driving charge neutral Dirac materials, e.g., Pb x Sn 1–x Te, through a ferroelectric quantum critical point may lead to superconductivity intertwined with FDW order.