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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 19 records
All sourcesNASA NTRSDOE OSTI
NASA NTRS1979

Radiation effects in GaAs AMOS solar cells

The results of radiation damage produced in AMOS (Antireflecting-Metal-Oxide-Semiconductor) cells with Sb2O3 interfacial oxide layers by 1-MeV electrons are presented. The degradation properties of the cells as a function of irradiation fluences were correlated with the changes in their spectral response, C-V, dark forward, and light I-V characteristics. The active n-type GaAs layers were grown by the OM-CVD technique, using sulfur doping in the range between 3 x 10 to the 15th power and 7 x 10 to the 16th power/cu cm. At a fluence of 10 to the 16th power e/sq cm, the low-doped samples showed I sub sc degradation of 8% and V sub oc degradation of 8%. The high-doped samples showed I sub sc and V sub oc degradation of 32% and 1%, respectively, while the fill factor remained relatively unchanged for both. AMOS cells with water vapor-grown interfacial layers showed no significant change in V sub oc.

Shin, B. K.↗
NASA NTRS2002

Measured and Simulated Dark J-V Characteristics of a-Si:H Single Junction p-i-n Solar Cells Irradiated with 40 keV Electrons

The effect of 40 keV electron irradiation on a-Si:H p-i-n single-junction solar cells was investigated using measured and simulated dark J-V characteristics. EPRI-AMPS and PC-1D simulators were explored for use in the studies. The EPRI-AMPS simulator was employed and simulator parameters selected to produce agreement with measured J-V characteristics. Three current mechanisms were evident in the measured dark J-V characteristics after electron irradiation, namely, injection, shunting and a term of the form CV(sup m). Using a single discrete defect state level at the center of the band gap, good agreement was achieved between measured and simulated J-V characteristics in the forward-bias voltage region where the dark current density was dominated by injection. The current mechanism of the form CV(sup m) was removed by annealing for two hours at 140 C. Subsequent irradiation restored the CV(sup m) current mechanism and it was removed by a second anneal. Some evidence of the CV(sup m) term is present in device simulations with a higher level of discrete density of states located at the center of the bandgap.

Lord, Kenneth↗
DOE OSTI2025

Tetracene Functionalized Si(111) Achieves Enhanced Solar-to-Chemical Energy Conversion via Molecular Acceptor States

The properties of semiconductor|liquid interfaces play a critical role in determining the efficiency of solar-to-hydrogen (STH) conversion. Here, we investigate how molecular functionalization of Si(111) and Si(111)|TiO 2 surfaces impacts photoelectrochemical (PEC) hydrogen production efficiency. We find that functionalization of ∼3% of the atop sites of Si(111) with either 9-anthracene (Anth) or 5-tetracene (Tet), with the remaining sites passivated by methyl groups, provides substrates with high electronic quality and low surface oxide densities, as determined by X-ray photoelectron spectroscopy (XPS) measurements. Surface photovoltage (SPV) spectroscopy shows that surfaces modified with Anth or Tet exhibit an increased photovoltage, with Tet-functionalized surfaces yielding an additional 192 meV relative to methyl-terminated Si(111), indicating improved charge separation for Si-Tet. Further improvement in onset potential was achieved by replacing a nitrogen-containing TiO 2 atomic layer deposition (ALD) precursor (TDMAT) with a precursor lacking nitrogen (TTIP), which eliminates the parasitic defect band in the TiO 2 overlayer (p-Si(111)-Tet|TTIP-TiO 2 |Pt: V OC = +0.283 ± 0.041 V vs RHE). Density functional theory (DFT) analysis demonstrates that compared with Anth-modified Si(111), the Tet-modified surface exhibits more hybridized Si(111)-Tet states closer to the silicon band edges. Mercury contact current–voltage (I–V, dark) measurements quantified the relative interfacial density of states of Si-Tet, Si-Anth and Si-Me surfaces─revealing that the interfacial state density was highest for Si-Tet. This suggests that such hybridized interfaces serve to capture better photoexcited charge, which enables facile electron transfer to molecular acceptors in solution. Altogether, the data indicate that beneficial hybrid molecular LUMO surface states interacting with the Si conduction band edge results in improved hydrogen evolution (HER) performance for p-Si devices.

Group theory↗
NASA NTRS1972

Solar cell dark I-V characteristics and their applications.

This paper presents the preliminary results of studies conducted to evaluate the feasibility of and to generate techniques for the use of dark forward current-voltage characteristics in the checkout of the Apollo Telescope Mount Solar Array. Methods for the determination of lumped series resistance and prediction of the illuminated I-V curve using the dark characteristics are also presented. The paper addresses itself primarily to the generation of a valid performance testing and flight readiness checkout technique using the forward characteristics of the solar cell.

Imamura, M. S.↗
DOE OSTI2023

High-resolution rovibrational spectroscopy of trans -formic acid in the v 1 OH stretching fundamental: Dark state coupling and evidence for charge delocalization dynamics

High-resolution infrared (IR) reduced-Doppler absorption spectra of jet-cooled gas phase trans-formic acid in the v 1 OH stretching fundamental region are reported for the first time, obtained by supersonically expanding trans- formic acid/Ar mixtures through a slit jet nozzle source and rotationally cooling to T rot ≈ 10.9(5) K, with ab- sorption signals recorded by high-resolution difference-frequency IR absorption spectroscopy. Two a/b-type rovibrational bands of comparable intensity, one ~10-fold weaker b-type band, and one ~6-fold weaker a-type band are observed, with vibrational band origins at 3570.493(5), 3566.793(5), 3560.032(9), and 3534.6869(2) cm –1 , respectively. Based on previous Raman jet spectroscopic work by Nejad and Sibert [A. Nejad, E.L. Sibert III, The Raman jet spectrum of trans-formic acid and its deuterated isotopologs: Combining theory and experi- ment to extend the vibrational database, J. Chem. Phys. 154(6) (2021) 064301.], these four rovibrational bands have been assigned to v 1 , (v 2 + v 7 ), (v 6 + 2v 7 + 2v 9 ), and 2v 3 , respectively. Specifically, two of the three upper dark states (2 1 7 1 (a') and 6 1 7 2 9 2 (a')) are close enough to the “bright” 1 1 (a') state to facilitate strong anharmonic resonance interactions, which results in intensity mixing into the two zero-order bands that would otherwise be “dark”. Furthermore, our high-resolution spectral analysis reveals that there are local rotational crossings be- tween these zero-order 1 1 and 2 1 7 1 states resulting in extra lines (i.e., some upper levels in the nominally v 1 band have majority zero-order 2 1 7 1 state character). This motivates development of a 3 coupled state (1 1 , 2 1 7 1 , and 6 1 7 2 9 2 ) picture to aid in the spectral analysis, which is able to match all 3 observed band origins and relative band intensities, as well as indicate the necessity of multistate (> 2) coupling. Though limited by range of J and Ka levels (J’ ≤ 9 and K a ’ ≤ 3) populated at supersonic jet temperatures, this work offers first precision spec- troscopic analysis of trans-formic acid in the v 1 OH stretch region, which should aid in assignment of the more complete yet highly congested room temperature FTIR spectra. Lastly, and in sharp contrast to the spectral complexity in the three predominantly b-type bands, the lone a-type 2v 3 rovibrational band at 3534.6869(2) cm –1 is well described by a simple, rigid asymmetric top Hamiltonian.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2025

Long-lived vectors from electromagnetic cascades at SHiP

We simulate dark-vector, V, production from electromagnetic cascades at the recently approved SHiP experiment. The cascades (initiated by photons from π$^{0}$ → γγ) can lead to 3–4 orders of magnitude increase of the event rate relative to using primary production alone. We provide new SHiP sensitivity projections for dark photons and electrophilic gauge bosons, which are significantly improved compared to previous literature. The main gain in sensitivity occurs for long-lived dark vectors with masses below ~ 50 − 300 MeV. The dominant production mode in this parameter space is low-energy annihilation e$^{+}$e$^{−}$ → V (γ). This motivates a detailed study of backgrounds and efficiencies in the SHiP experiment for sub-GeV signals.

72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS↗
NASA NTRS2017

Linear Subpixel Learning Algorithm for Land Cover Classification from WELD using High Performance Computing

In this work, we use a Fully Constrained Least Squares Subpixel Learning Algorithm to unmix global WELD (Web Enabled Landsat Data) to obtain fractions or abundances of substrate (S), vegetation (V) and dark objects (D) classes. Because of the sheer nature of data and compute needs, we leveraged the NASA Earth Exchange (NEX) high performance computing architecture to optimize and scale our algorithm for large-scale processing. Subsequently, the S-V-D abundance maps were characterized into 4 classes namely, forest, farmland, water and urban areas (with NPP-VIIRS-national polar orbiting partnership visible infrared imaging radiometer suite nighttime lights data) over California, USA using Random Forest classifier. Validation of these land cover maps with NLCD (National Land Cover Database) 2011 products and NAFD (North American Forest Dynamics) static forest cover maps showed that an overall classification accuracy of over 91 percent was achieved, which is a 6 percent improvement in unmixing based classification relative to per-pixel-based classification. As such, abundance maps continue to offer an useful alternative to high-spatial resolution data derived classification maps for forest inventory analysis, multi-class mapping for eco-climatic models and applications, fast multi-temporal trend analysis and for societal and policy-relevant applications needed at the watershed scale.

Subpixel↗
NASA NTRS1994

Improved Bounds on Non-Luminous Matter in Solar Orbit

We improve, using a larger set of observations including Voyager 2 Neptune flyby data, previous bounds on the amount of dark matter (DM) trapped in a spherically symmetric distribution about the sun. We bound DM by noting that such a distribution would increase the effective mass of the sun as seen by the outer planets and by finding the uncertainty in that effective mass for Uranus and Neptune in fits to the JPL Developmental Ephermeris residuals, including optical data and those two planets' Voyager 2 flybys. We extend our previous procedure by fitting more parameters of the developmental ephemerides. Additionally, we present here the values for Pioneer 10 and 11 and Voyager 1 and 2 Jupiter ranging normal points (and incorporate these data as well).

dark matter Deep Space Network DSN Voyager Neptune↗
DOE OSTI2025

Limits on an exotic Higgs decay from a recast ATLAS four-lepton analysis

The ATLAS collaboration, using 139 fb −1 of 13 TeV collisions from the Large Hadron Collider, has placed limits on the decay of a Z boson to three dark photons. We reproduce the results of the ATLAS analysis, and then recast it as a limit on a exotic Higgs decay mode, in which the Higgs boson decays via a pair of intermediate (pseudo)scalars a to four dark photons V (or some other spin-one meson). Across the mass range for m a and m V , we find limits on the exotic Higgs branching fraction BR(H → aa → V V V V ) in the range of 4 × 10 −5 to 1 × 10 −4 .

Higgs properties↗
NASA NTRS1980

Effects of thermal annealing on the deep-level defects and I-V characteristics of 200 keV proton irradiated AlGaAs-GaAs solar cells

Detailed characterization of deep-level defects and analysis of dark I-V data in 200 keV proton irradiated AlGaAs-GaAs solar cells have been carried out for several proton fluences (5 x 10 to the 11th, 10 to the 12th, and 10 to the 13th P/sq cm), using DLTS, C-V, and I-V measurement techniques. To study the effect of low temperature thermal annealing on the deep-level defect properties, these irradiated samples were annealed in vacuum at 300 C for one hour. Comparison was then made on the measured defect parameters (i.e., defect energy levels and densities) and the dark I-V characteristics for both the annealed and unannealed samples.

Li, S. S.↗
DOE OSTI2022

Cell dark current–voltage from non-calibrated module electroluminescence image analysis

Here, we present a fast, accurate, and reliable method of obtaining cell dark current–voltage (I–V) curves from module electroluminescence (EL) images without requiring calibration or correction. For a pristine module, EL-derived dark I–V are compared to directly probed data for a variety of changing imaging parameters: camera sensor, lens, filter, aperture width, exposure time (level of sensor saturation), number of images used, and various combinations of these. Pristine modules and those experiencing different modes and degrees of degradation are examined. A recent study of modules using five different cell technologies demonstrates the practicality of our “EL sweep” technique for performance and degradation studies.

14 SOLAR ENERGY↗
NASA NTRS2014

High Current ESD Test of Advanced Triple Junction Solar Array Coupon

A test was conducted on an Advanced Triple Junction (ATJ) coupon that was part of a risk reduction effort in the development of a high-powered solar array design by SSL. The ATJ coupon was a small, 4-cell, two-string configuration that has served as the basic test coupon design used in previous SSL environmental aging campaigns. The coupon has many attributes of the flight design; e.g., substrate structure with graphite face sheets, integrated by-pass diodes, cell interconnects, RTV grout, wire routing, etc. The objective of the present test was to evaluate the performance of the coupon after being subjected to induced electrostatic discharge testing at two string voltages (100 V, 150 V) and four array current (1.65 A, 2.0 A, 2.475 A, and 3.3 A). An ESD test circuit, unique to SSL solar array design, was built that simulates the effect of missing cells and strings in a full solar panel with special primary arc flashover circuitry. A total of 73 primary arcs were obtained that included 7 temporary sustained arcs (TSA) events. The durations of the TSAs ranged from 50 μs to 2.9 ms. All TSAs occurred at a string voltage of 150 V. Post-test Large Area Pulsed Solar Simulator (LAPSS), Dark I-V, and By-Pass Diode tests showed that no degradation occurred due to the TSA events. In addition, the post-test insulation resistance measured was > 50 G-ohms between cells and substrate. These test results indicate a robust design for application to a high-current, high-power mission application.

Wright, K. H.↗
NASA NTRS2014

High Current ESD Test of Advanced Triple Junction Solar Array Coupon

Testing was conducted on an Advanced Triple Junction (ATJ) coupon that was part of a risk reduction effort in the development of a high-powered solar array design by Space Systems/Loral, LLC (SSL). The ATJ coupon was a small, 4-cell, two-string configuration that has served as the basic test coupon design used in previous SSL environmental aging campaigns. The coupon has many attributes of the flight design; e.g., substrate structure with graphite face sheets, integrated by-pass diodes, cell interconnects, RTV grout, wire routing, etc. The objective of the present test was to evaluate the performance of the coupon after being subjected to induced electrostatic discharge (ESD) testing at two string voltages (100 V, 150 V) and four array currents (1.65 A, 2.0 A, 2.475 A, and 3.3 A). An ESD test circuit, unique to SSL solar array design, was built that simulates the effect of missing cells and strings in a full solar panel with special primary arc flashover circuitry. A total of 73 primary arcs were obtained that included 7 temporary sustained arcs (TSA) events. The durations of the TSAs ranged from 50 micro-seconds to 2.75 milli-seconds. All TSAs occurred at a string voltage of 150 V. Post-test Large Area Pulsed Solar Simulator (LAPSS), Dark I-V, and By-Pass Diode tests showed that no degradation occurred due to the TSA events. In addition, the post-test insulation resistance measured was > 50 G-ohms between cells and substrate. These test results indicate a robust design for application to a high-current, high-power mission.

Wright, Kenneth H., Jr.↗
NASA NTRS2015

High Current ESD Test of Advanced Triple Junction Solar Array Coupon

A test was conducted on an Advanced Triple Junction (ATJ) coupon that was part of a risk reduction effort in the development of a high-powered solar array design by SSL. The ATJ coupon was a small, 4-cell, two-string configuration that has served as the basic test coupon design used in previous SSL environmental aging campaigns. The coupon has many attributes of the flight design; e.g., substrate structure with graphite face sheets, integrated by-pass diodes, cell interconnects, RTV grout, wire routing, etc. The objective of the present test was to evaluate the performance of the coupon after being subjected to induced electrostatic discharge testing at two string voltages (100 V, 150 V) and four array current (1.65 A, 2.0 A, 2.475 A, and 3.3 A). An ESD test circuit, unique to SSL solar array design, was built that simulates the effect of missing cells and strings in a full solar panel with special primary arc flashover circuitry. A total of 73 primary arcs were obtained that included 7 temporary sustained arcs (TSA) events. The durations of the TSAs ranged from 50 micros to 2.9 ms. All TSAs occurred at a string voltage of 150 V. Post-test Large Area Pulsed Solar Simulator (LAPSS), Dark I-V, and By-Pass Diode tests showed that no degradation occurred due to the TSA events. In addition, the post-test insulation resistance measured was > 50 G-ohms between cells and substrate. These test results indicate a robust design for application to a high-current, high-power mission application.

Wright, Kenneth H., Jr.↗
NASA NTRS1978

Study of electronic properties in proton- and electron-irradiated GaAlAs and GaAs solar cell materials

Diagnostical measurement techniques such as dark I-V, C-V, the thermally insulated capacitance, and the deep level transient spectroscopy methods were employed to study defect properties in the proton-irradiated n-GaAs materials. Defect energy levels, thermal emission rates, and capture cross sections of electrons as well as trap densities were deduced from these measurements and the results are presented. Correlations between the measured defect parameters and the dark I-V characteristics of the n-GaAs Schottky barrier diodes are also discussed. Defect energy levels (i.e., electron traps) determined are also compared with published data in order to identify their physical origins.

Li, S. S.↗
NASA NTRS1984

Limiting mechanisms in large-grain polycrystalline silicon Spatial homogeneity

An experiment to investigate the spatial homogeneity of large-grain polycrystalline silicon shows a number of performance-loss mechanisms. Arrays of up to 400 small (about 0.2 sq cm in area) photodiodes were fabricated on a selection of 10 cm x 10 cm polycrystalline silicon wafers. Measurements of the illuminated current-voltage (J-V) characteristics were used to generate maps of Voc, Jsc, and FF as a function of position; and dark J-V and LBIC analysis were used to determine the cause of low performance in areas with significantly degraded J-V characteristics. In addition to the presence of inclusions, which act as resistive shunts, the performance of many of the cells is limited by quasineutral recombination current, which may vary by up to an order of magnitude across a wafer. The increase is the result of either electrically-active grain boundaries or numerous subgrain boundaries within the grain bulk. In other isolated instances, the open-circuit voltage is reduced by excess space-charge recombination current that is not correlated with either grain or subgrain boundary activity.

Culik, J.↗
NASA NTRS1989

Room-temperature InGaAs detector arrays for 1.0 - 1.7 microns spectroscopy

Linear arrays of 256 element InGaAs detectors with 100 x 30 micron pixels were mounted in multiplexer packages and tested in an optical multichannel analyzer (OMA). Typical performance characteristics include dark current (-5V) of 400 picoamps and responsivities of 0.75 A/W (1.3 microns) and 0.14 A/W (0.85 microns). The 256 element exhibited a mean room-temperature dark current of under 400 picoamps when mounted in the OMA and a dynamic range over 11 bits (2000:1). Future applications, including room-temperature detector arrays for 2.5 microns and avalanche photodiode arrays for 1.0-1.7 microns, are discussed.

Olsen, G. H.↗
NASA NTRS1994

Measurement of n-type Dry Thermally Oxidized 6H-SiC Metal-oxide Semiconductor Diodes by Quasistatic and High-Frequency Capacitance Versus Voltage and Capacitance Transient Techniques

Dry-oxidized n-type 6H-SiC metal-oxide-semiconductor capacitors are investigated using quasistatic capacitance versus voltage (C-V), high-frequency C-V, and pulsed high-frequency capacitance transient (C-t) analysis over the temperature range from 297 to 573 K. The quasistatic C - V characteristics presented are the first reported for 6H-SiC MOS capacitors, and exhibit startling nonidealities due to nonequilibrium conditions that arise from the fact that the recombination/generation process in 6H-SiC is extraordinarily slow even at the highest measurement temperature employed. The high-frequency dark C-V characteristics all showed deep depletion with no observable hysteresis. The recovery of the high-frequency capacitance from deep depletion to inversion was used to characterize the minority-carrier generation process as a function of temperature. Zerbst analysis conducted on the resulting C-t transients, which were longer than 1000 s at 573 K, showed a generation lifetime thermal activation energy of 0.49 eV.

Neudeck, P.↗