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At least 19 records
All sourcesNASA NTRSDOE OSTI
NASA NTRS2018

Mid-infrared Spectroscopy of Pr-Doped Materials

Solid state lanthanide doped lasers primarily operate in the ultraviolet, visible, near infrared and short-wavelength infrared out to around 2.1 μm. At longer wavelengths, the transitions in conventional oxide crystal and glass materials become susceptible to multiphonon quenching due to their relatively large phonon energy. The use of low phonon materials can minimize the nonradiative quenching, opening up possibilities for solid state lanthanide lasers operating in the mid-infrared (MIR). This provides motivation to study the spectroscopy of lanthanide ions in bromide, chloride and fluoride materials, which have relatively low phonon energies. In this article, the MIR spectroscopy or praseodymium ions in five different host materials is studied, specifically KPb2Br5 (KPB), LaF3, KYF4 (KYF), BaY2F8 (BYF) and YLiF4 (YLF) host crystals. The MIR emission cross sections have been measured from 3 to 6 μm and reciprocity of absorption and emission is utilized to validate the results. The lifetime dynamics in the MIR are covered for various pump and emission wavelengths. Results are also presented on MIR emission from 6.5 to 8.5 μm in a Pr: KPB crystal, which, to the best of the authors knowledge, is the first such measurement of luminescence in this wavelength range that has been published.

Brian M Walsh↗
NASA NTRS1971

Doping explosive materials for neutron radiographic enhancement.

Discussion of studies relating to the selection of doping materials of high neutron absorption usable for enhancing the neutron radiographic imaging of explosive mixtures, without interfering with the proper chemical reaction of the explosives. The results of the studies show that gadolinium oxide is an excellent material for doping explosive mixtures to enhance the neutron radiographic image.

Golliher, K. G.↗
NASA NTRS1993

Synthesis of phthalocyanine doped sol-gel materials

The synthesis of sol-gel silica materials doped with three different types of metallophthalocyanines has been studied. Homogeneous materials of good optical quality were prepared and the first optical limiting measurements of dyes in sol-gel hosts were carried out. The properties of these solid state limiters are similar to limiters based on phthalocyanine (Pc) in solution. Sol-gel silica materials containing copper, tin and germanium phthalocyanines were investigated. The initial step in all cases was to prepare silica sols by the sonogel method using tetramethoxy silane (TMOS), HCl and distilled water. Thereafter, the synthesis depended upon the specific Pc and its solubility characteristics. Copper phthalocyanine tetrasulfonic acid tetra sodium salt (CuPc4S) is soluble in water and various doping levels (1 x 10 (exp -4) M to 1 x 10 (exp -5) M) were added to the sol. The group IV Pc's, SnPc(OSi(n-hexyl)3)2 and GePc(OSi(n-hexyl)3)2, are insoluble in water and the process was changed accordingly. In these cases, the compounds were dissolved in THF and then added to the sol. The Pc concentration in the sol was 2 x 10(exp -5)M. The samples were then aged and dried in the standard method of making xerogel monoliths. Comparative nanosecond optical limiting experiments were performed on silica xerogels that were doped with the different metallophthalocyanines. The ratio of the net excited state absorption cross section (sigma(sub e)) to the ground state cross section (sigma(sub g)) is an important figure of merit that is used to characterize these materials. By this standard the SnPc sample exhibits the best limiting for the Pc doped sol-gel materials. Its cross section ratio of 19 compares favorably with the value of 22 that was measured in toluene. The GePc materials appear to not be as useful as those containing SnPc. The GePc doped solids exhibit a higher onset energy (2.5 mj and lower cross section ratio, 7. The CuPc4S sol-gel material has a still lower cross section ratio, 4, however, the tetrasulfonate groups make the dye soluble in water which greatly facilitates its incorporation into the sol-gel matrix. The nonlinear transmission of CuPc4S in a pH 2 buffer solution and in a silica xerogel were compared. It is evident that the CuPc4S preserves its optical limiting behavior in the sol-gel matrix, indicating that the fundamental excited state absorption process is essentially the same for a molecule in solution or in the solid state. Although the spectroscopic details of energy level lifetimes are unknown, the significance is that passive optical limiting has been achieved in the solid state via incorporation of a dye into an inorganic host. The only compromise occurs at the extremely high energy regime where photobleaching is observed. This is a result of the limited mobility of the dye molecules in the solid silica host relative to a liquid host. The effects of photodegradation in the xerogel are additive, whereas the solution provides a supply of fresh molecules that are free to enter the active volume between pulses.

Dunn, Bruce↗
NASA NTRS1971

Radiation tolerance of aluminum-doped silicon

Data are presented that indicate that heat-treated Czochralski-grown aluminum doped silicon that undergoes an appreciable resistivity increase during heating at approximately 450 C is significantly more resistant to both neutron and gamma irradiation than boron doped material (or aluminum doped material that either has not been heat treated or does not experience an appreciable resistivity change during such a treatment). Data interpretation is, however, quite difficult due to the occurrence of severe trapping effects in heat treated material.

Curtis, O. L., Jr.↗
NASA NTRS2008

Tetravalent chromium doped laser materials and NIR tunable lasers

A method is described to improve and produce purer Cr.sup.4+-doped laser materials and lasers with reduced co-incorporation of chromium in any other valence states, such as Cr.sup.3+, Cr.sup.2+, Cr.sup.5+, and Cr.sup.6+. The method includes: 1) certain crystals of olivine structure with large cation (Ca) in octahedral sites such as Cr.sup.4+:Ca.sub.2GeO.sub.4, Cr.sup.4+:Ca.sub.2SiO.sub.4, Cr.sup.4+:Ca.sub.2Ge.sub.xSi.sub.1-xO.sub.4 (where 0<x<1), and/or 2) high-temperature solution growth techniques that enable the growth of the crystals below the temperature of polymorphic transitions by using low melting point solvent based on oxide, fluoride and/or chloride compounds. Purer Cr.sup.4+-doped laser materials are characterized by a relatively high concentration of Cr.sup.4+-lasing ion in crystalline host that makes these materials suitable for compact high power (thin disk/wedge) NIR laser applications.

Alfano, Robert R.↗
NASA NTRS1986

Si3N4-Based Ceramic With Greater Hot Strength

Zyttrite-doped material outperforms MgO-doped material above 1,200 degrees C. New ceramic material produced by addition of 10 weight percent zyttrite (yttria-stabilized zirconia) to (silicon nitride) offers significantly-improved high-temperature properties (those of MgO-doped Si3N4 ceramic). Work also showed that controlled Si3N4 powder with 10 weight percent zyttrite, significant improvement in room-temperature strength achieved. Variety of high-temperature structural applications are silicon nitride and silicon carbide. Potential for use in aircraft and automobile engines and in electric-power generating systems. Improved properties strongly suggest that the 10-weight percent zyttrite/Si3N4 material has strong potential for high-temperature applications.

Dutta, S.↗
NASA NTRS2005

Study of Electromagnetic Scattering From Material Object Doped Randomly With Thin Metallic Wires Using Finite Element Method

A new numerical simulation method using the finite element methodology (FEM) is presented to study electromagnetic scattering due to an arbitrarily shaped material body doped randomly with thin and short metallic wires. The FEM approach described in many standard text books is appropriately modified to account for the presence of thin and short metallic wires distributed randomly inside an arbitrarily shaped material body. Using this modified FEM approach, the electromagnetic scattering due to cylindrical, spherical material body doped randomly with thin metallic wires is studied.

Deshpande, Manohar D.↗
NASA NTRS1991

A model for the high-temperature transport properties of heavily doped n-type silicon-germanium alloys

A model is presented for the high-temperature transport properties of large-grain-size, heavily doped n-type silicon-germanium alloys. Electron and phonon transport coefficients are calculated using standard Boltzmann equation expressions in the relaxation time approximation. Good agreement with experiment is found by considering acoustic phonon and ionized impurity scattering for electrons, and phonon-phonon, point defect, and electron-phonon scattering for phonons. The parameters describing electron transport in heavily doped and lightly doped materials are significantly different and suggest that most carriers in heavily doped materials are in a band formed largely from impurity states. The maximum dimensionless thermoelectric figure of merit for single-crystal, n-type Si(0.8)Ge(0.2) at 1300 K is estimated at ZT about 1.13 with an optimum carrier concentration of n about 2.9 x 10 to the 20th/cu cm.

Vining, Cronin B.↗
NASA NTRS1974

Mechanical behavior of polycrystalline ceramics: Brittle fracture of SiC-Si3N4 materials

The first study area involved magnesium oxide and the role of anion impurities, while the second area was directed toward slow crack growth in silicon nitride-silicon carbide ceramics. The oxide program involved development of fabrication techniques for anion doped materials and evaluation of the role of these anions in the hot pressing response, grain boundary diffusion of nickel doped material, grain boundary microhardness, and grain growth.

Leipold, M. H.↗
NASA NTRS1974

Mechanical behavior of polycrystalline ceramics: Brittle fracture of SiC-Si3N4 materials

Various properties of ceramic materials were investigated. Magnesium oxide and the role of anion impurities were investigated together with the slow crack growth in silicon nitride-silicon carbide ceramics. The oxide program involved development of fabrication techniques for anion doped materials and evaluation of the role of these anions in the hot pressing response, grain boundary diffusion of nickel doped material, grain boundary microhardness, and grain growth. The carbide-nitride work employed commercial materials and the research involved evaluation of a recently reported technique for study of slow crack growth and the development of data for these commercial materials.

Leipold, M. H.↗
NASA NTRS2005

Wipes, Coatings, and Patches for Detecting Hydrazines

Three color-indicating devices have been conceived as simple, rapid, inexpensive means of detecting hazardous liquid and gaseous substances in settings in which safety is of paramount concern and it would be too time-consuming or otherwise impractical to perform detection by use of such instruments as mass spectrometers. More specifically, these devices are designed for detecting hypergolic fuels (in particular, hydrazines) and hypergolic oxidizers in spacecraft settings, where occasional leakage of these substances in liquid or vapor form occurs and it is imperative to take early corrective action to minimize adverse health effects. With suitable redesign, including reformulation of their color indicator chemicals, these devices could be adapted to detection of other hazardous substances in terrestrial settings (e.g., industrial and military ones). One of the devices is a pad of a commercially available absorbent material doped with a color indicator. The absorbent material is made from 70 percent polyester and 30 percent nylon and can absorb about eight times its own weight of liquid. The color indicator is a mixture of conventional pH color indicator chemicals. Hydrazine and monomethyl hydrazine, which are basic, cause the color indicator to turn green. In the original intended application, the pad is wiped on a space suit that is suspected of having been exposed to leaking monomethyl hydrazine during a space walk, before the wearer returns to the interior of the spacecraft. If the wiped surface is contaminated with hydrazine, the pad turns green. In addition, the pad absorbs hydrazine from the wiped surface, thereby reducing or eliminating the hazard. Used pads, including ones that show contamination by hydrazine, can be stored in a sealed plastic bag for subsequent disposal. The second device, which has been proposed but not yet developed, would comprise a color indicator material in the form of either a coating on a space suit (or other protective garment) or a coating on a sheet that could be easily attached to and detached from the protective garment. The coating material would be a hydrogel doped with a suitable pH indicator. The hydrogel would also serve to maintain a level of moisture needed to support the chemical reaction mentioned in the next sentence. In addition to changing color to indicate the presence of any hypergolic fuel (which is basic) or hypergolic oxidizer (which is acidic) that might splash on the space suit, the pH indicator would also react with the hypergolic fuel or oxidizer and thereby bind it. The third device is a color dosimeter for detecting hydrazine liquid or vapor coming from microscopic leaks. This device is designed to satisfy several requirements specific to its original intended use in the auxiliary power unit of the space shuttle. These requirements include stability under vacuum, stability at moderate temperature, fast and irreversible change in color upon exposure to hydrazine, and visibility of the color change through polyimide tape.

Young, Rebecca↗
NASA NTRS1975

Radiation effects on beta 10.6 of pure and europium doped KCl

Changes in the optical absorption coefficient as a result of X-ray and electron bombardment of pure KCl (monocrystalline and polycrystalline), and divalent europium doped polycrystalline KCl were determined. The optical absorption coefficients were measured by a constant heat flow calorimetric method. Both 300 KV X-irradiation and 2 MeV electron irradiation produced significant increases in beta 10.6, measured at room temperature. The X-irradiation of pure moncrystalline KCl increased beta 10.6 by 0.005/cm for a 113 MR dose. For an equivalent dose, 2 MeV electrons were found less efficient in changing beta 10.6. However, electron irradiation of pure and Eu-doped polycrystalline KCl produced marked increases in adsorption. Beta increased to over 0.25/cm in Eu-doped material for a 30 x 10 to the 14th power electrons/sq cm dose, a factor of 20 increase over unirradiated material. Moreover, bleaching the electron irradiated doped KCl with 649 m light produced and additional factor of 1.5 increase. These findings will be discussed in light of known defect-center properties in KCl.

Grimes, H. H.↗
NASA NTRS1997

Quasi four-level Tm:LuAG laser

A quasi four-level solid-state laser is provided. A laser crystal is disposed in a laser cavity. The laser crystal has a LuAG-based host material doped to a final concentration between about 2% and about 7% thulium (Tm) ions. For the more heavily doped final concentrations, the LuAG-based host material is a LuAG seed crystal doped with a small concentration of Tm ions. Laser diode arrays are disposed transversely to the laser crystal for energizing the Tm ions.

Jani, Mahendra G.↗
NASA NTRS2007

Conversion of type of quantum well structure

A method for converting a Type 2 quantum well semiconductor material to a Type 1 material. A second layer of undoped material is placed between first and third layers of selectively doped material, which are separated from the second layer by undoped layers having small widths. Doping profiles are chosen so that a first electrical potential increment across a first layer-second layer interface is equal to a first selected value and/or a second electrical potential increment across a second layer-third layer interface is equal to a second selected value. The semiconductor structure thus produced is useful as a laser material and as an incident light detector material in various wavelength regions, such as a mid-infrared region.

Ning, Cun-Zheng↗
NASA NTRS2007

Conversion of Type of Quantum Well Structure

A method for converting a Type 2 quantum well semiconductor material to a Type 1 material. A second layer of undoped material is placed between first and third layers of selectively doped material, which are separated from the second layer by undoped layers having small widths. Doping profiles are chosen so that a first electrical potential increment across a first layer-second layer interface is equal to a first selected value and/or a second electrical potential increment across a second layer-third layer interface is equal to a second selected value. The semiconductor structure thus produced is useful as a laser material and as an incident light detector material in various wavelength regions, such as a mid-infrared region.

Ning, Cun-Zheng↗
NASA NTRS1997

Composite multiple wavelength laser material and multiple wavelength laser for use therewith

A composite multiple wavelength laser material is provided and is typically constructed with a common axis of construction in the form of a rod of uniform cross-section. The rod comprises a plurality of segments of laser material bonded, e.g., diffusion bonded, to one another along the common axis. Each segment lases at a unique wavelength when excited to produce a laser emission. The segments can be made from a birefringent material doped with laser active ions. If the same birefringent host material is used for all segments, ground-state absorption losses can be reduced by terminating either end of the rod with end segments made from undoped pieces of the birefringent material.

Jani, Mahendra G.↗