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At least 19 records

Dielectric property of NiTiO{sub 3} doped substituted ortho-chloropolyaniline composites

Ortho-chloropolyaniline (OCP)-NiTiO{sub 3} composites have been synthesized via in-situ polymerization of ortho-chloroaniline with various weight percentages of NiTiO{sub 3.} Fourier Transform Infrared spectroscopic studies of Ortho-chloropolyaniline and its composites indicated the formation of composites as a result of Vander Waal's interaction between OCP and NiTiO{sub 3} particles. Surface morphology of OCP and OCP-NiTiO{sub 3} composites were studied using Scanning Electron Microscope (SEM). The SEM micrographs indicated a modified morphology after the composite formation. Dielectric properties and electric modulus of OCP and OCP-NiTiO{sub 3} composites have been investigated in the frequency range of 50 Hz – 5 MHz. It has been noticed that electrical resistance decreases with increase in weight percentage of NiTiO{sub 3} particles in polymer matrix as well as with applied frequency. The display of semicircular arcs in Cole-Cole plots indicates the formation of series resistor and capacitor in network causing a decrease in the relaxation time and as a result conductivity enhances in these composites. The facile and cost effective synthesis process and excellent dielectric and conductivity response of these materials makes them promising materials for practical applications.

36 MATERIALS SCIENCE↗

Tailoring dielectric properties of ferroelectric-dielectric multilayers

We develop a nonlinear thermodynamic model for multilayer ferroelectric heterostructures that takes into account electrostatic and electromechanical interactions between layers. We concentrate on the effect of relative layer fractions and in-plane thermal stresses on dielectric properties of Ba{sub 0.6}Sr{sub 0.4}TiO{sub 3}-, BaTiO{sub 3}-, and PbZr{sub 0.2}Ti{sub 0.8}O{sub 3} (PZT)-SrTiO{sub 3} (STO) multilayers on Si and c-sapphire. We show that dielectric properties of such multilayers can be significantly enhanced by tailoring the growth/processing temperature and the STO layer fraction. Our computations show that large tunabilities (∼90% at 400 kV/cm) are possible in carefully designed barium strontium titanate-STO and PZT-STO even on Si for which there exist substantially large in-plane strains.

36 MATERIALS SCIENCE↗

Effects of pyrolysis conditions on dielectric properties of PLZT films derived from a polyvinylpyrrolidone-modified sol-gel process

Graphical abstract: SEM images showing the surface morphology of PLZT films derived from solutions with various PVP content and treated with either RTA (rapid thermal annealing) or SPT (step-wise preheat treatment) process. Highlights: Black-Right-Pointing-Pointer High-quality PLZT films were fabricated by using a polyvinylpyrrolidone-modified sol-gel method. Black-Right-Pointing-Pointer Improved film density and integrity was achieved by employing a novel step-wise preheat treatment (SPT) process. Black-Right-Pointing-Pointer Enhanced dielectric properties were correlated to the improved microstructures as a result of the SPT process. -- Abstract: Pb{sub 0.92}La{sub 0.08}Zr{sub 0.52}Ti{sub 0.48}O{sub 3} (PLZT) films were deposited on platinized silicon substrates (Pt/Si) using a polyvinylpyrrolidone (PVP) modified sol-gel method. Pyrolysis of the green films was conducted via two methods: rapid thermal annealing (RTA) and a step-wise preheat treatment (SPT). Microstructure analysis and dielectric property characterization were performed on samples treated by these two methods. Results showed that the SPT-pyrolyzed films exhibited much better dielectric properties when compared with the RTA-pyrolyzed films. The differences in dielectric properties were correlated to microstructural features caused by the different pyrolysis conditions. High-quality PLZT films with high dielectric constant ( Almost-Equal-To 860 at zero bias) and high breakdown strength ( Almost-Equal-To 2.1 MV/cm) were fabricated under controlled pyrolysis conditions. This work demonstrated the potential application of this material for power electronics in electric drive vehicles.

36 MATERIALS SCIENCE↗

Electromagnetic momentum and the energy–momentum tensor in a linear medium with magnetic and dielectric properties

In a continuum setting, the energy–momentum tensor embodies the relations between conservation of energy, conservation of linear momentum, and conservation of angular momentum. The well-defined total energy and the well-defined total momentum in a thermodynamically closed system with complete equations of motion are used to construct the total energy–momentum tensor for a stationary simple linear material with both magnetic and dielectric properties illuminated by a quasimonochromatic pulse of light through a gradient-index antireflection coating. The perplexing issues surrounding the Abraham and Minkowski momentums are bypassed by working entirely with conservation principles, the total energy, and the total momentum. We derive electromagnetic continuity equations and equations of motion for the macroscopic fields based on the material four-divergence of the traceless, symmetric total energy–momentum tensor. We identify contradictions between the macroscopic Maxwell equations and the continuum form of the conservation principles. We resolve the contradictions, which are the actual fundamental issues underlying the Abraham–Minkowski controversy, by constructing a unified version of continuum electrodynamics that is based on establishing consistency between the three-dimensional Maxwell equations for macroscopic fields, the electromagnetic continuity equations, the four-divergence of the total energy–momentum tensor, and a four-dimensional tensor formulation of electrodynamics for macroscopic fields in a simple linear medium.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Microstructure and dielectric properties of piezoelectric magnetron sputtered w-Sc{sub x}Al{sub 1-x}N thin films

Piezoelectric wurtzite Sc{sub x}Al{sub 1-x}N (x = 0, 0.1, 0.2, 0.3) thin films were epitaxially grown by reactive magnetron co-sputtering from elemental Sc and Al targets. Al{sub 2}O{sub 3}(0001) wafers with TiN(111) seed and electrode layers were used as substrates. X-ray diffraction shows that an increase in the Sc content results in the degradation of the crystalline quality. Samples grown at 400 deg. C possess true dielectric behavior with quite low dielectric losses and the leakage current is negligible. For ScAlN samples grown at 800 deg. C, the crystal structure is poor and leakage current is high. Transmission electron microscopy with energy dispersive x-ray spectroscopy mapping shows a mass separation into ScN-rich and AlN-rich domains for x {>=} 0.2 when substrate temperature is increased from 400 to 800 deg. C. The piezoelectric response of epitaxial Sc{sub x}Al{sub 1-x}N films measured by piezoresponse force microscopy and double beam interferometry shows up to 180% increase by the addition of Sc up to x = 0.2 independent of substrate temperature, in good agreement with previous theoretical predictions based on density-functional theory.

36 MATERIALS SCIENCE↗

Correlated rattling-ion origins of dielectric properties in reentrant dipole glasses BaTiO{sub 3}-BiScO{sub 3}

The local structure of the pseudo-cubic solid solution 0.6BaTiO{sub 3}-0.4BiScO{sub 3}, which exhibits reentrant dipole-glass behavior, has been determined using the Reverse Monte Carlo method to simultaneously fit (1) neutron and X-ray total scattering data (including the corresponding real-space pair-distribution functions), (2) Bi and Sc extended X-ray absorption fine structure, and (3) patterns of diffuse scattering in electron diffraction. These structural refinements revealed the multi-site probability density distributions for both Bi (14-sites) and Ti (8 sites), whereas Ba and Sc featured normal unimodal distributions. Bi atoms are displaced along both the 〈111〉 and 〈100〉 directions, while Ti atoms are shifted along 〈111〉. Correlated dynamic hopping of Bi and Ti over their corresponding split sites combined with chemical disorder is proposed as the origin of the strong frequency dispersion observed in dielectric measurements. The existence of split sites also explains the reentrant dipole-glass behavior reported for this system.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Structural and optical characterization of Cr{sub 2}O{sub 3} nanostructures: Evaluation of its dielectric properties

The structural, optical and dielectric properties of as-grown Cr{sub 2}O{sub 3} nanostructures are demonstrated in this paper. Powder X-ray diffractometry analysis confirmed the rhombohedral structure of the material with lattice parameter, a = b = 4.953 Å; c = 13.578 Å, and average crystallize size (62.40 ± 21.3) nm. FE-SEM image illustrated the mixture of different shapes (disk, particle and rod) of as-grown nanostructures whereas; EDS spectrum confirmed the elemental purity of the material. FTIR spectroscopy, revealed the characteristic peaks of Cr–O bond stretching vibrations. Energy band gap (3.2 eV) of the nanostructures has been determined using the results of UV-VIS-NIR spectrophotometer. The dielectric properties of the material were checked in the wide frequency region (100Hz-30 MHz). In the low frequency region, the matrix of the dielectric behaves like source as well as sink of electrical energy within the relaxation time. Low value of dielectric loss exhibits that the materials posses good optical quality with lesser defects. The ac conductivity of the material in the high frequency region was found according to frequency power law. The physical-mechanism and the theoretical-interpretation of dielectric-properties of Cr{sub 2}O{sub 3} nanostructures attest the potential candidature of the material as an efficient dielectric medium.

36 MATERIALS SCIENCE↗

In-plane and through-plane dielectric properties of graphene oxide membrane: Effect of Al 3 + modification

A graphene oxide (GO) membrane can be used in structural dielectric capacitors and planar micro-supercapacitors as a dielectric separator material due to its excellent through-plane and in-plane dielectric properties. The ability to tailor the dielectric properties of the GO membrane is crucial for dielectric applications. We believe this to be the first demonstration describing how Al 3+ ions impact the dielectric properties of the GO membrane through cation to oxygenated functional groups interactions. In this work, the Al 3+ -modification to the GO membrane was realized through a facile pre-coordination method followed by layer-by-layer assembling. The influence of Al 3+ on the GO membranes’ through-plane and in-plane dielectric properties (dielectric constant and dielectric loss) was investigated in the frequency range from 0.01 Hz to 10 5 Hz. Plane-to-plane and edge-to-edge Al 3+ coordination with the functional group on the basal plane or edge of the GO sheets was proposed to understand the metal ion's impact on the dielectric properties. The results demonstrated that the Al 3+ modification was an effective strategy to tailoring the GO membranes’ dielectric properties in a low frequency regime and further suggested the possibility of designing dielectric GO membranes with controllable dielectric performance. At a low frequency range (0.01–1 Hz), the addition of Al 3+ increased the through-plane dielectric constant and decreased the in-plane dielectric constant. In terms of dielectric loss, unmodified GO membranes exhibited a higher in-plane dielectric loss than the through-plane dielectric loss. Al 3+ -modified GO membranes exhibited increased through-plane dielectric loss and decreased in-plane dielectric loss compared to the unmodified GO membranes.

36 MATERIALS SCIENCE↗

Dielectric Properties of BST/(Y 2 O 3 ) x (ZrO 2 ) 1-x /BST Trilayer Films

Thin films of Ba1-xSrxTiO3 (BST) are being actively investigated for applications in dynamic random access memories (DRAM) because of their properties such as high dielectric constant, low leakage current, and high dielectric breakdown strength. Various approaches have been used to improve the dielectric properties of BST thin films such as doping, graded compositions, and multilayer structures. We have found that inserting a ZrO2 layer in between two BST layers results in a significant reduction in dielectric constant as well as dielectric loss. In this work the effect of Y2O3 doped ZrO2 on the dielectric properties of BST/ZrO2/BST trilayer structure is studied. The structure Ba0.8Sr0.2TiO3/(Y2O3)x(ZrO2)1-x/Ba0.8Sr0.2TiO3 is deposited by a sol-gel process on platinized Si substrate. The composition (x) of the middle layer is varied while keeping the total thickness of the trilayer film constant. The dielectric constant of the multilayer film decreases with the increase of Y2O3 amount in the film whereas there is a slight variation in dielectric loss. In Y2O3 doped multilayer thin films, the dielectric loss is lower in comparison to other films and also there is good frequency stability in the loss in the measured frequency range and hence very suitable for microwave device applications.

14 SOLAR ENERGY↗

Mechanical and Dielectric Properties of Aligned Electrospun Fibers

This review paper examines the current state-of-the-art in fabrication of aligned fibers via electrospinning techniques and the effects of these techniques on the mechanical and dielectric properties of electrospun fibers. Molecular orientation, system configuration to align fibers, and post-drawing treatment, like hot/cold drawing process, contribute to better specific strength and specific stiffness properties of nanofibers. The authors suggest that these improved, aligned nanofibers, when applied in composites, have better mechanical and dielectric properties for many structural and multifunctional applications, including advanced aerospace applications and energy storage devices. For these applications, most fiber alignment electrospinning research has focused on either mechanical property improvement or dielectric property improvement alone, but not both simultaneously. Relative to many other nanofiber formation techniques, the electrospinning technique exhibits superior nanofiber formation when considering cost and manufacturing complexity for many situations. Even though the dielectric property of pure nanofiber mat may not be of general interest, the analysis of the combined effect of mechanical and dielectric properties is relevant to the present analysis of improved and aligned nanofibers. A plethora of nanofibers, in particular, polyacrylonitrile (PAN) electrospun nanofibers, are discussed for their mechanical and dielectric properties. In addition, other types of electrospun nanofibers are explored for their mechanical and dielectric properties. An exploratory study by the author demonstrates the relationship between mechanical and dielectric properties for specimens obtained from a rotating mandrel horizontal setup.

77 NANOSCIENCE AND NANOTECHNOLOGY↗

Heat treatment effects on dielectric properties of SRFe{sub 12}O{sub 19} hexaferrite prepared by an SHS route

The M-type Strontium Hexaferrite SRFe{sub 12}O{sub 19} particles were prepared by a Self propagating High temperature Synthesis (SHS) route. Precursors were heated under two different conditions: microwave heating for 30 minutes and sintered at 950 deg C for 4 hrs. The dielectric properties: dielectric constant ({epsilon}{sup '}), dielectric loss (tan {delta} ) and ac conductivity ({sigma}{sub ac}) were measured at room temperature in the frequency range from 100 Hz to 2 MHz. The samples present a non-linear behavior for the dielectric constant at 1 kHz, 100 kHz and 2 MHz. The dielectric properties of prepared Strontium Hexaferrite samples were discussed in view of applications as a material for microwave devices, permanent magnets and high density magnetic recording media. (author)

36 MATERIALS SCIENCE↗

Weak ferromagnetism and temperature dependent dielectric properties of Zn{sub 0.9}Ni{sub 0.1}O diluted magnetic semiconductor

Highlights: • Single phase wurtzite structure was confirmed from XRD analysis. • Weak ferromagnetic behaviour at room temperature. • Pure semiconducting properties confirmed from temperature dependent conductivity. • Smaller dielectric properties at higher frequency. • Possible potential application in high frequency spintronic devices. - Abstract: In this study the room temperature ferromagnetic behaviour and dielectric properties of ZnO based diluted magnetic semiconductor (DMS) have been investigated using nominal chemical composition Zn{sub 0.9}Ni{sub 0.1}O. The X-ray diffraction analysis confirmed formation of single phase hexagonal wurtzite structure. An increase in grain size with increasing sintering temperature was observed from scanning electron microscopy. Field dependent DC magnetization values indicated dominant paramagnetic ordering along with a slight ferromagnetic behaviour at room temperature. Frequency dependent complex initial permeability showed some positive values around 12 at room temperature. In dielectric measurement, an increasing trend of complex permittivity, loss tangent and ac conductivity with increasing temperature were observed. The temperature dependent dispersion curves of dielectric properties revealed clear relaxation at higher temperature. Frequency dependent ac conductivity was found to increase with frequency whereas complex permittivity and loss tangent showed an opposite trend.

36 MATERIALS SCIENCE↗

Structural evolution, sintering behavior and microwave dielectric properties of (1−x)Li{sub 2}TiO{sub 3} + xLiF ceramics

Graphical abstract: - Highlights: • Structure, sinterability and dielectric properties of LiF-doped Li{sub 2}TiO{sub 3} were studied. • Li{sub 2}TiO{sub 3} can be densitied (TD 98%) at lower sintering temperature by LiF additions. • Excellent microwave dielectric properties could be obtained. - Abstract: Structural evolution, sintering behavior, and microwave dielectric properties of (1−x)Li{sub 2}TiO{sub 3} + xLiF (0.05 ≤ x ≤ 0.70) ceramics have been studied by X-ray diffraction (XRD), Scanning Electron Microscopy (SEM), Raman spectra, thermal dilatometry and microwave resonant measurement at the frequency of about 7–11 GHz. The results show that Li{sub 2}TiO{sub 3} can form limited solid solution with LiF (x ≤ 0.4) and LiF second phase appeared when x{sup 3}0.5. The structure of the solid solution transformed from ordered monoclinic phase (β-Li{sub 2}TiO{sub 3} (ss)) to disordered cubic rock salt (α-Li{sub 2}TiO{sub 3} (ss)) when x{sup 3}0.15. The presence of short range ordering was confirmed for the cubic phase. The sinterability was considerably improved by doping with LiF. Densified ceramics with about 95–98% theoretical density could be obtained for the doped compositions after sintering at 900–1150 °C/2 h. An optimized microwave dielectric properties with ε{sub r} of ∼23.6, Q × f of ∼108,000 GHz and τ{sub f} of ∼4.2 ppm/°C could be obtained for the x = 0.1 composition after sintering at 1100 °C/2 h.

36 MATERIALS SCIENCE↗