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Current clamp measurements collected on various small electronic devices. Details on the data set can be found in J. M. Vann, T. P. Karnowski, R. Kerekes, C. D. Cooke and A. L. Anderson, A Dimensionally Aligned Signal Projection for Classification of Unintended Radiated Emissions, in IEEE Transactions on Electromagnetic Compatibility, vol. 60, no. 1, pp. 122-131, Feb. 2018, doi: 10.1109/TEMC.2017.2692962.
An interactive computer program, LabHEART, was developed to simulate the action potential (AP), ionic currents, and Ca handling mechanisms in a rabbit ventricular myocyte. User-oriented, its design allows switching between voltage and current clamp and easy on-line manipulation of key parameters to change the original formulation. The model reproduces normal rabbit ventricular myocyte currents, Ca transients, and APs. We also changed parameters to simulate data from heart failure (HF) myocytes, including reduced transient outward (I(to)) and inward rectifying K currents (I(K1)), enhanced Na/Ca exchange expression, and reduced sarcoplasmic reticulum Ca-ATPase function, but unaltered Ca current density. These changes caused reduced Ca transient amplitude and increased AP duration (especially at lower frequency) as observed experimentally. The model shows that the increased Na/Ca exchange current (I(NaCa)) in HF lowers the intracellular [Ca] threshold for a triggered AP from 800 to 540 nM. Similarly, the decrease in I(K1) reduces the threshold to 600 nM. Changes in I(to) have no effect. Combining enhanced Na/Ca exchange with reduced I(K1) (as in HF) lowers the threshold to trigger an AP to 380 nM. These changes reproduce experimental results in HF, where the contributions of different factors are not readily distinguishable. We conclude that the triggered APs that contribute to nonreentrant ventricular tachycardia in HF are due approximately equally (and nearly additively) to alterations in I(NaCa) and I(K1). A free copy of this software can be obtained at http://www.meddean.luc.edu/lumen/DeptWebs/physio/bers.html.
1. Membrane potential responses of dissociated gerbil type I semicircular canal hair cells to current injections in whole cell current-clamp have been measured. The input resistance of type I cells was 21.4 +/- 14.3 (SD) M omega, (n = 25). Around the zero-current potential (Vz = -66.6 +/- 9.3 mV, n = 25), pulsed current injections (from approximately -200 to 750 pA) produced only small-amplitude, pulse-like changes in membrane potential. 2. Injecting constant current to hyperpolarize the membrane to around -100 mV resulted in a approximately 10-fold increase in membrane resistance. Current pulses superimposed on this constant hyperpolarization produced larger and more complex membrane potential changes. Depolarizing currents > or = 200 pA caused a rapid transient peak voltage before a plateau. 3. Membrane voltage was able to faithfully follow sine-wave current injections around Vz over the range 1-1,000 Hz with < 25% attenuation at 1 kHz. A previously described K conductance, IKI, which is active at Vz, produces the low input resistance and frequency response. This was confirmed by pharmacologically blocking IKI. This conductance, present in type I cells but not type II hair cells, would appear to confer on type I cells a lower gain, but a much broader bandwidth at Vz, than seen in type II cells.
With the rise of renewable energy penetration in the grid, photovoltaic (PV) panels are connected to the grid via inverters to supply solar energy. Transformer-less grid-tied PV inverters are gaining popularity because of their improved efficiency, reduced size, and lower costs. However, they can induce a path for leakage currents between the PV and the grid due to the absence of galvanic isolation. This leads to serious electromagnetic interference, loss in efficiency, and safety concerns. The leakage current is primarily influenced by the nature of the common mode voltage (CMV), which is determined by the switching techniques of the inverter. In this paper, a novel inverter topology of Hysteresis Controlled H5 with Two Clamping Diodes (HCH5-D2) is derived. The HCH5-D2 topology helps decouple the AC part (Grid) and DC part (PV) during the freewheeling period to make the CMV constant, thereby reducing the leakage current. Additionally, the extra diodes help reduce voltage spikes generated during the freewheeling period and maintain the CMV at a constant value. Finally, a 2.2 kW grid-connected single-phase HCH5-D2 PV inverter system’s MATLAB simulation is presented, showing better results compared to a traditional H4 inverter.
Electrical connector clamp /bus bar/ gives high contact-surface efficiency for providing a high current to thin wall stainless steel tubing containing hydrogen gas. It uses lead solder film to provide the electrical equivalent of a fusion bond without degrading the grain structure, permitting disassembly and reuse of the components.
Lobster giant axon membrane steady state current fluctuations measured under voltage-clamp conditions, considering current potassium component
Inductive Pulsed Plasma Thruster (IPPT) pulse circuits, such as those needed to operate the Pulsed Inductive Thruster (PIT), are required to quickly switch capacitor banks operating at a period of μs while conducting current at levels on the order of at least 10 kA. [1,2] For all iterations of the PIT to date, spark gaps have been used to discharge the capacitor bank through an inductive coil. Recent availability of fast, high‐power solid state switching devices makes it possible to consider the use of semiconductor switches in modern IPPTs. In addition, novel pre‐ionization schemes have led to a reduction in discharge energy per pulse for electric thrusters of this type, relaxing the switching requirements for these thrusters. [3,4] Solid state switches offer the advantage of greater controllability and reliability, as well as decreased drive circuit dimensions and mass relative to spark gap switches. The use of solid state devices such as Integrated Gate Bipolar Transistors (IGBTs), Gate Turn‐off Thyristors (GTOs) and Silicon‐Controlled Rectifiers (SCRs) often involves the use of power diodes. These semiconductor devices may be connected antiparallel to the switch for protection from reverse current, or used to reduce power loss in a circuit by clamping off current ringing. In each case, higher circuit efficiency may be achieved by using a diode that is able to transition, or 'switch,' from the forward conducting state ('on' state) to the reverse blocking state ('off' state) in the shortest amount of time, thereby minimizing current ringing and switching losses. Silicon Carbide (SiC) PiN diodes offer significant advantages to conventional fast‐switching Silicon (Si) diodes for high power and fast switching applications. A wider band gap results in a breakdown voltage 10 times that of Si, so that a SiC device may have a thinner drift region for a given blocking voltage. [5] This leads to smaller, lighter devices for high voltage applications, as well as reduced forward conduction losses, faster reverse recovery time (faster turn‐off), and lower‐magnitude reverse recovery current. In addition, SiC devices have lower leakage current as compared to their Si counterparts, and a high thermal conductivity, potentially allowing the former to operate at higher temperatures with a smaller, lighter heatsink (or no heatsink at all).
As a promising scenario for fusion reactors, the high poloidal-beta (β P ) scenario is characterized by a strong large radius internal transport barrier (ITB), which significantly enhances the overall confinement quality and the bootstrap current fraction for fully non-inductive operation. It is frequently observed that in the presence of a strong ITB, the pedestal height is lower and is accompanied by small edge localized modes (ELMs), which further improves the compatibility of a high performance core with an edge solution. A mechanism for the formation of the low pedestal is proposed in this paper. It is found that the strong ITB creates an off-axis bootstrap current to clamp the local safety factor q, and thus the magnetic shear in the outer core/pedestal region is increased. Gyrokinetic simulations with the CGYRO code show that the higher magnetic shear brings the experimental profiles into the range where the growth rate of drift-wave instabilities and thus transport is higher, and therefore a lower pedestal gradient is expected. Here, the combination of low pedestal and high magnetic shear further enhances the turbulent transport across the whole pedestal, consistent with power balance analysis. Such a positive feedback mechanism ultimately results in a lower pressure pedestal as observed in experiments. Under such a low pedestal, linear simulations with BOUT++ predict the growth rates of peeling–ballooning modes to be lower across the whole toroidal mode number spectra, and the nonlinear BOUT++ simulation exhibits lower saturated fluctuation intensity as well, consistent with the experimentally observed lower ELM size.
This paper presents a two-stage current limiting control strategy with fault ride-through capability for the direct-droop-controlled grid-forming (GFM) inverters. The proposed approach comprises Stage 1 and Stage 2 current limiting controls. During faults, Stage 1 current limiting control instantly clamps the inverter output current magnitude to its maximum transient limit by blocking the switching pulses to the insulated-gate bipolar transistors (IGBTs) with the help of a hysteresis loop control, and Stage 2 current limiting control limits the inverter output current magnitude to its steady-state limit by regulating the amplitude and frequency of the modulating waveform utilizing the active and reactive current limiting control loops. By implementing the current limiting actions in two stages, this approach can effectively limit the over-current within a few cycles after the fault occurrence and ensure synchronism to the grid after long-term fault events. The efficacy of the proposed control approach is validated through electromagnetic transient (EMT) simulation results conducted on a single GFM inverter-based test system and the IEEE 39-bus test system with multiple GFM inverters in the PSCAD platform.
Signal detector circuit compensates for black level shifts in vidicons by dark current cancellation. It clamps the video signal to the dark current component of the signal. The device also compensates for background noise variation or transducer bias fluctuations in other repetitive pulse systems.
Pulsed inductive plasma accelerators are spacecraft propulsion devices in which energy is stored in a capacitor and then discharged through an inductive coil. The device is electrodeless, inducing a plasma current sheet in propellant located near the face of the coil. The propellant is accelerated and expelled at a high exhaust velocity (order of 10 km/s) through the interaction of the plasma current with an induced magnetic field. The Faraday Accelerator with RF-Assisted Discharge (FARAD) thruster [1,2] is a type of pulsed inductive plasma accelerator in which the plasma is preionized by a mechanism separate from that used to form the current sheet and accelerate the gas. Employing a separate preionization mechanism in this manner allows for the formation of an inductive current sheet at much lower discharge energies and voltages than those found in previous pulsed inductive accelerators like the Pulsed Inductive Thruster (PIT). In a previous paper [3], the authors presented a basic design for a 100 J/pulse FARAD laboratory-version thruster. The design was based upon guidelines and performance scaling parameters presented in Refs. [4, 5]. In this paper, we expand upon the design presented in Ref. [3] by presenting a fully-assembled and operational FARAD laboratory-model thruster and addressing system and subsystem-integration issues (concerning mass injection, preionization, and acceleration) that arose during assembly. Experimental data quantifying the operation of this thruster, including detailed internal plasma measurements, are presented by the authors in a companion paper [6]. The thruster operates by first injecting neutral gas over the face of a flat, inductive acceleration coil and at some later time preionizing the gas. Once the gas is preionized current is passed through the acceleration coil, inducing a plasma current sheet in the propellant that is accelerated away from the coil through electromagnetic interaction with the time-varying magnetic field. Neutral gas is injected over the face of the acceleration coil through a fast-acting valve that feeds a central distribution manifold. The thruster is designed to preionize the gas using an RF-frequency ringing signal produced by a discharging Vector Inversion Generator (VIG). The acceleration stage consists of a multiple-turn, multiple-strand spiral induction coil (see Fig. 1, left panel) and is designed for operation at discharge energies on the order of 100 J/pulse. Several different pulsed power train modules can be used to drive current through the acceleration coil. One such power train is based upon the Bernardes and Merryman circuit topology, which restricts voltage reversal on the capacitor banks and can be clamped to eliminate current reversal in the coil. A second option is a pulse-compression-ring power train (see Fig. 1, right panel), which takesa temporally broad, low current pulse and transforms it into a short, high current pulse.
Current ringing in an Inductive Pulsed Plasma Thruster (IPPT) can lead to reduced energy efficiency, excess heating, and wear on circuit components such as capacitors and solid state devices. Clamping off the current using a fast turn-off power diode is an effective way to reduce current ringing and increase energy efficiency. A diode with a shorter reverse recovery time will allow the least amount of current to ring back through the circuit, as well as minimize switching losses. The reverse recovery response of a new 5.8 kilovolt SiC PiN diode from Cree, Inc. in the IPPT plasma drive circuit is investigated using a physicsbased Simulink model, and compared with that of a 5SDF 02D6004 5.5 kilovolt fast-switching Si diode from ABB. Parameter extraction was carried out for each diode using both datasheet specifications and experimental waveforms, in order to most accurately adapt the model to the specific device. Further experimental data will be discussed using a flat-plate IPPT developed at NASA Marshall Space Flight Center and used to verify the simulation results. A final quantitative measure of circuit efficiency will be described for both the Si and SiC diode configuration.
A study consisting of electrochemical characterization and Low-Earth-Orbit (LEO) cycling of Li-Ion cells from three vendors was initiated in 1999 to determine the cycling performance and to infuse the new technology in the future NASA missions. The 8-cell batteries included in this evaluation are prismatic cells manufactured by Mine Safety Appliances Company (MSA), cylindrical cells manufactured by SAFT and prismatic cells manufactured by Yardney Technical Products, Inc. (YTP). The three batteries were cycle tested in the LEO regime at 40% depth of discharge, and under a charge control technique that consists of battery voltage clamp with a current taper. The initial testing was conducted at 20 C; however, the batteries were cycled also intermittently at low temperatures. YTP 20 Ah cells consisted of mixed-oxide (Co and Ni) positive, graphitic carbon negative, LIPF6 salt mixed with organic carbonate solvents. The battery voltage clamp was 32 V. The low temperature cycling tests started after 4575 cycles at 20 C. The cells were not capable of cycling. at low temperature since the charge acceptance at battery level was poor. There was a cell in the battery that showed too high an end-of-charge (EOC) voltage thereby limiting the ability to charge the rest of the cells in the battery. The battery has completed 6714 cycles. SAFT 12 Ah cells consisted of mixed-oxide (Co and NO positive, graphitic carbon negative, LiPF6 salt mixed with organic carbonate solvents. The battery voltage clamp was for 30.8 V. The low temperature cycling tests started after 4594 cycles at 20 C. A cell that showed low end of discharge (EOD) and EOC voltages and three other cells that showed higher EOC voltages limited the charge acceptance at the selected voltage limit during charge. The cells were capable of cycling at 10 C and 0 C but the charge voltage limit had to be increased to 34.3 V (4.3 V per cell). The low temperature cycling may have induced poor chargeability since the voltage had to be increased to achieve the required charge input. The battery has completed 6226 cycles. MSA 10 Ah cells consisted of Co oxide positive, graphitic carbon negative, LiPF6 salt mixed with organic carbonate solvents. The battery voltage clamp was 30.8 V. The low temperature cycling tests were started after 2182 cycles at 20 C. The cells were capable of cycling at 10 C and 0 C. Like SAFT, the voltage limit on charge had to be increased to 36 V (4.5 V per cell). There was a cell (cell S/N 13) in the battery that showed poor performance features such as low EOD voltage and high EOC voltage. The battery has completed 3441 cycles. A reconditioning procedure that consisted of C15 charge to a taper current of C/100 and C/20 discharge improved the voltage behavior of SAFT and MSA cells with no significant effect on YTP cells. We have demonstrated that the charge operation with VT clamp at battery rather than at cell level is feasible for onboard Li-Ion battery operation.
The source, nature, and frequency of occurrence of transients must be identified and a representative standard test wave chosen for proof testing. The performance of candidate suppressor devices then can be evaluated against the withstand goals set for the equipment. The various suppressors divide into two classes of generic behavior. The key to a universal procedure for evaluating both classes lies in representing transients as quasi-current sources of defined current impulse duration. The available surge current is established by the Thevenin equivalent transient voltage and source impedance. A load line drawn on the V-I characteristic graph of the suppressor quickly determines the clamping voltage and peak current. These values then can be compared to the requirement. The deposited energy and average power dissipation for multiple transients also can be calculated. The method is illustrated with a design example for motor vehicle alternator load dump suppression.
The subfornical organ (SFO) is a forebrain structure that converts peripheral blood-borne signals reflecting the hydrational state of the body to neural signals and then through efferent fibers conveys this information to several central nervous system structures. One of the forebrain areas receiving input from the SFO is the supraoptic nucleus (SON), a source of vasopressin synthesis and control of release from the posterior pituitary. Little is known of the transduction and transmission processes by which this conversion of systemic information to brain input occurs. As a step in elucidating these mechanisms, the present study characterized the ionic currents of dissociated cells of the SFO that were identified as neurons that send efferents to the SON. A retrograde tracer was injected into the SON area in eleven-day-old rats. After three days for retrograde transport of the label, the SFOs of these animals were dissociated and plated for tissue culture. The retrograde tracer was used to identify the soma of SFO cells projecting to the SON so that voltage-dependent ionic currents using whole-cell voltage clamp methods could be studied. The three types of currents in labeled SFO neurons were characterized as a 1) rapid, transient inward current that can be blocked by tetrodotoxin (TTX) characteristic of a sodium current; 2) slow-onset sustained outward current that can be blocked by tetraethylammonium (TEA) characteristic of a delayed rectifier potassium current; and 3) remaining outward current that has a rapid-onset and transient characteristic of a potassium A-type current. Copyright 1999 Elsevier Science B.V.
DC circuit breakers (DCCBs) play a significant role in obtaining the reliability and stability of DC power systems. Selective and fast isolating of faults minimizes the power supply outages to end electricity users and protects the power converters implemented in the DC system. During the last decades, DCCBs have been deeply investigated in industry and academia. There has been impressive progress in terms of efficiency, response time, power-density, lifetime, and electrical operating ratings. Introducing wide bandgap (WBG) devices further has motivated researchers to propose more efficient and novel topologies. This paper provides a point of reference and a background review for DCCBs from novel aspects, fulfilling absent parts in the literature. The elaborated subjects include current commutation circuitry, DCCBs trip-curves developments, newly added functions to DCCBs, as well as marketing analysis. The advancements of DCCBs are surveyed and development needs are recognized. This paper aims to identify the future research needs of DCCBs for emerging DC power systems.
A gasket assembly for securing a pair of surface together wherein an electrically conductive gasket base having a central opening is provided with a pair of layers secured to opposite sides of the gasket base, with the layers being a fusible alloy, a brazing alloy or a synthetic, thermoplastic material which will melt, without degrading, when the gasket base is heated. The surfaces may be secured to each other by a plurality of bolts to squeeze the gasket assembly there between or by some other clamping means. An electrical current is passed through the gasket base to heat it to a temperature sufficient to melt the layers to seal the surfaces to opposite sides of the gasket base.