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Materials Data on Cu7S4 by Materials Project

Cu7S4 crystallizes in the orthorhombic Pnma space group. The structure is three-dimensional. there are five inequivalent Cu+1.14+ sites. In the first Cu+1.14+ site, Cu+1.14+ is bonded to four S2- atoms to form a mixture of edge and corner-sharing CuS4 tetrahedra. There are a spread of Cu–S bond distances ranging from 2.29–2.35 Å. In the second Cu+1.14+ site, Cu+1.14+ is bonded in a trigonal planar geometry to three S2- atoms. There are one shorter (2.27 Å) and two longer (2.31 Å) Cu–S bond lengths. In the third Cu+1.14+ site, Cu+1.14+ is bonded to four S2- atoms to form a mixture of distorted edge and corner-sharing CuS4 tetrahedra. There are a spread of Cu–S bond distances ranging from 2.27–2.52 Å. In the fourth Cu+1.14+ site, Cu+1.14+ is bonded in a distorted trigonal planar geometry to three S2- atoms. There are a spread of Cu–S bond distances ranging from 2.27–2.34 Å. In the fifth Cu+1.14+ site, Cu+1.14+ is bonded in a distorted trigonal planar geometry to three S2- atoms. There are a spread of Cu–S bond distances ranging from 2.23–2.33 Å. There are three inequivalent S2- sites. In the first S2- site, S2- is bonded in a 6-coordinate geometry to six Cu+1.14+ atoms. In the second S2- site, S2- is bonded in a 5-coordinate geometry to five Cu+1.14+ atoms. In the third S2- site, S2- is bonded in a 6-coordinate geometry to six Cu+1.14+ atoms.

36 MATERIALS SCIENCE↗

Direct and Indirect Interfacial Electron Transfer at a Plasmonic p-Cu 7 S 4 /CdS Heterojunction

Plasmonic semiconductors exhibit significant potential for harvesting near-IR solar energy, although their mechanisms of plasmon-induced hot electron transfer (HET) are poorly understood. We report a transient absorption study of plasmon-induced HET in p-Cu 7 S 4 /CdS type II heterojunctions. Near-IR excitation of the p-Cu 7 S 4 plasmon band at ~1400 nm leads to ultrafast HET into the CdS conduction band with a time constant of <150 fs and a quantum efficiency of ~0.054%. The injected hot electrons remain in CdS with an amplitude-weighted average lifetime of 1.9 ± 0.5 ns, significantly longer than that in Au/CdS heterostructures, suggesting that plasmonic semiconductors can slow down charge recombination due to the presence of a bandgap. The excited near-IR plasmon does not decay by coupling to the interfacial charge transfer transition, likely due to its energy mismatch. This study provides a detailed mechanistic understanding and possible directions for improving plasmonic HET in plasmonic semiconductor heterojunctions.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗