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At least 19 records
All sourcesNASA NTRSDOE OSTI
NASA NTRS1990

An electron diffraction study of Bi2Sr2(Gd/x/Ca/1-x/)0.8Cu2O(8+delta)

The compound Bi2Sr2(Gd/x/Ca/1-x/)0.8Cu2O(8+delta) is examined by electron diffraction for several values of x. The incommensurate modulation which has been reported for x = 0 persists for all values of x with the wave vector increasing as x increases. A secondary modulation with a wave vector equal to one-half that of the primary is observed for x equal to or greater than 0.85. This modulation manifests itself through satellite reflections that are highly streaked normal to the (001) planes and that flank certain select positions in reciprocal space. The appearance of this secondary modulation is accompanied by a change in the average crystal structure from B-centered to F-centered orthorhombic.

Kulik, J.↗
NASA NTRS1976

Oxidation of metals and alloys in controlled atmospheres using in situ transmission electron microscopy and Auger spectrography

Single-crystalline thin films of copper were oxidized at an isothermal temperature of 425 C and at an oxygen partial pressure of .005 Torr in situ in a high-resolution electron microscope. The specimens were prepared by epitaxial vapor deposition onto polished 100 and 110 faces of rocksalt and mounted in a hot stage inside an ultra-high-vacuum specimen chamber of the microscope. Large amounts of sulfur, carbon, and oxygen were detected by Auger electron spectroscopy on the surface of the as-received films and were removed in situ by ion-sputter etching immediately prior to the oxidation. The nucleation and growth characteristics of Cu2O on Cu were studied. Results show that neither stacking faults nor dislocations are associated with the Cu2O nucleation sites. The growth of Cu2O nuclei is linear with time. The experimental findings, including results from oxygen dissolution experiments and from repetitive oxidation-reduction-oxidation sequences, fit well into the framework of an oxidation process involving (a) the formation of a surface-charge layer, (b) oxygen saturation in the metal and (c) nucleation, followed by surface diffusion of oxygen and bulk diffusion of copper for lateral and vertical oxide growth, respectively.

Rao, D. B.↗
NASA NTRS1977

In situ oxidation studies on /001/ copper-nickel alloy thin films

High-resolution transmission electron microscopy studies are reported of (001)-oriented single crystalline thin films of Cu-3%Ni, Cu-4.6%Ni, and Cu-50%Ni alloy which were prepared by vapor deposition onto (001) NaCl substrates and subsequently annealed at around 1100 K and oxidized at 725 K at low oxygen partial pressure. At all alloy concentrations, Cu2O and NiO nucleated and grew independently without the formation of mixed oxides. The shape and growth rates of Cu2O nuclei were similar to rates found earlier. For low-nickel alloy concentrations, the NiO nuclei were larger and the number density of NiO was less than that of Cu-50%Ni films for which the shape and growth rates of NiO were identical to those for pure nickel films. Phenomena involving a reduced induction period, surface precipitation, and through-thickness growth are also described. The results are consistent with previously established oxidation mechanisms for pure copper and pure nickel films.

Heinemann, K.↗
NASA NTRS2002

The General Isothermal Oxidation Behavior of Cu-8Cr-4Nb

Oxidation kinetics of Cu-8Cr-4Nb was investigated by TGA (thermogravimetric) exposures between 500 and 900-C (at 25-50 C intervals) and the oxide scale morphologies examined by microscopy and micro-analysis. Because Cu-8Cr-4Nb is comprised of fine Cr2Nb precipitates in a Cu matrix, the results were interpreted by comparison with the behavior of copper (OFHC) and 'NARloy-Z' (a rival candidate material for thrust cell liner applications in advanced rocket engines) under the same conditions. While NARloy-Z and Cu exhibited identical oxidation behavior, Cu-8Cr-4Nb differed markedly in several respects: below approx. 700 C its oxidation rates were significantly lower than those of Cu; At higher temperatures its oxidation rates fell into two categories: an initial rate exceeding that of Cu, and a terminal rate comparable to that of Cu. Differences in oxide morphologies paralleled the kinetic differences at higher temperature: While NARloy-Z and Cu produced a uniform oxide scale of Cu2O inner layer and CuO outer layer, the inner (Cu2O) layer on Cu-8Cr-4Nb was stratified, with a highly porous/spongy inner stratum (responsible for the fast initial kinetics) and a dense/blocky outer stratum (corresponding to the slow terminal kinetics). Single and spinel oxides of Nb and Cr were found at the interface between the oxide scale and Cu-8Cr-4Nb substrate and it appears that these oxides were responsible for its suppressed oxidation rates at the intermediate temperatures. No difference was found between Cu-8Cr-4Nb oxidation in air and in oxygen at 1.0 atm.

Thomas-Ogbuji, L. U.↗
NASA NTRS1975

Oxide nucleation on thin films of copper during in situ oxidation in an electron microscope

Single-crystal copper thin films were oxidized at an isothermal temperature of 425 C and at an oxygen partial pressure of 0.005 torr. Specimens were prepared by epitaxial vapor deposition onto polished faces of rocksalt and were mounted in a hot stage inside the ultrahigh-vacuum chamber of a high-resolution electron microscope. An induction period of roughly 30 min was established which was independent of the film thickness but depended strongly on the oxygen partial pressure and to exposure to oxygen prior to oxidation. Neither stacking faults nor dislocations were found to be associated with the Cu2O nucleation sites. The experimental data, including results from oxygen dissolution experiments and from repetitive oxidation-reduction-oxidation sequences, fit well into the framework of an oxidation process involving the formation of a surface charge layer, oxygen saturation of the metal with formation of a supersaturated zone near the surface, and nucleation followed by surface diffusion of oxygen and bulk diffusion of copper for lateral and vertical oxide growth, respectively.

Heinemann, K.↗
NASA NTRS1990

In-situ integrated processing and characterization of thin films of high temperature superconductors, dielectrics and semiconductors by MOCVD

In this strategy of depositing the basic building blocks of superconductors, semiconductors, and dielectric having common elements, researchers deposited superconducting films of Y-Ba-Cu-O, semiconductor films of Cu2O, and dielectric films of BaF2 and Y2O3 by metal oxide chemical vapor deposition (MOCVD). By switching source materials entering the chamber, and by using direct writting capability, complex device structures like three-terminal hybrid semiconductors/superconductors transistors can be fabricated. The Y-Ba-Cu-O superconducting thin films on BaF2/YSZ substrates show a T(sub c) of 80 K and are textured with most of the grains having their c-axis or a-axis perpendicular to the substrate. Electrical characteristics as well as structural characteristics of superconductors and related materials obtained by x-ray defraction, electron microscopy, and energy dispersive x-ray analysis are discussed.

Singh, R.↗
NASA NTRS1990

Chemical reaction of atomic oxygen with evaporated films of copper, part 4

Evaporated copper films were exposed to an atomic oxygen flux of 1.4 x 10(exp 17) atoms/sq cm per sec at temperatures in the range 285 to 375 F (140 to 191 C) for time intervals between 2 and 50 minutes. Rutherford backscattering spectroscopy (RBS) was used to determine the thickness of the oxide layers formed and the ratio of the number of copper to oxygen atoms in the layers. Oxide film thicknesses ranged from 50 to 3000 A (0.005 to 0.3 microns, or equivalently, 5 x 10(exp -9) to 3 x 10(exp -7); it was determined that the primary oxide phase was Cu2O. The growth law was found to be parabolic (L(t) varies as t(exp 1/2)), in which the oxide thickness L(t) increases as the square root of the exposure time t. The analysis of the data is consistent with either of the two parabolic growth laws. (The thin-film parabolic growth law is based on the assumption that the process is diffusion controlled, with the space charge within the growing oxide layer being negligible. The thick-film parabolic growth law is also based on a diffusion controlled process, but space-charge neutrality prevails locally within very thick oxides.) In the absence of a voltage measurement across the growing oxide, a distinction between the two mechanisms cannot be made, nor can growth by the diffusion of neutral atomic oxygen be entirely ruled out. The activation energy for the reaction is on the order of 1.1 eV (1.76 x 10(exp -19) joule, or equivalently, 25.3 kcal/mole).

Fromhold, A. T.↗
NASA NTRS1991

In-situ integrated processing and characterization of thin films of high temperature superconductors, dielectrics and semiconductors by MOCVD

In this strategy of depositing the basic building blocks of superconductors, semiconductors, and dielectrics having common elements, researchers deposited superconducting films of Y-Ba-Cu-O, semiconductor films of Cu2O, and dielectric films of BaF2 and Y2O3 by metal oxide chemical vapor deposition (MOCVD). By switching source materials entering the chamber, and by using direct writing capability, complex device structures like three terminal hybrid semiconductor/superconductor transistors can be fabricated. The Y-Ba-Cu-O superconducting thin films on BaF2/YSZ substrates show a T(sub c) of 80 K and are textured with most of the grains having their c-axis or a-axis perpendicular to the substrate. Electrical characteristics as well as structural characteristics of superconductors and related materials obtained by x-ray deffraction, electron microscopy, and energy dispersive x-ray analysis are discussed.

Singh, R.↗
NASA NTRS1992

Ellipsometric study of oxide films formed on LDEF metal samples

The optical constants of samples of six different metals (Al, Cu, Ni, Ta, W, and Zr) exposed to space on the Long Duration Exposure Facility (LDEF) were studied by variable angle spectroscopic ellipsometry. Measurements were also carried out on portions of each sample which were shielded from direct exposure by a metal bar. A least-squares fit of the data using an effective medium approximation was then carried out, with thickness and composition of surface films formed on the metal substrates as variable parameters. The analysis revealed that exposed portions of the Cu, Ni, Ta, and Zr samples are covered with porous oxide films ranging in thickness from 500 to 1000 A. The 410 A thick film of Al2O3 on the exposed Al sample is practically free of voids. Except for Cu, the shielded portions of these metals are covered by thin non-porous oxide films characteristic of exposure to air. The shielded part of the Cu sample has a much thicker porous coating of Cu2O. The tungsten data could not be analyzed.

Franzen, W.↗
NASA NTRS1992

Interaction of atomic oxygen with thin film and bulk copper: An XPS, AES, XRD, and profilometer study

The University of Alabama in Huntsville (UAH) experiment A-0114 was designed primarily to study degradation of material surfaces due to low earth orbital (LEO) atmospheric oxygen. The experiment contained 128 one inch circular samples: metals, polymers, carbons, and semiconductors. Among metal samples, copper has shown some interesting new results. Two types of copper samples, a film sputter coated on fused silica and a bulk piece of OFHC copper, were characterized employing a variety of techniques such as X-ray and Auger electron spectroscopies, X-ray diffraction, and high resolution profilometry. Cu 2p core level spectra were used to characterize the presence of Cu2O and CuO in addition to Cu Auger LMM lines. These results are supported by our recent X-ray diffraction studies which clearly establish the presence of Cu oxides which we were unable to prove in our earlier work. Profilometry showed an increase in thickness of the film sample where exposed to 106.7 +/- 0.5 nm from an initial thickness of 74.2 +/- 1.1 nm. Further studies with SEM and ellipsometry are underway.

Raikar, Genesh N.↗
NASA NTRS1992

The interaction of atomic oxygen with thin copper films

A source of thermal, ground-state atomic oxygen has been used to expose thin copper films at a flux of 1.4 x 10 exp 17 atoms/sq cm s for times up to 50 min for each of five temperatures between 140 and 200 C. Rutherford backscattering spectroscopy was used to characterize the oxide formed during exposure. The observations are consistent with the oxide phase Cu2O. The time dependence and the temperature dependence of the oxide layer thickness can be described using oxide film growth theory based on rate limitation by diffusion. Within the time and temperature ranges of this study, the growth of the oxide layers is well described by the equation L(T,t) = 3.6 x 10 to 8th exp(- 1.1/2k sub B T)t exp 1/2, where L,T, and t are measured in angstroms, degrees Kelvin, and minutes, respectively. The deduced activation energy is 1.10 +/- 0.15 eV, with the attendant oxidation rate being greater than that for the corresponding reaction in molecular oxygen.

Gibson, B. C.↗
NASA NTRS1993

Analysis of surfaces from the LDEF A0114, phase 2

During the reporting period, work continued on profilometry measurements of eroded and corroded sample surfaces, optical transmission measurements, analysis of the pinhole camera, and x-ray photoelectron spectroscopy (XPS) analysis of some samples. Among metal samples, copper showed some interesting new results. There were two forms of copper samples: a thin film sputter-coated on fused silica and a solid piece of OFHC copper. They were characterized by x-ray and Auger electron spectroscopies, x-ray diffraction, and high resolution profilometry. Cu 2p core level spectra were used to demonstrate the presence of Cu2O and CuO and to determine the oxidation states.

Gregory, John C.↗
NASA NTRS1993

The interaction of atomic oxygen with copper: An XPS, AES, XRD, optical transmission, and stylus profilometry study

The University of Alabama in Huntsville (UAH) experiment A-0114 was designed to study the reaction of material surfaces with low earth orbits (LEO) atmospheric oxygen. The experiment contained 128 one-inch circular samples; metals, polymers, carbons, and semiconductors. Half of these samples were exposed on the front of the Long Duration Exposure Facility (LDEF) and remaining on the rear. Among metal samples, copper has shown some interesting new results. There were two forms of copper samples: a thin film sputter-coated on fused silica and a solid piece of OFHC copper. They were characterized by x-ray and Auger electron spectroscopies, x-ray diffraction, and high resolution profilometry. Cu 2p core level spectra were used to demonstrate the presence of Cu2O and CuO and to determine the oxidation states.

Raikar, Ganesh N.↗
NASA NTRS1995

The thermopower in the temperature range T(sub c)-1000K and the bank spectrum of Bi-based superconductors

The temperature dependencies of thermopower, S, in the range T = T(sub c)-1000K as well as of resistivity and Hall coefficient in the range T = T(sub c)-300K for the single-phase ceramic samples Bi2Sr2Ca(1-x)Nd(x)Cu2O(y) have been measured. It was found that the S(T) dependencies in normal phase have three characteristic regions. Despite the fact that the S(T) dependencies in Bi-based high-T(sub c) superconductors (HTSC) differ essentially from ones in Y-based HTSC at T = T(sub c)-300K, the main feature of theirs (S(T) = const at high temperatures) retains in samples investigated at T is greater than 620K. The results obtained have been analyzed on the basis of the narrow-band model with the use of assumption of slight asymmetry of the conductive band. The band spectrum parameters of the samples studied have been calculated. An analysis of the tendencies in these parameters changes with samples composition varying enables to make the conclusion about the similarity of the main features of the conductive band structure in Y- and Bi-based HTSC.

Gasumyants, V. E.↗
NASA NTRS1995

The oxygen content of the high-temperature superconducting compound Bi(2+x)Sr(3-y)CayCu2O(8+d) with respect to varying Ca and Bi contents

The oxygen content of Bi(2+x)Sr(3-y)Cu2O(8+d) (2212 phase) has been determined as a function of its cation concentration. With increasing Ca and Bi content the oxygen content increases and T(sub c) decreases. The oxygen content of Ca rich 2212 phase increases with decreasing annealing temperatures. The study shows that the T(sub c) of the 2212 phase primarily is controlled by its cation concentration.

Majewski, P.↗
NASA NTRS1996

Research on high Tc superconducting compounds

Mossbauer research using the 21.54 kev resonance radiation of Eu-151 on the high temperature superconductors Bi(2)Ca(0.5)Eu(0.5)Sr(2)CU2O(x), and EuBa(2)CU(3)O(7-x) is performed. For the Bismuth compound the Mossbauer measurements gave a weak signal at room temperature but improved at lower temperatures. Experimental data indicated that europium is located at only one crystallographic site. Isomer shift measurements were .69 + 0.02 mm/s with respect to EuF(3). The linewidth at room temperature was found to be 2.54 mm/s. This value falls within the values observed by other researchers on Eu based 1,2,3 high-Tc compounds. Our results also show the Eu to be trivalent with no trace of divalent europium present. Superconducting europium based 1,2,3 compounds were prepared and measurements completed. Our results show the Eu to be trivalent with no trace of divalent europium present. These compounds had an average isomer shift of .73 mm/s +/- O.02 for all samples made. One of these was irradiated with 3.5 X 10(exp 16) neutrons and a comparison made of the Mossbauer parameters for the irradiated and non-irradiated samples. Experimental results showed no difference between linewidths but a measurable effect was seen for the isomer shift.

Oliver, Frederick W.↗
NASA NTRS2002

Comparison of the Oxidation Rates of Some New Copper Alloys

Copper alloys were studied for oxidation resistance and mechanisms between 550 and 700 C, in reduced-oxygen environments expected in rocket engines, and their oxidation behaviors compared to that of pure copper. They included two dispersion-strengthened alloys (precipitation-strengthened and oxide-dispersion strengthened, respectively) and one solution-strengthened alloy. In all cases the main reaction was oxidation of Cu into Cu2O and CuO. The dispersion-strengthened alloys were superior to both Cu and the solution-strengthened alloy in oxidation resistance. However, factors retarding oxidation rates seemed to be different for the two dispersion-strengthened alloys.

Ogbuji, Linus U. J. Thomas↗
NASA NTRS2008

Comparison of the Isothermal Oxidation Behavior of As-Cast Cu-17 Percent Cr and Cu-17 Percent Cr-5 Percent Al: Scale Microstructures - Part 2

The isothermal oxidation kinetics of as-cast Cu-17%Cr and Cu-17%Cr-5%Al in air were studied between 773 and 1173 K under atmospheric pressure. Details of the oxidation kinetics of these alloys were discussed in Part I. This paper analyzes the microstructures of the scale and its composition in an attempt to elucidate the oxidation mechanisms in these alloys. The scales formed on Cu-17%Cr specimens oxidized between 773 and 973 K consisted of external CuO and subsurface Cu2O layers. The total thickness of these scales varied from about 10 m at 773 K to about 450 m at 973 K. In contrast, thin scales formed on Cu-17%Cr-5%Al alloys oxidized between 773 and 1173 K. The exact nature of these scales could not be determined by x-ray diffraction but energy dispersive spectroscopy analyses were used to construct a scale composition map. Phenomenological oxidation mechanisms are proposed for the two alloys.

Raj, S. V.↗