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CsSe is Tetraauricupride structured and crystallizes in the cubic Pm-3m space group. The structure is three-dimensional. Cs1+ is bonded in a body-centered cubic geometry to eight equivalent Se1- atoms. All Cs–Se bond lengths are 3.77 Å. Se1- is bonded in a body-centered cubic geometry to eight equivalent Cs1+ atoms.
In this project, we attempted to make CdTe homojunctions using single crystal p-type doped substrates and closed-space sublimation epitaxy (CSSE) n-type doped films. The project included modeling which determined the ideal thickness for the n-type layer as being <200 nm. Boules of high concentration indium-doped CdTe and CdSe 0.4 Te 0.6 (CST) were grown using modified vertical Bridgman (MVB) methods. Similarly, iodine-doped CdTe crystals were grown for the first time. Washington State University (WSU) stock phosphorus-doped CdTe was used as the p-type substrate layer. The crystals were characterized by Hall effect and time-resolved photoluminescence (TRPL, for electrical properties), photoluminescence microscopy (for uniformity), X-ray diffraction (for crystal structure), and glow discharge mass spectrometry (GDMS, for dopant and impurity concentration). CdTe:I crystals were also characterized by visible and infrared transmission measurements, and various Cd or Te heat treatments were performed to assess changes in optical and electrical properties. The grown n-type materials – CdTe:In, CdSe0.4Te0.6:In, and CdTe:I – were provided to the National Renewable Energy Laboratory (NREL) for growth of CSSE thick films for characterization by two photon TRPL (for carrier lifetime), electron back-scatter diffraction (EBSD, to assess epitaxy), and Hall effect. Several measurements of secondary ion mass spectroscopy (SIMS) were performed. Nearly 100% of the indium from the crystal was incorporated into the measured thick films, while only ~2-22% of the iodine from the crystal was incorporated. The net result of the diffusion issue is that homojunction devices created using CSSE have a buried homojunction, as indicated by the near infrared peak in the external quantum efficiency (EQE). Various parameterization of front and back contacts suggested that the poor device performance was primarily a result of this buried junction and not due to other effects. There may also be an issue with the CSSE film lifetime in addition to the dopant profile.
In this study, n-type CdTe thin films, specifically iodine-doped CdTe (CdTe:I), indium-doped CdTe (CdTe:In), and indium-doped Cd-Se-Te (CST:In), were synthesized using close-spaced sublimation epitaxy (CSSE). Characterization techniques secondary ion mass spectrometry (SIMS), electron backscatter diffraction (EBSD), Hall-effect measurements, and time-resolved photoluminescence (TRPL) were employed to analyze the chemical, structural, and electronic properties of these materials. The results indicated epitaxial single crystal CSSE films grew on the single crystal substrates, with carrier density ranging from 10^14 - 10^16 cm -3 , and after post-annealing, the minority-carrier lifetimes reach near the radiative limit. Additionally, a preliminary exploration of homojunction structures with an n- type (CdTe:In /CST:In /CdTe:I) /CdTe:P /Cu /Mo configuration was performed. The best device performance was achieved with CdTe:I including CdS aiding in band alignment, resulting in a power conversion efficiency (..eta..) of 2.61% with open circuit voltage (Voc) of 850 mV, fill factor (FF) of 47.8%, and short-circuit current (Jsc) of 6.44 mA/cm 2 . The observed low Jsc and efficiency may be attributed to a buried junction and a poor interface, due to dopant interdiffusion. Consequently, further investigations focusing on interface optimization, diffusion blocking, and reduced recombination through passivation, are crucial to enhancing the efficiency of CSSE CdTe homojunction devices in the future.
A new in transit Data Service is presented and compared to the traditional file-based workflow and the newly refactored in situ Catalyst workflow. Each workflow is enabled by the IOSS mesh interface equipped with data management layers for Exodus and CGNS (file-based), Catalyst (in situ), and FAODEL (in transit). FAODEL is a distributed object store that can transmit data across MPI allocations. Catalyst is a Para View-based visualization capability developed as part of the CSSE Data Services effort. The workflows considered here take SPARC data into Catalyst for visualization post-processing. Although still in unoptimized form, we show that the in transit approach is a viable alternative to file-based and in situ workflows and offers several advantages to both simulation and post-processing developers. Since IOSS is a mature interface with wide adoption across Sandia and externally, each workflow can be reconfigured to use different simulations that generate mesh data and post-processing tools that consume it.
The final review for the FY21 Advanced Simulation and Computing (ASC) Computational Systems and Software Environments (CSSE) L2 Milestone #7840 was conducted on August 25th, 2021 at Sandia National Laboratories in Albuquerque, New Mexico. The review committee/panel unanimously agreed that the milestone has been successfully completed, exceeding expectations on several of the key deliverables.
This document is the written summary for the El Capitan System Readiness CSSE L2 Milestone from Lawrence Livermore National Laboratory. It briefly summarizes the efforts involved in preparing the El Capitan supercomputer for the local compute environment, and it describes how those efforts fulfill the requirements of ASC L2 #9235.