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Ultraviolet Laser Activation of Phosphorus-Doped Polysilicon Layers for Crystalline Silicon Solar Cells
In crystalline silicon photovoltaics (c-Si PV), a pulsed laser can be used as a substitute for a high-temperature furnace dopant diffusion/activation step. In contrast to furnace-based activation, lasers can be used to achieve highly localized doping with controlled dopant concentrations, useful in advanced architectures such as the interdigitated back contact (IBC) solar cell. In this study, a pulsed ultraviolet (UV) laser is utilized for phosphorus dopant activation within a low-pressure chemical vapor deposited (LPCVD) polycrystalline silicon (poly-Si) passivated contact layer. The highest implied open-circuit voltage iV oc values achieved using this approach reach 726 mV. However, this comes at the expense of high specific contact resistivities ρ c , which is attributed to a lower dopant concentration across the poly-Si(n + )/SiO x /c-Si interface. Regardless, the optimum iV oc , ρ c combination is measured at a laser fluence of 0.78 J cm -2 producing values of 712 mV and 89 mΩ-cm 2 , respectively. These values are still compatible with high-efficiency solar cell designs, underscoring the feasibility and effectiveness of this approach.
Broadband Light Extraction from Near-Surface NV Centers Using Crystalline-Silicon Antennas
We use crystalline silicon (Si) antennas to efficiently extract broadband single-photon fluorescence from shallow nitrogen-vacancy (NV) centers in diamond into free space. Our design features relatively easy-to-pattern high-index Si resonators on the diamond surface to boost photon extraction by overcoming total internal reflection and Fresnel reflection at the diamond-air interface and providing modest Purcell enhancement, without etching or otherwise damaging the diamond surface. In simulations, ∼17 times more single photons are collected from a single NV center compared to the case without the antenna; in experiments, we observe an enhancement of ∼9 times, limited by spatial alignment between the NV and the antenna. Furthermore, our approach can be readily applied to other color centers in diamond, and more generally to the extraction of light from quantum emitters in wide-bandgap materials.
The Crystalline Silicon Solar PV Supply Chain and U.S. Market Cost Scenarios
This presentation is an overview of crystalline silicon solar PV supply chain and cost scenarios for the U.S. Market, presented at the Crystalline Silicon Workshop in July 2025 in Breckenridge, Colorado.
Stress and Fracture of Crystalline Silicon Cells in Solar Photovoltaic Modules – A Synchrotron X-ray Microdiffraction based Investigation
Fracture of crystalline silicon (c-Si) solar cells in photovoltaic modules is a big concern to the photovoltaics (PV) industry. Cell cracks cause performance degradation and warranty issues to the manufacturers. The roots of cell fractures lie in the manufacturing and integration process of the cells and modules as they go through a series of elevated temperature and pressure processes, involving bonding of dissimilar materials, causing residual stresses. Evaluation of the exact physical mechanisms leading to these thermomechanical stresses is highly essential to quantify them and optimize the PV modules to address them. Here we present a novel synchrotron X-ray microdiffraction based techniques to characterize the stress and fracture in the crystalline silicon PV modules. We show the detailed stress state after soldering and lamination process, using the synchrotron X-ray microdiffraction experiments. We also calculate the maximum tolerable microcrack size in the c-Si cells to sustain the residual stress after lamination. We further demonstrate the effect of these residual stresses on the cell fractures using the widely accepted fracture (4-point bending) tests. These test results show that the soldering and lamination induced localized residual stresses indeed reduce the load-carrying capacity of the c-Si cells.
Different Damp-Heat-Induced Series Resistance Degradation Behaviors in Fielded Crystalline Silicon Photovoltaic Modules Due to Difference in Bill of Materials
This case study investigates mono-crystalline silicon modules from underperforming portions of a utility-scale photovoltaic power plant. Field-collected I-V curves and electroluminescence imaging suggested that increased series resistance was a primary factor driving module degradation. Selected modules were removed from the field for further analysis, including incremental damp heat accelerated testing, which confirmed a progression in series resistance degradation. Two distinct cell degradation behaviors became apparent during the investigation. Cross-sectional scanning electron microscopy (with elemental analysis) and scanning spreading resistance microscopy identified key differences between the two degradation mechanisms, primarily grid finger width and contact resistance. Additionally, the study highlights the reliability implications of retest requirements in International Electrotechnical Commission 61215 for material changes and how they may have mitigated the degradation observed at this site.
Passivating contacts for crystalline silicon solar cells
The global photovoltaic (PV) market is dominated by crystalline silicon (c-Si) based technologies with heavily doped, directly metallized contacts. Recombination of photo-generated electrons and holes at the contact regions is increasingly constraining the power conversion efficiencies of these devices as other performance-limiting energy losses are overcome. To move forward, c-Si PV technologies must implement alternative contacting approaches. Passivating contacts, which incorporate thin films within the contact structure that simultaneously supress recombination and promote charge-carrier selectivity, are a promising next step for the mainstream c-Si PV industry. Here, we review the fundamental physical processes governing contact formation in c-Si. In doing so we identify the role passivating contacts play in increasing c-Si solar cell efficiencies beyond the limitations imposed by heavy doping and direct metallization. Strategies towards the implementation of passivating contacts in industrial environments are discussed.
Field-Effect Passivation by Desired Charge Injection into SiNx Passivation in Crystalline-Silicon Solar Cells
Effective surface passivation is a necessity for high efficiency crystalline silicon solar cells. The field effect passivation of p-type surfaces is typically accomplished using aluminum oxide (Al 2 O 3 ) which contains a high density of negative fixed charges. The accumulation layer formed by the negative charges prevents surface recombination loss of photo-generated carriers by repelling minority carriers (electrons) from the surface with interface state recombination centers. However, the Al 2 O 3 surface passivation technology has two key concerns of cost and safety associated with the precursor material tri-methyl-aluminum (TMA).
Task 12 PV Sustainability - Life Cycle Assessment of Crystalline Silicon Photovoltaic Module Delamination with Hot Knife Technology
The objective of this study is to complete a life cycle assessment (LCA) of a novel technology that separates the crystalline silicon (c-Si) photovoltaic (PV) module front glass from the backsheet using hot knife technology. This is known to be the most challenging step in module recycling, where the choice of delamination approach can determine the process selection for the next steps of the recycling process, the economic value of the recovered materials, and environmental performance. The life cycle inventory (LCI) reported here is based on primary data from the technology manufacturer. Different LCIs are established following the cut-off approach and the end-of-life (EOL) approach. The environmental impacts of the hot knife delamination process are analysed based on six indicators, and the main contributors to delamination efforts are identified. For the EOL approach, the potential environmental benefits from the recovered materials are compared to the environmental impacts caused by the delamination process. The functional unit of this analysis is the delamination of 1 kg of used framed c-Si PV modules at the place of installation.
Athermal annealing of pre-existing defects in crystalline silicon
Systematic investigations of electronic energy loss (S e ) effects on pre-existing defects in crystalline silicon (Si) are crucial to provide reliance on the use of ionizing irradiation to anneal pre-existing defects, leading to successful implementation of this technology in the fabrication of Si-based devices. In this regard, the S e effects on nonequilibrium defect evolution in pre-damaged Si single crystals at 300 K has been investigated using intermediate-energy ions (12 MeV O and Si ions) that interact with the pre-damaged surface layers of Si mainly by ionization, except at the end of their range where the nuclear energy loss (S n ) is no longer negligible. Furthermore, under these irradiation conditions, experimental results and molecular dynamics simulations have revealed that pre-existing disorder in Si can be almost fully annealed by subsequent irradiation with intermediate-energy incident ions with S e values as low as 1.5–3.0 keV/nm. Selective annealing of pre-existing defect levels in Si at room temperature can be considered as an effective strategy to mediate the transient enhanced diffusion of dopants in Si. This approach is more desirable than the regular thermal annealing, which is not compatible with the processing requirements that fall below the typical thermal budget.
Neural network potential from bispectrum components: A case study on crystalline silicon
In this article, we present a systematic study on developing machine learning force fields (MLFFs) for crystalline silicon. While the main-stream approach of fitting a MLFF is to use a small and localized training set from molecular dynamics simulations, it is unlikely to cover the global features of the potential energy surface. Additionally, to remedy this issue, we used randomly generated symmetrical crystal structures to train a more general Si-MLFF. Furthermore, we performed substantial benchmarks among different choices of material descriptors and regression techniques on two different sets of silicon data. Our results show that neural network potential fitting with bispectrum coefficients as descriptors is a feasible method for obtaining accurate and transferable MLFFs.
Investigation of long-term light stability of negative charge injected into oxide-nitride-oxide passivation stack of crystalline silicon solar cells
A negatively charged oxide-nitride-oxide stack for field-effect passivation of crystalline silicon solar cells is discussed. The negative charge was injected into the stack by a plasma charge injection technology. Charge stability was studied by exposing samples to AM1.5 simulation visible light and full-spectrum light at temperatures ranging from 55 to 78 °C for up to 300 h. Charge injection and loss were quantified based on shifts in the flatband voltage of capacitance–voltage curves measured with a mercury probe. The most probable mechanism of charge loss was found to be diffusion of negative charged hydrogen atoms through nitride and bottom oxide. The optimum recipe for each layer of the stack was investigated to minimize the loss of injected charge. The flatband voltage decay of the optimized stack was found to fit a power-law trend, suggesting the dispersive transport of hydrogen atoms with a dispersion parameter of ~0.06–0.07. The optimized stack is projected to maintain a negative charge density of about 3.6 × 10 12 cm –2 or more after 25 years of field operation in an environment such as Arizona, which would be sufficient for field-effect passivation under one-sun illumination. Furthermore, the high stability of the negative injected charge makes the plasma charging technology a safer and lower cost alternative to Al 2 O 3 -passivation technology commonly used to passivate p-type surfaces.
Technoeconomic Analysis of High-Value, Crystalline Silicon Photovoltaic Module Recycling Processes
Recycling is an important circular economy strategy, and for photovoltaics (PV), the one that has received the greatest research attention. Recycling of PV modules is required in Europe; everywhere else it competes in the market of end-of-life options, where cost is a primary decision factor. The vast majority of PV modules sold globally are crystalline-silicon (c-Si); most of the rest of the market are cadmium telluride thin film modules whose primary manufacturer runs its own commercial-scale recycling program. While many different c-Si recycling approaches and technologies have been proposed, they generally lack accompanying cost estimates or enough process information to model costs. Herein we develop detailed estimates of seven categories of capital and operating costs along with estimates of revenue from recovered materials for each step in two proposed recycling processes for c-Si PV modules. Using these results, we develop a hypothetical third recycling process merging process steps from the original two, estimate surcharges required to achieve minimum sustainable prices for each recycling process, as well as consider how economies of scale could reduce costs. Increasing the purity of and identifying higher-value markets for recovered materials are approaches to reducing costs and increasing recycling rates in voluntary markets.
Polymeric Electron-Selective Contact for Crystalline Silicon Solar Cells with an Efficiency Exceeding 19%
Carrier-selective contacts have become a prominent path forward toward efficient crystalline silicon (c-Si) photovoltaics. Among the proposed contacting materials, organic materials may offer simplified and low-cost processing compared with typical vacuum deposition techniques. In this paper, branched polyethylenimine (b-PEI) is presented as an electron-transport layer (ETL) for c-Si solar cells. The incorporation of a b-PEI interlayer between c-Si(n) and Al leads to a low contact resistivity of 24 mΩ cm 2 . A silicon heterojunction solar cell integrated with b-PEI is demonstrated achieving a power conversion efficiency of 19.4%, which improves the benchmark efficiency of a c-Si solar cell with an organic ETL. This electron selectivity of b-PEI is attributed to its Lewis basicity, i.e., electron-donating ability, promoting favorable band bending at the c-Si surface for electron transport. Moreover, several other Lewis base polymers perform as efficient ETLs in organic/c-Si hybrid devices, indicating Lewis basicity could be a guideline for future organic ETL design.
Origin of the Tunable Carrier Selectivity of Atomic-Layer-Deposited TiOx Nanolayers in Crystalline Silicon Colar Cells
Titanium oxide (TiOx) nanolayers grown by atomic layer deposition are investigated with respect to their application as carrier selective contacts for crystalline silicon (c-Si) solar cells. Although TiOx is known to act as an electron contact, in this work the selectivity of TiOx layers is found to be widely tunable from electron to hole selective depending on deposition conditions, post-deposition treatments, and work function of the metal electrode used. Using TiOx and an intrinsic hydrogenated amorphous silicon buffer layer, solar cell test structure exhibiting open-circuit voltages (Voc) as high as 720 and 650 mV are shown for electron and hole selective contacts, respectively. Surface photovoltage and capacitance-voltage measurements reveal that carrier selectivity is correlated with the amount of c-Si band bending induced by TiOx, which are governed not only by the effective work function difference at the Si/TiOx interface, but also by the negative fixed charge present in the TiOx layer. This new finding is in contrast to the previous model for carrier transport where selectivity is determined only by the asymmetric band offsets at the Si/contact interface. It highlights the influence of induced band bending to produce carrier depletion/inversion conditions, and the importance of its selectivity effect in a c-Si absorber.
Employing Weibull Analysis and Weakest Link Theory to Resolve Crystalline Silicon PV Cell Strength Between Bare Cells and Reduced- and Full-Sized Modules
Weibull analysis and weakest link theory are employed to resolve the probability of crystalline silicon PV cell fracture when measured as bare cells and when stressed in reduced- and full-sized modules. Experimental results indicated that the characteristic cell strength is reduced by ~20% once packaged into the laminate of a one-cell module and loaded in four-point flexure (4PF). This experimental observation was shown consistent with a weakest link theory prediction that the strength limiting flaws reside on the surface of the cell's edge. Here, the analysis is ultimately extended to present the equivalent loading of four-cell modules by uniform pressure and 4PF and a uniformly loaded full-sized module and demonstrates that smaller, representative, modules must be loaded to a much higher level than their parent full-sized modules to achieve an equivalent probability for cell fracture.
Enabling New Approaches to Low-Cost Dopant Patterning for Interdigitated Back Contact Crystalline Silicon Solar Cells: Cooperative Research and Development, CRADA Number CRD-17-00665 (Final Report)
NREL is sub to the Department of Energy (DOE) Photovoltaic Research & Development (PVRD) project, titled "New Approaches to Low-Cost Scalable Doping for Interdigitated Back Contact Crystalline Silicon Solar Cells", awarded to Colorado School of Mines. The goal of this project was to develop an industrially relevant dopant patterning technique that enable high performing, cost efficient Interdigitated Back Contact (IBC) solar cells based on n-Cz silicon wafer. Several possibilities were explored at the beginning of the project and the masked plasma deposition was deselected as the most promising and industrially relevant. This method was thoroughly explored ion the course of the project, its limitations revealed and mitigated. NREL successfully the masked deposition integrated into the cell's process flow and produced the cells, alongside with numerous process development steps and application of in-house advanced characterization techniques. The report describes these developments by the task and in detail.
Efficient tandem solar cells with solution-processed perovskite on textured crystalline silicon
Stacking solar cells with decreasing band gaps to form tandems presents the possibility of overcoming the single-junction Shockley-Queisser limit in photovoltaics. The rapid development of solution-processed perovskites has brought perovskite single-junction efficiencies >20%. However, this process has yet to enable monolithic integration with industry-relevant textured crystalline silicon solar cells. We report tandems that combine solution-processed micrometer-thick perovskite top cells with fully textured silicon heterojunction bottom cells. To overcome the charge-collection challenges in micrometer-thick perovskites, we enhanced threefold the depletion width at the bases of silicon pyramids. Moreover, by anchoring a self-limiting passivant (1-butanethiol) on the perovskite surfaces, we enhanced the diffusion length and further suppressed phase segregation. These combined enhancements enabled an independently certified power conversion efficiency of 25.7% for perovskite-silicon tandem solar cells. These devices exhibited negligible performance loss after a 400-hour thermal stability test at 85°C and also after 400 hours under maximum power point tracking at 40°C.