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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 19 records
All sourcesNASA NTRSDOE OSTI
DOE OSTI2022

Physical Compact Model for Three-Terminal SONOS Synaptic Circuit Element

A well-posed physics-based compact model for a three-terminal silicon–oxide–nitride–oxide–silicon (SONOS) synaptic circuit element is presented for use by neuromorphic circuit/system engineers. Based on technology computer aided design (TCAD) simulations of a SONOS device, the model contains a nonvolatile memristor with the state variable QM representing the memristor charge under the gate of the three-terminal element. By incorporating the exponential dependence of the memristance on QM and the applied bias V for the gate, the compact model agrees quantitatively with the results from TCAD simulations as well as experimental measurements for the drain current. The compact model is implemented through VerilogA in the circuit simulation package Cadence Spectre and reproduces the experimental training behavior for the source–drain conductance of a SONOS device after applying writing pulses ranging from –12 V to +11 V, with an accuracy higher than 90%.

42 ENGINEERING↗
DOE OSTI2022

Physics-based compact modeling of electro-thermal memristors: Negative differential resistance, local activity, and non-local dynamical bifurcations

Leon Chua's Local Activity theory quantitatively relates the compact model of an isolated nonlinear circuit element, such as a memristor, to its potential for desired dynamical behaviors when externally coupled to passive elements in a circuit. However, the theory's use has often been limited to potentially unphysical toy models and analyses of small-signal linear circuits containing pseudo-elements (resistors, capacitors, and inductors), which provide little insight into required physical, material, and device properties. Furthermore, the Local Activity concept relies on a local analysis and must be complemented by examining dynamical behavior far away from the steady-states of a circuit. In this work, we review and study a class of generic and extended one-dimensional electro-thermal memristors (i.e., temperature is the sole state variable), re-framing the analysis in terms of physically motivated definitions and visualizations to derive intuitive compact models and simulate their dynamical behavior in terms of experimentally measurable properties, such as electrical and thermal conductance and capacitance and their derivatives with respect to voltage and temperature. Within this unified framework, we connect steady-state phenomena, such as negative differential resistance, and dynamical behaviors, such as instability, oscillations, and bifurcations, through a set of dimensionless nonlinearity parameters. In particular, we reveal that the reactance associated with electro-thermal memristors is the result of a phase shift between oscillating current and voltage induced by the dynamical delay and coupling between the electrical and thermal variables. We thus, demonstrate both the utility and limitations of local analyses to understand non-local dynamical behavior. Critically for future experimentation, the analyses show that external coupling of a memristor to impedances within modern sourcing and measurement instruments can dominate the response of the total circuit, making it impossible to characterize the response of an uncoupled circuit element for which a compact model is desired. However, these effects can be minimized by proper understanding of the Local Activity theory to design and utilize purpose-built instruments.

Brown, Timothy D. (ORCID:0000000347068355)↗
DOE OSTI2023

Graph-based Compact Modeling (GCM) of CMOS transistors for efficient parameter extraction: A machine learning approach

Parameter extraction of compact transistor models is an expensive process, heavily relying on engineering knowledge and experience. To automate such a process, we propose a novel approach, Graph-based Compact Model (GCM), that integrates physical modeling and data-driven learning. GCM utilizes Graph Neural Networks (GNNs) to establish the model structure, while retaining the physicality in compact models. Here, we implement our GCM in Verilog-A to support circuit simulations. As demonstrated with an academic 7 nm FinFET PDK, the new approach automatically generates a GCM model within a minute, and achieves excellent accuracy and efficiency in SPICE.

42 ENGINEERING↗
DOE OSTI2026

TCAD-Machine Learning Enabled TID Compact Model Development for Commercial SiC MOSFET

We propose a TCAD (Technology Computer Aided Design)-machine learning coupled approach that combines a TCAD tool (Charon), optimization/uncertainty quantification tool (Dakota), surrogate models, and Bayesian learning capabilities. The coupling approach is used for accurate modeling and calibration of total ionizing dose (TID) induced threshold voltage (V th ) shifts in Commercial-Off-The-Shelf (COTS) semiconductor devices and to develop physics-informed TID compact models. This versatile approach is applied to model the TID effect in an exemplar COTS 3.3 kV SiC power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor). With the Charon-Dakota coupling, we can determine key device geometry and doping values based on device physics, which are difficult to obtain or not available for COTS devices but important for TCAD simulation; additionally, we can efficiently generate thousands of simulation results in a large parameter space, which makes it possible to develop data-driven surrogate models and perform Bayesian calibration. Utilizing the full tool-coupling approach, we achieve calibrated TCAD simulation models that accurately capture the average TID-induced V th shifts behavior with total doses and V th shifts saturation at high doses as observed in experimental data. More importantly, the calibrated TCAD simulations are obtained with determined TID model parameters (e.g., hole trap density and capture cross section) values that contain well quantified uncertainties. Furthermore, we can isolate and quantify the noises that are not captured by the TCAD models but exist in the measured data due to measurements and devices variabilities. Lastly, the calibrated surrogate models are used to develop physics-informed TID compact models. The method is generalizable to other devices and/or radiation conditions with few modifications and can provide well-determined uncertainties.

COTS↗
DOE OSTI2024

Parameter extraction approaches for compact modeling of thermoelectric modules

Thermoelectric (TE) cooling has experienced rapid advancements with the foundational understanding of TE materials. TE modules, compact and lightweight devices, have become the prevalent approach for implementing TE technologies. Accurately quantifying TE physical parameters (Seebeck coefficient α, thermal conductivity κ, and thermal resistance ρ) is challenging due to the dynamic temperature changes in operation. Furthermore, extracting lumped property parameters is crucial for designing energy systems using TE modules. Existing research has several limitations, such as lack of comparative analysis between prevalent formulae, reliance on potentially inaccurate vendor-supplied data, disregard for fundamental assumptions, and absence of empirical measurements. Further, this study addresses these gaps by conducting TE material characterization, comparing three existing formulae using vendor datasheets, designing a laboratory test facility for model validation and refinement, and outlining a structured data extraction procedure. The study's novelty lies in multiple key contributions: (1) a detailed comparative analysis of existing formulae for extracting TE property parameter; (2) executing experimental work in a laboratory setting to validate the model and elucidate its limitations; (3) highlighting potential risks; (4) clarifying possible assumptions from both material and engineering perspectives; and (5) considering temperature differential impacts. This comprehensive approach addresses the current research gaps and provides valuable insights into the design and application of TE modules in various energy systems.

36 MATERIALS SCIENCE↗
NASA NTRS1993

A COMPACT model reduction methodology for articulated, multi-flexible bodies structures

To simulate the dynamical motion of articulated, multiflexible body structures, one can use multibody simulation packages such as DISCOS. To this end, one need appropriate reduced-order models for all the flexible components involved. The component modes projection and assembly model reduction methodology is one way to construct these reduced-order component models. However, the generated reduced-order system models typically contain high frequency extraneous modes. The presence of high frequency extraneous modes in a reduced-order system model forces us to use a small stepsize in the numerical integration of that model, resulting in an increase in the elapsed time of the integration process. To eliminate these high-frequency modes, we first identify and discard the component modes that 'contributed' to the generations of these modes. A sensitivity analysis is then used to determine how the remaining component modes should be perturbed in order to still closely capture the selected system modes. The effectiveness of the proposed methodology has been successfully verified using a finite-element model of the Galileo spacecraft.

Lee, Allan Y.↗