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All sourcesNASA NTRSDOE OSTI
NASA NTRS1998

Spectroscopy of Chlorosyl Fluoride, FClO

FClO has been proposed as an intermediate in reactions involving ClF, Cl2O, and ClF3O, and it has been suggested as a molecule of atmospheric interest. It has been prepared in situ by the hydrolysis of ClF3. The pure rotational spectrum of FClO has been studied by conventional millimeter wave techniques and by microwave Fourier transform spectroscopy. Selected transitions were searched for using predictions based on an analysis of the nu(sub 1) band. FClO is an asymmetric prolate top, kappa = -0.8950 for F(35)ClO, with a rather small dipole component of 0.093 (4) D along the a-axis and a larger one of 1.93 (5) D along the b-axis. Transitions with 0 <= J <= 54 and 0 <= K(sub a) <= 18 were observed. Cl hyperfine splitting was generally observable throughout the spectrum with F-19 spin-rotation splitting observable as well in the microwave region. Structural parameters, harmonic force constants, and nuclear magnetic shielding parameters were derived and will be compared with data of related molecules, such as ClF3, ClF, FClO2, and FClO3. High resolution infrared spectra were taken in the regions of the FCl stretching mode and bending mode around 600 and 310/cm, respectively. A preliminary analysis indicates that the FCl stretch, near 596.86/cm for F(35)ClO, is in resonance with the dark overtone of delta near 617/cm. A brief progress report will be given.

Mueller, Holger S. P.↗
NASA NTRS1987

Chemically assisted ion beam etching of polycrystalline and (100)tungsten

A chemically assisted ion-beam etching technique is described which employs an ion beam from an electron-bombardment ion source and a directed flux of ClF3 neutrals. This technique enables the etching of tungsten foils and films in excess of 40 microns thick with good anisotropy and pattern definition over areas of 30 sq mm, and with a high degree of selectivity. (100) tungsten foils etched with this process exhibit preferred-orientation etching, while polycrystalline tungsten films exhibit high etch rates. This technique can be used to pattern the dispenser cathode surfaces serving as electron emitters in traveling-wave tubes to a controlled porosity.

Garner, Charles↗
NASA NTRS1989

Patterning of dispenser cathode surfaces to a controlled porosity

A process to pattern slots approximately 1.25 microns in width into 25-micron-thick W films that have been deposited onto flat or concave surfaces is discussed. A 25-micron-thick W film with a high degree of (100) orientation is chemically vapor deposited (CVD) onto a flat or concave Mo mandrel. A 5-micron-thick Al film is deposited onto the CVD W, followed by 2 microns of photoresist. On concave cathodes, XeCl2 laser ablation or X-ray lithography is used to pattern the photoresist, whereas on flat cathodes deep UV lithography can be used. The patterned photoresist serves as the mask in a Cl ion-beam-assisted etching (IBAE) process to pattern the Al. An alternative process is to deposit Al2O3 films onto the W and pattern the Al2O3 using laser ablation. The W film is then patterned to 3-6-micron slot widths using IBAE + ClF3 with the patterned Al or Al2O3 as the mask. Finally, a sputter deposition step is required to close up the slots to approximately 1 micron. The process described is capable of patterning concave dispenser cathodes to a controlled and precise porosity.

Garner, Charles E.↗