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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 19 records

Solenoid-Simulation Circuit

Electrical properties of solenoids imitated for tests of control circuits. Simulation circuit imitates voltage and current responses of two engine-controlling solenoids. Used in tests of programs of digital engine-control circuits, also provides electronic interface with circuits imitating electrical properties of pressure sensors and linear variable-differential transformers. Produces voltages, currents, delays, and discrete turnon and turnoff signals representing operation of solenoid in engine-control relay. Many such circuits used simulating overall engine circuitry.

Simon, R. A.↗

Incorporating ADAPT-VQE with a Sparse Wavefunction Circuit Simulator to Find Compact Quantum Circuits for Chemical Applications

We implemented the ADAPT-VQE algorithm into our recent classical sparse wavefunction circuit simulator to demonstrate that classical resources can (1) efficiently find a physically motivated compact wavefunction ansatz for further refinement on near-term quantum hardware and (2) benchmark expected results of VQE-based algorithms once the quantum hardware is available to study large-scale applications. In particular, we study the role of the ADAPT-VQE operator pool, molecular basis set selection, and variations such as TETRIS-ADAPT-VQE on the performance of our classical circuit simulator. This work demonstrates the promise of using classical resources to generate highly accurate wavefunctions that can be prepared on quantum hardware to initiate other quantum algorithms such as phase estimation. Our approach harnesses the power of high-performance computing resources with the more limited available quantum computers to map a path toward quantum advantage for electronic structure calculations in chemistry and materials science.

Quantum Computing↗

VLSI circuit simulation using a vector computer

Simulation of circuits having more than 2000 active devices requires the largest, fastest computers available. A vector computer, such as the CYBER 205, can yield great speed and cost advantages if efforts are made to adapt the simulation program to the strengths of the computer. ASPEC and SPICE (1), two widely used circuit simulation programs, are discussed. ASPECV and VAMOS (5) are respectively vector adaptations of these two simulators. They demonstrate the substantial performance enhancements possible for this class of algorithm on the CYBER 205.

Mcgrogan, S. K.↗

Model Reduction by Generalized Falk Method for Efficient Field-Circuit Simulations

The Generalized Falk Method (GFM) for coordinate transformation, together with two model-reduction strategies based on this method, are presented for efficient coupled field-circuit simulations. Each model-reduction strategy is based on a decision to retain specific linearly-independent vectors, called trial vectors, to construct a vector basis for coordinate transformation. The reduced-order models are guaranteed to be stable and passive since the GFM is a congruence transformation of originally symmetric positive definite systems. We also show that, unlike the Pad´e-via-Lanczos (PVL) method, the GFM does not generate unstable positive poles while reducing the order of circuit problems. Further, the proposed GFM is also faster when compared to methods of the type Lanczos (or Krylov) that are already widely used in circuit simulations for electrothermal and electromagnetic problems. The concept of response participation factors is introduced for the selection of the trial vectors in the proposed model-reduction methods. Further, we present methods to develop simple equivalent circuit networks for the field component of the overall field-circuit system. The implementation of these equivalent circuit networks in circuit simulators is discussed. With the proposed model-reduction strategies, significant improvement on the efficiency of the generalized Falk method is illustrated for coupled field-circuit problems.

42 ENGINEERING↗

Modeling and Simulation of Power-Electronic Inverters in Analog Electronic Circuit Simulators

This paper demonstrates how equivalent-circuit representations of grid-following power-electronic inverters can be realized within a SPICE-based development environment using common circuit components and VerilogA code. This facilitates computationally lean simulations of inverter networks leveraging the strengths of SPICE in large-scale simulations. We validate the approach with time-domain simulations for a modified version of the IEEE standard 118-bus system modeled in Virtuoso (a SPICE-based solver). Simulation results are compared-focusing on accuracy and computation speed-with results from a commonly used power-electronics simulation package. We note a significant decrease in simulation time with comparable signal resolution when simulating the network in SPICE.

Billmeyer, Ryan↗

Deep quantum circuit simulations of low-energy nuclear states

Numerical simulation is an important method for verifying the quantum circuits used to simulate low-energy nuclear states. However, real-world applications of quantum computing for nuclear theory often generate deep quantum circuits that place demanding memory and processing requirements on conventional simulation methods. Here, we present advances in high-performance numerical simulations of deep quantum circuits to efficiently verify the accuracy of low-energy nuclear physics applications. Our approach employs novel methods for accelerating the numerical simulation including management of simulated mid-circuit measurements to verify projection based state preparation circuits. In this study, we test these methods across a variety of high-performance computing systems and our results show that circuits up to 21 qubits and more than 115,000,000 gates can be efficiently simulated.

72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS↗

A study of ignition and simulation circuits for arcjet thrusters, part 1

A 1 kW electronic load was programmed to simulate the nonlinear i-v (volt-ampere) characteristics of an arcjet, both ignited and unignited. The simulator was tested and found to closely resemble an arcjet both for large transients and small perturbances up to about 40 kHz. No attempt was made to simulate the ignition process itself. The dynamic behavior of the arcjet (and the simulator) was shown to differ significantly from that of a resistor bank. Previous research led to the design and construction of a 1 kW arcjet power supply. A high voltage ignition circuit was added to this hardware, and tests on a 1 kW arcjet were performed at NASA-Lewis. All tests were successful and no ignition failures were observed. Circuit documentation and test results are included.

Stuart, Thomas A.↗

Density Matrix Quantum Circuit Simulation via the BSP Machine on Modern GPU Clusters

As quantum computers evolve, simulations of quantum programs on classical computers will be essential in validating quantum algorithms, understanding the effect of system noise, and design applications for future quantum computers. In this paper, we propose a novel multi-GPU programming model called MG-BSP that constructs a virtual BSP machine on top of modern multi-GPU platforms, and tweak the programming model to build a multi-GPU density matrix quantum simulator. We propose and evaluated a new formulation minimizing communication and prove that the transformation conserves original semantics when noise is introduced. We build the tool-chain to support quantum assembly open standard, synthesize testing quantum circuit, and enable ultra-deep quantum simulation. We evaluated our design on four state-of-the-art multi-GPU platforms including the latest DGX-1 and DGX-2 systems. We demonstrate simulation of 1 million gates in 94 minutes, far deeper circuits than has been demonstrated in prior work. A roofline-model analysis show that we have reached near-optimal performance under memory bound.

Li, Ang↗

Method for Coupled Electromagnetic and Circuit Simulations to Evaluate Surge Arrester Performance in Protecting Equipment Against E1 HEMP

Surge arrester behavioral modeling for realistic systems embedded in an E1 high-altitude electromagnetic pulse environment inherently encompasses three interconnected complications: (1) the need to account for signal propagation across two domains, electromagnetics and electrical; (2) the need to include both linear and nonlinear circuit components in the analysis; and (3) the need to understand that the over-current and over-voltage mitigation performance is dependent not only on the properties of the surge arrester and protected load but also on the topology of the overall electrical network. This study presents a framework to address these challenges in a systematic manner to consider the effectiveness of protective measures for a common class of equipment in power generation facilities. Full-wave simulations were carried out to derive circuit-domain (i.e., lumped element–based) equivalent models for the excitation waveform and the physical components of the system. Then, these equivalent models were imported to a circuit solver and combined with a high-frequency surge arrester model to evaluate mitigation performance. The methodology outlined is general enough such that it can be applied for other electromagnetic interference problems that involve E2/E3 HEMP or microwave emissions.

42 ENGINEERING↗

Bipolar junction transistor models for circuit simulation of cosmic-ray-induced soft errors

This paper examines bipolar junction transistor models suitable for calculating the effects of large excursions of some of the variables determining the operation of a transistor. Both the Ebers-Moll and Gummel-Poon models are studied, and the junction and diffusion capacitances are evaluated on the basis of the latter model. The most interesting result of this analysis is that a bipolar junction transistor when struck by a cosmic particle may cause a single event upset in an electronic circuit if the transistor is operated at a low forward base-emitter bias.

Benumof, R.↗

Device model for FETSIM circuit simulation program

A description of the MOS transistor used in the FETSIM analysis program is presented. CMOS/SOS device parameters are included. Typical device mobilities are given as well as the empirically determined constants necessary to model second-order effect conductance variations due to gate voltage and saturated drain voltage.

Ramondetta, P.↗