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At least 19 records
All sourcesNASA NTRSDOE OSTI
DOE OSTI2025

Chern Insulators at Integer and Fractional Filling in Moiré Pentalayer Graphene

The advent of moiré platforms for engineered quantum matter has led to discoveries of integer and fractional quantum anomalous Hall effects, with predictions for correlation-driven topological states based on electron crystallization. Here, we report an array of trivial and topological insulators formed in a moiré lattice of rhomobohedral pentalayer graphene (R5G). At a doping of one electron per moiré unit cell ( ν = 1 ), we see a correlated insulator with a Chern number that can be tuned between C = 0 and + 1 by an electric displacement field. This is accompanied by a series of additional Chern insulators with C = + 1 originating from fractional fillings of the moiré lattice— ν = 1 / 4 , 1 / 3 , and 2 / 3 —associated with the formation of moiré-driven topological electronic crystals. At ν = 2 / 3 the system exhibits an integer quantum anomalous Hall effect at zero magnetic field, but further develops hints of an incipient C = 2 / 3 fractional Chern insulator in a modest field. Our results establish moiré R5G as a fertile platform for studying the competition and potential intertwining of integer and fractional Chern insulators. Published by the American Physical Society 2025

Waters, Dacen (ORCID:0000000335880039)↗
DOE OSTI2025

Edge-driven transition between extended quantum anomalous Hall crystal and fractional Chern insulator in rhombohedral graphene multilayers

Fractional Chern insulators (FCI) with fractionally quantized Hall conductance at fractional fillings and an extended quantum anomalous Hall (EQAH) crystal with an integer quantized Hall conductance over an extended region of doping were recently observed in pentalayer graphene. One particularly puzzling observation is the transition between the EQAH and FCI regimes, driven either by temperature or electrical current. Here, in this study, we propose a scenario to understand these transitions based on the topologically protected gapless edge modes that are present in both the FCI and EQAH phases and should be most relevant at temperature scales below the energy gap. Our consideration is based on the simple assumption that the edge velocity in FCI is smaller than that in EQAHE and thus contributes to a higher entropy. We further argue that domains with opposite fractionally quantized Hall conductance are ubiquitous in the devices due to disorder, which gives rise to a network of edge modes. The velocity of the edge modes between domains is further reduced due to edge reconstruction. The edge velocity can also be reduced by current when the occupation of the edge mode approaches the gap edge. The edge entropy therefore drives the transition from EQAH to FCI either by temperature or current at a nonzero temperature.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2026

Optical control of integer and fractional Chern insulators

Optical control of topology, particularly in the presence of electron correlations, is an interesting topic with broad scientific and technological impact. Twisted MoTe 2 bilayer (tMoTe 2 ) is a zero-field fractional Chern insulator (FCI), exhibiting the fractionally quantized anomalous Hall effect. As the chirality of the edge states and sign of the Chern number are determined by the underlying ferromagnetic polarization, manipulation of ferromagnetism would realize control of the Chern insulator (CI)/FCI states. Here, in this work, we demonstrate control of ferromagnetic polarization, and thus the CI and FCI states, by circularly polarized optical pumping in tMoTe 2 . At low excitation power, we achieve on-demand preparation of ferromagnetic polarization by optical training, that is, electrically tuning the system from non-ferromagnetic to desirable ferromagnetic states under helicity-selective optical pumping. With increased excitation power, we further realize direct optical switching of ferromagnetic polarization at a temperature far below the Curie temperature. Both optical training and direct switching are most effective near CI and FCI states, which we attribute to a gap-enhanced valley polarization of optically pumped holes. The magnetization can be dynamically switched by modulating the helicity of optical excitation. Spatially resolved measurements further demonstrate optical writing of ferromagnetic, and thus CI (or FCI) domains. Our work realizes precise optical control of a topological quantum many-body system with potential applications in topological spintronics, quantum memories and creation of exotic edge states by programmable patterning of integer and fractionally quantized anomalous Hall domains.

ferromagnetism↗
DOE OSTI2024

Even–Odd Layer-Dependent Exchange Bias Effect in MnBi 2 Te 4 Chern Insulator Devices

Magnetic topological materials with coexisting magnetism and nontrivial band structures exhibit many novel quantum phenomena, including the quantum anomalous Hall effect, the axion insulator state, and the Weyl semimetal phase. As a stoichiometric layered antiferromagnetic topological insulator, thin films of MnBi 2 Te 4 show fascinating even–odd layer-dependent physics. Here, in this work, we fabricate a series of thin-flake MnBi 2 Te 4 devices using stencil masks and observe the Chern insulator state at high magnetic fields. Upon magnetic field training, a large exchange bias effect is observed in odd but not in even septuple layer (SL) devices. Through theoretical calculations, we attribute the even–odd layer-dependent exchange bias effect to the contrasting surface and bulk magnetic properties of MnBi 2 Te 4 devices. Our findings reveal the microscopic magnetic configuration of MnBi 2 Te 4 thin flakes and highlight the challenges in replicating the zero magnetic field quantum anomalous Hall effect in odd SL MnBi 2 Te 4 devices.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2024

Quantum-metric-induced quantum Hall conductance inversion and reentrant transition in fractional Chern insulators

The quantum metric of single-particle wave functions in topological flat bands plays a crucial role in determining the stability of fractional Chern insulating (FCI) states. Here, we unravel that the quantum metric causes the many-body Chern number of the FCI states to deviate sharply from the expected value associated with partial filling of the single-particle topological flat band. Furthermore, the variation of the quantum metric in momentum space induces band dispersion through interactions, affecting the stability of the FCI states. This causes a reentrant transition into the Fermi liquid from the FCI phase as the interaction strength increases. Published by the American Physical Society 2024

Wu, Ang-Kun (ORCID:0000000270181674)↗
DOE OSTI2025

Towards Floquet Chern insulators of light

Topological photonics explores photonic systems that exhibit robustness against defects and disorder, enabled by protection from underlying topological phases. These phases are typically realized in linear optical systems and characterized by their intrinsic photonic band structures. Here we experimentally study Floquet Chern insulators in periodically driven nonlinear photonic crystals, where the topological phase is controlled by the polarization and the frequency of the driving field. Our transient sum-frequency generation measurements reveal strong hybridization of the Floquet photonic bands. The measured spectrum remains gapless under a linearly polarized drive but becomes gapped under a circularly polarized drive. Theoretical analysis confirms that the Floquet gap is topological, characterized by a non-zero Chern number—a consequence of time-reversal symmetry breaking induced by the circularly polarized driving field. Furthermore, this work offers opportunities to explore the role of classical optical nonlinearity in topological phases and their applications in nonlinear optoelectronics.

36 MATERIALS SCIENCE↗
DOE OSTI2024

Local probe of bulk and edge states in a fractional Chern insulator

The fractional quantum Hall effect is a key example of topological quantum many-body phenomena, arising from the interplay between strong electron correlation, topological order and time-reversal symmetry breaking. Recently, a lattice analogue of the fractional quantum Hall effect at zero magnetic field has been observed, confirming the existence of a zero-field fractional Chern insulator (FCI). Despite this, the bulk–edge correspondence—a hallmark of a FCI featuring an insulating bulk with conductive edges—has not been directly observed. In fact, this correspondence has not been visualized in any system for fractional states owing to experimental challenges. Here we report the imaging of FCI edge states in twisted MoTe 2 (t-MoTe 2 ) using microwave impedance microscopy. By tuning the carrier density, we observe the system evolving between metallic and FCI states, the latter of which exhibits insulating bulk and conductive edges, as expected from the bulk–boundary correspondence. Further analysis suggests the composite nature of the FCI edge states. We also observe the evolution of edge states across the topological phase transition as a function of interlayer electric field and reveal exciting prospects of neighbouring domains with different fractional orders. Furthermore, these findings pave the way for research into topologically protected one-dimensional interfaces between various anyonic states at zero magnetic field, such as gapped one-dimensional symmetry-protected phases with non-zero topological entanglement entropy, Halperin–Laughlin interfaces and the creation of non-abelian anyons.

Imaging techniques↗
DOE OSTI2026

Altermagnetism Induced Surface Chern Insulator

We propose a new pathway to the quantized anomalous Hall effect (QAHE) by coupling an altermagnet to a topological crystalline insulator (TCI). The former gaps the topological surface states of the TCI, thereby realizing the QAHE in a robust and switchable platform with near-vanishing magnetization. We demonstrate the feasibility of this approach by studying a slab of the TCI SnTe coupled to an altermagnetic RuO 2 layer. Our first-principles calculations reveal that the d-wave altermagnetism in RuO 2 induces a 7 meV gap to the Dirac surface states on the (110) surface of SnTe, producing a finite anomalous Hall effect. Our approach generalizes to broader classes of altermagnetic materials and TCIs, thereby providing a family of topological altermagnetic heterostructures with small or vanishing magnetization that support nontrivial Chern numbers. In conclusion, our results highlight a promising new topological platform with great tunability and applications to spintronics.

36 MATERIALS SCIENCE↗
DOE OSTI2025

Tunable high spin Chern-number insulator phases in strained Sb monolayer

High spin Chern-number insulators (HSCI) have emerged as a novel 2D topological phase of condensed matter that is beyond the classification of topological quantum chemistry. The HSCI phase with two pairs of gapless helical edge states is robust even in the presence of spin–orbit coupling due to the protection of a “hidden” feature spectrum topology. Here, in this work, we report the observation of a semimetallic Sb monolayer carrying the same band topology as HSCI with the spin Chern number equal to 2. Our calculations further indicate a moderate lattice strain can make Sb monolayer an insulator or a semimetal with a tunable spin Chern number from 0 to 3. The results suggest strained Sb monolayers as a promising platform for exploring exotic properties of the HSCI topological matter.

36 MATERIALS SCIENCE↗
DOE OSTI2024

Theory of topological exciton insulators and condensates in flat Chern bands

Excitons are the neutral quasiparticles that form when Coulomb interactions create bound states between electrons and holes. Due to their bosonic nature, excitons are expected to condense and exhibit superfluidity at sufficiently low temperatures. In interacting Chern insulators, excitons may inherit the nontrivial topology and quantum geometry from the underlying electron wavefunctions. We theoretically investigate the excitonic bound states and superfluidity in flat-band insulators pumped with light. We find that the exciton wavefunctions exhibit vortex structures in momentum space, with the total vorticity being equal to the difference of Chern numbers between the conduction and valence bands. Moreover, both the exciton binding energy and the exciton superfluid density are proportional to the Brillouin-zone average of the quantum metric and the Coulomb potential energy per unit cell. Spontaneous emission of circularly polarized light from radiative decay is a detectable signature of the exciton vorticity. We propose that the vorticity can also be experimentally measured via the nonlinear anomalous Hall effect, whereas the exciton superfluidity can be detected by voltage-drop quantization through a combination of quantum geometry and Aharonov–Casher effect. Topological excitons and their superfluid phase could be realized in flat bands of twisted Van der Waals heterostructures.

Science & Technology - Other Topics↗
DOE OSTI2025

Experimental signature of layer skyrmions and implications for band topology in twisted WSe 2 bilayers

Twisted homobilayers of transition-metal dichalcogenides have been established as an ideal platform for studying strong correlation phenomena, as exemplified by the recent discovery of fractional Chern insulator states in twisted MoTe 2 , as well as Chern insulators and unconventional superconductivity in twisted WSe 2 . In these systems, a non-trivial topology in the strongly layer-hybridized regime can arise from a spatial patterning of interlayer tunnelling amplitudes and layer-dependent potentials that yields a lattice of layer skyrmions. Here, in this work, we report experimental signatures of skyrmion textures in the layer degree of freedom of rhombohedral-stacked twisted WSe 2 homobilayers. Using scanning tunnelling spectroscopy that separately resolves the Γ-valley and K-valley moiré electronic states, we reveal opposite layer polarizations of the K valley at two different lattice sites with opposite stacking order within the moiré unit cell. These findings are consistent with the theoretically predicted layer-skyrmion texture. We also use our experimental results to parameterize a common continuum model of moiré bands in twisted bilayers, further establishing a direct correlation between the shape of the local density of states in real space and the topology of the topmost moiré band.

electronic properties and materials↗
DOE OSTI2025

Electromagnetic response and emergent topological orders in transition metal dichalcogenide MoTe 2 bilayers

Twisted bilayer transition metal dichalcogenides, such as MoTe 2 , provide a versatile platform for exploring correlated topological phases. This work investigates the interplay between perpendicular magnetic and electric fields in tuning the electronic structure and emergent topological orders of twisted bilayer MoTe 2 (t-MoTe 2 ) across two distinct regimes: a low-twist-angle phase (θ ≈ 2.1°) hosting multiple Chern bands of identical Chern numbers per valley, and a higher-angle phase (θ ≈ 3.89°) featuring Haldane-like bands with opposite Chern numbers. Using a continuum model incorporating moiré potentials up to second harmonics, we compute the Hofstadter fractal spectra under applied fields, revealing Landau fan structures and magnetic-flux-dependent band topology. These fractal spectra are useful in studying emergent topological orders in terms of the composite fermion picture, where the statistical Chern-Simons flux is approximated as a uniform gauge field. We demonstrate that the system hosts both Jain-sequence fractional Chern insulators (FCIs) and non-Jain fractal FCIs with higher Chern numbers. As a result, the electric field suppresses composite fermion gaps and induces topological quantum phase transitions. Furthermore, our analysis extends to valley-contrasting flux attachment, proposing pathways to describe fractional quantum spin Hall states.

Anyons↗
DOE OSTI2025

Fractional Quantum Anomalous Hall Effect

The realization of the fractional quantum anomalous Hall effect (FQAHE) in a zero-field fractional Chern insulator is a new advancement in condensed matter physics, resulting from the interplay among strong correlations, topology, and spontaneous time-reversal symmetry breaking in lattice systems. In this review, we highlight the experimental and theoretical progress toward achieving FQAHE in two material platforms: twisted bilayer MoTe 2 and rhombohedral-stacked multilayer graphene. These systems host narrow topological bands with nontrivial Chern numbers, enabling interaction-driven fractionalized states analogous to the fractional quantum Hall effect, but without external magnetic fields. We discuss how spontaneous ferromagnetism, moiré lattice reconstruction, and band topological effects underpin the emergence of FQAHE in twisted MoTe 2 . We describe experimental discoveries of zero-field fractional Chern insulators in both transport and optical experiments, as well as signatures of composite Fermi liquids and higher-energy Chern band, which may shed light on engineering nonabelian states. In rhombohedral graphene/hexagonal boron nitride moiré superlattices, we review the recent observations of fractionally quantized Hall resistance, connections between FQAHE and extended quantum anomalous Hall phases, and the coexistence of superconductivity and FQAHE. Furthermore, these discoveries not only deepen our understanding of strongly correlated topological matter but also open new frontiers for exploring nonabelian anyons, fault-tolerant quantum computation, and topological opto-spintronics free of magnetic fields.

bilayer↗
DOE OSTI2025

Terahertz Landau level spectroscopy of Dirac fermions in millimeter-scale twisted bilayer graphene

Exotic electronic physics including correlated insulating states and fractional Chern insulators have been observed in twisted bilayer graphene in a magnetic field when the Fermi velocity vanishes; however, a question remains as to the stability of these states, which is controlled by the gap to the first excited state. Free-space terahertz magneto-optics can directly probe the gap to charge excitations, which bounds the stability of electronic states, but this measurement has thus far been inaccessible due to the micron size of twisted bilayer graphene samples, while the wavelength of terahertz light is up to 1 mm. Here we leverage advances in fabrication to create twisted bilayer graphene samples over 5×5 mm in size with a uniform twist angle and study the magnetic field dependence of the cyclotron resonance by a complex Faraday rotation experiment in 𝑝-doped large angle twisted bilayer graphene. These measurements directly probe charge excitations in inter-Landau level transitions and determine the Fermi velocity as a function of twist angle.

Mead, Benjamin [University of Pennsylvania]↗
DOE OSTI2025

Terahertz Landau level spectroscopy of Dirac fermions in millimeter-scale twisted bilayer graphene

Exotic electronic physics including correlated insulating states and fractional Chern insulators have been observed in twisted bilayer graphene in a magnetic field when the Fermi velocity vanishes, however a question remains as to the stability of these states which is controlled by the gap to the first excited state. Free-space terahertz magneto-optics can directly probe the gap to charge excitations which bounds the stability of electronic states, but this measurement has thus-far been inaccessible due to the micron size of twisted bilayer graphene samples, while the wavelength of terahertz light is up to a millimeter. Here we leverage advances in fabrication to create twisted bilayer graphene samples over 5 mm x 5 mm in size with a uniform twist angle and study the magnetic field dependence of the cyclotron resonance by a complex Faraday rotation experiment in p-doped large angle twisted bilayer graphene. These measurements directly probe charge excitations in inter-Landau level transitions and determine the Fermi velocity as a function of twist angle.

36 MATERIALS SCIENCE↗
DOE OSTI2024

Adiabatic approximation and Aharonov-Casher bands in twisted homobilayer transition metal dichalcogenides

Topological flat moiré bands with nearly ideal quantum geometry have been identified in homobilayer transition metal dichalcogenide moiré superlattices, and are thought to be crucial for understanding the fractional Chern insulating states recently observed therein. Previous study proposed viewing the system using an adiabatic approximation that replaces the position dependence of the layer spinor with a nonuniform periodic effective magnetic field. When the local zero-point kinetic energy of this magnetic field cancels identically against that of an effective Zeeman energy, a Bloch-band version of Aharonov-Casher zero-energy modes, which we refer to as Aharonov-Casher band, emerges leading to ideal quantum geometry. Here, we critically examine the validity of the adiabatic approximation and identify the parameter regimes under which Aharonov-Casher bands emerge. We show that the adiabatic approximation is accurate for a wide range of parameters including those realized in experiments. Furthermore, we show that while the cancellation leading to the emergence of Aharonov-Casher bands is generally not possible beyond the leading Fourier harmonic, the leading harmonic is the dominant term in the Fourier expansions of the zero-point kinetic energy and Zeeman energy. Finally, the leading harmonic expansion accurately captures the trend of the bandwidth and quantum geometry, although it may fail to quantitatively reproduce more detailed information about the bands such as the Berry curvature distribution.

36 MATERIALS SCIENCE↗