Engineering Papers⌕ Search

SEARCH · Engineering Papers

Results for “Cell Fabrication”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.

At least 19 records
All sourcesNASA NTRSDOE OSTI
DOE OSTI2023

Nonradiative Recombination Dominates Voltage Losses in Cu(In,Ga)Se 2 Solar Cells Fabricated using Different Methods

Voltage losses reduce the photovoltaic conversion efficiency of thin‐film solar cells and are a primary efficiency limitation in Cu(In,Ga)Se 2 . Herein, voltage loss analysis of Cu(In,Ga)Se 2 solar cells fabricated at three institutions with variation in process, bandgap, absorber structure, postdeposition treatment (PDT), and efficiency is presented. Nonradiative voltage losses due to Shockley–Read–Hall charge carrier recombination dominate and constitute >75% of the total compared to <25% from radiative voltage losses. The radiative voltage loss results from nonideal absorption and carriers in band tails that stem from local composition‐driven potential fluctuations. It is shown that significant bulk lifetime improvements are achieved for all alkali PDT processed absorbers, chiefly associated with reductions in nonradiative recombination. Primary voltage loss contributions (radiative and nonradiative) change little across fabrication processes, but variation in submechanisms (bulk lifetime, net acceptor concentration, and interface recombination) differentiate nonradiative loss pathways in this series of solar cells.

14 SOLAR ENERGY↗
DOE OSTI2026

15.3% AM1.5G Efficiency GaAs Solar Cells Fabricated via an Epitaxy-Free Process

Here, we report simple and potentially low-cost techniques for creating high-quality n-type gallium arsenide (GaAs) and GaAs p/n junctions and fabricate GaAs p/n junction solar cells. Detailed-balance modeling suggests that 20% AM1.5G efficiency p/n homojunction devices may be possible if the surface doping concentration can be limited to values less than ∼ 5 × 10 19 cm −3 . Our process exploits an open-tube, vapor-phase, deposition-free, zinc diffusion technique for forming p-type layers in melt-grown n-GaAs substrates that results in sheet resistances less than 1 kΩ/$\square$. In addition, we have improved the minority carrier diffusion lengths of melt-grown GaAs from less than one micron to over five microns using an open-tube, vacuum-free, annealing process which reduces the density of EL2 midgap defects. Finally, we have combined these advances to fabricate epitaxy-free, GaAs solar cells with a validated AM1.5G efficiency of 15.3%.

14 SOLAR ENERGY↗
DOE OSTI2023

Nanopinhole Passivating Contact Si Solar Cells Fabricated with Metal-Assisted Chemical Etching

Monocrystalline Si (c-Si) solar cells with passivating contacts based on doped polycrystalline Si (poly-Si) on ≈2.0 nm silicon oxide (SiO x ) require >1000 °C thermal processing to create conducting pinholes in the SiO x layer. However, this high thermal budget can induce bulk defects in the Czochralski c-Si wafers used as the cell absorber layer. We demonstrate that pinholes can instead be created using metal-assisted chemical etching on planar or textured morphologies, at room temperature. This wet process creates up to 200 nm wide conducting pinholes that are directly observed with transmission electron and atomic force microscopies. High-performance hole-selective poly-Si/SiN y /SiO x and electron-selective poly-Si/SiO x passivating contacts are fabricated and implemented in laboratory-scale solar cells. This process development significantly broadens the range of passivation layer materials, their thicknesses, and surface morphologies, which enables the design of poly-Si contacts with superior passivating quality.

14 SOLAR ENERGY↗
DOE OSTI2024

Effects of transparent conducting electrodes and hole transport layers on the performance of MAPbI 3 solar cells fabricated on PET substrates

Abstract This study investigates how the performance of perovskite solar cells (PSCs) made on polyethylene terephthalate (PET) substrates depends on transparent conducting electrodes (TCEs) and hole transport layers (HTLs). We fabricated PSCs using commercially available PET/TCEs and compared their performance with PSCs manufactured on Glass/indium tin oxide (ITO) substrates. Poly(3,4-ethylenedioxythiophene):polystyrene sulfonate (PEDOT:PSS) with varying levels of acidity and NiO nanoparticles were used as HTLs. The current density-voltage characteristics of PSCs made on PET/TCEs were found to be significantly lower when highly acidic PEDOT:PSS was used as the HTL. However, this was not observed for PSCs made on Glass/ITO. To investigate the interaction between HTL and TCE, atomic force microscopy was carried out after dipping the TCEs in PEDOT:PSS solutions of different acidity. X-ray photoelectron spectroscopy measurements further revealed differences in the chemical composition between ITO film on PET vs. on glass. Our results indicate that the performance of PSCs depends both on the TCE substrates and HTLs, which can be explained by their chemical interaction.

14 SOLAR ENERGY↗
DOE OSTI2025

Toward Quality Control in Perovskite Solar Cell Fabrication: Spot-Like Processing Defects Disrupt Charge Transport Layers and Promote Ag Metal Electrode Intrusion

Metal halide perovskite (MHP) photovoltaics provide high efficiencies with less stringent processing requirements than traditional photovoltaic materials. However, processing related defects must be suppressed as they can lead to decreases in initial device efficiency and potentially compromise long-term device operation. In this work we investigate morphological defects in MHP devices using luminescence imaging followed by in-depth structural and composition analysis using electron microscopy-based methods. We identify several different classes of spot-like processing-related defects and observe that a single device structure may contain multiple types of these defects. The presence of these defects in devices with different layer structures and absorber chemistries makes them relevant to the perovskite photovoltaic community as a whole. The defects are associated with voids in the perovskite layer, inclusions (glass, migrated Ag, dust), thickness variations, hole transport layer disruption with anomalous crystal growth, and electron transport layer disruptions that could allow Ag intrusion and lead to local shunts. As perovskite photovoltaic technology matures, mitigation of such defects is critical to improving not only initial performance but also the long-term stability required for industrial applications.

14 SOLAR ENERGY↗
DOE OSTI2024

Development of APCVD BSG and POCl 3 Codiffusion Process for Double-Side TOPCon Solar Cell Precursor Fabrication

This paper presents a commercially viable process for fabricating a high-quality double-side tunnel oxide passivating contact (DS-TOPCon) cell precursor using APCVD-deposited boron silicate glass and ex-situ POCl 3 diffusion in a single high-temperature step, eliminating the need for additional masking and diffusion processes. A two-tier temperature profile was developed, involving a pre-annealing at above 900°C in nitrogen (N2) ambient followed by POCl 3 diffusion at 840°C. We investigated the effect of varying pre-annealing temperatures, ranging from 875°C to 950°C, on the passivation quality and metal-Si contact properties of both n-TOPCon and p-TOPCon layers. The resultant DS-TOPCon cell precursor after silicon nitride (SiNX) passivation exhibited an excellent iV OC of close to 730 mV. In addition, a rapid asymmetric poly-Si thinning technique, developed in this work, enabled adjustment of the front n + poly-Si thickness while maintaining the rear p + poly-Si thickness. Two types of DS-TOPCon cell architectures can be fabricated: i) full-area thin (≈40nm) n-TOPCon layer on the front and ii) selective-area thick (≈200nm) n-TOPCon fingers underneath the metal grid. Device simulations suggest that full-area DS-TOPCon cell with 40 nm n + poly-Si and selective-area DS-TOPCon cell with 200 nm n + poly fingers on the front, fabricated from our current DS-TOPCon cell precursor, can achieve cell efficiencies of 22.1 and 23.5%, respectively. Detailed power loss analysis and device simulation reveal that further improvements in material and device parameters have potential to push the cell efficiencies of DS-TOPCon cell structure beyond 25%, making it a promising alternative to fabricate a high-efficiency next-generation solar cells at low cost.

14 SOLAR ENERGY↗
DOE OSTI2024

A Highly Efficient and Affordable Hybrid System for Hydrogen and Electricity Production (Final Project)

The pursuit of clean, secure, and sustainable energy has sparked significant interest in fuel cells for power generation and electrolyzer cells for hydrogen production. Among all types of fuel and electrolyzer cells, solid oxide cells (SOCs) have emerged as promising candidates due to their high efficiency and versatility. However, conventional oxygen-ion conductive SOCs face several challenges related to their performance and durability associated with their high-temperature operation (≥ 800 ºC). This has led to a growing interest in intermediate-temperature (≤ 650 ºC) proton-conducting solid oxide cells (p-SOCs) as potential alternatives. In collaboration between Phillips 66 and Georgia Tech, this project aims to achieve a 1 kW p-SOCs system to demonstrate the commercial viability of efficient SOC systems. This report addresses four primary areas and key challenges we overcame: (1) development of efficient and durable proton-conducting electrolyte (e.g., BaHf 0.1 Ce 0.7 Yb 0.2 O 3-δ ) and electrode/catalyst materials, (2) large area cell fabrication (10 x 10 cm 2 ), (3) scalable stack design and building (250 W and 1 kW), and (4) demonstration of a 1 kW prototype system. Notably, significant challenges faced during the large area cell fabrication process were addressed by achieving cell flatness, improving fabrication yield, and ensuring electrode/electrolyte interfacial adhesion. Stack designs were also developed, focusing on reducing contact resistance and optimizing stack components (e.g., sealants). These efforts resulted in the achievement of high performance and durability with promising outputs of 250 W and 1 kW. Furthermore, the integration of these stacks into a fuel-powered system was explored, with refinements made to heat management, as well as to pressure and heating conditions. The results demonstrated the potential applicability of our p-SOC technology in commercial energy storage and power generation systems. Additionally, the report discusses techno-economic analysis and a market transformation plan, aiming to evaluate and advance the commercial feasibility of this technology.

25 ENERGY STORAGE↗
DOE OSTI2023

Recent advancements in high performance polymer electrolyte fuel cell electrode fabrication – Novel materials and manufacturing processes

The global effort to introduce polymer electrolyte fuel cells for clean and renewable energy to the market is increasing the demand for high performance, robust and affordable membrane electrode assemblies (MEAs). There is not yet a standard method for large scale production of MEAs, or the methods employed are generally unsatisfactory in terms of quality and performance. A large number of published data of newly developed catalyst and electrolyte materials, claim to improve the state of the art, but are often not fully comparable due to different experimental studies and experimental designs. This article summarizes the trends in material developments and emerging MEA-manufacturing techniques. The materials and techniques are systematically compared in terms of cell performance and scalability. Current and future scientific challenges are identified and analysed based on published findings over the past five years. Finally, the results of the cited papers have been quantitatively compared to each other and to the internal benchmarks used in each cited work to provide a complete picture of the state of the art in PEFC MEA manufacturing.

25 ENERGY STORAGE↗
DOE OSTI2023

Tape Casting of Thin Electrolyte and Thick Cathode for Halide-Based All-Solid-State Batteries

Most previous studies about halide solid-state electrolytes have used pellets prepared by uniaxial pressing, which is a good approach for materials development but is not suitable for commercialization. Thinner electrolyte layers that can be scaled up to large cell areas are required, and tape casting is a promising approach. It is challenging, however, as halide materials are reactive with most of the conventional solvents used in the process. In this study, solvents with low polarity, such as toluene, are found to be compatible with the Li 3 YBr 6 halide material. A wide variety of candidate binders that are soluble in toluene are studied. MSB1–13 binder is preferred, based on the ionic conductivity and mechanical properties of the tape. Electrolyte tapes (<70 μ m) are successfully cast on Al substrates, using 2 wt% binder. The resulting room temperature ionic conductivity is 2 × 10 −4 S cm −1 . Two composite cathodes including active material (LiFePO 4 or LiNi 0.82 Mn 0.07 Co 0.11 O 2 ) and 1 to 1.5 wt% MSB1–13 are tape cast as proof-of-concept for a scalable cell fabrication approach. A LiFePO 4 cell shows good retention at 25 °C. The performance of NMC cells with tape electrolyte or pellet electrolyte is similar. This study demonstrates the feasibility of tape casting halide-based electrolytes and cathodes.

25 ENERGY STORAGE↗
DOE OSTI2023

Understanding the origin of Tabula Rasa-induced defects in n-type Cz c-Si: The case of nitrogen atmosphere

Phosphorus-doped Czochralski-grown silicon (Cz-Si) has been gaining market share in the large-scale manufacturing of high-efficiency silicon (Si)-based photovoltaic (PV) devices thanks to higher carrier lifetimes than their boron-doped counterpart. However, the fabrication of n-type Cz-Si based solar cells often requires process steps with much higher temperatures and longer times than p-type Silicon. Defect interaction with the high temperatures during such processes tend to be detrimental to the n-type Cz-Si carrier lifetime, therefore limiting the final device efficiency. Short thermal anneals before cell processing, known as Tabula Rasa (TR), have been proposed to mitigate the thermally induced lifetime degradation during n-type Cz-Si solar cell fabrication. This work thoroughly investigates the defects responsible for the lifetime degradation after TR in a N 2 atmosphere treatment. We use temperature-injection-dependent lifetime spectroscopy and the thickness variation method to decouple the effects of TR treatment in the bulk and the surface of the n-type Cz-Si wafers. Using the defect parameter contour mapping (DPCM), we identify the defect energy level (E t ) and the capture cross-section ratio (k) of the most likely process-induced defect, which aligns with previously proposed Si vacancy-associated defects. The DPCM reveals that these vacancy-associated defects have a shallow energy level E t - E v ~0.13 eV and very efficient electron capture cross section k~600. Unexpectedly, the bulk degradation due to vacancy defects in the volume of the wafer, is accompanied by a significant increase in the surface recombination as well. Through evaluating the surface recombination velocity temperature- and injection dependence, we show that after TR, at room temperature and for an injection level of 10 15 cm -3 , in a wafer passivated with a-Si:H(i) the surface recombination dominates the overall lifetime response. Here we hypothesize that the near surface vacancy-associated bulk defects play a role in lowering the electron diffusion current into the a-Si:H(i) from the c-Si(n) reducing the field-effect passivation.

14 SOLAR ENERGY↗
DOE OSTI2022

Temperature and illumination dependence of silicon heterojunction solar cells with a wide range of wafer resistivities

Abstract Recently, the significant improvements in the surface and contact passivation of silicon (Si) solar cells as well as their bulk quality have shifted their operating point to higher injections. Hence, they are less dependent on wafer doping. This shift opens an opportunity of using high‐resistivity wafers for practical photovoltaic applications, introducing a promising approach to push the cell efficiency towards the intrinsic limit and to improve the module reliability by increasing the cell breakdown voltage. Therefore, insights into the performance of Si solar cells using high‐resistivity wafers at various operating temperatures are of significant interest. In this study, we investigate the temperature‐ and illumination‐dependent performance of Si heterojunction (SHJ) solar cells using a wide range of wafer resistivities (between 3 and 1000 Ω⋅cm). Although a reduction in the passivation quality of the passivating contacts is observed at elevated temperature, the impact on the temperature coefficient of the open‐circuit voltage (TC V oc )—the dominant contributor to the temperature coefficient (TC) of the cell efficiency—is very limited. Their TC V oc are still dominated by the temperature dependence of the effective intrinsic carrier concentration. Furthermore, we also find that the investigated cells are more sensitive to temperature variation at lower illumination intensities. It is noteworthy that the efficiency of the cells fabricated using high‐resistivity wafers is comparable to that of the reference cells at any given temperature, highlighting the potential of using high‐resistivity wafers for solar cells.

14 SOLAR ENERGY↗
DOE OSTI2022

Understanding the Electrochemical Performance of FeS 2 Conversion Cathodes

Conversion cathodes represent a viable route to improve rechargeable Li + battery energy densities, but their poor electrochemical stability and power density have impeded their practical implementation. Here, we explore the impact cell fabrication, electrolyte interaction, and current density have on the electrochemical performance of FeS 2 /Li cells by deconvoluting the contributions of the various conversion and intercalation reactions to the overall capacity. By varying the slurry composition and applied pressure, we determine that the capacity loss is primarily due to the large volume changes during (de)lithiation, leading to a degradation of the conductive matrix. Through the application of an external pressure, the loss is minimized by maintaining the conductive matrix. Further, we determine that polysulfide loss can be minimized by increasing the current density (>C/10), thus reducing the sulfur formation period. Analysis of the kinetics determines that the conversion reactions are rate-limiting, specifically the formation of metallic iron at rates above C/8. While focused on FeS 2 , our findings on the influence of pressure, electrolyte interaction, and kinetics are broadly applicable to other conversion cathode systems.

Pressure↗
DOE OSTI2025

Decoupling the capacity fade contributions in polymer electrolyte-based high-voltage solid-state batteries

Polymer electrolyte (PE)-based solid-state batteries (PE-SSBs) made with high-voltage cathodes are known to suffer from severe capacity fade, stemming primarily from the poor oxidative stability of most PEs under high-voltage cycling conditions. PEs also suffer from greater ion-transport limitations compared to liquid or solid electrolytes. However, often, these limitations are collectively stated to be responsible for the observed capacity fade, and it is challenging to decouple the contributions of different factors. Herein, a tunable cell fabrication platform was developed to systematically investigate and decouple the two primary capacity fade drivers (cell impedance growth and kinetic limitations), while keeping the other cell parameters constant. Three PE types with distinct transport characteristics were compared. By utilizing a voltage profile analysis method, the contribution of the cell's internal impedance growth was quantitatively decoupled from the kinetic limitations stemming from the high concentration gradient in the polymer catholyte and slow charge transfer reactions. We demonstrate that the high interfacial impedance did not necessarily correlate with the high capacity fade rate. Kinetic limitations that are not reflected by impedance measurements can play a dominant role in causing cumulative capacity decay.

Ock, Ji-young [Oak Ridge National Laboratory (ORNL↗
DOE OSTI2025

Flexible transparent conducting electrodes unexpectedly influence MAPbI 3 film morphology and perovskite solar cell performance

Fabricating perovskite solar cells (PSCs) on plastic substrates will enable cost-effective manufacturing of lightweight and portable energy systems. Here, we study the influence of flexible transparent conductive electrodes (TCEs) on the methylammonium lead iodide (MAPbI3) film morphology and PSC performance. Three types of TCEs on polyethylene terephthalate (PET) are compared: a custom-made AgNWs/indium zinc oxide hybrid TCE and two commercial substrates with indium tin oxide (ITO) or metal/insulator/metal (MIM) as the TCE. Using the same p-i-n architecture and hole transport layer (HTL), we find that PSCs fabricated on the hybrid TCE show better performance and stability compared to those made on commercial TCEs. The PSC performance enhancement is attributed to the superior structural and optical properties of MAPbI3 film deposited on the hybrid TCE, which is explained by the surface energy difference of the HTL. While it is anticipated that solar cell performance can be affected by TCEs’ transmittance and sheet resistance as they determine light absorption and carrier transport, respectively, our finding of TCE influencing the morphology and crystallinity of MAPbI3 film, and hence PSC performance, is unexpected.

14 SOLAR ENERGY↗
DOE OSTI2023

Improved reproducibility of metal halide perovskite solar cells via automated gas quenching

Achieving reproducible perovskite solar cell fabrication is crucial for making it a scalable technology. We demonstrate an automated gas quenching system to improve perovskite solar cell reproducibility at the lab-scale. We use in situ photoluminescence to monitor the perovskite film formation as a function of the atmosphere in the glove box and find that antisolvent quenching is more sensitive to lingering precursor solvents than the gas quenching method. We observe a better reproducibility with gas quenching than with antisolvent quenching because it maintains a more consistent atmosphere in the glove box. The automated gas quenching process leads to high performing devices that are reproducible both batch to batch and researcher to researcher. The insights into gas quenching film formation as a function of solvent atmosphere and quench velocity will help inform future studies on large scale fabrication systems.

14 SOLAR ENERGY↗
DOE OSTI2022

Property Measurements of the NaCl-PuCl 3 Molten Salt System

Thermal properties of several compositions of the binary NaCl-PuCl 3 salt were measured to confirm the eutectic composition and provide high quality data for use by MSR developers. The PuCl 3 was generated by reducing PuO 2 to plutonium metal in the presence of calcium metal and then chlorinating the metallic plutonium with NH 4 Cl. The resulting PuCl 3 was used to make seven binary NaCl-PuCl 3 compositions with between 59.9 mol % PuCl 3 (Salt 1) and 20.0 mol % PuCl 3 (Salt 7). The eutectic temperature was measured to be 457 ± 4 °C by onset determination in DSC analyses of the seven mixtures, which is consistent with the values in the literature. Additional transitions were observed at approximately 332 and 363 °C in analyses of the PuCl 3 -rich compositions (Salts 1-3) at about 376 and 439 °C in analyses the Na-rich compositions (Salts 4-7). The solid state heat capacity decreased with increasing PuCl 3 content. The liquid state heat capacity was measured for Salt 3 (37.4 mol % PuCl 3 ) and Salt 4 (38.3 mol % PuCl 3 ). A higher heat capacity was measured for Salt 4 and measurements with both salts showed a positive correlation with temperature between 520 and 730 °C. Cells fabricated from nickel and molybdenum for use in DSC measurements at high temperatures could not be adequately sealed because these materials are not sufficiently malleable, even after high temperature annealing. It is recommended that future development focus on corrosion-resistant materials that have mechanical and thermal properties similar to the commercially available gold cells, such as Pt-Rh (80–20) and pure platinum. Those materials are chemically inert, soft, and malleable like gold, but have melting temperatures higher than 1000 °C (Rakhtsaum, 2013). Use of the Pt-Rh alloy should be evaluated first based on superior machinability for making precision parts and its current use in commercial DSC high temperature crucibles. The commercial Pt-Rh cells are not hermetically sealable, but it is expected that cells made from thinner stock can be sealed.

21 SPECIFIC NUCLEAR REACTORS AND ASSOCIATED PLANTS↗
DOE OSTI2022

Ion-Assisted Ligand Exchange for Efficient and Stable Inverted FAPbI 3 Quantum Dot Solar Cells

Perovskite quantum dot (QD) has emerged as a promising material for photovoltaics with its superior stability compared to their three-dimensional bulk counterparts, owing to its thermodynamically stabilized photoactive phase. However, ligand management on perovskite QD surfaces is extremely difficult due to the ionic nature of the perovskite lattice, which often leads to either incomplete removal of the native insulating ligands or formation of trap states during the ligand-exchange process, greatly hampering the photovoltaic performances. In this work, we report an ion-assisted ligand-exchange method for FAPbI 3 QDs using AOAc (A = formamidinium (FA + ), guanidinium (GA + ), and phenethylammonium (PEA + ), OAc = acetate), with the A + and OAC - ions promoting the removal of native long-chain insulating ligands. Further, the more complete ligand exchange results in dense and well-oriented packing of QDs, together with the enhancement of electronic coupling and charge transport across QDs. In addition, the A + and OAC - ions can fill the surface A-/X-site vacancies, respectively, reducing the QD surface trap state density and hence suppressing charge recombination and iodide migration. The p-i-n inverted QD solar cells fabricated with this ligand-exchange method exhibit significant enhancement in shortcircuit current density (J SC ), reaching a PCE of 10.13%. Moreover, unencapsulated devices show impressive stabilities of more than 7300 h (10 months) storage time in a N 2 -filled glovebox.

36 MATERIALS SCIENCE↗