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DOE OSTI2020

Materials Data on Cd(InSe2)2 by Materials Project

CdIn2Se4 crystallizes in the tetragonal I-4 space group. The structure is three-dimensional. Cd2+ is bonded to four equivalent Se2- atoms to form CdSe4 tetrahedra that share corners with eight InSe4 tetrahedra. All Cd–Se bond lengths are 2.70 Å. There are two inequivalent In3+ sites. In the first In3+ site, In3+ is bonded to four equivalent Se2- atoms to form InSe4 tetrahedra that share corners with four equivalent CdSe4 tetrahedra and corners with four equivalent InSe4 tetrahedra. All In–Se bond lengths are 2.64 Å. In the second In3+ site, In3+ is bonded to four equivalent Se2- atoms to form InSe4 tetrahedra that share corners with four equivalent CdSe4 tetrahedra and corners with four equivalent InSe4 tetrahedra. All In–Se bond lengths are 2.64 Å. Se2- is bonded in a trigonal non-coplanar geometry to one Cd2+ and two In3+ atoms.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Materials Data on Cd(InSe2)2 by Materials Project

CdIn2Se4 is Spinel structured and crystallizes in the cubic Fd-3m space group. The structure is three-dimensional. Cd2+ is bonded to four equivalent Se2- atoms to form CdSe4 tetrahedra that share corners with twelve equivalent InSe6 octahedra. The corner-sharing octahedral tilt angles are 58°. All Cd–Se bond lengths are 2.70 Å. In3+ is bonded to six equivalent Se2- atoms to form InSe6 octahedra that share corners with six equivalent CdSe4 tetrahedra and edges with six equivalent InSe6 octahedra. All In–Se bond lengths are 2.79 Å. Se2- is bonded to one Cd2+ and three equivalent In3+ atoms to form a mixture of distorted edge and corner-sharing SeCdIn3 trigonal pyramids.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Materials Data on Cd(InSe2)2 by Materials Project

CdIn2Se4 crystallizes in the tetragonal I-4m2 space group. The structure is three-dimensional. Cd2+ is bonded to six Se2- atoms to form CdSe6 octahedra that share corners with two equivalent InSe6 octahedra, corners with four equivalent CdSe6 octahedra, and edges with eight InSe6 octahedra. The corner-sharing octahedra tilt angles range from 0–5°. All Cd–Se bond lengths are 2.88 Å. There are two inequivalent In3+ sites. In the first In3+ site, In3+ is bonded to six Se2- atoms to form InSe6 octahedra that share corners with two equivalent CdSe6 octahedra, corners with four equivalent InSe6 octahedra, edges with four equivalent CdSe6 octahedra, and edges with four equivalent InSe6 octahedra. The corner-sharing octahedra tilt angles range from 0–5°. There are two shorter (2.68 Å) and four longer (2.88 Å) In–Se bond lengths. In the second In3+ site, In3+ is bonded to six Se2- atoms to form InSe6 octahedra that share corners with four equivalent InSe6 octahedra, edges with four equivalent CdSe6 octahedra, and edges with four equivalent InSe6 octahedra. The corner-sharing octahedral tilt angles are 4°. There are two shorter (2.66 Å) and four longer (2.88 Å) In–Se bond lengths. There are three inequivalent Se2- sites. In the first Se2- site, Se2- is bonded to two equivalent Cd2+ and three In3+ atoms to form a mixture of edge and corner-sharing SeCd2In3 square pyramids. In the second Se2- site, Se2- is bonded in a square co-planar geometry to one Cd2+ and three In3+ atoms. The Se–Cd bond length is 2.88 Å. In the third Se2- site, Se2- is bonded in a square co-planar geometry to one Cd2+ and three In3+ atoms.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Materials Data on Cd(InSe2)2 by Materials Project

CdIn2Se4 crystallizes in the tetragonal I-42m space group. The structure is three-dimensional. Cd2+ is bonded to four equivalent Se2- atoms to form CdSe4 tetrahedra that share corners with eight equivalent InSe4 tetrahedra. All Cd–Se bond lengths are 2.70 Å. In3+ is bonded to four equivalent Se2- atoms to form InSe4 tetrahedra that share corners with four equivalent CdSe4 tetrahedra and corners with four equivalent InSe4 tetrahedra. All In–Se bond lengths are 2.64 Å. Se2- is bonded in a trigonal non-coplanar geometry to one Cd2+ and two equivalent In3+ atoms.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Materials Data on Cd(InSe2)2 by Materials Project

CdIn2Se4 crystallizes in the tetragonal P-42m space group. The structure is three-dimensional. Cd2+ is bonded to four equivalent Se2- atoms to form CdSe4 tetrahedra that share corners with eight equivalent InSe4 tetrahedra. All Cd–Se bond lengths are 2.69 Å. In3+ is bonded to four equivalent Se2- atoms to form InSe4 tetrahedra that share corners with four equivalent CdSe4 tetrahedra and corners with four equivalent InSe4 tetrahedra. All In–Se bond lengths are 2.65 Å. Se2- is bonded in a trigonal non-coplanar geometry to one Cd2+ and two equivalent In3+ atoms.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Materials Data on Cd9(InSe2)20 by Materials Project

Cd9(InSe2)20 crystallizes in the triclinic P1 space group. The structure is three-dimensional. there are nine inequivalent Cd2+ sites. In the first Cd2+ site, Cd2+ is bonded to five Se+1.85- atoms to form distorted CdSe5 trigonal bipyramids that share corners with two CdSe5 trigonal bipyramids, corners with three InSe5 trigonal bipyramids, and edges with four InSe5 trigonal bipyramids. There are a spread of Cd–Se bond distances ranging from 2.64–3.17 Å. In the second Cd2+ site, Cd2+ is bonded to five Se+1.85- atoms to form distorted CdSe5 trigonal bipyramids that share corners with two CdSe5 trigonal bipyramids, corners with four InSe5 trigonal bipyramids, and edges with four InSe5 trigonal bipyramids. There are a spread of Cd–Se bond distances ranging from 2.63–3.28 Å. In the third Cd2+ site, Cd2+ is bonded to five Se+1.85- atoms to form distorted CdSe5 trigonal bipyramids that share corners with two CdSe5 trigonal bipyramids, corners with three InSe5 trigonal bipyramids, and edges with four InSe5 trigonal bipyramids. There are a spread of Cd–Se bond distances ranging from 2.64–3.17 Å. In the fourth Cd2+ site, Cd2+ is bonded to five Se+1.85- atoms to form CdSe5 trigonal bipyramids that share a cornercorner with one CdSe5 trigonal bipyramid, corners with two InSe5 trigonal bipyramids, and edges with four InSe5 trigonal bipyramids. There are a spread of Cd–Se bond distances ranging from 2.74–2.87 Å. In the fifth Cd2+ site, Cd2+ is bonded in a 5-coordinate geometry to five Se+1.85- atoms. There are a spread of Cd–Se bond distances ranging from 2.63–3.35 Å. In the sixth Cd2+ site, Cd2+ is bonded to five Se+1.85- atoms to form CdSe5 trigonal bipyramids that share corners with two CdSe5 trigonal bipyramids, corners with four InSe5 trigonal bipyramids, and edges with three InSe5 trigonal bipyramids. There are a spread of Cd–Se bond distances ranging from 2.71–2.88 Å. In the seventh Cd2+ site, Cd2+ is bonded to five Se+1.85- atoms to form CdSe5 trigonal bipyramids that share a cornercorner with one CdSe5 trigonal bipyramid, corners with four InSe5 trigonal bipyramids, and edges with four InSe5 trigonal bipyramids. There are a spread of Cd–Se bond distances ranging from 2.73–2.87 Å. In the eighth Cd2+ site, Cd2+ is bonded to five Se+1.85- atoms to form CdSe5 trigonal bipyramids that share a cornercorner with one CdSe5 trigonal bipyramid, corners with four InSe5 trigonal bipyramids, and edges with three InSe5 trigonal bipyramids. There are a spread of Cd–Se bond distances ranging from 2.69–2.89 Å. In the ninth Cd2+ site, Cd2+ is bonded to five Se+1.85- atoms to form CdSe5 trigonal bipyramids that share a cornercorner with one CdSe5 trigonal bipyramid, corners with four InSe5 trigonal bipyramids, and edges with four InSe5 trigonal bipyramids. There are a spread of Cd–Se bond distances ranging from 2.72–2.88 Å. There are twenty inequivalent In+2.80+ sites. In the first In+2.80+ site, In+2.80+ is bonded in a 5-coordinate geometry to five Se+1.85- atoms. There are a spread of In–Se bond distances ranging from 2.66–3.30 Å. In the second In+2.80+ site, In+2.80+ is bonded to five Se+1.85- atoms to form distorted InSe5 trigonal bipyramids that share corners with two CdSe5 trigonal bipyramids, corners with eight InSe5 trigonal bipyramids, and edges with two CdSe5 trigonal bipyramids. There are a spread of In–Se bond distances ranging from 2.64–3.06 Å. In the third In+2.80+ site, In+2.80+ is bonded to five Se+1.85- atoms to form distorted InSe5 trigonal bipyramids that share corners with two CdSe5 trigonal bipyramids, corners with seven InSe5 trigonal bipyramids, and edges with two CdSe5 trigonal bipyramids. There are a spread of In–Se bond distances ranging from 2.65–3.13 Å. In the fourth In+2.80+ site, In+2.80+ is bonded to five Se+1.85- atoms to form distorted InSe5 trigonal bipyramids that share corners with two CdSe5 trigonal bipyramids, corners with seven InSe5 trigonal bipyramids, and edges with two CdSe5 trigonal bipyramids. There are a spread of In–Se bond distances ranging from 2.65–3.05 Å. In the fifth In+2.80+ site, In+2.80+ is bonded to five Se+1.85- atoms to form distorted InSe5 trigonal bipyramids that share corners with two CdSe5 trigonal bipyramids, corners with seven InSe5 trigonal bipyramids, and edges with two CdSe5 trigonal bipyramids. There are a spread of In–Se bond distances ranging from 2.67–3.09 Å. In the sixth In+2.80+ site, In+2.80+ is bonded to five Se+1.85- atoms to form distorted InSe5 trigonal bipyramids that share a cornercorner with one CdSe5 trigonal bipyramid, corners with seven InSe5 trigonal bipyramids, and edges with two CdSe5 trigonal bipyramids. There are a spread of In–Se bond distances ranging from 2.65–3.06 Å. In the seventh In+2.80+ site, In+2.80+ is bonded to five Se+1.85- atoms to form distorted InSe5 trigonal bipyramids that share corners with two CdSe5 trigonal bipyramids, corners with eight InSe5 trigonal bipyramids, and edges with two CdSe5 trigonal bipyramids. There are a spread of In–Se bond distances ranging from 2.66–3.04 Å. In the eighth In+2.80+ site, In+2.80+ is bonded to five Se+1.85- atoms to form distorted InSe5 trigonal bipyramids that share a cornercorner with one CdSe5 trigonal bipyramid, corners with seven InSe5 trigonal bipyramids, and edges with two CdSe5 trigonal bipyramids. There are a spread of In–Se bond distances ranging from 2.65–3.06 Å. In the ninth In+2.80+ site, In+2.80+ is bonded to five Se+1.85- atoms to form distorted InSe5 trigonal bipyramids that share corners with two CdSe5 trigonal bipyramids, corners with eight InSe5 trigonal bipyramids, and an edgeedge with one CdSe5 trigonal bipyramid. There are a spread of In–Se bond distances ranging from 2.66–3.02 Å. In the tenth In+2.80+ site, In+2.80+ is bonded to five Se+1.85- atoms to form distorted InSe5 trigonal bipyramids that share a cornercorner with one CdSe5 trigonal bipyramid, corners with seven InSe5 trigonal bipyramids, and edges with two CdSe5 trigonal bipyramids. There are a spread of In–Se bond distances ranging from 2.62–3.11 Å. In the eleventh In+2.80+ site, In+2.80+ is bonded to five Se+1.85- atoms to form distorted InSe5 trigonal bipyramids that share a cornercorner with one CdSe5 trigonal bipyramid, corners with seven InSe5 trigonal bipyramids, and edges with two CdSe5 trigonal bipyramids. There are a spread of In–Se bond distances ranging from 2.66–3.07 Å. In the twelfth In+2.80+ site, In+2.80+ is bonded to five Se+1.85- atoms to form distorted InSe5 trigonal bipyramids that share a cornercorner with one CdSe5 trigonal bipyramid, corners with seven InSe5 trigonal bipyramids, and an edgeedge with one CdSe5 trigonal bipyramid. There are a spread of In–Se bond distances ranging from 2.63–3.03 Å. In the thirteenth In+2.80+ site, In+2.80+ is bonded to five Se+1.85- atoms to form distorted InSe5 trigonal bipyramids that share a cornercorner with one CdSe5 trigonal bipyramid, corners with seven InSe5 trigonal bipyramids, and an edgeedge with one CdSe5 trigonal bipyramid. There are a spread of In–Se bond distances ranging from 2.65–2.99 Å. In the fourteenth In+2.80+ site, In+2.80+ is bonded to five Se+1.85- atoms to form distorted InSe5 trigonal bipyramids that share corners with two CdSe5 trigonal bipyramids, corners with seven InSe5 trigonal bipyramids, and edges with two CdSe5 trigonal bipyramids. There are a spread of In–Se bond distances ranging from 2.65–3.02 Å. In the fifteenth In+2.80+ site, In+2.80+ is bonded to five Se+1.85- atoms to form distorted InSe5 trigonal bipyramids that share a cornercorner with one CdSe5 trigonal bipyramid, corners with seven InSe5 trigonal bipyramids, and edges with two CdSe5 trigonal bipyramids. There are a spread of In–Se bond distances ranging from 2.66–3.00 Å. In the sixteenth In+2.80+ site, In+2.80+ is bonded to five Se+1.85- atoms to form distorted InSe5 trigonal bipyramids that share a cornercorner with one CdSe5 trigonal bipyramid, corners with seven InSe5 trigonal bipyramids, and edges with two CdSe5 trigonal bipyramids. There are a spread of In–Se bond distances ranging from 2.66–3.01 Å. In the seventeenth In+2.80+ site, In+2.80+ is bonded to five Se+1.85- atoms to form distorted InSe5 trigonal bipyramids that share corners with two CdSe5 trigonal bipyramids, corners with eight InSe5 trigonal bipyramids, and an edgeedge with one CdSe5 trigonal bipyramid. There are a spread of In–Se bond distances ranging from 2.65–3.09 Å. In the eighteenth In+2.80+ site, In+2.80+ is bonded to five Se+1.85- atoms to form distorted InSe5 trigonal bipyramids that share corners with two CdSe5 trigonal bipyramids, corners with eight InSe5 trigonal bipyramids, and an edgeedge with one CdSe5 trigonal bipyramid. There are a spread of In–Se bond distances ranging from 2.66–3.09 Å. In the nineteenth In+2.80+ site, In+2.80+ is bonded in a 5-coordinate geometry to five Se+1.85- atoms. There are a spread of In–Se bond distances ranging from 2.66–3.28 Å. In the twentieth In+2.80+ site, In+2.80+ is bonded to five Se+1.85- atoms to form distorted InSe5 trigonal bipyramids that share corners with two CdSe5 trigonal bipyramids, corners with six InSe5 trigonal bipyramids, and an edgeedge with one CdSe5 trigonal bipyramid. There are a spread of In–Se bond distances ranging from 2.65–3.02 Å. There are forty inequivalent Se+1.85- sites. In the first Se+1.85- site, Se+1.85- is bonded to one Cd2+ and three In+2.80+ atoms to form distorted SeCdIn3 trigonal pyramids that share a cornercorner with one SeCd2In2 tetrahedra and corners with four SeCdIn3 trigonal pyramids. In the second Se+1.85- site, Se+1.85- is bonded in a 4-coordinate geometry to one Cd2+ and three In+2.80+ atoms. In the third Se+1.85- site, Se+1.85- is bonded in a distorted trigonal non-coplanar geometry to one Cd2+ and two In+2.80+ atoms. In the fourth Se+1.85- site, Se+1.85- is bonded in a 3-coordinate geometry to three In+2.80+ atoms. In the fifth Se+1.85- site, Se+1.85- is bonded in a distorted trigonal non-coplanar geometry to one Cd2+ and two In+2.80+ atoms. In the sixth Se+1.85- site, Se+1.85- is bonded in a 4-coordinate geometry to one Cd2+ and three In+2.80+ atoms. In the seventh Se+1.85- site, Se+1.85- is bonded to one Cd2+ and three In+2.80+ atoms to form distorted SeCdIn3 trigonal pyramids that share a cornercorner with one SeCd2In2 tetrahedra, corners with six SeCdIn3 trigonal pyramids, and an edgeedge with one SeCd2In2 tetrahedra. In the eighth Se+1.85- site, Se+1.85- is bonded in a 4-coordinate geometry to two Cd2+ and two In+2.80+ atoms. In the ninth Se+1.85- site, Se+1.85- is bonded to one Cd2+ and three In+2.80+ atoms to form distorted SeCdIn3 trigonal pyramids that share corners with two SeCd2In2 tetrahedra and corners with six SeCdIn3 trigonal pyramids. In the tenth Se+1.85- site, Se+1.85- is bonded to two Cd2+ and two In+2.80+ atoms to form a mixture of edge and corner-sharing SeCd2In2 tetrahedra. In the eleventh Se+1.85- site, Se+1.85- is bonded to one Cd2+ and three In+2.80+ atoms to form distorted SeCdIn3 trigonal pyramids that share a cornercorner with one SeCd2In2 tetrahedra, corners with six SeCdIn3 trigonal pyramids, and an edgeedge with one SeCd2In2 tetrahedra. In the twelfth Se+1.85- site, Se+1.85- is bonded in a distorted trigonal non-coplanar geometry to one Cd2+ and two In+2.80+ atoms. In the thirteenth Se+1.85- site, Se+1.85- is bonded to one Cd2+ and three In+2.80+ atoms to form distorted SeCdIn3 trigonal pyramids that share corners with two SeCd2In2 tetrahedra and corners with six SeCdIn3 trigonal pyramids. In the fourteenth Se+1.85- site, Se+1.85- is bonded in a distorted T-shaped geometry to one Cd2+ and two In+2.80+ atoms. In the fifteenth Se+1.85- site, Se+1.85- is bonded to one Cd2+ and three In+2.80+ atoms to form distorted SeCdIn3 trigonal pyramids that share a cornercorner with one SeCd2In2 tetrahedra, corners with seven SeCdIn3 trigonal pyramids, and an edgeedge with one SeCd2In2 tetrahedra. In the sixteenth Se+1.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Materials Data on Cd3(InSe3)2 by Materials Project

Cd3(InSe3)2 crystallizes in the trigonal R3 space group. The structure is three-dimensional. Cd2+ is bonded to four Se2- atoms to form CdSe4 tetrahedra that share corners with four InSe4 tetrahedra and corners with six equivalent CdSe4 tetrahedra. There are a spread of Cd–Se bond distances ranging from 2.60–2.74 Å. There are two inequivalent In3+ sites. In the first In3+ site, In3+ is bonded to four Se2- atoms to form InSe4 tetrahedra that share corners with three equivalent InSe4 tetrahedra and corners with six equivalent CdSe4 tetrahedra. There are three shorter (2.65 Å) and one longer (2.66 Å) In–Se bond lengths. In the second In3+ site, In3+ is bonded to four Se2- atoms to form InSe4 tetrahedra that share corners with three equivalent InSe4 tetrahedra and corners with six equivalent CdSe4 tetrahedra. There are three shorter (2.64 Å) and one longer (2.66 Å) In–Se bond lengths. There are four inequivalent Se2- sites. In the first Se2- site, Se2- is bonded in a trigonal non-coplanar geometry to one Cd2+ and two In3+ atoms. In the second Se2- site, Se2- is bonded to three equivalent Cd2+ and one In3+ atom to form corner-sharing SeCd3In tetrahedra. In the third Se2- site, Se2- is bonded in a distorted trigonal non-coplanar geometry to three equivalent Cd2+ atoms. In the fourth Se2- site, Se2- is bonded to three equivalent Cd2+ and one In3+ atom to form corner-sharing SeCd3In tetrahedra.

36 MATERIALS SCIENCE↗