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At least 19 records

Hot Carrier Dynamics in the X Valley in Si and Ge Measured by Pump-IR-Probe Absorption Spectroscopy

Si is the semiconductor of choice for nanoelectronic roadmap into the next century for computer and other nanodevices. With growing interest in Si, Ge, and Si(sub m)Ge(sub n) strained superlattices, knowledge of the carrier relaxation processes in these materials and structures has become increasingly important. The limited time resolution for earlier studies of carrier dynamics in Ge and Si, performed using Nd:glass lasers, was not sufficient to observe the fast cooling processes. In this paper, we present a direct measurement of hot carrier dynamics in the satellite X valley in Si and Ge by time-resolved infrared(IR) absorption spectroscopy, and show the potential of our technique to identify whether the X valley is the lowest conduction valley in semiconductor materials and structures.

Wang, W. B.

Effects of proton irradiation on luminescence and carrier dynamics of self-assembled III-V quatum dots

The effects of proton irradiation (1.5 MeV) on photoluminescence intensities and carrier dynamics were compared between III-V quantum dots and similar quantum well structures. A significant enhancement in radiation tolerance is seen with three-dimensional quantum confinement. Measurements were carried out in different quantum dot (QD) structures, varying in material (InGaAs/GaAs and InAlAs/AlGaAs), QD surface density (4x10^8 to 3x10'^10 cm^-2), and substrate orientation [(100) and (311) B]. Similar trends were observed for all QD samples. A slight increase in PL emission after low to intermediate proton doses, are also observed in InGaAs/GaAs (100) QD structures. The latter is explained in terms of more efficient carrier transfer from the wetting layer via radiation-induced defects.

nanotechnology DLTS optical properties pn diodes q

Carrier Dynamics in Quantum Dot Structures with Different Interdot Spacings

The time of carrier transfer into a dot decreases with increasing dot density as well as with photoexcited carrier denstiy and temperature. It is suggested that potential barriers at the barrier, wetting layer and quantum dot interfaces hinder the carrier capture in low-density quantum dot structures.

quantum

Gunn domain dynamics.

Carrier motion equation in Gunn diode in terms of average drift velocity and diffusion coefficient

DIFFUSION COEFFICIENT

Investigation of the basic physics of high efficiency semiconductor hot carrier solar cell

The main purpose of this research program is to investigate potential semiconductor materials and their multi-band-gap MQW (multiple quantum wells) structures for high efficiency solar cells for aerospace and commercial applications. The absorption and PL (photoluminescence) spectra, the carrier dynamics, and band structures have been investigated for semiconductors of InP, GaP, GaInP, and InGaAsP/InP MQW structures, and for semiconductors of GaAs and AlGaAs by previous measurements. The barrier potential design criteria for achieving maximum energy conversion efficiency, and the resonant tunneling time as a function of barrier width in high efficiency MQW solar cell structures have also been investigated in the first two years. Based on previous carrier dynamics measurements and the time-dependent short circuit current density calculations, an InAs/InGaAs - InGaAs/GaAs - GaAs/AlGaAs MQW solar cell structure with 15 bandgaps has been designed. The absorption and PL spectra in InGaAsP/InP bulk and MQW structures were measured at room temperature and 77 K with different pump wavelength and intensity, to search for resonant states that may affect the solar cell activities. Time-resolved IR absorption for InGaAsP/InP bulk and MQW structures has been measured by femtosecond visible-pump and IR-probe absorption spectroscopy. This, with the absorption and PL measurements, will be helpful to understand the basic physics and device performance in multi-bandgap InAs/InGaAs - InGaAs/InP - InP/InGaP MQW solar cells. In particular, the lifetime of the photoexcited hot electrons is an important parameter for the device operation of InGaAsP/InP MQW solar cells working in the resonant tunneling conditions. Lastly, time evolution of the hot electron relaxation in GaAs has been measured in the temperature range of 4 K through 288 K using femtosecond pump-IR-probe absorption technique. The temperature dependence of the hot electron relaxation time in the X valley has been measured.

Alfano, R. R.

Novel Materials, Processing and Device Technologies for Space Exploration with Potential Dual-Use Applications

We highlight results of a broad spectrum of efforts on lower-temperature processing of nanomaterials, novel approaches to energy conversion, and environmentally rugged devices. Solution-processed quantum dots of copper indium chalcogenide semiconductors and multiwalled carbon nanotubes from lower-temperature spray pyrolysis are enabled by novel (precursor) chemistry. Metal-doped zinc oxide (ZnO) nanostructured components of photovoltaic cells have been grown in solution at low temperature on a conductive indium tin oxide substrate. Arrays of ZnO nanorods can be templated and decorated with various semiconductor and metallic nanoparticles. Utilizing ZnO in a more broadly defined energy conversion sense as photocatalysts, unwanted organic waste materials can potentially be repurposed. Current efforts on charge carrier dynamics in nanoscale electrode architectures used in photoelectrochemical cells for generating solar electricity and fuels are described. The objective is to develop oxide nanowire-based electrode architectures that exhibit improved charge separation, charge collection and allow for efficient light absorption. Investigation of the charge carrier transport and recombination properties of the electrodes will aid in the understanding of how nanowire architectures improve performance of electrodes for dye-sensitized solar cells. Nanomaterials can be incorporated in a number of advanced higher-performance (i.e. mass specific power) photovoltaic arrays. Advanced technologies for the deposition of 4H-silicon carbide are described. The use of novel precursors, advanced processing, and process studies, including modeling are discussed from the perspective of enhancing the performance of this promising material for enabling technologies such as solar electric propulsion. Potential impact(s) of these technologies for a variety of aerospace applications are highlighted throughout. Finally, examples are given of technologies with potential spin-offs for dual-use or terrestrial applications.

solid state devices

Novel Materials, Processing, and Device Technologies for Space Exploration with Potential Dual-Use Applications

We highlight results of a broad spectrum of efforts on lower-temperature processing of nanomaterials, novel approaches to energy conversion, and environmentally rugged devices. Solution-processed quantum dots of copper indium chalcogenide semiconductors and multi-walled carbon nanotubes from lower-temperature spray pyrolysis are enabled by novel (precursor) chemistry. Metal-doped zinc oxide (ZnO) nanostructured components of photovoltaic cells have been grown in solution at low temperature on a conductive indium tin oxide substrate. Arrays of ZnO nanorods can be templated and decorated with various semiconductor and metallic nanoparticles. Utilizing ZnO in a more broadly defined energy conversion sense as photocatalysts, unwanted organic waste materials can potentially be re-purposed. Current efforts on charge carrier dynamics in nanoscale electrode architectures used in photoelectrochemical cells for generating solar electricity and fuels are described. The objective is to develop oxide nanowire-based electrode architectures that exhibit improved charge separation, charge collection and allow for efficient light absorption. Investigation of the charge carrier transport and recombination properties of the electrodes will aid in the understanding of how nanowire architectures improve performance of electrodes for dye-sensitized solar cells. Nanomaterials can be incorporated in a number of advanced higher-performance (i.e. mass specific power) photovoltaic arrays. Advanced technologies for the deposition of 4H-silicon carbide are described. The use of novel precursors, advanced processing, and process studies, including modeling are discussed from the perspective of enhancing the performance of this promising material for enabling technologies such as solar electric propulsion. Potential impact(s) of these technologies for a variety of aerospace applications are highlighted throughout. Finally, examples are given of technologies with potential spin-offs for dual-use or terrestrial applications.

thin films

Time resolved studies of proton irradiated quantum dots

The effects of proton irradiation on carrier dynamics were measured by time-resolved photoluminescence on InGaAs/GaAs quantum dot structures with different dot density and substrate orientation, as well as on InAlAs/AlGaAs quantum dots.

nanotechnology

Static and Dynamic Effects of Lateral Carrier Diffusion in Semiconductor Lasers

Electron and hole diffusions in the plane of semiconductor quantum wells play an important part in the static and dynamic operations of semiconductor lasers. It is well known that the value of diffusion coefficients affects the threshold pumping current of a semiconductor laser. At the same time, the strength of carrier diffusion process is expected to affect the modulation bandwidth of an AC-modulated laser. It is important not only to investigate the combined DC and AC effects due to carrier diffusion, but also to separate the AC effects from that of the combined effects in order to provide design insights for high speed modulation. In this presentation, we apply a hydrodynamic model developed by the present authors recently from the semiconductor Bloch equations. The model allows microscopic calculation of the lateral carrier diffusion coefficient, which is a nonlinear function of the carrier density and plasma temperature. We first studied combined AC and DC effects of lateral carrier diffusion by studying the bandwidth dependence on diffusion coefficient at a given DC current under small signal modulation. The results show an increase of modulation bandwidth with decrease in the diffusion coefficient. We simultaneously studied the effects of nonlinearity in the diffusion coefficient. To clearly identify how much of the bandwidth increase is a result of decrease in the threshold pumping current for smaller diffusion coefficient, thus an effective increase of DC pumping, we study the bandwidth dependence on diffusion coefficient at a given relative pumping. A detailed comparison of the two cases will be presented.

Li, Jian-Zhong

Vehicle Dynamics due to Magnetic Launch Propulsion

The field of Magnetic Levitation Lind Propulsion (MagLev) has been around for over 30 years, primarily in high-speed rail service. In recent years, however, NASA has been looking closely at MagLev as a possible first stage propulsion system for spacecraft. This approach creates a variety of new problems that don't currently exist with the present MagLev trains around the world. NASA requires that a spacecraft of approximately 120,000 lbs be accelerated at two times the acceleration of gravity (2g's). This produces a greater demand on power over the normal MagLev trains that accelerate at around 0.1g. To be able to store and distribute up to 3,000 Mega Joules of energy in less than 10 seconds is a technical challenge. Another problem never addressed by the train industry and, peculiar only to NASA, is the control of a lifting body through the acceleration of and separation from the MagLev track. Very little is understood about how a lifting body will react with external forces, Such as wind gusts and ground effects, while being propelled along on soft springs such as magnetic levitators. Much study needs to be done to determine spacecraft control requirements as well as what control mechanisms and aero-surfaces should be placed on the carrier. Once the spacecraft has been propelled down the track another significant event takes place, the separation of the spacecraft from the carrier. The dynamics involved for both the carrier and the spacecraft are complex and coupled. Analysis of the reaction of the carrier after losing, a majority of its mass must be performed to insure control of the carrier is maintained and a safe separation of the spacecraft is achieved. The spacecraft angle of attack required for lift and how it will affect the carriage just prior to separation, along with the impacts of around effect and aerodynamic forces at ground level must be modeled and analyzed to define requirements on the launch vehicle design. Mechanisms, which can withstand the expected forces and allow the spacecraft to separate at the desired time must be developed. Modeling and analysis of the full-scale system must be developed to derive the requirements for design of the separation mechanisms. A description of several MagLev demonstrators will be presented and the testing and analysis to model the demonstrators will be included.

Galaboff, Zachary J.

Comparison of Type 2 versus Type 3 Carrier Tracking Loops under High Dynamic Signal Conditions

Virtually all deep-space missions today and in the past employed Type 2 tracking loops in their spacecraft receivers. This was acceptable since the uplink from a single ground antenna makes use of very accurate trajectory information where the radiated frequency is Doppler compensated. However, in the desire to conserve ground resources, the technique of Multiple Uplinks per Antenna (MUPA) is being considered when using a single ground antenna to uplink to a constellation of spacecraft within its beam. This single frequency technique requires the use of non-standard signal acquisition techniques since the constellation may realize different orbits and trajectories around a planetary body leading to varying Doppler offsets and dynamics at each member spacecraft. In such a case, a Type 2 tracking loop may not suffice. An earlier study discussed the various methods for acquiring signals in spacecraft receivers with uncompensated Doppler at the uplink station. In the earlier study, three methods of achieving acquisition and lock were discussed for signals with large Doppler frequency offsets as well as high dynamics; 1) a step-and-sweep signal search algorithm, 2) an FFT signal search algorithm, and, 3) on-board tuning of the signal using uploaded trajectory information or lookup tables. On-board tuning appeared a feasible solution given the trend towards utilizing software-defined radios (SDRs). In the absence of on-board tuning, a search algorithm (e.g., step-and-sweep or FFT) could be utilized in the SDR. One such consideration is in the design of the tracking loop filter, where a Type 3 loop may be more amenable to handling large uncompensated Doppler effects. This report presents an analysis of comparing performance of Type 2 versus Type 3 carrier tracking loops when acquiring and tracking signals with large Doppler dynamics.

Abraham, Douglas

Multistage estimation of received carrier signal parameters under very high dynamic conditions of the receiver

A multistage estimator is provided for the parameters of a received carrier signal possibly phase-modulated by unknown data and experiencing very high Doppler, Doppler rate, etc., as may arise, for example, in the case of Global Positioning Systems (GPS) where the signal parameters are directly related to the position, velocity and jerk of the GPS ground-based receiver. In a two-stage embodiment of the more general multistage scheme, the first stage, selected to be a modified least squares algorithm referred to as differential least squares (DLS), operates as a coarse estimator resulting in higher rms estimation errors but with a relatively small probability of the frequency estimation error exceeding one-half of the sampling frequency, provides relatively coarse estimates of the frequency and its derivatives. The second stage of the estimator, an extended Kalman filter (EKF), operates on the error signal available from the first stage refining the overall estimates of the phase along with a more refined estimate of frequency as well and in the process also reduces the number of cycle slips.

Kumar, Rajendra

Multistage estimation of received carrier signal parameters under very high dynamic conditions of the receiver

A multistage estimator is provided for the parameters of a received carrier signal possibly phase-modulated by unknown data and experiencing very high Doppler, Doppler rate, etc., as may arise, for example, in the case of Global Positioning Systems (GPS) where the signal parameters are directly related to the position, velocity and jerk of the GPS ground-based receiver. In a two-stage embodiment of the more general multistage scheme, the first stage, selected to be a modified least squares algorithm referred to as differential least squares (DLS), operates as a coarse estimator resulting in higher rms estimation errors but with a relatively small probability of the frequency estimation error exceeding one-half of the sampling frequency, provides relatively coarse estimates of the frequency and its derivatives. The second stage of the estimator, an extended Kalman filter (EKF), operates on the error signal available from the first stage refining the overall estimates of the phase along with a more refined estimate of frequency as well and in the process also reduces the number of cycle slips.

Kumar, Rajendra

Applications of ultrashort laser pulses in science and technology; Proceedings of the Meeting, The Hague, Netherlands, Mar. 12, 13, 1990

Topics discussed are on the generation of high-intensity femtosecond lasers, the high-repetition and infrared femtosecond pulses, and physics of semiconductors and applications. Papers are presented on the femtosecond pulse generation at 193 nm; the generation of intense subpicosecond and femtosecond pulses; intense tunable subpicosecond and femtosecond pulses in the visible and infrared, generated by optical parametric oscillators; a high-efficiency high-energy optical amplifier for femtosecond pulses; and the generation of solitons, periodic pulsing, and nonlinearities in GaAs. Other papers are on ultrafast relaxation dynamics of photoexcited carriers in GaAs, high-order optical nonlinear susceptibilities of transparent glasses, subnanosecond risetime high-power pulse generation using photoconductive bulk GaAs devices, femtosecond studies of plasma formation in crystalline and amorphous silicon, and subpicosecond dynamics of hot carrier relaxation in InP and GaAs.

Antonetti, Andre

Application of the concept of dynamic trim control to automatic landing of carrier aircraft

The results of a simulation study of an alternative design concept for an automatic landing control system are presented. The alternative design concept for an automatic landing control system is described. The design concept is the total aircraft flight control system (TAFCOS). TAFCOS is an open loop, feed forward system that commands the proper instantaneous thrust, angle of attack, and roll angle to achieve the forces required to follow the desired trajector. These dynamic trim conditions are determined by an inversion of the aircraft nonlinear force characteristics. The concept was applied to an A-7E aircraft approaching an aircraft carrier. The implementation details with an airborne digital computer are discussed. The automatic carrier landing situation is described. The simulation results are presented for a carrier approach with atmospheric disturbances, an approach with no disturbances, and for tailwind and headwind gusts.

Smith, G. A.