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Results for “COTS components”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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DOE OSTI2025

Update on PIP-II beam pattern generator upgrade

The beam pattern generator enables the transfer of beam pulses from the PIP-II linac to the Booster ring, the two RF systems being non-harmonically related. It is synchronized to the timing system to provide beam arrival information to the downstream accelerator subsystems. The design is being upgraded with COTS components and is being developed with a collaboration with SLAC.The pattern generation, digital signal processing and the user interface to an external EPICS server are integrated onto the ARM processor of the SOCFPGA. The progress of the system development is described.

Varghese, P. [Fermilab]↗

DOE OSTI2025

Digitally Optimized Autonomous Robotic System for Hanford Waste Tank Handling [Slides]

Idaho National Laboratory (INL) is developing a robotic system and digital twin to perform monitoring, inspection, and mapping of underground tank pits at the Hanford Site, operated by the U.S. Department of Energy (USDOE). The Autonomous Pit Exploration System (APES) will consist of four primary components: an electric vehicle truck with a robotic system developed by INL to deploy payloads into the tanks through small diameter preexisting risers, a robotic arm developed by Florida International University (FIU) for the purposes of deploying a variety of payloads into the tank pit environment, and a small robotic COTS crawler platform for examining the bottom of the pits.

42 - ENGINEERING↗

DOE OSTI2026

Gallium Arsenide Semiconductor Opening Switches: Enabling Nanosecond High Powering Pulsed Systems

The goal of this work awas to investigate design manufacturing semiconductor opening switches (SOS) in both silicon and gallium arsenide (GaAs). Solid-state opening switches are critical components for pulsed power systems and applications in directed energy, dielectric wall accelerators, and novel semiconductor manufacturing techniques. Under this funding, we have developed silicon SOS designs that suppresses an unwanted prepulse, increases the peak output voltage by about 10 percent, and reduces the pulse rise time by ~ 4x compared with more conventional profiles. Through this effort we have improved device fabrication and bonding techniques. Additionally, work on this the GaAs opening switch has defined a unique application space that these devices are suited for. GaAs opening switches have short risetimes and pulse widths compared to silicon devices, however the short carrier lifetime of GaAs makes the circuit design more challenging than in silicon. For high PRF operation, the lifetime of the GaAs is an advantage compared to silicon. TCAD simulations of GaAs devices have been used to optimize a GaAs profile. Additionally, we have designed pulsers with sub 50ns reserve pump times and tested GaAs COTs PIN diodes in them.

42 ENGINEERING↗