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At least 19 records

EMI from Spacecraft Docking Systems Spacecraft Charging - Plasma Contact Potentials

The plasma contact potential of a visiting vehicle (VV), such as the Orion Service Module (SM), is determined while docking at the Orion Crew Exploration Vehicle (CEV). Due to spacecraft charging effects on-orbit, the potential difference between the CEV and the VV can be large at docking, and an electrostatic discharge (ESD) could occur at capture, which could degrade, disrupt, damage, or destroy sensitive electronic equipment on the CEV and/or VV. Analytical and numerical models of the CEV are simulated to predict the worst-case potential difference between the CEV and the VV when the CEV is unbiased (solar panels unlit: eclipsed in the dark and inactive) or biased (solar panels sunlit: in the light and active).

Norgard, John D.↗

Rugged pressed disk electrode has low contact potential

Pressed-disk electrode with low contact potential monitors physiological processes. It consists of silver and silver chloride combined with bentonitic clay. The clay affords a surface that permits use over extended periods without contact deterioration.

Day, J. L.↗

2004 TT357: A Potential Contact Binary in the Trans-Neptunian Belt

We report photometric observations of the trans-Neptunian object 2004 TT(sub 357) obtained in 2015 and 2017 using the 4.3 m Lowell's Discovery Channel Telescope. We derive a rotational period of 7.79 +/- 0.01 hr and a peak-to-peak lightcurve amplitude of 0.76 +/- 0.03 mag. 2004 TT(sub 357) displays a large variability that can be explained by a very elongated single object or can be due to a contact/close binary. The most likely scenario is that 2004 TT(sub 357) is a contact binary. If it is in hydrostatic equilibrium, we find that the lightcurve can be explained by a system with a mass ratio q(sub min) = 0.45 +/- 0.05, and a density of p(sub min) = 2 g/cu.cm, or less likely a system with q(sub max) = 0.8 +/- 0.05, and ρ(sub max) = 5 g/cu.cm. Considering a single triaxial ellipsoid in hydrostatic equilibrium, we derive a lower limit to the density of 0.78 g/cu.cm, and an elongation (a/b) of 2.01 assuming an equatorial view. From Hubble Space Telescope data, we report no resolved companion orbiting 2004 TT(sub 357). Despite an expected high fraction of contact binaries in the trans-Neptunian belt, 2001 QG(sub 298) is the unique confirmed contact binary in the trans- Neptunian belt, and 2004 TT(sub 357) is only the second candidate to this class of systems, with 2003 SQ(sub 317).

Thirouin, Audrey↗

Electric fields and double layers in plasmas

Various mechanisms for driving double layers in plasmas are briefly described, including applied potential drops, currents, contact potentials, and plasma expansions. Some dynamical features of the double layers are discussed. These features, as seen in simulations, laboratory experiments, and theory, indicate that double layers and the currents through them undergo slow oscillations which are determined by the ion transit time across an effective length of the system in which double layers form. It is shown that a localized potential dip forms at the low potential end of a double layer, which interrupts the electron current through it according to the Langmuir criterion, whenever the ion flux into the double is disrupted. The generation of electric fields perpendicular to the ambient magnetic field by contact potentials is also discussed. Two different situations were considered; in one, a low-density hot plasma is sandwiched between high-density cold plasmas, while in the other a high-density current sheet permeates a low-density background plasma. Perpendicular electric fields develop near the contact surfaces. In the case of the current sheet, the creation of parallel electric fields and the formation of double layers are also discussed when the current sheet thickness is varied. Finally, the generation of electric fields and double layers in an expanding plasma is discussed.

Singh, Nagendra↗

Electric fields and double layers in plasmas

Various mechanisms for driving double layers (DLs) in plasmas are described, including applied potential drops, currents, contact potentials, and plasma expansions. Somne dynamic features of the DLs are discussed; and it is demonstrated that DLs and the currents through them undergo slow oscillations, determined by the ion transit time across an effective length of the system in which the DLs form. It is shown that a localized potential dip forms at the low potential end of a DL, which interrupts the electron current through it according to the Langmuir criterion whenever the ion flux into the DL is disrupted. Also considered is the generation of electric fields perpendicular to the ambient magnetic field by contact potentials.

Singh, Nagendra↗

The morphological evolution of mare-highland contacts - A potential measure of relative mare surface age

The uniform breaks in slopes along many mare-highland contacts may be debris aprons transported primarily by impact erosion at relatively slow rates. Other suggestions, such as the 'high lava mark' hypothesis, appear inadequate to explain all of the unique characteristics of these widespread features. There is a reasonable correlation of overall slope form (profile) and apron distribution with established mare age provinces. Distinctive debris aprons in the younger maria could represent the initial stages of lunar slope degradation produced mainly by the postmare impact flux. The growth of debris aprons must be qualitatively related to the impact flux recorded on adjacent mare surfaces and could provide an approximate means of extrapolating relative mare ages to highland scarps and crater walls. By combining detailed measurements of lunar slopes with development of a realistic model for impact modification of these features, approximate limits for the cumulative lunar flux distribution through time might be derived.

Young, R. A.↗

A smooth contact algorithm for the combined finite discrete element method

From its inception, the combined finite discrete element method has used a distributed potential contact force algorithm to resolve interaction between finite elements. The contact interaction algorithm relies on evaluation of the contact force potential field. The problem with existing algorithms is that the potential field introduces artificial numerical non-smoothness in the contact force. This work introduces a smooth potential field based on the finite element topology, and a generalized contact interaction law is constructed on top of the smooth potential field. Further, a number of validation cases for the proposed algorithm, considering different shapes of discrete elements, are presented, and detailed aspects of the proposed contact interaction law are tested with numerical examples.

97 MATHEMATICS AND COMPUTING↗

Enhanced van der Waals epitaxy of germanium by out-of-plane dipole moment induced from transferred graphene on TiN/AlN multilayers

We report recent advances in 3D/2D heterostructures have opened up tremendous opportunities in building highly flexible and durable optoelectronic devices. However, the inherit lack of interfacial bonding and low surface energy of van der Waals surfaces limit the nucleation and growth of 3D materials. Enhancing wettability by providing a porous buffer is effective in growing compound semiconductors on graphene while van der Waals epitaxy of Ge remains challenging. Here, the nucleation of Ge has been significantly improved from an islanded mode to granular modes by using a TiN/AlN multilayered buffer prior to Ge/graphene integration. Highly textured Ge growth with dominating (111), (220), and (311) peaks are identified by x-ray diffraction. The microstructure of the buffer TiN/AlN demonstrates a polycrystalline quality with clean interfaces between each interlayer and the substrate. Kelvin probe force microscopy measurements along the lateral TiN/AlN interface identify a potential drop corresponding to the AlN phase. This contact potential difference between TiN and AlN is the key in generating the out-of-plane dipole moment that modifies the surface energy of the monolayer graphene, resulting in enhanced wettability of the Ge adatoms nucleated on top. Surface dipole induced nucleation of 3D semiconductor thin films on 2D materials via the proper design of buffer layer is fundamentally important to enhance the 3D/2D growth toward flexible optoelectronic applications.

36 MATERIALS SCIENCE↗

Physical electronics and surface physics

Physical electronics and surface physics - contact potential measurements of adsorption of oxygen on Ta and steady-state analysis of desorption of molecules from nonuniform surfaces

CONTACT POTENTIAL↗

Microstructural Evaluation of Phase Instability in Large Bandgap Metal Halide Perovskites

The optoelectronic performance of organic–inorganic halide perovskite (OIHP)-based devices has been improved in recent years. Particularly, solar cells fabricated using mixed-cations and mixed-halides have outperformed their single-cation and single-halide counterparts. Yet, a systematic evaluation of the microstructural behavior of mixed perovskites is missing despite their known composition-dependent photoinstability. Here, we explore microstructural inhomogeneity in (FAPbI 3 ) x (MAPbBr 3 ) 1– x using advanced scanning probe microscopy techniques. In this work, contact potential difference (CPD) maps measured by Kelvin probe force microscopy show an increased fraction of grains exhibiting a low CPD with flat topography as MAPbBr 3 concentration is increased. The higher portion of low CPD contributes to asymmetric CPD distribution curves. Chemical analysis reveals these grains being rich in MA, Pb, and I. The composition-dependent phase segregation upon illumination, reflected on the emergence of a low-energy peak emission in the original photoluminescence spectra, arises from the formation of such grains with flat topology. Bias-dependent piezo-response force microscopy measurements, in these grains, further confirm vigorous ion migration and cause a hysteretic piezo-response. Our results, therefore, provide insights into the microstructural evaluation of phase segregation and ion migration in OIHPs pointing toward process optimization as a mean to further enhance their optoelectronic performance.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Characterization of Mn 5 Ge 3 Contacts on a Shallow Ge/SiGe Heterostructure

Mn 5 Ge 3 is a ferromagnetic phase of the Mn-Ge system that is a potential contact material for efficient spin injection and detection. Here, we investigate the creation of Mn 5 Ge 3 -based contacts on a Ge/SiGe quantum well heterostructure via solid-state synthesis. X-ray diffraction spectra fitting indicates the formation of Mn 5 Ge 3 -based contacts on bulk Ge and Ge/SiGe. High-resolution scanning transmission electron microscopy imaging and energy dispersive X-ray spectroscopy verify the correct Mn 5 Ge 3 -based phase formation. Schottky diode measurements, transmission line measurements, and Hall measurements reveal that Mn 5 Ge 3 -based contacts serve as good p-type contacts for Ge/SiGe quantum well heterostructures due to having a low Schottky barrier height of 0.10 eV (extracted from a Mn 5 Ge 3 /n-Ge analogue) and a contact resistance in the order of 1 kΩ. Furthermore, we show that these electrical characteristics have a gate-voltage dependence, thereby providing tunability.

36 MATERIALS SCIENCE↗

Field-Coupled Water Splitting with Metal-Free Donor–Acceptor Covalent Organic-Framework Junctions

Advancing metal-free electrocatalysts for hydrogen and oxygen evolution reactions (HER/OER) across acidic and alkaline media requires coordinated control of intermediate binding thermodynamics, interfacial charge delivery, and near-electrode transport dynamics. Here, we design amide-linked benzene–triazine covalent organic frameworks (BTA/TzTA-Hz COFs) and integrate them with carbon nanotubes (CNTs) to form COF–CNT junctions that establish a built-in interfacial electric field. Density functional theory (DFT) and electrostatic potential maps indicate complementary active motifs, with benzene-proximal fragments associated with HER and triazine-proximal motifs associated with OER. CNT integration shifts the contact-potential difference by ≈0.20 V, while operando electrochemical impedance spectroscopy suggests partially separable high-frequency junction-charging and lower-frequency Faradaic/transport responses. A 300 mT static magnetic field lowers the HER and OER overpotentials by tens of millivolts. Under anodic bias, the effective interfacial charging capacitance increases, and Mott–Schottky analysis shows an apparent ∼0.15 V flat-band shift with an essentially unchanged slope. Together, these observations are consistent with field-perturbed interfacial charging and altered bias partitioning. Field-dependent impedance and bubble imaging are consistent with magnetohydrodynamic convection that promotes bubble detachment and near-electrode mass transport for both half-reactions, and they reveal an OER-specific high-frequency perturbation under anodic bias. Under field, the heterostructure reaches an OER onset overpotential of ∼261 mV and requires an overpotential of 366 mV at 10 mA cm –2 in alkaline electrolyte. These results illustrate how reticular-framework chemistry, junction engineering, and both built-in and applied fields can program reactivity through interfacial electrostatics and near-electrode transport in organic-framework electrocatalysts.

Garcia-Enriquez, Lissette [Univ. of Texas at El Pa↗

Resolving surface potential variation in Ge/MoS 2 heterostructures with Kelvin probe force microscopy

In this work, we employ an atomic force microscopy-based technique, Kelvin probe force microscopy, to analyze heterogeneities of four different 2D/3D Ge/MoS 2 heterostructures with Ge chemical vapor deposition (CVD) time. High-contrast spatially resolved contact potential difference (CPD) maps reveal the evolution of the samples by Ge deposition. The CPD map in an as-prepared sample does not display any heterogeneity, but CPD contrasts along the grain boundaries are obviously noticed as Ge is deposited on MoS 2 . With a sufficiently long Ge CVD deposition time, strong grain-to-grain CPD variations over the 2D/3D heterostructures are observed. The results show the variations of the work function from grain to grain that are attributed to the strain induced by the Ge island formation on the cracked MoS2 initiated by sulfur vacancies.

36 MATERIALS SCIENCE↗

Gridless retarding potential analyzer for use in very-low-energy charged particle detection

The theory of the hyperbolic retarding potential analyzer in the electrostatic mode is developed in detail and verified in the laboratory. A monoenergetic electron beam is used for the laboratory investigation. The analyzer (acronym HARP) has advantages over other conventional electrostatic analyzers; among them are less contact potential influence and high throughput because of the symmetry shape of the analyzer. The most useful application of the HARP is in detecting low-energy charged particles. A sample of low-energy particle data obtained in the earth's ionosphere is given.

Shyn, T. W.↗