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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 19 records
All sourcesNASA NTRSDOE OSTI
DOE OSTI2024

Unveiling Baryon Charge Carriers through Charge Stopping in Isobar Collisions

Utilizing a comprehensive (3 + 1)⁢D relativistic hydrodynamic framework with multiple conserved charge currents and charge-dependent lattice-QCD-based equation of state, we study the baryon and electric charge number deposition at midrapidity in isobar Ru + Ru and Zr + Zr collisions at the center of mass energy $\sqrt{s}_{NN}$ = 200 GeV. Comparing our predictions with upcoming experimental data from the Relativistic Heavy Ion Collider will shed light on the existence of baryon junctions.

73 NUCLEAR PHYSICS AND RADIATION PHYSICS↗
DOE OSTI2017

Charge carrier holes and Majorana fermions

Understanding Luttinger holes in low dimensions is crucial for numerous spin-dependent phenomena and nanotechnology. In particular, hole quantum wires that are proximity coupled to a superconductor is a promising system for the observation of Majorana fermions. Earlier treatments of confined Luttinger holes ignored a mutual transformation of heavy and light holes at the heteroboundaries. Here, we derive the effective hole Hamiltonian in the ground state. The mutual transformation of holes is crucial for Zeeman and spin-orbit coupling, and results in several spin-orbit terms linear in momentum in hole quantum wires. We discuss the criterion for realizing Majorana modes in charge carrier hole systems. GaAs or InSb hole wires shall exhibit stronger topological superconducting pairing, and provide additional opportunities for its control compared to InSb electron systems.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2015

Charge-carrier dynamics in polycrystalline thin-film CuIn{sub 1−x}Ga{sub x}Se{sub 2} photovoltaic devices after pulsed laser excitation: Interface and space-charge region analysis

We used time-resolved photoluminescence (TRPL) spectroscopy to analyze time-domain and spectral-domain charge-carrier dynamics in CuIn{sub 1−x}Ga{sub x}Se{sub 2} (CIGS) photovoltaic (PV) devices. This new approach allowed detailed characterization for the CIGS/CdS buffer interface and for the space-charge region. We find that dynamics at the interface is dominated by diffusion, where the diffusion rate is several times greater than the thermionic emission or interface recombination rate. In the space-charge region, the electric field of the pn junction has the largest effect on the carrier dynamics. Based on the minority-carrier (electron) drift-rate dependence on the electric field strength, we estimated drift mobility in compensated CuIn{sub 1−x}Ga{sub x}Se{sub 2} (with x ≈ 0.3) as 22 ± 2 cm{sup 2}(Vs){sup −1}. Analysis developed in this study could be applied to evaluate interface and junction properties of PV and other electronic devices. For CIGS PV devices, TRPL spectroscopy could contribute to understanding effects due to absorber compositional grading, which is one of the focus areas in developing record-efficiency CIGS solar cells.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Charge-carrier transport and recombination in heteroepitaxial CdTe

We analyze charge-carrier dynamics using time-resolved spectroscopy and varying epitaxial CdTe thickness in undoped heteroepitaxial CdTe/ZnTe/Si. By employing one-photon and nonlinear two-photon excitation, we assess surface, interface, and bulk recombination. Two-photon excitation with a focused laser beam enables characterization of recombination velocity at the buried epilayer/substrate interface, 17.5 μm from the sample surface. Measurements with a focused two-photon excitation beam also indicate a fast diffusion component, from which we estimate an electron mobility of 650 cm² (Vs)⁻¹ and diffusion coefficient D of 17 cm² s⁻¹. We find limiting recombination at the epitaxial film surface (surface recombination velocity S surface = (2.8 ± 0.3) × 10⁵cm s ⁻¹) and at the heteroepitaxial interface (interface recombination velocity S interface = (4.8 ± 0.5) × 10⁵ cm s⁻¹). The results demonstrate that reducing surface and interface recombination velocity is critical for photovoltaic solar cells and electronic devices that employ epitaxial CdTe.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2019

Defect-Mediated Charge-Carrier Trapping and Nonradiative Recombination in WSe 2 Monolayers

Nonradiative charge-carrier recombination in transition-metal dichalcogenide (TMD) monolayers severely limits their use in solar energy conversion technologies. Because defects serve as recombination sites, developing a quantitative description of charge-carrier dynamics in defective TMD monolayers can shed light on recombination mechanisms. Herein we report a first-principles investigation of charge-carrier dynamics in pristine and defective WSe 2 monolayers with three of the most probable defects, namely, Se vacancies, W vacancies, and SeW antisites. We predict that Se vacancies slow down recombination by nearly an order of magnitude relative to defect-free samples by breaking the monolayer’s symmetry and thereby reducing the spectral intensity of the A 1g phonon mode that promotes recombination in the pristine monolayer. By contrast, we find W vacancies accelerate recombination by more than an order of magnitude, with half of the recombination events bypassing charge traps. The subsequent dynamics feature both charge trapping and charge-trap-assisted recombination. Although SeW antisites also slightly accelerate recombination, the predicted mechanism is different from the W vacancy case. First, a shallow energy level traps a photoexcited electron. Then, both shallow- and deep-trap-assisted recombination can occur simultaneously. Accelerated recombination arises for W vacancies and SeW antisites because they introduce new phonon modes that strongly couple to electron and hole dynamics. This work thus provides a detailed understanding of the mechanisms behind charge-carrier recombination in WSe 2 monolayers with distinct defects. Furthermore, materials engineering, particularly to avoid W vacancies, could advance this technology. The insights derived are important for future design of high-performance photoactive devices based on WSe 2 monolayers.

14 SOLAR ENERGY↗
DOE OSTI2021

Enhanced charge carrier lifetime and mobility as a result of Rb and Cs incorporation in hybrid perovskite

Alkali addition in organic–inorganic perovskite has become the standard recipe for achieving solar cells with efficiencies exceeding 20%, but the mechanism is not well understood. We use non-contact carrier lifetime measurements, mobility measurements, and synchrotron-based x-ray characterization techniques to show that there is a unique benefit to adding hybrid perovskite samples with Rb and Cs simultaneously. When either Rb or Cs is added, charge carrier mobility increases with alkali concentration. Charge carrier lifetime benefits from alkali incorporation as well, but is optimized with only moderate concentration at 1%. When both Rb and Cs are introduced, however, the high mobility is maintained and the charge carrier lifetime increases considerably. Our results show that when incorporated alone, Rb and Cs have very similar roles in a perovskite crystal, but when co-added, halide distribution becomes homogenized correlating with improved charge transport properties.

Erodici, Matthew P.↗
DOE OSTI2014

Charge carrier transport properties in layer structured hexagonal boron nitride

Due to its large in-plane thermal conductivity, high temperature and chemical stability, large energy band gap (~ 6.4 eV), hexagonal boron nitride (hBN) has emerged as an important material for applications in deep ultraviolet photonic devices. Among the members of the III-nitride material system, hBN is the least studied and understood. The study of the electrical transport properties of hBN is of utmost importance with a view to realizing practical device applications. Wafer-scale hBN epilayers have been successfully synthesized by metal organic chemical deposition and their electrical transport properties have been probed by variable temperature Hall effect measurements. The results demonstrate that undoped hBN is a semiconductor exhibiting weak p-type at high temperatures (> 700 °K). The measured acceptor energy level is about 0.68 eV above the valence band. In contrast to the electrical transport properties of traditional III-nitride wide bandgap semiconductors, the temperature dependence of the hole mobility in hBN can be described by the form of μ ∝ (T/T{sub 0}){sup −α} with α = 3.02, satisfying the two-dimensional (2D) carrier transport limit dominated by the polar optical phonon scattering. This behavior is a direct consequence of the fact that hBN is a layer structured material. The optical phonon energy deduced from the temperature dependence of the hole mobility is ħω = 192 meV (or 1546 cm{sup -1}), which is consistent with values previously obtained using other techniques. The present results extend our understanding of the charge carrier transport properties beyond the traditional III-nitride semiconductors.

36 MATERIALS SCIENCE↗
DOE OSTI2018

Charge Carrier Activity on Single-Particle Photo(electro)catalysts: Toward Function in Solar Energy Conversion

Understanding the fundamental properties of charge carriers on the surface of semiconductor photo(electro)catalysts is key to the rational design of efficient photo(electro)catalytic devices for sunlight-driven energy conversion. Here high spatial resolution information is always desirable because of the ubiquitous heterogeneity in semiconductor particles. In this Perspective, we review the latest advances in nanoscale imaging and quantitative analysis of charge carrier activities on individual semiconductor particles down to subparticle resolution, covering the approaches of single-molecule super-resolution fluorescence imaging, scanning electron microscopy, and photoluminescence microscopy. We further highlight direct, operando functional assessments of their performances toward the targeted photo(electro)-catalytic processes through single- and subparticle photocurrent measurements. Here, we also discuss the significance of establishing quantitative relations between the desired functions of photo(electro)catalysts and their surface charge carrier activities. These fundamental relations can provide guiding principles for rationally engineering photo(electro)catalytic systems, for example with cocatalysts, for a broad range of applications.

14 SOLAR ENERGY↗
DOE OSTI2021

Flow and extraction of energy and charge carriers in hybrid plasmonic nanostructures

Strong interactions of electromagnetic fields with plasmonic nanomaterials have been exploited in various applications. These applications have centred on plasmon-enhanced scattering rates in nearby molecules or plasmon-induced heating. A question that has emerged recently is whether it is possible to use plasmonic nanostructures in a range of hot electron (hole) applications, including photocatalysis, photovoltaics and photodetection. These applications require coupling of a plasmonic component, which amplifies the interaction of light with the material, to an attached non-plasmonic component that extracts this energy in the form of electronic excitations to perform a function. Here, in this Perspective, we discuss recent work in the emerging field of hybrid plasmonics. We focus on fundamental questions related to the nanoscopic flow of energy and excited charge carriers in these multicomponent materials. We also address critical misconceptions, challenges and opportunities that require more attention.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2023

Why Increased CdSeTe Charge Carrier Lifetimes and Radiative Efficiencies did not Result in Voltage Boost for CdTe Solar Cells

After a focused effort over the last decade, order-of-magnitude improvements in doping and electro-optical characteristics (radiative efficiency, carrier lifetime, and passivation) have been reported for polycrystalline CdSeTe solar cells. Surprisingly, this did not result in higher solar cell voltages regardless of device contacting layers, absorber grading profiles, and other changes in device architecture. From detailed evaluation of radiative emission and carrier dynamics in CdSeTe heterostructures and devices, it is shown that the complexity introduced to the absorber to achieve lifetime and passivation metrics resulted in charge carrier trapping, which now negatively affects CdSeTe absorbers.

CdTe↗
DOE OSTI2012

Photoinduced Charge Carrier Generation and Decay in Sequentially Deposited Polymer/Fullerene Layers: Bulk Heterojunction vs. Planar Interface

In this work, we use the time-resolved microwave conductivity (TRMC) technique to study the dynamics of charge carrier generation in sequentially deposited conjugated polymer/fullerene layers. These layers are either fully solution-processed, using orthogonal solvents for the layers of the polymer poly(3-hexylthiophene) (P3HT) and the fullerene phenyl-C{sup 61}-butyric acid methyl ester (PCBM), or prepared by thermally evaporating a C{sup 60} layer onto P3HT films. Our work is motivated by the remarkable efficiency of organic photovoltaic (OPV) devices using a sequentially processed P3HT/PCBM active layer. Here we use an electrodeless photoconductivity probe, so we can photoexcite the sample either through the polymer or the fullerene layer. We use samples with extremely thick P3HT films (2.4 {micro}m) and show that excitation from either side of both as-cast and thermally annealed sample yields virtually identical results, consistent with mixing of the PCBM into the polymer film. We also compare solution-deposited samples to samples made by thermally evaporating C{sup 60} on P3HT, and find that we can distinguish between charge generation in bulk-P3HT and at the polymer/fullerene interface. We show that, despite their morphological differences, the carrier dynamics in the sequentially processed samples resemble those of mixed, bulk heterojunction (BHJ) systems. All of this is consistent with the idea that PCBM readily mixes into the P3HT film in sequentially deposited P3HT/PCBM samples, although the total amount of fullerene mixed into the P3HT appears to be less than that typically used in an optimized BHJ. Finally, we discuss the implications for OPV device architectures prepared by sequential deposition from solution.

14 SOLAR ENERGY↗