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Results for “CADMIUM SULFIDE”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 19 records
All sourcesNASA NTRSDOE OSTI
NASA NTRS1971

Effect of load voltage on thin film cuprous sulfide: Cadmium sulfide solar cells thermally cycled in a simulated space environment

Thin-film Cu2S-CdS solar cells, loaded at various fixed values of load resistance, were thermally cycled for 1429 cycles in a simulated space environment. Cell performance was measured under controlled conditions in air before and after thermal cycling. These data were used to determine the effect of load voltage on cell performance. The performance of the cells was relatively independent of load voltage up to about 0.39 volt. This appears to be a threshold voltage, beyond which there was a significant loss in cell performance. Fortunately, this threshold voltage appears to be sufficiently higher than the maximum power voltage of 0.33 volt so that it can be avoided in most applications.

Smithrick, J. J.↗
DOE OSTI2016

Evolution of oxygenated cadmium sulfide (CdS:O) during high-temperature CdTe solar cell fabrication

Oxygenated cadmium sulfide (CdS:O) produced by reactive sputtering has emerged as a promising alternative to conventional CdS for use as the n-type window layer in CdTe solar cells. Here, complementary techniques are used to expose the window layer (CdS or CdS:O) in completed superstrate devices and combined with a suite of materials characterization to elucidate its evolution during high temperature device processing. During device fabrication amorphous CdS:O undergoes significant interdiffusion with CdTe and recrystallization, forming CdS1-yTey nanocrystals whose Te fraction approaches solubility limits. Significant oxygen remains after processing, concentrated in sulfate clusters dispersed among the CdS1-yTey alloy phase, accounting for ~30% of the post-processed window layer based on cross-sectional microscopy. Interdiffusion and recrystallization are observed in devices with un-oxygenated CdS, but to a much lesser extent. Etching experiments suggest that the CdS thickness is minimally changed during processing, but the CdS:O window layer is reduced from 100 nm to 60-80 nm, which is confirmed by microscopy. Alloying reduces the band gap of the CdS:O window layer to 2.15 eV, but reductions in thickness and areal density improve its transmission spectrum, which is well matched to device quantum efficiency. The changes to the window layer in the reactive environments of device fabrication are profoundly different than what occurs by thermal annealing in an inert environment, which produced films with a band gap of 2.4 eV for both CdS and CdS:O. These results illustrate for the first time the significant changes that occur to the window layer during processing that are critical to the performance of CdTe solar cells.

14 SOLAR ENERGY↗
DOE OSTI2015

Properties of reactively sputtered oxygenated cadmium sulfide (CdS:O) and their impact on CdTe solar cell performance

Oxygenated cadmium sulfide (CdS:O) is commonly used as the n-type window layer in high-performance CdTe heterojunction solar cells. This layer is deposited by reactive sputtering, but the optimal amount of oxygen in the sputtering ambient is highly dependent on the specific system and process employed. In this work, the intrinsic properties of CdS:O were measured as a function of the oxygen content (0%–10%) in the sputtering ambient and correlated to device performance with the goal of better defining optimal CdS:O properties for CdTe solar cells. Optimal performance was found using CdS:O films that contained ∼40 at. % oxygen as measured by Rutherford backscattering spectrometry. X-ray photoelectron spectroscopy confirmed these results and showed that oxygen is incorporated primarily as oxygenated sulfur compounds (SO{sub x}). Device efficiency improved from 10.5% using CdS to >14% with CdS:O due largely to increases in short-circuit current density as well as a modest improvement in open-circuit voltage. The transparency of the CdS:O films was well correlated with observed improvements in blue quantum efficiency with increasing oxygen content. The optical bandgap of as-deposited CdS:O was identified as a simple metric for process optimization and transfer, with 2.8 eV being ideal for the device architecture employed.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
NASA NTRS1971

Simulated space environment tests on cadmium sulfide solar cells

Cadmium sulfide (Cu2s - CdS) solar cells were tested under simulated space environmental conditions. Some cells were thermally cycled with illumination from a Xenon-arc solar simulator. A cycle was one hour of illumination followed immediately with one-half hour of darkness. In the light, the cells reached an equilibrium temperature of 60 C (333 K) and in the dark the cell temperature dropped to -120 C (153 K). Other cells were constantly illuminated with a Xenon-arc solar simulator. The equilibrium temperature of these cells was 55 C (328 K). The black vacuum chamber walls were cooled with liquid nitrogen to simulate a space heat sink. Chamber pressure was maintained at 0.000001 torr or less. Almost all of the solar cells tested degraded in power when exposed to a simulated space environment of either thermal cycling or constant illumination. The cells tested the longest were exposed to 10.050 thermal cycles.

Clarke, D. R.↗
NASA NTRS1980

Method of epitaxially depositing cadmium sulfide

A single crystal layer of either cadmium sulfide or an alloy of cadmium sulfide and indium phosphide is epitaxially deposited on a substrate of cadmium sulfide by liquid phase epitaxy using indium as the solvent.

Hawrylo, Frank Z.↗