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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 19 records
All sourcesNASA NTRSDOE OSTI
DOE OSTI2024

Developments for Novel Module Architecture for Lower CapEx and Improved Recyclability for c-Si PV Modules

Photovoltaic (PV) energy production is currently increasing at a significant rate. A novel module architecture has been demonstrated that has potential for reducing manufacturing cost while improving module reliability and recycling for c-Si PV which utilizes an edge-seal. Referred to as Edge Sealed Module (ESM), this architecture eliminates the vacuum lamination process and cross-linked encapsulants on the interior of the module. Functioning prototypes of c-Si have been fabricated for stress testing in collaboration with National Renewable Energy Laboratories (NREL). These modules are being tested and compared to traditionally manufactured modules. Based on preliminary results, this module architecture is a potentially viable solution for improving the manufacturing cost and recyclability of PV modules while enhancing module performance.

costs↗
DOE OSTI2025

Nanopinhole-Enabled, Hole-Selective Poly-Si/SioxNy Passivating Contacts on Textured c-Si for Si Solar Cells

The next-generation silicon photovoltaics will be based on passivating electron- and hole-selective contacts with both very low interface recombination and contact resistivities. While the emerging mainstream TOPCon technology has developed excellent electron-selective poly-Si/tunneling SiOx contacts, hole-selective contacts, especially on textured surfaces, have remained a significant challenge. This contribution introduces novel high-performance hole selective poly-Si contacts on pyramid-textured Si, enabled by electrochemically produced hole transport nanopinholes in a 10 nm oxynitride passivating dielectric stack capped by p+ poly-Si. The highly passivating oxynitride layer is produced via atomic intermixing of O and N atoms in the initial SiOx/SiNy layer stack upon thermal annealing. Carrier transport is governed by nanopinhole density and size are tuned by Ag nanoparticle electrodeposition and surface attachment chemistries. This results in passivating hole contact resistivities in the m..omega..-cm2 range, while preserving interface recombination current prefactor around 5 fA/cm2.

14 SOLAR ENERGY↗
DOE OSTI2026

Resilience of High-Efficiency CdSeTe:As and CdSeTe:Cu Solar Cells to Proton Irradiation

Power generation in space is currently dominated by expensive III-V multi-junction photovoltaic (PV) devices and cheap crystalline silicon (c-Si) PV devices. Both of these technologies degrade rapidly in proton-radiation-rich space environments, such as the Van Allen belt. The present study of cadmium selenide telluride- (CdSeTe-) based PV devices exposed to 150-to-1500 keV proton irradiation with fluences up to 9 x 1013 cm-2 reveal a more radiation-hard alternative to III-V and c-Si PV technologies. We report on measurement and analysis of current density vs voltage (JV), external quantum efficiency (EQE), external radiative efficiency, and capacitance vs voltage (CV) characteristics. JV characteristics of As-doped CdSeTe devices show 80% remaining power conversion efficiency (PCE) relative to unexposed controls when exposed to 650 keV protons at a fluence of 1012 cm-2. Under these same irradiation conditions, Cu-doped CdSeTe devices demonstrate an even better 95% PCE retention compared with unirradiated control devices. Evidence of radiation-induced absorber p-type doping compensation is observed in the glass-side EQE at 0 V and CV characteristics of most of the irradiated CdSeTe:As devices, but clear compensation is evident only for the most heavily irradiated CdSeTe:Cu devices. Elevated blue-green photocurrent in the film-side 0 V EQE suggests a buried junction in the most heavily irradiated CdSeTe:As devices. Although CdSeTe:Cu devices are the more resilient of the CdSeTe structures, both CdSeTe-based technologies are radiation-hard when compared to c-Si and III-V multi-junction PV.

14 SOLAR ENERGY↗
NASA NTRS1983

Microcrystalline silicon growth for heterojunction solar cells

A total of sixteen runs of e-beam vacuum deposition of p type microcrystalline Si (m-Si) films were attempted on n type or p-n junction single crystalline Si (C-Si) substrates. The m-Si film thickness varied from .15 to .7 um and metal contacts were deposited after plasma hydrogenation. The p-m-Si on n-c-Si structure had a Voc of up to 490 m V while no Voc improvements were observed in the p-m-Si on p-n C-Si structure against p-n controls. Both CFF and Jsc were lower than control. Possible problem areas were interfaced between m-Si and C-si and the back contacts due to lack of sintering for fear of dehydrogenation.

Iles, P. A.↗
DOE OSTI2026

Microstructure and Composition of Passivating Interfaces in Silicon Heterojunction Solar Modules Weathered in Different Climates

Sanyo/Panasonic patented silicon heterojunction with intrinsic thin layer (HIT) solar cells in the 1990's, which demonstrated world record photovoltaic (PV) efficiency around 2014 and inspired the newer generations of silicon heterojunction technology (SHJ) as well as the current world record back-contact PV cell designs. The high-quality passivation strategy, utilizing ultra-thin layers of hydrogenated amorphous silicon (a-Si:H), leads to high voltages and long carrier lifetimes, but these qualities may degrade over time as the modules operate outdoors. Here, we investigate local microstructure and composition at the interface layers of cells from HIT modules weathered in a hot, humid climate (Florida, USA) and temperate climate (Colorado, USA) for 10 years. We employ a comprehensive set of high-resolution electron microscopy imaging and spectroscopy to directly resolve structure and composition in these cells down to the nanoscale. We show features such as alignment of the In2O3 transparent conducting oxide and a-Si:H layers on the textured c-Si facets, interfacial oxidation at the a-Si:H/c-Si and In2O3/a-Si:H interfaces, and twinned c-Si resulting from epitaxial growth into the a-Si:H layer. Our results raise potential degradation mechanisms in these outdoor-weathered modules, but the root cause of electrical loss remains uncertain due to the very small changes in aged samples. This study shows that many atomic scale features at the In2O3/a-Si:H/c-Si interfaces are surprisingly robust, and the electrical losses with aging may either be attributed to other pathways or be very sensitive to the subtle chemical and microstructural features observed here.

14 SOLAR ENERGY↗
DOE OSTI2024

Passivation Mechanisms in Locally Etched P-Type Poly-Si on Silicon Nitride/Silicon Oxide Stack

Tunneling oxide passivated contacts are quickly becoming the industry standard for high-efficiency c-Si based photovoltaic cells. Further development of these structures is essential to enable higher efficiencies and better reliability of cells. By utilizing poly-Si/SixNy/SiOx stacks, very high efficiencies have been demonstrated on small area cells. In this work we investigate the cause of the excellent passivation seen by these structures and show that the primary reason of the excellent passivation seen is the blocking B diffusion to the SiOx/c -Si interface. We also show that the interface between the silicon nitride and polysilicon affects B diffusion through to the c-Si interface. Finally, we demonstrate that the composition of the nitride used is of great importance, and that an incorrect nitride composition leads to B diffusion, and is directly correlated to poor passivation performance.

industries↗
DOE OSTI2025

Enhancing lifetime, forecasting, and economic benefits of photovoltaic technologies undergoing UV-induced degradation with optical filtering

Ultraviolet-induced degradation (UV-ID) of various PV cell types was analyzed under optical UV filters with different cutoff wavelengths. Cell types studied included interdigitated back contact (IBC), passivated emitter and rear totally diffused (PERT), and heterojunction technology (HJT) based on crystalline Si (c-Si), and metal halide perovskite (MHP) cells. Analyzing degradation rates in two distinct regimes proved beneficial for all cell types. We used empirical linearizing functions ln(t) for c-Si technologies and 2 √t for MHP samples where t is time. These were applied to extrapolate UV-induced degradation over the lifetime of PV modules under various levels of optical UV filtering and used to predict the relative economic benefits for PV power plants. Degradation rates for all technologies were generally faster under the long pass optical filters having shorter cutoff wavelengths transmitting more UV irradiation and at elevated temperatures when testing MHP samples in the range between 60 °C and 90 °C.

14 SOLAR ENERGY↗
NASA NTRS1985

Hot-spot durability testing of amorphous cells and modules

This paper discusses the results of a study to determine the hot-spot susceptibility of amorphous-silicon (a-Si) cells and modules, and to provide guidelines for reducing that susceptibility. Amorphous-Si cells are shown to have hot-spot susceptibility levels similar to crystalline-silicon (C-Si) cells. This premise leads to the fact that the same general guidelines must apply to protecting a-Si cells from hot-spot stressing that apply to C-Si cells. Recommendations are made on ways of reducing a-Si module hot-spot susceptibility including the traditional method of using bypass diodes and a new method unique to thin-film cells, limiting the string current by limiting cell area.

Gonzalez, Charles↗
NASA NTRS1985

Electrochemical degradation of amorphous-silicon photovoltaic modules

Techniques of module electrochemical corrosion research, developed during reliability studies of crystalline-silicon modules (C-Si), have been applied to this new investigation into amorphous-silicon (a-Si) module reliability. Amorphous-Si cells, encapsulated in the polymers polyvinyl butyral (PVB) and ethylene vinyl acetate (EVA), were exposed for more than 1200 hours in a controlled 85 C/85 percent RH environment, with a constant 500 volts applied between the cells and an aluminum frame. Plotting power output reduction versus charge transferred reveals that about 50 percent a-Si cell failures can be expected with the passage of 0.1 to 1.0 Coulomb/cm of cell-frame edge length; this threshold is somewhat less than that determined for C-Si modules.

Mon, G. R.↗
DOE OSTI2024

Ultraviolet Laser Activation of Phosphorus-Doped Polysilicon Layers for Crystalline Silicon Solar Cells

In crystalline silicon photovoltaics (c-Si PV), a pulsed laser can be used as a substitute for a high-temperature furnace dopant diffusion/activation step. In contrast to furnace-based activation, lasers can be used to achieve highly localized doping with controlled dopant concentrations, useful in advanced architectures such as the interdigitated back contact (IBC) solar cell. In this study, a pulsed ultraviolet (UV) laser is utilized for phosphorus dopant activation within a low-pressure chemical vapor deposited (LPCVD) polycrystalline silicon (poly-Si) passivated contact layer. The highest implied open-circuit voltage iV oc values achieved using this approach reach 726 mV. However, this comes at the expense of high specific contact resistivities ρ c , which is attributed to a lower dopant concentration across the poly-Si(n + )/SiO x /c-Si interface. Regardless, the optimum iV oc , ρ c combination is measured at a laser fluence of 0.78 J cm -2 producing values of 712 mV and 89 mΩ-cm 2 , respectively. These values are still compatible with high-efficiency solar cell designs, underscoring the feasibility and effectiveness of this approach.

14 SOLAR ENERGY↗
DOE OSTI2025

In‐Scribe Silane Bonding for Mechanical Reinforcement of Perovskite Photovoltaic Modules

Despite the extraordinary rise in power conversion efficiency over the last decade, metal halide perovskite (MHP) photovoltaics remain more mechanically fragile than other PV technologies. In this work, the scribe area, created by the monolithic interconnection of thin-film solar cells, is used to extrinsically reinforce the mechanical robustness of packaged MHP solar modules. In contrast to the epoxy-based chemistries often leveraged in the MHP literature, silane-grafted polyolefin encapsulants are designed to form strong covalent bonds to oxide surfaces, specifically to glass and the transparent conductive oxide at the base of the scribe line. Pseudo-modules encapsulated with silane-grafted polyolefin are measured with more than an order-of-magnitude enhancement infracture energy from 0.27 ± 0.01 J·m −2 (no scribes) to 5.97 ± 0.42 J·m −2 (scribes perpendicular to delamination directioncovering ≈2.2% of the module area). The silane-grafted polyolefin retains strong adhesion even after undergoing an accelerated IEC 61215 thermal cycling test consisting of 250 cycles. We find that the in-scribe bonding allows perovskite modules to have adhesion strength comparable to commercial c-Si and CdTe technologies with only 5% reduction in the active module area. This manufacturing-compatible approach offers a practical solution to address the mechanical integrity challenges in MHP solar modules, regardless of cell architecture.

14 SOLAR ENERGY↗
DOE OSTI2025

Microwave Annealing for Fast and Effective Hydrogen Activation in Polycrystalline Silicon Passivating Contacts

Hydrogenation is a crucial step in the fabrication of high-efficiency silicon solar cells. In this study, the effectiveness of hydrogen activation is demonstrated via microwave annealing of hydrogen-rich dielectrics coated on poly-Si passivating contacts. This method is compared with conventional hydrogenation techniques, such as annealing in N2 in the presence of a hydrogen-rich source (such as hydrogenated aluminum oxide (AlOx:H), hydrogenated silicon nitride (SiNy:H), or a AlOx:H/SiNy:H stack). Key improvements observed include a reduction in J0 from 30 to <5 fA cm-2, an increase in iVoc from 690 to >730 mV, and an enhancement in effective lifetime (teff) from 0.6 to ~3.5 milliseconds on phosphorus-doped poly-Si/SiO2 passivating contact samples. With a very short annealing time of ~1-2 min, the samples passivated by AlOx:H, SiNy:H, or the stack show similar performance to samples subjected to 30 min of nitrogen annealing. Photoluminescence (PL) spectra corroborate the findings regarding the hydrogenation of the poly-Si layer and the c-Si substrate, with an increase in PL intensity after microwave annealing. Ultimately, this work suggests that microwave annealing could be a promising addition, offering flexibility to traditional firing hydrogenation processes.

hydrogenation↗
DOE OSTI2026

Optical Durability of Contemporary PV Encapsulants Through Artificial UV Weathering

Modern c-Si photovoltaic (PV) cells provide high performance but can be vulnerable to ultraviolet light induced degradation (UV-ID). Encapsulants, if chosen correctly, can mitigate UV-ID of the PV cell. Here, we explore performance and durability of 14 commercial encapsulant materials before, during, and after irradiation with UV-containing light. Materials include contemporary, polymer-based encapsulants with a base polymer of poly (ethylene co-vinyl acetate) (EVA), polyethylene-..alpha..-olefin (POE), or their composite (EPE). Polymers contain additives that induce UV-blocking, UV-transmitting, or UV-downshifting properties. We use test coupons to study degradation in a chamber held at 65 degrees C under a xenon light source for up to 4000 h of exposure, corresponding to a cumulative dose of 11.5 MJ/m2 at 340 nm. We examine optical properties including spectral transmittance, yellowness index and spectral fluorescence, considering changes to both the encapsulant and glass as a function of weathering time. Degradation modes identified include discoloration, changes to UV cutoff wavelength, changes to solar-weighted transmittance, and most notably a change to the UV-managing properties of some additives. We propose the use of solar-weighted transmittance in the 300- to 400-nm range to better track performance changes in the UV region associated with the UV-related additive. This is especially relevant for the emerging class of UV-downshifting additives, as metrics like UV-cutoff can understate the degree of degradation or change in these materials. While most encapsulants show very little change after weathering, some show significant changes that directly impact how much UV light would reach an underlying cell.

14 SOLAR ENERGY↗
DOE OSTI2025

Alkaline Earth-Based Ternary Chalcogenide Nanocrystals: Cadmium- and Lead-Free Optical Materials

As some of the most abundant elements on the Earth’s crust, alkaline earths bear great potential in Cd- and Pb-free catalytic, energy conversion, and light-emitting devices. Further, because large electropositive alkaline earths (Ae) can adopt high coordination numbers, they offer structural complexity beyond the tetrahedral (c-Si, II–VI, III–V) or octahedral (IV–VI) atomic sites that─with the notable exception of halide perovskites─are ubiquitous among nanocrystalline semiconductors. Here, in this work, we present a general route to photoluminescent 6–125 nm nanocrystals of ternary AeIn 2 Ch 4 semiconductors (Ae = Sr, Ba; Ch = S, Se) featuring eight- (Ae) as well as four-coordinate (In and Ch) atomic sites. Powder X-ray diffraction, electron microscopy, optical absorption, photoluminescence, and solid-state (ss)NMR spectroscopies attest to the ternary composition and phase purity of the nanocrystals. Continuous shape measures pinpoint the degree of distortion of individual crystallographic sites from ideal coordination polyhedra, allowing us to identify two very distinct types of Se coordination environments. Based on their higher order, pseudo-3-fold rotational symmetry, we assign 77 Se ssNMR peaks with negligible chemical shift anisotropy (CSA) to pyramidalized Se sites with vacant-trigonal bipyramid-like geometries and those with larger CSA to lower symmetry Se sites with seesaw-distorted geometries. Calculations help to better understand the electronic band structure of these materials. The nanocrystals are stable at room temperature in open air for several weeks, and some compositions up to 1000 °C under Ar, making them strong candidates for practical applications.

alkaline earth↗
DOE OSTI2025

Characterization of dangling bond defects at the crystalline Si/SiO x interface in a polycrystalline Si passivating contact solar cell at room temperature with electrically detected magnetic resonance spectroscopy

Monocrystalline silicon solar cells can achieve photoconversion efficiencies exceeding 26%; however, performance-limiting defects that trap carriers continue to be a challenge. In this work, we have characterized Si solar cells with tunneling SiO x /polycrystalline-Si (poly-Si) passivating contacts (TOPCon) on As-doped Czochralski Si wafers with electrically detected magnetic resonance (EDMR) spectroscopy. We fabricated 2 × 20 mm 2 TOPCon-like mini solar cells with edge passivation alongside larger 4 cm 2 sister cells and obtained similar device characteristics. We performed EDMR spectroscopy at 300 K on two minicells with different degrees of surface passivation based on the recombination parameter, J o , values of 40 and 310 fA/cm2. We optimized the resolution and the signal-to-noise ratio of the EDMR response of the minicells by varying the forward bias voltage and the magnetic field modulation amplitude. We detect two distinct signals with EDMR spectroscopy, an axial-like signal at g = 2.009, 2.0087, and 2.0015, and an isotropic signal at g = 2.0024, which we attribute to Si dangling bonds (P b0 and P b centers) and boron–oxygen related defects, respectively, at or near the c-Si/SiO x interface. The EDMR signals were lower for the cell with a lower value of J o , while the ratio of the two defect populations was very similar. The EDMR signal increases with forward bias but drops to zero at bias voltages >0.5 V, consistent with interface defects within or near the boron-doped emitter depletion region. Our study demonstrates a method to fabricate minicells that can be characterized with EDMR spectroscopy to detect industrially relevant defects in TOPCon cells.

14 SOLAR ENERGY↗
DOE OSTI2024

Exploring the Performance and Reliability of Screen-Printable Fire-Through Copper Paste on PERC Solar Cells

In this work, we present the performance and reliability of a fire-through copper (Cu) paste which has been screen printed on c-Si solar cell with passivated emitter rear contact (PERC). The Cu paste is fired through silicon nitride (SiN) anti-reflection coating at a peak temperature of 630 degrees C . SEM images of the Cu paste show a Cu core with ~200 nm oxide shell around the particles. This conductive oxide layer acts as a diffusion barrier between Cu and Si and prevents the degradation of cell performance during accelerated aging conditions. An efficiency of 19.250% has been achieved with Voc=654mV,FF= 76.68%, Jsc=38.40 m.A/cm 2 for champion PERC cells. Accelerated testing of the PERC mini-modules in damp heat chamber with 85 degrees C and 85% humidity have demonstrated that the devices are operational even after 1,500 hours. Devices with screen printed Ag contacts on the front side have been studied in parallel to the Cu contacts for comparison.

copper↗
DOE OSTI2025

Poly-Si Passivating Contacts Hydrogenation by Microwave Annealing

Hydrogenation is a crucial step in the fabrication of high-efficiency silicon solar cells. In this study, we demonstrate the for the first time effectiveness of hydrogen activation via microwave annealing of hydrogen-rich dielectrics coated on poly-Si passivating contacts. This method is compared with conventional hydrogenation techniques, such as annealing in N2 in the presence of a hydrogen-rich source (such as hydrogenated aluminum oxide (AlOx:H), hydrogenated silicon nitride (SiNy:H), or a AlOx:H/SiNy:H stack). Key improvements observed include a reduction in J0 from 30 to <5 fA/cm2, an increase in iVoc from 690 to >730 mV, and an enhancement in effective lifetime (teff) from 0.6 to ~3.5 milliseconds on phosphorus-doped poly-Si/SiO2 passivating contact samples. With a very short annealing time of ~1-2 minutes, the samples passivated by AlOx:H, SiNy:H, or the stack show similar performance to samples subjected to 30 minutes of nitrogen annealing. Photoluminescence (PL) spectra corroborate our findings regarding the hydrogenation of the poly-Si layer and the c-Si substrate, with an increase in PL intensity after microwave annealing. Ultimately, our work suggests that microwave annealing could be a promising addition, offering flexibility to traditional firing hydrogenation processes.

14 SOLAR ENERGY↗
NASA NTRS1984

Microcrystalline silicon growth for heterojunction solar cells

A single source of evaporation with B mixed with highly doped Si is used instead of the coevaporation of separate Si and B sources to reduce possible carbon contamination. The results of both the heterojunction or heteroface structures, however, are similar when evaporation is used. The best Voc of the heterojunction is about 460mV and no improvement in Voc in the heteroface structure is observed. Slight Voc degradation occurred. A study of the p m-Si/p c-Si structure showed a negative Voc in many cases. The interface properties between the two materials are such that instead of repelling minority carriers from the substrate carrier, collection actually occurred. Another study of cells made in the part of substrates not covered by n-Si results in performance lower than the controls. This indicates possible substrate degradation in the process.

Iles, P. A.↗