Core structure of Dissociated Dislocations in Bi2Te3 Nanowires .
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Medlin, Douglas L.↗
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n-Type doping of a solution processed p-type semiconductor using isoelectronic surface dopants for homojunction fabrication
The p-n junction is one of the fundamental requirements for a practical semiconductor-based electronic device. Designing a heterojunction comprising of dissimilar p-type and n-type semiconductors calls for careful energy level considerations, both when selecting the semiconductor materials as well as the metal contacts. A homojunction based on a single semiconductor simplifies this task, as energy levels of the p-type and n-type materials are already fairly similar, allowing for easier selection of contacts. Traditionally, homojunctions rely on doping of a bulk semiconductor to achieve p- and n-type transport through controlled addition of aliovalent dopants via energy-intensive processes such as ion implantation or thermal annealing. Exact control of doping in nanocrystalline semiconductors is significantly more challenging, due to self-purification effects. However, owing to their large surface areas, surface moieties can be utilized to both dope the nanostructures as well as tune their energy levels. Here, we present a facile technique based on an isoelectronic surface dopant in order to achieve p- and n-type materials based on the same semiconductor. We show that thin p-type colloidal Bi 2 Te 3 nanowires can be switched to n-type through surface functionalization, thus increasing the availability of new nanocrystalline solution-processable p-n homojunctions.
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