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Materials Data on Bi2Te by Materials Project

Bi2Te crystallizes in the tetragonal I-42d space group. The structure is three-dimensional. Bi1+ is bonded in a bent 150 degrees geometry to two equivalent Te2- atoms. Both Bi–Te bond lengths are 3.17 Å. Te2- is bonded in a 4-coordinate geometry to four equivalent Bi1+ atoms.

36 MATERIALS SCIENCE↗

Buffer-layer-controlled nickeline vs zinc-blende/wurtzite-type MnTe growths on c -plane Al 2 O 3 substrates

In the recent past, MnTe has proven to be a crucial component of the intrinsic magnetic topological insulator (IMTI) family [MnTe] m [Bi2Te 3 ] n , which hosts a wide range of magneto-topological properties depending on the choice of m and n. However, bulk crystal growth allows only a few combinations of m and n for these IMTIs due to the strict limitations of the thermodynamic growth conditions. One way to overcome this challenge is to utilize atomic layer-by-layer molecular beam epitaxy (MBE) technique, which allows arbitrary sequences of [MnTe]m and [Bi 2 Te 3 ] n to be formed beyond the thermodynamic limit. For such MBE growth, finding optimal growth templates and conditions for the parent building block, MnTe, is a key requirement. Here, we report that two different hexagonal phases of MnTe - nickeline (NC) and zinc-blende/wurtzite (ZB-WZ) structures, with distinct in-plane lattice constants of 4.20 ± 0.04 Å and 4.39 ± 0.04 Å, respectively - can be selectively grown on c-plane Al 2 O 3 substrates using different buffer layers and growth temperatures. Moreover, we provide the first comparative studies of different MnTe phases using atomic-resolution scanning transmission electron microscopy and show that ZB and WZ-like stacking sequences can easily alternate between the two. Surprisingly, In 2 Se 3 buffer layer, despite its lattice constant (4.02 Å) being closer to that of the NC phase, fosters the ZB-WZ instead, whereas Bi 2 Te 3 , sharing the same lattice constant (4.39 Å) with the ZB-WZ phase, fosters the NC phase. Furthermore, these discoveries suggest that lattice matching is not always the most critical factor determining the preferred phase during epitaxial growth. Overall, this will deepen our understanding of epitaxial growth modes for chalcogenide materials and accelerate progress toward new IMTI phases as well as other magneto-topological applications.

36 MATERIALS SCIENCE↗

Materials Data on Bi2TeIClO8 by Materials Project

Bi2Te(IO3)O5Cl crystallizes in the monoclinic Cc space group. The structure is three-dimensional. there are four inequivalent Bi3+ sites. In the first Bi3+ site, Bi3+ is bonded in a 6-coordinate geometry to six O2- and one Cl1- atom. There are a spread of Bi–O bond distances ranging from 2.28–2.54 Å. The Bi–Cl bond length is 3.09 Å. In the second Bi3+ site, Bi3+ is bonded in a 7-coordinate geometry to six O2- and one Cl1- atom. There are a spread of Bi–O bond distances ranging from 2.29–2.66 Å. The Bi–Cl bond length is 2.89 Å. In the third Bi3+ site, Bi3+ is bonded in a 7-coordinate geometry to six O2- and two equivalent Cl1- atoms. There are a spread of Bi–O bond distances ranging from 2.28–2.83 Å. There are one shorter (2.80 Å) and one longer (3.39 Å) Bi–Cl bond lengths. In the fourth Bi3+ site, Bi3+ is bonded in a 7-coordinate geometry to seven O2- and one Cl1- atom. There are a spread of Bi–O bond distances ranging from 2.25–2.76 Å. The Bi–Cl bond length is 3.21 Å. There are two inequivalent Te6+ sites. In the first Te6+ site, Te6+ is bonded to six O2- atoms to form edge-sharing TeO6 octahedra. There are a spread of Te–O bond distances ranging from 1.92–2.03 Å. In the second Te6+ site, Te6+ is bonded to six O2- atoms to form edge-sharing TeO6 octahedra. There are a spread of Te–O bond distances ranging from 1.92–2.04 Å. There are sixteen inequivalent O2- sites. In the first O2- site, O2- is bonded in a 2-coordinate geometry to two Bi3+ and one Te6+ atom. In the second O2- site, O2- is bonded in a 3-coordinate geometry to two Bi3+ and one Te6+ atom. In the third O2- site, O2- is bonded in a 3-coordinate geometry to two Bi3+ and one Te6+ atom. In the fourth O2- site, O2- is bonded in a 3-coordinate geometry to two Bi3+ and one Te6+ atom. In the fifth O2- site, O2- is bonded in a 3-coordinate geometry to two Bi3+ and one Te6+ atom. In the sixth O2- site, O2- is bonded in a 3-coordinate geometry to two Bi3+ and one Te6+ atom. In the seventh O2- site, O2- is bonded in a 3-coordinate geometry to two Bi3+ and one Te6+ atom. In the eighth O2- site, O2- is bonded in a 3-coordinate geometry to two Bi3+ and one Te6+ atom. In the ninth O2- site, O2- is bonded in a 2-coordinate geometry to one Bi3+ and two Te6+ atoms. In the tenth O2- site, O2- is bonded in a distorted water-like geometry to one Bi3+ and two Te6+ atoms. In the eleventh O2- site, O2- is bonded in a bent 150 degrees geometry to one Bi3+ and one I5+ atom. The O–I bond length is 1.84 Å. In the twelfth O2- site, O2- is bonded in a bent 120 degrees geometry to one Bi3+ and one I5+ atom. The O–I bond length is 1.87 Å. In the thirteenth O2- site, O2- is bonded in a 1-coordinate geometry to one Bi3+ and two I5+ atoms. There are one shorter (1.84 Å) and one longer (2.62 Å) O–I bond lengths. In the fourteenth O2- site, O2- is bonded in a distorted single-bond geometry to two Bi3+ and one I5+ atom. The O–I bond length is 1.84 Å. In the fifteenth O2- site, O2- is bonded in a distorted bent 120 degrees geometry to one Bi3+ and one I5+ atom. The O–I bond length is 1.84 Å. In the sixteenth O2- site, O2- is bonded in a distorted bent 120 degrees geometry to one Bi3+ and one I5+ atom. The O–I bond length is 1.82 Å. There are two inequivalent I5+ sites. In the first I5+ site, I5+ is bonded in a 3-coordinate geometry to three O2- and one Cl1- atom. The I–Cl bond length is 3.01 Å. In the second I5+ site, I5+ is bonded in a 3-coordinate geometry to four O2- atoms. There are two inequivalent Cl1- sites. In the first Cl1- site, Cl1- is bonded in a distorted single-bond geometry to three Bi3+ atoms. In the second Cl1- site, Cl1- is bonded in a 1-coordinate geometry to two Bi3+ and one I5+ atom.

36 MATERIALS SCIENCE↗