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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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High density circuit technology, part 3

Dry processing - both etching and deposition - and present/future trends in semiconductor technology are discussed. In addition to a description of the basic apparatus, terminology, advantages, glow discharge phenomena, gas-surface chemistries, and key operational parameters for both dry etching and plasma deposition processes, a comprehensive survey of dry processing equipment (via vendor listing) is also included. The following topics are also discussed: fine-line photolithography, low-temperature processing, packaging for dense VLSI die, the role of integrated optics, and VLSI and technology innovations.

Wade, T. E.↗

Advanced electric propulsion and space plasma contactor research

A series of experiments performed on an 8 cm dia. ring cusp magnetic field ion thruster are described. The results show the effects of anode and cathode position and size, ring cusp axial location and discharge chamber length on plasma ion energy cost and extracted ion fraction. Thruster performance is shown to be improved substantially when optimum values of these parameters are used. Investigations into the basic plasma phenomena associated with the process of plasma contacting are described. The results show the process of electron collection from a background plasma to a hollow cathode plasma contactor exhibits a higher impedance than the process of electron emission from the hollow cathode. The importance of having cold ions present to facilitate the plasma contacting process is shown. Results of experiments into the behavior of hollow cathodes operating at high interelectrode pressures (up to approx. 100 Torr) on nitrogen and ammonia are presented. They suggest that diffuse emission from the insert of a hollow cathode can be sustained at high interelectrode pressures if the cathode is made of non-conducting material and the cathode internal pressure is reduced by evacuating the cathode interior. A theoretical model of discharge chamber operation developed for inert gas thrusters is extended so it can be used to evaluste the performance of mercury ion thrusters. Predictions of the model are compared to experimental results obtained on two 30 cm dia. thrusters.

Wilbur, P. J.↗

Research Activities at Plasma Research Laboratory at NASA Ames Research Center

In order to meet NASA's requirements for the rapid development and validation of future generation electronic devices as well as associated materials and processes, enabling technologies are being developed at NASA-Ames Research Center using a multi-discipline approach. The first step is to understand the basic physics of the chemical reactions in the area of plasma reactors and processes. Low pressure glow discharges are indispensable in the fabrication of microelectronic circuits. These plasmas are used to deposit materials and also etch fine features in device fabrication. However, many plasma-based processes suffer from stability and reliability problems leading to a compromise in performance and a potentially increased cost for the semiconductor manufacturing industry. Although a great deal of laboratory-scale research has been performed on many of these processing plasmas, little is known about the gas-phase and surface chemical reactions that are critical in many etch and deposition processes, and how these reactions are influenced by the variation in operating conditions. Such a lack of understanding has hindered the development of process models that can aid in the scaling and improvement of plasma etch and deposition systems. Our present research involves the study of such plasmas. An inductively-coupled plasma (ICP) source in place of the standard upper electrode assembly of the Gaseous Electronics Conference (GEC) radio-frequency (RF) Reference Cell is used to investigate the discharge characteristics. This ICP source generates plasmas with higher electron densities and lower operating pressures than obtainable with the original parallel-plate version of the GEC Cell. This expanded operating regime is more relevant to new generations of industrial plasma systems being used by the microelectronics industry. The research goal is to develop an understanding of the physical phenomena involved in plasma processing and to measure much needed fundamental parameters, such as gas phase and surface reaction rates, species concentration, temperature, ion energy distribution, and electron number density.

Sharma, S. P.↗