Benchmark Analysis for the Optical Dilatometry Method Using Silicon Carbide Temperature Monitors
The main objective of this project was to conduct a benchmark analysis for the optical dilatometry method by using NSUF’s SiC temperature monitors: two (2) SiC temperature monitors provided by NSUF’s BSU-8242 experiment and two (2) SiC temperature monitors provided by NSUF’s GE-Hitachi experiment. Per the BSU-8242 experiment, KGT-3597 and KGT-3591 had a design temperature of 400°C and an exposure of 3 dpa. Per the GE-Hitachi experiment, KGT-3341 and KGT-3336 had a design temperature of 290°C +/- 50°C and an exposure of 0.5–1 dpa. The KGT-3336 SiC monitor was split into two pieces during the decontamination process, making the dilatometry method the only way to analyze both those pieces. The BSU-8242 monitors revealed peak irradiation temperatures under the design temperature, and the GE-Hitachi monitors revealed peak irradiation temperatures within the design temperature range. The optical dilatometry method measured the peak irradiation temperature of BSU-8242 KGT-3597 to be 330°C, while the resistivity method measured the peak irradiation temperature of BSU-8242 KGT-3591 to be 320°C +/- 20°C. The optical dilatometry method measured the peak irradiation temperatures of the pieces of GE-Hitachi KGT-3336 to be 260°C (for the larger piece) and 220°C (for the smaller piece), while the resistivity method measured the peak irradiation temperature of GE-Hitachi KGT-3341 to be 300°C, with an accuracy range of -50°C to +20°C. Both methods of SiC temperature monitor analysis produced very similar peak irradiation temperatures for each pair of SiC passive monitors from the two experiments, BSU-8242 and GE-Hitachi. The results show dilatometry method to be a reliable and less time-intensive process for determining irradiation temperatures from passive SiC thermometry.