Some analytic properties of finite-band models in solids.
Analytic properties of finite-band models in solids as generalization of Kohn procedure
BLOCH BAND↗
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Partial sum rules for transition and noble metals.
Partial sum rules for transition and noble metals having resonant D state
BLOCH BAND↗
Modeling of Optoelectronic Devices
Ultrafast modulation of semiconductor quantum well (QW) laser is of technological importance for information technology. Improvement by order(s) of magnitude in data transfer rate is possible as terahertz (THz) radiation is available for heating the laser at picosecond time scale. Optical gain modulation in the QW is achieved via temperature modulation of electron-hole plasma (EHP). Applications include free-space THz communication, optical switching, and pulse generation. The EHP in the semiconductor QW is described with a two-band model. Semiconductor Bloch equations with many-body effects are used to derive a hydrodynamical model for the active QW region. Because of ultrafast carrier-carrier scatterings in the order of 50 fs, EHP follows quasiequilibrium Fermi-Dirac distributions and THz field interacts incoherently with it. Carrier-longitudinal optical (LO) phonon scatterings and coherent laser-EHP interaction are treated microscopically in our physical model. A set of hydrodynamical equations for plasma density, temperature, and laser envelop amplitude are derived and Runge-Kutta method is adopted for numerical simulation. A typical 8 nm GaAs/Al(0.3)Ga(0.7) As single QW at 300 K is used. Additional information is contained in the original extended abstract.
Li, Jian-Zhong↗
Photoemission from CsI - Calculation.
Calculations of optical and photoemission spectra for CsI based on first-order allowed transitions between Bloch-wave states are discussed. The calculations, utilizing energy-band data for CsI published by Onodera (1968), were performed by computer sampling of regions in the Brillouin zone. The photoelectric spectra of CsI, calculated on the basis of an interpolated band scheme, display features which are in general agreement with the experimentally determined photoelectric energy distribution curves.
Distefano, T. H.↗
A combined representation method for use in band structure calculations. 1: Method
A representation was described whose basis levels combine the important physical aspects of a finite set of plane waves with those of a set of Bloch tight-binding levels. The chosen combination has a particularly simple dependence on the wave vector within the Brillouin Zone, and its use in reducing the standard one-electron band structure problem to the usual secular equation has the advantage that the lattice sums involved in the calculation of the matrix elements are actually independent of the wave vector. For systems with complicated crystal structures, for which the Korringa-Kohn-Rostoker (KKR), Augmented-Plane Wave (APW) and Orthogonalized-Plane Wave (OPW) methods are difficult to apply, the present method leads to results with satisfactory accuracy and convergence.
Friedli, C.↗
Dyakonov-Perel Effect on Spin Dephasing in n-Type GaAs
A paper presents a study of the contribution of the Dyakonov-Perel (DP) effect to spin dephasing in electron-donor-doped bulk GaAs in the presence of an applied steady, moderate magnetic field perpendicular to the growth axis of the GaAs crystal. (The DP effect is an electron-wave-vector-dependent spin-state splitting of the conduction band, caused by a spin/orbit interaction in a crystal without an inversion center.) The applicable Bloch equations of kinetics were constructed to include terms accounting for longitudinal optical and acoustic phonon scattering as well as impurity scattering. The contributions of the aforementioned scattering mechanisms to spin-dephasing time in the presence of DP effect were examined by solving the equations numerically. Spin-dephasing time was obtained from the temporal evolution of the incoherently summed spin coherence. Effects of temperature, impurity level, magnetic field, and electron density on spin-dephasing time were investigated. Spin-dephasing time was found to increase with increasing magnetic field. Contrary to predictions of previous simplified treatments of the DP effect, spin-dephasing time was found to increase with temperature in the presence of impurity scattering. These results were found to agree qualitatively with results of recent experiments.
Ning, C. Z.↗
Ultrasoft X-ray Background Observations of the Local Interstellar Medium
Preliminary results from a May 8, 1984 sounding rocket survey of the soft X-ray background are presented. The X-ray detectors are sensitive to X-rays in three soft X-ray bandpasses: 80 to 110 eV, 90 to 188 eV, and 284 to 532 eV (at 20% of peak response). The lowest energy X-rays in this range have a mean free path of order 10 to the 19th power/sq cm and provide information about the local interstellar medium. The count rate in the 80 to 110 eV energy band (the Be band) tracks the 90 to 188 (eV band (the B band) very well, indicating that the same approx. 1 million degree gas that is responsible for the B band emission may be responsible for the bulk of the Be band X-rays as well.
Sanders, W. T.↗
Microscopic Modeling of Intersubband Optical Processes in Type II Semiconductor Quantum Wells: Linear Absorption
Linear absorption spectra arising from intersubband transitions in semiconductor quantum well heterostructures are analyzed using quantum kinetic theory by treating correlations to the first order within Hartree-Fock approximation. The resulting intersubband semiconductor Bloch equations take into account extrinsic dephasing contributions, carrier-longitudinal optical phonon interaction and carrier-interface roughness interaction which is considered with Ando s theory. As input for resonance lineshape calculation, a spurious-states-free 8-band kp Hamiltonian is used, in conjunction with the envelop function approximation, to compute self-consistently the energy subband structure of electrons in type II InAs/AlSb single quantum well structures. We demonstrate the interplay of nonparabolicity and many-body effects in the mid-infrared frequency range for such heterostructures.
Li, Jian-Zhong↗
Microscopic Modeling of Intersubband Resonances in InAs/AlSb Quantum Wells
Linear absorption spectra from intersubband resonance in InAs/AlSb quantum wells are analyzed theoretically using the intersubband semiconductor Bloch equation approach. Our model goes beyond the Hartree-Fock approximation and treats particle-particle correlations under the second Born approximation. Electron-electron and -LO phonon scatterings from such a treatment describe intrinsic line broadening to the intersubband resonance. Electron subbands are determined self-consistently with a spurious-state-free 8-band k.p Hamiltonian under the envelope function approximation. To compare with experimental measurements, we also included line broadening due to electron-interface roughness scattering. Excellent agreement was achieved for temperature-dependent absorption spectra in the mid-infrared frequency range, after taking into careful account the interplay of material parameters, nonparabolicity in bandstructure, and many-body effects.
Li, Jian-Zhong↗
Observations of the soft X-ray diffuse background at 0.1 keV
The results of a sounding rocket flight that observed the very soft X-ray diffuse background in a section of the northern Galactic hemisphere are presented. The ratio of the measured Be band count rates to the Wisconsin sky survey B band count rates is nearly constant over a 120 deg arc on the sky, strongly suggesting a common emission mechanism for both Be and B band X-rays. The mean free path is about seven times smaller for the Be band than for the B band. The present results imply that the neutral hydrogen column density between the emitting material and the earth varies by less than 2 x 10 to the 18th H I/sq cm over the observed region. It is concluded that such variations are unlikely unless the total intervening column density is less than a few times this value.
Bloch, J. J.↗
Theoretical investigation of wave-vector-dependent analytical and numerical formulations of the interband impact-ionization transition rate for electrons in bulk silicon and GaAs
The electron interband impact-ionization rate for both silicon and gallium arsenide is calculated using an ensemble Monte Carlo simulation with the expressed purpose of comparing different formulations of the interband ionization transition rate. Specifically, three different treatments of the transition rate are examined: the traditional Keldysh formula, a new k-dependent analytical formulation first derived by W. Quade, E. Scholl, and M. Rudan (1993), and a more exact, numerical method of Y. Wang and K. F. Brennan (1994). Although the completely numerical formulation contains no adjustable parameters and as such provides a very reliable result, it is highly computationally intensive. Alternatively, the Keldysh formular, although inherently simple and computationally efficient, fails to include the k dependence as well as the details of the energy band structure. The k-dependent analytical formulation of Quade and co-workers overcomes the limitations of both of these models but at the expense of some new parameterization. It is found that the k-dependent analytical method of Quade and co-workers produces very similar results to those obtained with the completely numerical model for some quantities. Specifically, both models predict that the effective threshold for impact ionization in GaAs and silicon is quite soft, that the majority of ionization events originate from the second conduction band in both materials, and that the transition rate is k dependent. Therefore, it is concluded that the k-dependent analytical model can qualitatively reproduce results similar to those obtained with the numerical model yet with far greater computational efficiency. Nevertheless, there exist some important drawbacks to the k-dependent analytical model of Quade and co-workers: These are that it does not accurately reproduce the quantum yield data for bulk silicon, it requires determination of a new parameter, related physically to the overlap intergrals of the Bloch state which can only be adjusted by comparison to experiment, and fails to account for any wave-vector dependence of the overlap integrals. As such the transition rate may be overestimated at those points for which 'near vertical,' small change in k, transitions occur.
Kolnik, Jan↗
Theoretical Investigation of Wave-Vector-Dependent Analytical and Numerical Formulations of the Interband Impact-Ionization Transition Rate for Electron in Bulk Silicon and GaAs
The electron interband impact-ionization rate for both silicon and gallium arsenide is calculated using an ensemble Monte Carlo simulation with the expressed purpose of comparing different formulations of the interband ionization transition rate. Specifically, three different treatments of the transition rate are examined: the traditional Keldysh formula, a new k-dependent analytical formulation first derived by W. Quade, E Scholl, and M. Rudan, and a more exact, numerical method of Y. Wang and K. F. Brennan. Although the completely numerical formulation contains no adjustable parameters and as such provides a very reliable result, it is highly computationally intensive. Alternatively, the Keldysh formula, although inherently simple and computationally efficient, fails to include the k dependence as well as the details of the energy band structure. The k-dependent analytical formulation of Quade and co-workers overcomes the limitations of both of these models but at the expense of some new parameterization. It is found that the k-dependent analytical method of Quade and co-workers produces very similar results to those obtained with (he completely numerical model for some quantities. Specifically, both models predict that the effective threshold for impact ionization in GaAs and silicon is quite soft, that the majority of ionization events originate from the second conduction band in both materials, and that the transition rate is k dependent. Therefore, it is concluded that the k-dependent analytical model can qualitatively reproduce results similar to those obtained with the numerical model yet with far greater computational efficiency. Nevertheless, there exist some important drawbacks to the k-dependent analytical model of Quade and co-workers: These are that it does not accurately reproduce the quantum yield data for bulk silicon, it requires determination of a new parameter, related physically to (he overlap integrals of the Bloch state which can only be adjusted by comparison to experiment, and fails to account for any wave-vector dependence of the overlap integrals. As such [he transition rate may be overestimated at those points for which "near vertical," small change in k, transitions occur.
Kolnik, Jan↗
Limits on the density of neutral gas within 100 parsecs from observations of the soft X-ray background
Observations are presented in two soft X-ray bands, the Be band (0.077-0.111 keV) and the B-prime (0.105-0.188 keV), for nine directions in the sky. The ratio of count rates in these two bands remains constant as the rates vary by a factor of three, even though the effective interstellar absorption cross sections in the bands differ by a factor of about 3.5. For a model in which the bulk of the observed soft X-ray emission originates in a uniform low-density region surrounding the sun, the constant ratio between the band rates places an upper limit on the amount of neutral material that can be homogeneously mixed with the X-ray-emitting gas. The 2 sigma upper limit on the H I column density over an average path through the local emitting region is 6.6 x 10 to the 18th/sq cm. If the average path length is about 100 pc, then clouds similar to the one in which the sun is embedded could still have a filling factor as large as 25 percent.
Juda, M.↗